1. A color wheel, comprising:
a fixing base, having a protrusion portion and a supporting portion;
a ring filter, fit on the protrusion portion, an inner margin of the ring filter leaning on the supporting portion;
a washer, connected to the protrusion portion, the ring filter being disposed between the washer and the supporting portion, and the washer and the supporting portion being capable of clipping the inner margin of the ring filter, wherein a top of the protrusion portion has at least two hooks, the washer has a center hole fit on the protrusion portion, the hooks are pressed on the washer, a notch is between the hooks, and the notch is suitable for accommodating the deformed hooks; and
a fixing ring, having an annular supporting portion, a side wall surrounding the annular supporting portion, and a plurality of fixing blocks connected to the side wall, the fixing blocks being dotted on an outer margin of the ring filter, the outer margin of the ring filter leaning on the annular supporting portion, and the fixing blocks, the side wall, and the annular supporting portion being capable of clipping the outer margin of the ring filter.
2. The color wheel as claimed in claim 1, wherein the ring filter is formed by a plurality of sector sub-filters, and a joint exists between two adjacent sub-filters.
3. The color wheel as claimed in claim 2, wherein the fixing blocks are dotted on the joints.
4. The color wheel as claimed in claim 2, wherein one end of each fixing block is connected to the side wall, and another end is pressed on the corresponding joint.
5. The color wheel as claimed in claim 1, wherein the annular supporting portion, the side wall, and the fixing blocks are integrally formed.
6. The color wheel as claimed in claim 5, wherein the annular supporting portion, the side wall, and the fixing blocks are formed by metal or plastic.
7. The color wheel as claimed in claim 1, wherein the fixing blocks are formed by solid adhesive, ultraviolet curing adhesive, metal, or plastic.
8. The color wheel as claimed in claim 1, wherein the washer and the fixing base are integrally formed, an accommodation space is formed between the washer, the protrusion portion, and the supporting portion, and the inner margin of the ring filter is disposed in the accommodation space.
9. The color wheel as claimed in claim 1, wherein a top surface of the protrusion portion of the fixing base is pressed by a bottom surface of the washer for forming an accommodation space between the washer, the protrusion portion, and the supporting portion, and the inner margin of the ring filter is disposed in the accommodation space.
10. The color wheel as claimed in claim 1, further comprising a buffer member disposed between the inner margin of the ring filter and the protrusion portion, or between the outer margin of the ring filter and the side wall.
11. The color wheel as claimed in claim 1, further comprising a motor, wherein the motor has a rotating disk and a rotating shaft, the supporting portion of the fixing base is a surface of the rotating disk, and the protrusion portion is the rotating shaft.
12. The color wheel as claimed in claim 1, further comprising a motor, wherein the fixing base is connected to the motor.
13. A color wheel, comprising:
a fixing base, having a protrusion portion and a supporting portion;
a ring filter, fit on the protrusion portion, an inner margin of the ring filter leaning on the supporting portion;
a washer, connected to the protrusion portion, the washer and the supporting portion being capable of clipping the inner margin of the ring filter; and
a fixing ring, having an annular groove on a inner wall of the fixing ring, an outer margin of the ring filter being located in the annular groove, and two opposite side walls of the annular groove being capable of clipping the outer margin of the ring filter, wherein the fixing ring comprises a first half-ring, a second half-ring connected to the first half-ring, and two fixing members, each of two ends of the first half-ring has a first joint portion, each of two ends of the second half-ring has a second joint portion, and each of the first joint portions is joined to one of the second joint portions with one of the fixing members, the fixing members are screws or fasteners, each of the first joint portions has a first through hole, each of the second joint portions has a second through hole, and each of the fixing members penetrates the first through hole and the second through hole of each joined first and second joint portions.
14. The color wheel as claimed in claim 13, further comprising a buffer member disposed between the outer margin of the ring filter and a bottom of the annular groove.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A semiconductor device, comprising:
a substrate formed of semiconductor material;
a source region formed in the substrate and doped with a first type of impurities;
a drain region formed in the substrate and doped with the first type of impurities, the drain region spaced apart from the source region;
a conducting region formed between the source region and the drain region and doped with the first type of impurities, the conducting region operable to conduct current between the drain region and the source region when the semiconductor device is operating in an on state;
a channel region formed in the conducting region;
a gate region formed in the substrate and doped with a second type of impurities, the gate region abutting the channel region; and
a stress layer deposited on at least a portion of the conducting region, wherein the stress layer applies a stress to the conducting region along a boundary of the conducting region that strains at least a portion of the conducting region;
the semiconductor device comprises a junction field effect transistor (JFET).
