1. A non-volatile memory comprising:
a plurality of nonvolatile memory cells; and an error correcting circuit,
wherein a program command accompanied with address information and first data are received from outside,
wherein, in a program operation executed in response to said program command, first nonvolatile memory cells of said plurality of nonvolatile memory cells are selected in accordance with said address information and programmed with said first data,
wherein, after said first nonvolatile memory cells are programmed with said first data in said program operation, second nonvolatile memory cells of said plurality of nonvolatile memory cells are selected and second data stored therein are read out,
wherein said error correcting circuit judges whether said second data includes one or more errors and corrects said second data to create third data when said second data includes one or more errors, and
wherein said second nonvolatile memory cells are programmed with said third data after said second data is corrected by said error correcting circuit.
2. A nonvolatile memory according to claim 1, wherein, after said first data is programmed and before said second nonvolatile memory cells are selected:
said first nonvolatile memory cells are selected and fourth data stored therein is read out,
said error correcting circuit judges whether said fourth data includes errors which are correctable or not correctable,
said first nonvolatile memory cells are programmed again with said first data, if said fourth data includes errors which are not correctable by said error correcting circuit, and
programming of said first nonvolatile memory cells with said first data is completed if said fourth data includes errors which are correctable by said error correcting circuit.
3. A nonvolatile memory according to claim 2, wherein after said first data is programmed:
said error correcting circuit judges whether said fourth data includes errors which are correctable or not correctable, and
when said error correcting judges that said fourth data includes errors which are not correctable, third nonvolatile memory cells of said plurality of nonvolatile memory cells, different from said first nonvolatile memory cells, are selected and programmed with said first data.
4. A nonvolatile memory according to claim 3, further comprising a controller including said error correcting circuit.
5. A nonvolatile memory according to claim 4, wherein:
said controller further includes a buffer memory, and
said first data is stored in said buffer memory until completion of programming with said first data.
6. A nonvolatile memory according to claim 1, wherein each of said plurality of nonvolatile memory cells is a one-bit memory cell.
7. A nonvolatile memory according to claim 1, wherein each of said plurality of nonvolatile memory cells is a multiple-bit memory cell.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1-90. (canceled)
91. A method of electrochemically processing microelectronic workpieces in a reaction vessel having a workpiece processing zone, the method comprising:
passing a processing fluid through a distributor in the reaction vessel by flowing the processing fluid through a first channel of the distributor and a second channel of the distributor;
receiving the processing fluid from the first channel in a first electrode compartment in the reaction vessel in which a first electrode is positioned and flowing the processing fluid through the first electrode compartment;
receiving the processing fluid from the second channel in a second electrode compartment in the reaction vessel in which a second electrode is positioned and flowing the processing fluid through the second electrode compartment;
applying a first electrical potential to the first electrode and applying a second electrical potential to the second electrode that is different than the first electrical potential; and
inhibiting matter in the processing fluid from passing out of the first and second electrode compartments and to the processing zone.
92. The method of claim 91, further comprising changing at least one of the first electrical potential andor the second electrical potential while processing a workpiece.
93. The method of claim 91, further comprising directing a primary fluid flow through the reaction vessel toward the processing zone, and wherein the processing fluid flowing through the first and second channels of the distributor comprises a secondary flow of processing fluid that is separated from the primary fluid flow through at least a portion of the reaction vessel.
94. The method of claim 93 wherein the primary fluid flow comprises a catholyte and the secondary fluid flow comprises an anolyte.
95. The method of claim 94, further comprising contacting a surface of a microelectronic workpiece with the catholyte.
96. The method of claim 95, further comprising changing at least one of the first electrical potential andor the second electrical potential while contacting the surface of the microelectronic workpiece with the catholyte.
97. The method of claim 91, further comprising:
directing a primary fluid flow of a catholyte through the reaction vessel toward the processing zone;
contacting a surface of a microelectronic workpiece with the catholyte; and
separating the primary fluid flow of the catholyte from the processing fluid flowing through the first and second electrode compartments, wherein the processing fluid flowing through the first and second electrode compartment comprises an anolyte and defines a secondary fluid flow.
