1. A method of forming fully-depleted and partially-depleted silicon-on-insulator (SOI) devices in an integrated circuit device, comprising:
providing a first silicon layer over a buried oxide layer, wherein the silicon layer comprises a first thickness associated with a fully-depleted SOI device, the first silicon layer having a fully-depleted region and a partially-depleted region associated therewith;
forming a dielectric portion over the first silicon layer in the fully-depleted region;
forming a second silicon layer over the first silicon layer, thereby surrounding the dielectric portion in the fully-depleted region and forming a composite silicon layer comprising the first and second silicon layers in the partially-depleted region, wherein the composite silicon layer has a second thickness associated with a partially-depleted SOI device;
forming a dielectric layer over the second silicon layer, thereby covering the composite silicon layer in the partially-depleted region and surrounding the dielectric portion in the fully-depleted region;
removing the dielectric portion in the fully-depleted region and a portion of the dielectric layer in the partially-depleted region, thereby forming a fully-depleted gate opening and exposing a portion of the first silicon layer in the fully-depleted region and forming a partially-depleted gate opening and exposing a portion of the second silicon layer in the partially-depleted region;
providing insulating material on sidewalls of the gate openings; and
forming conductive material in the gate openings, thereby forming fully-depleted and partially-depleted gate electrodes therein, respectively, wherein a distance between a bottom of the fully-depleted gate electrode and the buried oxide layer is less than a distance between a bottom of the partially-depleted gate electrode and the buried oxide layer.
2. The method of claim 1, wherein the dielectric portion comprises a nitride material and the dielectric layer comprises an oxide material.
3. The method of claim 1, wherein forming the second silicon layer comprises performing a selective epitaxial deposition, wherein silicon grows on surfaces containing silicon and does not grow substantially on surfaces that do not contain silicon, whereby the second silicon layer does not grow on a top part of the dielectric portion.
4. The method of claim 1, wherein forming the dielectric layer comprises:
depositing a dielectric material over the device; and
planarizing the dielectric material until a top portion of the dielectric portion is exposed.
5. The method of claim 1, wherein removing the portion of the dielectric layer in the partially-depleted region comprises:
forming a patterned photoresist or hardmask layer over the dielectric layer; and
etching the dielectric layer using the patterned photoresist or hardmask layer as an etch mask down to the second silicon layer to form the partially-depleted gate opening.
6. The method of claim 5, wherein the dielectric layer comprises an oxide material and the dielectric portion comprises a nitride material, wherein removing the dielectric portion comprises etching the nitride material dielectric portion with an etchant that is substantially selective with respect to the oxide material.
7. The method of claim 1, further comprising:
forming a sacrificial oxide layer in the fully-depleted gate opening, wherein the sacrificial oxide consumes a portion of the first silicon layer at the bottom of the fully-depleted gate opening; and
removing the sacrificial oxide, thereby again exposing the first silicon layer at the bottom of the fully-depleted gate opening, wherein a remaining thickness of the first silicon layer below the fully-depleted gate opening is small enough to ensure fully depletion thereat during device operation.
8. The method of claim 1, further comprising forming a gate oxide at a bottom of the gate openings.
9. The method of claim 1, wherein providing insulating material on sidewalls of the gate openings comprises:
depositing a nitride layer in a generally conformal manner over a remaining top portion of the dielectric layer and in the gate openings; and
performing a substantially anisotropic etch of the nitride layer, thereby removing portions of the nitride layer on the top of the dielectric layer and at the bottom of the gate openings and leaving nitride material on the sidewalls of the gate openings.
10. The method of claim 1, wherein forming conductive material in the gate openings comprises:
depositing a polysilicon layer over the dielectric layer and in the gate openings; and
planarizing the polysilicon layer down to the top of the dielectric layer, thereby isolating the polysilicon in the gate openings.
11. The method of claim 1, further comprising:
forming a pad oxide layer over the first silicon layer prior to forming the dielectric portion in the fully-depleted region; and
performing a pad oxide etch after forming the dielectric portion thereover, wherein a remaining portion of the pad oxide is recessed under the dielectric portion.
12. The method of claim 11, wherein upon removing the dielectric portion in the fully-depleted region, the recessed pad oxide remains at the bottom of the fully-depleted gate opening, and further comprising performing an extension region implant into the fully-depleted gate opening, thereby forming extension regions in the first silicon layer below the fully-depleted gate opening having a spacing therebetween corresponding to a width of the recessed pad oxide.
13. The method of claim 12, further comprising:
removing the recessed pad oxide after the extension region implant; and
performing a threshold voltage adjust implant into the first silicon layer at the bottom of the fully-depleted gate opening and into the second silicon layer at the bottom of the partially-depleted gate opening.
