1. A method, comprising:
forming shallow drain and source regions of a P-channel transistor, said shallow drain and source regions of said P-channel transistor being in a substantially crystalline state;
forming at least a first portion of drain and source regions of an N-channel transistor while maintaining said substantially crystalline state of said shallow drain and source regions of said P-channel transistor;
forming a material layer above said P-channel transistor and said N-channel transistor; and
re-crystallizing implantation-induced damage in said first portion of the drain and source regions of said N-channel transistor by annealing said P-channel transistor and said N-channel transistor in the presence of said material layer.
2. The method of claim 1, further comprising forming a second portion of said drain and source regions of said P-channel transistor after re-crystallizing said implantation-induced damage in said first portion of the drain and source regions of said N-channel transistor, said second portion being deeper than said first portion.
3. The method of claim 1, wherein forming said first portion of the drain and source regions of said N-channel transistor comprises forming shallow drain and source regions while masking said P-channel transistor, forming spacer elements on sidewalls of gate electrodes of said P-channel transistor and said N-channel transistor and implanting an N-type dopant species in said N-channel transistor while masking said P-channel transistor.
4. The method of claim 3, wherein forming said second portion of the drain and source regions of said P-channel transistor comprises removing said material layer and implanting a P-type dopant in said P-channel transistor while masking said N-channel transistor.
5. The method of claim 4, wherein said shallow drain and source regions and said second portions of the drain and source regions of said P-channel transistor and said N-channel transistor represent the entire drain and source regions of the P-channel transistor and the N-channel transistor, respectively.
6. The method of claim 3, further comprising forming deep drain and source regions in the P-channel transistor and the N-channel transistor.
7. The method of claim 1, wherein said material layer comprises silicon nitride.
8. The method of claim 1, wherein annealing said P-channel transistor and said N-channel transistor in the presence of said material layer is performed at a temperature of approximately 550-700\xb0 C.
9. The method of claim 6, wherein forming said deep drain and source regions comprises forming a further spacer element adjacent to said spacer elements used for forming said second portions of the drain and source regions of the P-channel transistor and the N-channel transistor.
10. The method of claim 1, wherein forming said shallow drain and source regions of said P-channel transistor comprises performing an implantation sequence including an amorphization implantation, a halo implantation and P-type dopant implantation and annealing said P-channel transistor after said implantation sequence.
11. The method of claim 10, wherein annealing said P-channel transistor is performed by at least one of a low-temperature anneal process and a short pulse radiation anneal process.
12. A method, comprising:
forming a sacrificial material layer above a first transistor and a second transistor, said first transistor having shallow drain and source regions in a substantially crystalline state, said second transistor having shallow drain and source regions, at least a first portion of said drain and source regions in said second transistor being deeper than said drain and source regions in said first transistor;
annealing said first and second transistors in the presence of said sacrificial material layer; and
removing said sacrificial material layer prior to forming a first deeper drain and source portion in said first transistor.
13. The method of claim 12, further comprising forming a second deeper drain and source portion in said first and second transistors.
14. The method of claim 12, wherein said first deeper drain and source portion in each of said first and second transistors represents the complete drain and source regions of said first and second transistors.
15. The method of claim 12, further comprising forming said shallow drain and source regions in said first transistor by performing an ion implantation sequence while masking said second transistor and annealing said first and second transistors.
16. The method of claim 12, wherein said at least a first deeper drain and source region in said second transistor is formed by providing a first spacer element on sidewalls of gate electrode structures of said first and second transistors prior to forming said sacrificial material layer.
17. The method of claim 16, further comprising forming a second spacer element adjacent to said first spacer element and forming a second deeper drain and source region in each of said first and second transistors using said second spacer element as an implantation mask.
18. The method of claim 12, wherein said second transistor is a transistor exhibiting increased transistor performance when generating tensile strain in a channel region thereof.
19. A method, comprising:
defining at least a shallow drain and source region in a first plurality of transistors by ion implantation;
annealing said first plurality of transistors to reduce implantation-induced damage;
defining at least a shallow drain and source region in a second plurality of transistors by ion implantation;
forming a material layer above said first and second pluralities of transistors;
annealing said first and second pluralities of transistors in the presence of said material layer to re-crystallize implantation-induced damage in said second plurality of transistors; and
at least partially removing said material layer after annealing said first and second pluralities of transistors.
20. The method of claim 19, wherein defining at least shallow drain and source regions in said first plurality of transistors comprises forming a first type of a halo region in a first subset of said first plurality and forming a second type of a halo region in a second subset of said first plurality.
21. The method of claim 19, wherein defining at least a shallow drain and source region in said second plurality of transistors comprises forming a first type of a halo region in a first subset of said second plurality and forming a second type of a halo region in a second subset of said second plurality.
22. The method of claim 19, further comprising forming sidewall spacer elements on sidewalls of gate electrode structures of said first and second pluralities of transistors prior to forming said material layer.
23. The method of claim 19, further comprising forming a deeper drain and source portion in said second plurality of transistors after forming said material layer and prior to annealing said first and second pluralities of transistors.