98. The method of claim 97 wherein separating the primary fluid flow from the secondary fluid flow comprises providing an ion-membrane in the reaction vessel located between the processing zone and at least one of the first and second electrode compartments.
99. A method of electrochemically processing a microelectronic workpiece in a reaction vessel having a workpiece processing zone, the method comprising:
directing an electrolytic processing fluid through a portion of the reaction vessel by passing the processing fluid through an inlet in the reaction vessel, flowing a first portion of the processing fluid from the inlet and through a first channel in the reaction vessel to a first electrode compartment in the reaction vessel, and flowing a second portion of the processing fluid from the inlet and through a second channel in the reaction vessel to a second electrode compartment in the reaction vessel;
inhibiting matter in the processing fluid from passing out of the electrode compartments and flowing to the processing zone;
applying a first electrical potential to a first electrode in the first electrode compartment and applying a second electrical potential to a second electrode in the second electrode compartment, wherein the first electrical potential is different than the second electrical potential; and
subjecting a surface of a microelectronic workpiece to an electrical field established by the first and second electrodes.
100. The method of claim 99, further comprising changing at least one of the first electrical potential andor the second electrical potential while subjecting the workpiece to the electrical field.
101. The method of claim 99, further comprising directing a primary fluid flow through the reaction vessel toward the processing zone, and wherein the processing fluid flowing through the first and second channels of the distributor comprises a secondary flow of processing fluid that is separated from the primary fluid flow through at least a portion of the reaction vessel.
102. The method of claim 101 wherein the primary fluid flow comprises a catholyte and the secondary fluid flow comprises an anolyte.
103. The method of claim 102 wherein subjecting the surface of the microelectronic workpiece to the electrical field established by the first and second electrodes comprises contacting the surface of a microelectronic workpiece with the catholyte.
104. The method of claim 103, further comprising changing at least one of the first electrical potential andor the second electrical potential while contacting the surface of the microelectronic workpiece with the catholyte.
105. The method of claim 99, further comprising:
directing a primary fluid flow of a catholyte through the reaction vessel toward the processing zone; and
separating the primary fluid flow of the catholyte from the processing fluid flowing through the first and second electrode compartments, wherein the processing fluid flowing through the first and second electrode compartment comprises an anolyte and defines a secondary fluid flow.
106. The method of claim 105 wherein separating the primary fluid flow from the secondary fluid flow comprises providing an ion-membrane in the reaction vessel located between the processing zone and at least one of the first and second electrode compartments.
107. A method of electrochemically processing a microelectronic workpiece in a reaction vessel having a workpiece processing zone, the method comprising:
directing a primary fluid flow through the reaction vessel and to the processing zone;
contacting a surface of a microelectronic workpiece with the primary fluid flow;
directing a secondary fluid flow through at least a portion of the reaction vessel such that a first portion of the secondary fluid flow passes through a first electrode compartment in the reaction vessel in which a first electrode is positioned and a second portion of the secondary fluid flow passes through a second electrode compartment in the reaction vessel in which a second electrode is positioned; and
inhibiting matter in the secondary fluid flow from passing into the primary fluid flow.
108. The method of claim 107, further comprising:
applying a first electrical potential to the first electrode and applying a second electrical potential to the second electrode; and
changing at least one of the first electrical potential andor the second electrical potential while processing a workpiece.
109. The method of claim 107 wherein the secondary fluid flow is separated from the primary fluid flow through at least a portion of the reaction vessel.
110. The method of claim 109 wherein the primary fluid flow comprises a catholyte and the secondary fluid flow comprises an anolyte.
111. The method of claim 107, further comprising separating the primary fluid flow from the secondary fluid flow by providing an ion-membrane in the reaction vessel located between the processing zone and at least one of the first and second electrode compartments.