14. The method of claim 1, further comprising:
removing a portion of the dielectric layer to a level to expose the underlying second silicon layer, thereby exposing the gate electrodes vertically extending therefrom;
performing an extension region implant into the second silicon material to form extension regions for the fully-depleted and partially-depleted devices;
forming sidewall spacers along sidewalls of the gate electrodes; and
performing a sourcedrain implant into the second silicon material to form sourcedrain regions for the fully-depleted and partially-depleted devices spaced apart from the gate electrodes a distance corresponding to a width of the sidewall spacers.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method, comprising:
receiving information indicative of one or more user interactions with a client device during a period of time in which the client device received linear content comprising one or more assets;
wherein the information includes user interaction information indicating a quantity of user interactions with the client device since the occurrence of a last tune-in event, time information indicating a time of day at which the information is collected, elapsed-time information indicating an elapsed time since the occurrence of the last tune-in event, and asset information indicating a quantity of the assets and a length of each of the assets received by the client device since the occurrence of the last tune-in event;
determining, based at least in part on the information, sub-scores corresponding to each of the user interaction information, the time information, the elapsed-time information, and the asset information;
wherein the last tune-in event indicates that a user had tuned in, with the client device, to the linear content; and
determining a score indicating a likelihood that the linear content has been consumed by the user based at least in part on weighted contributions of portions of the information, wherein at least some of the weighted contributions each correspond to at least one of the sub-scores.
2. The method of claim 1, wherein said steps of receiving the information and determining the score indicating the likelihood that the linear content has been consumed are performed after an occurrence of a predefined event.
3. The method of claim 2, further comprising receiving an indication of a type of the predefined event.
4. The method of claim 1, further comprising, prior to determining the score indicating the likelihood that the linear content has been consumed, determining that the period during which the client device received the linear content is greater than a threshold time.
5. The method of claim 1, wherein the information further includes quantity information indicating a quantity of user interactions with the client device since a reference point in time and a time of a most recent user interaction with the client device, and the method further comprises determining a sub-score corresponding to the quantity information.
6. The method of claim 1, further comprising, prior to determining the score indicating the likelihood that the linear content has been consumed, determining that an event that occurred prior to receiving the information indicative of the tune-in event is of a type in response to which the likelihood of consumption is to be determined.
7. The method of claim 1, wherein the information is received directly from the client device.
8. A non-transitory computer-readable storage medium storing program instructions, wherein the program instructions are computer-executable to cause a computing apparatus to perform steps comprising:
receiving information indicative of one or more user interactions with a client device, during a period in which the client device received linear content comprising one or more assets;
wherein the information include user interaction information indicating a quantity of user interactions with the client device since the occurrence of a last tune-in event, time information indicating a time of day at which the information is collected, elapsed-time information indicating an elapsed time since the occurrence of the last tune-in event, and asset information indicating a quantity of the assets and a length of each of the assets received by the client device since the occurrence of the last tune-in event;
determining, based at least in part on the information, sub-scores corresponding to each of the user interaction information, the time information, the elapsed-time information, and the asset information;
wherein the last tune-in event indicates that a user had tuned in, with the client device, to the linear content; and
determining a score indicating a likelihood that the linear content has been consumed by the user based at least in part on weighted contributions of portions of information, wherein at least some of the weighted contributions each correspond to at least one of the sub-scores.
9. The non-transitory computer-readable storage medium of claim 8, wherein said steps of receiving information and determining the score indicating the likelihood that the linear content has been consumed are performed after an occurrence of a predefined type of event.
10. The non-transitory computer-readable storage medium of claim 9, wherein the program instructions further cause the computing apparatus to perform steps comprising receiving an indication of a type of the predefined event.
11. The non-transitory computer-readable storage medium of claim 8, wherein the program instructions further cause the computing apparatus to perform steps comprising, prior to determining the score indicating the likelihood that the linear content has been consumed, determining that the period during which the client device received the linear content is greater than a threshold time.
12. The non-transitory computer-readable storage medium of claim 8, wherein the information further includes quantity information indicating a quantity of user interactions with the client device since a reference point in time and a time of a most recent user interaction with the client device, and the program instructions further cause the computing apparatus to perform steps comprising determining a sub-score corresponding to the quantity information.
13. The non-transitory computer-readable storage medium of claim 8, wherein the program instructions further cause the computing apparatus to perform steps comprising, prior to determining the score indicating the likelihood that the linear content has been consumed, determining that an event that occurred prior to receiving the information indicative of the tune-in event is of a type in response to which the likelihood of consumption is to be determined.
14. The non-transitory computer-readable storage medium of claim 8, wherein the information is received directly from the client device.