1. A semiconductor storage device comprising:
a storage capacity part having a first electrode comprised of platinum, a high dielectric constant or ferroelectric film which is provided in contact with the first electrode, and a second electrode provided in contact with the high dielectric constant or ferroelectric film;
a hydrogen diffusion preventing layer provided on the storage capacity part; and
an adsorption inhibiting layer provided on the hydrogen diffusion preventing layer,
wherein a reaction preventing layer is provided between the hydrogen diffusion preventing layer and the adsorption inhibiting layer.
2. A semiconductor storage device comprising:
a storage capacity part having a first electrode comprised of platinum, a high dielectric constant or ferroelectric film which is provided in contact with the first electrode, and a second electrode provided in contact with the high dielectric constant or ferroelectric film;
a hydrogen diffusion preventing layer provided on the storage capacity part; and
an adsorption inhibiting layer provided on the hydrogen diffusion preventing layer,
wherein the adsorption inhibiting layer is a layer made of any of silver, aluminum, silicon, lead, bismuth, gold, zinc, cadmium, indium, germanium, an tin.
3. A semiconductor device comprising:
an active device;
a capacitor having a first electrode comprised of platinum, a second electrode, and a high dielectric constant or ferroelectric film provided between the first and second electrodes; and
a hydrogen diffusion preventing layer formed between the active device and the capacitor,
wherein the adsorption inhibiting layer constructs a part of the second electrode.
4. A semiconductor storage device characterized by comprising:
an active device,
an insulating film formed on the active device;
an opening formed in the insulating film;
a plug which is formed in the opening and has a hydrogen diffusion preventing layer electrically connecting to the active device; and
a storage capacity part which is formed on the hydrogen diffusion preventing layer and has a high dielectric constant or ferroelectric film and a first electrode comprised of platinum.
5. A semiconductor storage device comprising:
an active device;
an insulating film which is formed on the active device and in a part of which a hydrogen diffusion preventing layer is formed; and
a storage capacity part having a high dielectric constant or ferroelectric film formed on the insulating film and a first electrode comprised of platinum, and
wherein the hydrogen diffusion preventing layer is an oxide insulator made of a material having an oxide of aluminum or cerium as the main component.
6. A semiconductor storage device comprising:
a capacitor having a first electrode comprised of platinum, a high dielectric constant or ferroelectric film which is provided in contact with the first electrode, and a second electrode provided in contact with the high dielectric constant or ferroelectric film;
a hydrogen diffusion preventing layer provided on the capacitor part; and
a hydrogen adsorption inhibiting layer provided on the hydrogen diffusion preventing layer,
wherein the hydrogen adsorption inhibiting layer is comprised of any one of silver, aluminum, lead, bismuth, gold, zinc, cadmium, indium, germanium and tin.
7. A semiconductor storage device according to claim 1, wherein said second electrode is comprised of platinum.
8. A semiconductor storage device according to claim 2, wherein said second electrode is comprised of platinum.
9. A semiconductor storage device according to claim 3, wherein said second electrode is comprised of platinum.
10. A semiconductor storage device according to claim 4, wherein said storage capacity part further includes a second electrode comprised of platinum.
11. A semiconductor storage device according to claim 5, wherein said storage capacity part further includes a second electrode comprised of platinum.
12. A semiconductor storage device according to claim 6, wherein said second electrode is comprised of platinum.
13. A semiconductor storage device according to claim 1, characterized in that the reaction preventing layer is made of any of titanium, tungsten, tantalum, molybdenum, or any alloy or nitride of any of these materials.
14. A semiconductor storage device according to claim 1, wherein the hydrogen diffusion preventing layer or the adsorption inhibiting layer is made of a conductive oxide.
15. A semiconductor storage device according to claim 6, characterized in that a reaction preventing layer is provided between the hydrogen diffusion preventing layer and the adsorption inhibiting layer,
wherein the reaction preventing layer is comprised of any one of titanium, tungsten, tantalum, molybdenum or an alloy or nitride of any of these materials.