2. The semiconductor device of claim 1, wherein:
the stress layer comprises a first material having a first thermal expansion coefficient;
the conducting region comprises a second material having a second thermal expansion coefficient, and
the first thermal expansion coefficient is greater than the second thermal expansion coefficient.
3. The semiconductor device of claim 2, wherein the stress layer applies a tensile stress to the conducting region.
4. The semiconductor device of claim 1, wherein:
the stress layer comprises a first material having a first thermal expansion coefficient;
the conducting region comprises a second material having a second thermal expansion coefficient, and
the first thermal expansion coefficient is less than the second thermal expansion coefficient.
5. The semiconductor device of claim 1, wherein:
the stress layer comprises a first portion and a second portion;
the first portion of the stress layer is deposited on a first portion of the conducting region and applies a first force to the conducting region; and
the second portion of the stress layer is deposited on a second portion of the conducting region and applies a second force to the conducting region in an opposite direction to the first force.
6. The semiconductor device of claim 5, wherein the stress layer applies a compressive stress to the conducting region.
7. The semiconductor device of claim 1, wherein the stress layer comprises silicon nitride.
8. The semiconductor device of claim 1, further comprising:
a first polysilicon region in ohmic contact with the source region;
a second polysilicon region in ohmic contact with the gate region;
a third polysilicon region in ohmic contact with the drain region, and wherein the stress layer comprises a first portion deposited between the first polysilicon region and the second polysilicon region and a second portion deposited between the second polysilicon region and the third polysilicon region.
9. The semiconductor device of claim 1, further comprising a gate electrode region which overlays the semiconductor substrate, and a gate contact formed on the gate electrode region and in ohmic contact with the gate region.
10. The semiconductor device of claim 1, wherein the stress applied to the conducting region, increasing the mobility of charge carriers in at least a portion of the conducting region.
11. A method for creating a stress within a semiconductor device, comprising:
forming a source region doped with a first type of impurities in a semiconductor substrate;
forming a drain region doped with the first type of impurities in the semiconductor substrate, the drain region spaced apart from the source region;
forming a conducting region between the source region and the drain region the conducting region doped with the first type of impurities and operable to conduct current between the drain region and the source region when the semiconductor device is operating in an on state;
forming a channel region within the conducting region;
forming a gate region doped with a second type of impurities, the gate region abutting the channel region; and
depositing a stress layer on at least a portion of the conducting region that applies a stress to the conducting region along a boundary of the conducting region, wherein the stress strains at least a portion of the conducting region;
the semiconductor device comprises a junction field effect transistor (JFET).
12. The method of claim 11, wherein:
the stress layer comprises a first material having a first thermal expansion coefficient;
the conducting region comprises a second material having a second thermal expansion coefficient, and
the first thermal expansion coefficient is greater than the second thermal expansion coefficient.
13. The method of claim 12, wherein the stress layer applies a tensile stress to the conducting region.
14. The method of claim 11, wherein:
the stress layer comprises a first material having a first thermal expansion coefficient;
the conducting region comprises a second material having a second thermal expansion coefficient, and
the first thermal expansion coefficient is less than the second thermal expansion coefficient.
15. The method of claim 14, wherein the stress layer applies a compressive stress to the conducting region.
16. The method of claim 11, wherein depositing the stress layer comprises:
depositing a first portion of the stress layer on a first portion of the conducting region, wherein the first portion of the stress layer applies a first force to the conducting region; and
depositing a second portion of the stress layer on a second portion of the conducting region, wherein the second portion of the stress layer applies a second force to the conducting region in an opposite direction to the first force.
17. The method of claim 11, wherein the stress layer comprises silicon nitride.
18. The method of claim 11, further comprising:
forming a first polysilicon region in ohmic contact with the source region;
forming a second polysilicon region in ohmic contact with the gate region;
forming a third polysilicon region in ohmic contact with the drain region, and wherein depositing the stress layer comprises;
depositing a first portion of the stress layer between the first polysilicon region and the second polysilicon region; and
depositing a second portion of the stress layer between the second polysilicon region and the third polysilicon region.
19. The method of claim 11, wherein the stress applied to the conducting region, increasing the mobility of charge carriers in at least a portion of the conducting region.
20. The method of claim 11, further comprising:
forming a gate electrode region overlaying the semiconductor substrate; and
forming a gate contact on the gate electrode region and in ohmic contact with the gate region.