1. A field effect transistor formed at a surface of a layer of semiconductor material, said field effect transistor comprising
a gate structure formed on said surface of said layer of semiconductor material, and
a discontinuous film of material within said layer of semiconductor material and having a discontinuity aligned with said gate structure.
2. A field effect transistor as recited in claim 1, wherein said discontinuities are self-aligned with said gate structure.
3. A field effect transistor as recited in claim 1, wherein said discontinuous film is a stressed film
4. A field effect transistor as recited in claim 3, wherein said stressed film comprises an insulator.
5. A field effect transistor as recited in claim 1, wherein said discontinuous film comprises an insulator.
6. A field effect transistor as recited in claim 1, wherein said discontinuous film has a stepped or staircase profile in cross-section.
7. A field effect transistor as recited in claim 3, wherein said stressed film has a stepped or staircase profile in cross-section.
8. A field effect transistor as recited in claim 7 wherein said stepped or staircase portion defines an effective channel depth.
9. A field effect transistor as recited in claim 1, wherein said discontinuous film is an insulator including a portion formed of oxidized SiGe, wherein said discontinuity defines a location of a conductor connected to a channel of said field effect transistor.
10. A field effect transistor as recited in claim 1, further including a void within said layer of semiconductor material.
11. An integrated circuit including a field effect transistor formed at a surface of a layer of semiconductor material, said field effect transistor comprising
a gate structure formed on said surface of said layer of semiconductor material, and
a discontinuous film of material within said layer of semiconductor material and having a discontinuity aligned with said gate structure.
12. An integrated circuit as recited in claim 11, wherein said discontinuous film has a stepped or staircase profile in cross-section.
13. An integrated circuit as recited in claim 11 wherein said stepped or staircase portion defines an effective channel depth.
14. An integrated circuit as recited in claim 11, wherein said discontinuous film is an insulator including a portion formed of oxidized SiGe, wherein said discontinuity defines a location of a conductor connected to a channel of said field effect transistor.
15. An integrated circuit as recited in claim 11, further including a void within said layer of semiconductor material.
16. A method of forming a hybrid field effect transistor or integrated circuit comprising steps of
forming a gate structure,
forming a discontinuous layer having a discontinuity aligned with said gate structure within a layer of semiconductor material underlying said gate structure.
17. The method as recited in claim 8, wherein said gate structure is formed on a surface of said layer of semiconductor material.
18. A method as recited in claim 16, wherein said step of forming a discontinuous layer comprises steps of
developing differential etch rates in respective portions of a continuous layer of semiconductor material, selectively etching a said portion of said continuous layer to form a void, and
depositing material in said void.
19. A method as recited in claim 18, wherein said step of forming said discontinuous layer includes a step of oxidizing a surface of material exposed within said void.
20. A method as recited in claim 18, wherein said step of developing a differential etch rate includes a step of impurity implantation self-aligned with said gate structure.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1-4. (Cancelled).
5. A method of advancing a natural casing along the length of a hollow meat stuffing tube, comprising,
placing a hollow natural casing on the outside surface of a hollow stuffing tube having a meat emulsion discharge end,
placing a follower against an upstream end of the natural casing to slide the natural casing forwardly along the stuffing tube towards a discharge end, and
placing a hollow conical shaped restrictor on the stuffing tube with a smaller diameter end adjacent the discharge end of the stuffing tube wherein the conical shaped restrictor is rotatable about the stuffing tube to decrease the diameter of the natural casing as it is being slidably moved towards the discharge end of the tube.
6. A machine for stuffing natural casings with emulsion, comprising,
a hollow meat stuffing tube on the machine having a first end and a discharge end for extruding emulsion into a natural casing on an outer surface of the stuffing tube,
a follower slidably mounted on the stuffing tube adjacent an end of the natural casing nearest the first end of the stuffing tube,
a longitudinally movable shaft that is parallel to the stuffing tube and connected to the follower and drives the follower longitudinally about the stuffing tube, thereby pushing the natural casing towards the discharge end of the stuffing tube as the casing is filled with emulsion,
a conical shaped restrictor mounted on the stuffing tube with a smaller diameter end adjacent the discharge end of the stuffing tube to decrease the diameter of the natural casing as it is being slidably moved towards the discharge end of the tube, and
wherein the conical shaped restrictor is rotatable about the stuffing tube.