24. The method of claim 19, wherein said second plurality of transistors are N-channel transistors.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An article transport device, comprising:
an endless revolving body that is configured to move along a cyclic path in a substantially horizontal direction;
a plurality of article supports each of which supports an article, wherein the article supports move together with the endless revolving body with the supports spaced apart from each other in a traveling direction;
support means for supporting the article supports to the endless revolving body such that the article supports can move between a transport position adjacent the endless revolving body and an away position spaced apart from the transport position, said support means supporting the article supports at both said transport position and said away position such that the article supports can move together with said endless revolving body; and
guide means for causing at least some of the article supports to move from the transport position to the away position and to move from the away position to the transport position, at an article delivering location or an article receiving location along the cyclic path of the endless revolving body, said guide means being provided independently of said endless revolving body.
2. The article transport device according to claim 1, further comprising:
an article-receiving placing portion, installed at the article delivering location, that receives an article from the article support that is positioned at the away position at the article delivering location;
wherein the support means is configured to vertically movably support the article support with respect to the endless revolving body in order to deliver an article, and
the guide means causes the article support that is positioned at the away position at the article delivering location to vertically move such that an article supported by the article support is delivered to the article-receiving placing portion, by lowering the article from a position above the article-receiving placing portion.
3. The article transport device according to claim 2,
wherein the article-receiving placing portion has article-placing transport means for transporting an article at the article delivering location in a substantially horizontal direction toward an article take-out location, and for placing a plurality of articles between the article delivering location and the article take-out location.
4. The article transport device according to claim 3,
wherein the support means has first means for vertically movably supporting the article support, and second means for supporting the first means in a movable manner with respect to the endless revolving body such that the article support is supported to be movable between the transport position and the away position with respect to the endless revolving body.
5. The article transport device according to claim 1,
wherein the support means has first means for vertically movably supporting the article support, and second means for supporting the first means in a movable manner with respect to the endless revolving body such that the article support is supported to be movable between the transport position and the away position with respect to the endless revolving body.
6. The article transport device according to claim 5,
wherein the guide means has a movement guide member that guides the article support such that the article support is moved between the transport position and the away position, and an elevation guide member that guides the article support such that the article support positioned at the away position at the article delivering location is vertically moved.
7. The article transport device according to claim 6,
wherein the elevation guide member has an elevation rail, and the elevation rail has an upward portion that is inclined upward, a flat middle portion, and a downward portion that is inclined downward in a side view.
8. The article transport device according to claim 5,
wherein the second means has at least one first link arm that is pivotably attached to the endless revolving body, and at least one second link arm that is pivotably attached to the first link arm.
9. The article transport device according to claim 8,
wherein the first means has a base member that is supported by the second link arm, and at least one elevation link arm having one end supported by the base member pivotably in the vertical direction and the other end supported by the article support pivotably in the vertical direction.
10. The article transport device according to claim 1, further comprising:
article delivering means installed at the article receiving location, for delivering an article supported by an article-delivering placing portion to the article support that is positioned at the away position at the article receiving location,
wherein the article delivering means causes the article-delivering placing portion to move in synchronization with movement of the article support that is positioned at the away position at the article receiving location, and the article-delivering placing portion to vertically move such that an article supported by the article-delivering placing portion is delivered to the article support, by lowering the article from a position above the article support that is positioned at the away position at the article receiving location.
11. The article transport device according to claim 1,
wherein the endless revolving body is driven by a linear motor having magnets and coils.
12. The article transport device according to claim 1,
wherein the article support has, on a surface thereof, a positioning member extending in the vertical direction for fixing the position of an article.
13. An article transport device, comprising:
a plurality of vehicles that are configured to move along a closed path;
an article support supported by at least some of the vehicles, for supporting an article;
a link mechanism for supporting the article support with respect to the vehicle such that the article support can move between a transport position adjacent corresponding one of the vehicles and an away position spaced apart from the transport position, said link mechanism supporting the article supports at both said transport position and said away position such that the article supports can move together with said vehicles; and
a guide that causes the article support to move between the away position and the transport position, said guide being provided independently of said vehicles.
14. The article transport device according to claim 13,
wherein the plurality of vehicles are coupled to each other so as to form an endless body.
15. The article transport device according to claim 13, further comprising:
a receiving member that has a support face disposed so as to receive an article supported by the article support when the article support is at the away position.
16. The article transport device according to claim 15,
wherein the receiving member is a roller conveyer having a plurality of rollers, and circumferential faces of the plurality of rollers form the support face.
17. The article transport device according to claim 15, further comprising:
an inclined face provided on an area of the receiving member, for raising an upper face of the article support to a position above the support face.
18. The article transport device according to claim 13, further comprising:
an elevation link that is provided between the link mechanism and the article support, and that allows the article support to be vertically displaced with respect to the link mechanism.
19. The article transport device according to claim 13, further comprising:
a linear motor mechanism having magnets and coils, for driving the vehicles.
20. The article transport device according to claim 13,
wherein the guide is a guide rail that receives a guide roller that is operatively coupled into the article support.