16. A semiconductor storage device according to claim 6, characterized in that the hydrogen diffusion preventing layer is a layer comprised of any titanium, tungsten, tantalum, molybdenum, an alloy or nitride of any of these materials, tungsten, ruthenium, iridium, palladium, osmium, ruthenium oxide, iridium oxide, palladium oxide osmium oxide, platinum oxide, and an oxide of an alloy of any of tungsten, ruthenium, iridium, palladium, and osmium.
17. A semiconductor storage device according to claim 6, characterized in that the hydrogen adsorption inhibiting layer is a part of the second electrode.
18. A semiconductor storage device according to claim 1, wherein said first electrode is a lower electrode and said second electrode is an upper electrode.
19. A semiconductor storage device according to claim 2, wherein said first electrode is a lower electrode and said second electrode is an upper electrode.
20. A semiconductor storage device according to claim 3, wherein said first electrode is a lower electrode and said second electrode is an upper electrode.
21. A semiconductor storage device according to claim 4, wherein said first electrode is a lower electrode.
22. A semiconductor storage device according to claim 5, wherein said first electrode is a lower electrode.
23. A semiconductor storage device according to claim 6, wherein said first electrode is a lower electrode and said second electrode is an upper electrode.
24. A semiconductor storage device according to claim 7, wherein said first electrode is a lower electrode and said second electrode is an upper electrode.
25. A semiconductor storage device according to claim 8, wherein said first electrode is a lower electrode and said second electrode is an upper electrode.
26. A semiconductor storage device according to claim 9, wherein said first electrode is a lower electrode and said second electrode is an upper electrode.
27. A semiconductor storage device according to claim 10, wherein said first electrode is a lower electrode and said second electrode is an upper electrode.
28. A semiconductor storage device according to claim 11, wherein said first electrode is a lower electrode and said second electrode is an upper electrode.
29. A semiconductor storage device according to claim 12, wherein said first electrode is a lower electrode and said second electrode is an upper electrode.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A valve for fluids operating under differential pressure, which receives a main inlet flow and releases a main outlet flow, comprising:
a main valve (1,4,5,7,9) having a main inlet (112,412,512,712,912) and a main outlet (113,413,513,713,913) for fluid; said main inlet being equipped with a main valve seat (114,414,514,714,914) over which a main plug (100,400,500,700,900) is seated, with said main plug being displaceable in an axial direction, perpendicular to a sealing plane;
a control inlet (111,411,511,711,911), communicating with a pressure chamber (110,410,510,710,910), which carries the flow from upstream said main flow to said pressure chamber;
a control outlet (121,421,521,721,921), communicating with said pressure chamber, for allowing total or partial release of the flow control from said pressure chamber, with said control flow being discharged at a point located downstream said main outlet flow;
a secondary control valve, to regulate the control fluid in said pressure chamber, said secondary control valve being formed by an axially driven stem (103,403,503,703,903) made up of a hollow portion and an end portion, where said stem drives the relative displacement between said main plug and said main seat, with one of the ends of said end portion being located beyond a body of said valve in order to allow said end portion to be driven from the outside;
said hollow portion is provided with two openings in their corresponding axial end, with said hollow portion being joint in one end to said main plug, with one of said two openings being located in the joint end to said main plug, being surrounded by said pressure chamber, and with another of said two openings being located outside said pressure chamber, from which said hollow portion goes out through an opening of said pressure chamber, being provided with a tight seal which allows axial displacement of said hollow portion;
said end portion is independent from and is axially aligned with said hollow portion, with one of the ends of said end portion being provided with a secondary plug portion to obstruct said another of said two openings which is located outside said pressure chamber;
an area, corresponding to said control inlet, being smaller than an area corresponding to said control outlet, so that the volume of flow through said control inlet is lower than the volume of flow through said control outlet, so that the control fluid may enter through said control inlet.
2. A valve for fluids as in claim 1, wherein said control inlet includes a duct (111,411,511,711,911) which communicates with said main inlet.
3. A valve for fluids as in claim 2, where said duct is made up of a small opening in said main plug which communicates with said pressure chamber.
4. A valve for fluids as in claim 1, where said end portion of said stem is joint to said hollow portion of said stem through a joint restricting means (724) to an upper portion of said hollow portion of said stem, so that sliding of said joint restricting means keeps said end portion of said stem within a preset range of axial displacement.
5. A valve for fluids operating under differential pressure, wherein said valve (3) comprises:
a main inlet for fluid (312) and a main outlet for fluid (313); with said main outlet for fluid being equipped with a main valve seat (314) over which a main plug (300) is seated, with said main plug being displaceable in an axial direction, perpendicular to a sealing plane;
said valve having a control inlet for fluids (311), from upstream, allowing control fluid passing to a pressure chamber (310) and having a control outlet for fluid (321) downstream, thus allowing the control fluid leaving said pressure chamber totally or partially; with the control fluid in said pressure chamber being regulated by a secondary control valve formed by an axially driven stem made up of at least a hollow portion and an end portion, where said stem drives the relative displacement between said main plug and said main seat of the valve; with one of the ends of said end portion of said stem being located beyond a body of said main valve in order to allow its driving from the outside, wherein:
said control outlet for fluid (321) is an opening located in said main plug;
said end portion of said stem is independent and is axially aligned with said opening for said control outlet of fluid located in said main plug; with one of the ends of said end portion of said stem being provided with a secondary plug for obstructing said opening of said control outlet and the other end of said end portion of said stem being located outside said pressure chamber, from which it goes out through an opening in said pressure chamber provided with a tight seal which allows the axial displacement of said end portion of said stem; and
an area corresponding to the inlet of control fluid is smaller than an area corresponding to the outlet of the control fluid, so that the volume of flow of inlet of control fluid is lower than the volume, of flow of discharge of the control fluid.
6. A valve for fluids operating under differential pressure, wherein said valve (9\u2032) comprises:
a main inlet for fluid (912\u2032) and a main outlet for fluid (913\u2032); with said main inlet for fluid being equipped with a main valve seat (914\u2032) over which a main plug (900\u2032) is seated, with said main plug being displaceable in an axial direction, perpendicular to a sealing plane;
said valve for fluids also having a control inlet for fluids from upstream, which is a small duct or opening (911\u2032) in said main plug allowing said control fluid passing to a pressure chamber (910\u2032) and having a control outlet (921\u2032) for fluid downstream, thus allowing control fluid leaving said pressure chamber totally or partially; with the control fluid in said
pressure chamber being regulated by a secondary control valve formed by an axially driven stem made up of a hollow portion and an end portion, which is jointly and axially placed as regards said hollow portion; with one of the ends of said end portion of the stem being located beyond the body of said main valve in order to allow its driving from the outside, wherein:
said hollow portion of said stem is provided with two openings in their corresponding axial end, with one of the openings of said hollow portion of said stem, which is located in the joint end to said main plug, being surrounded by said pressure chamber; and with the other of said openings at the other end of said hollow portion of said stem joint to said end portion of said stem being located outside said pressure chamber, from which it goes out through an opening of said pressure chamber, being provided with a tight seal which allows the axial displacement of said hollow portion of said stem;
said main plug has a secondary plug (905\u2032) joint to and at a fixed preset distance from a main wall of said main plug on its side facing said pressure chamber, so that said secondary plug will obstruct said opening of said hollow portion of said stem located in a farthest end of said joint to said end portion when placed in axial contact; and
an area corresponding to said inlet of control fluid is smaller than an area corresponding to said outlet of the control fluid, so that the volume of flow of inlet of control fluid is lower than the volume of flow of discharge of the control fluid.