1. A group III nitride semiconductor device, comprising:
a group III nitride semiconductor supporting base, the group III nitride semiconductor supporting base being composed of a group III nitride semiconductor, the group III nitride semiconductor supporting base having a primary surface, the primary surface being tilted at an angle with reference to a reference plane, the reference plane being orthogonal to a reference axis, and the reference axis extending in a direction of a c-axis of the group III nitride semiconductor;
a gallium nitride based semiconductor region provided in contact with the primary surface of the group III nitride semiconductor supporting base, the gallium nitride based semiconductor region having an oxygen, the primary surface having one of semi-polarity and non-polarity, the gallium nitride based semiconductor region including a first conductive type gallium nitride based semiconductor layer and one or more gallium nitride based semiconductor layers, a thickness of the first conductive type gallium nitride based semiconductor layer being larger than that of any of the gallium nitride based semiconductor layers, the first conductive type gallium nitride based semiconductor layer including a donor, and the donor being different from oxygen; and
an active layer provided in contact with the gallium nitride based semiconductor region.
2.-29. (canceled)
30. The group III nitride semiconductor device according to claim 1, further comprising:
a second conductive type gallium nitride based semiconductor layer provided on the active layer, the active layer being provided between the first conductive type gallium nitride based semiconductor layer and the second conductive type gallium nitride based semiconductor layer,
wherein the gallium nitride based semiconductor region includes an optical guide layer provided between the active layer and the first conductive type gallium nitride based semiconductor layer.
31. The group III nitride semiconductor device according to claim 1, wherein the active layer has an oxygen concentration of 5\xd71016 cm\u22123 or more, and the active layer has an oxygen concentration of 5\xd71018 cm\u22123 or less.
32. The group III nitride semiconductor device according to claim 30, wherein the second conductive type gallium nitride based semiconductor layer has an oxygen concentration of 5\xd71016 cm\u22123 or more, and the second conductive type gallium nitride based semiconductor layer has an oxygen concentration of 5\xd71018 cm3 or less.
33. The group III nitride semiconductor device according to claim 30, wherein
the first conductive type gallium nitride based semiconductor layer has a carbon concentration of 5\xd71018 cm\u22123 or less,
the second conductive type gallium nitride based semiconductor layer has a carbon concentration of 5\xd71018 cm\u22123 or less, and
the active layer has a carbon concentration of 5\xd71018 cm\u22123 or less.
34. The group III nitride semiconductor device according to claim 30, wherein
the second conductive type gallium nitride based semiconductor layer has an oxygen concentration of 5\xd71016 cm\u22123 or more, and
the active layer has an oxygen concentration of 5\xd71016 cm\u22123 or more.
35. The group III nitride semiconductor device according to claim 1, wherein
the active layer includes well layers and barrier layers alternatively arranged, and
the well layers have an oxygen concentration of 6\xd71017 cm3 or less.
36. The group III nitride semiconductor device according to claim 30, further comprising another second conductive type gallium nitride based semiconductor layer,
wherein the second conductive type gallium nitride based semiconductor layer has a band gap larger than that of the other second conductive type gallium nitride based semiconductor layer,
the second conductive type gallium nitride based semiconductor layer has an oxygen concentration higher than that of the active layer,
the second conductive type gallium nitride based semiconductor layer is provided between the other second conductive type gallium nitride based semiconductor layer and the active layer, and
the second conductive type gallium nitride based semiconductor layer forms a junction with the other second conductive type gallium nitride based semiconductor layer.
37. The group III nitride semiconductor device according to claim 30, further comprising an optical guide layer, the optical guide layer being composed of gallium nitride based semiconductor and being provided between the active layer and the second conductive type gallium nitride based semiconductor layer,
wherein the active layer extends along a plane inclined at an angle with reference to the reference plane, and the second conductive type gallium nitride based semiconductor layer is an electron block layer.
38. The group III nitride semiconductor device according to claim 30, wherein the primary surface has a normal line extending at an angle in a range of 10 to 170 degrees with reference to the reference axis.
39. The group III nitride semiconductor device according to claim 1, wherein the primary surface has a normal line extending at an angle within a range of from 10 to 80 degrees and from 100 to 170 degrees with reference to the reference axis.
40. The group III nitride semiconductor device according to claim 1, wherein
the primary surface has a normal line extending at an angle within a range of from 63 to 80 degrees and from 100 to 117 degrees with reference to the reference axis.
41. The group III nitride semiconductor device according to claim 1, wherein the donor is silicon.
42. The group III nitride semiconductor device according to claim 1, wherein the primary surface has semi-polarity.
43. The group III nitride semiconductor device according to claim 1, wherein the primary surface has non-polarity.
44. An epitaxial wafer for a group III nitride semiconductor device, comprising:
a group III nitride semiconductor substrate having a primary surface, the group III nitride semiconductor substrate being composed of a group III nitride semiconductor, and the primary surface being tilted at an angle with reference to a reference plane, the reference plane being orthogonal to a reference axis, and the reference axis extending in a direction of a c-axis of the group III nitride semiconductor;
a gallium nitride based semiconductor region having an oxygen, the gallium nitride based semiconductor region being provided on the primary surface of the group III nitride semiconductor substrate, the gallium nitride based semiconductor region including a first conductive type gallium nitride based semiconductor layer and one or more gallium nitride based semiconductor layers, a thickness of the first conductive type gallium nitride based semiconductor layer being larger than that of any of the gallium nitride based semiconductor layers, the first conductive type gallium nitride based semiconductor layer including a donor, and the donor being different from oxygen; and
an active layer provided on the first conductive type gallium nitride based semiconductor layer; and
a second conductive type gallium nitride based semiconductor layer provided on the active layer;
the primary surface having one of semi-polarity and non-polarity.
45. The epitaxial wafer according to claim 44, further comprising another second conductive type gallium nitride based semiconductor layer,
wherein the second conductive type gallium nitride based semiconductor layer has a band gap larger than that of the other second conductive type gallium nitride based semiconductor layer,
the second conductive type gallium nitride based semiconductor layer has an oxygen concentration higher than that of the active layer,
the second conductive type gallium nitride based semiconductor layer is provided between the other second conductive type gallium nitride based semiconductor layer and the active layer, and
the second conductive type gallium nitride based semiconductor layer forms a junction with the other second conductive type gallium nitride based semiconductor layer.
46. The epitaxial wafer according to claim 44, wherein
the second conductive type gallium nitride based semiconductor layer has an oxygen concentration of 5\xd71016 cm\u22123 or more,
the second conductive type gallium nitride based semiconductor layer has an oxygen concentration of 5\xd71018 cm\u22123 or less,
the second conductive type gallium nitride based semiconductor layer is an electron block layer,
the active layer has well layers and barrier layers alternatively arranged,
the gallium nitride based semiconductor region further includes an optical guide layer composed of gallium nitride based semiconductor, and the optical guide layer is provided between the active layer and the first conductive type gallium nitride based semiconductor layer, and
the optical guide layer extends along a plane inclined with reference to the reference plane.
47. The epitaxial wafer according to claim 44, wherein the primary surface has a normal line tilted at an angle of from 10 to 170 degrees with reference to the reference axis.
48. The epitaxial wafer according to claim 44, wherein the primary surface has a normal line tilted at an angle within a range of from 10 to 80 degrees and from 100 to 170 degrees with reference to the reference axis.
49. The epitaxial wafer according to claim 44, wherein the primary surface has a normal line tilted at an angle within a range of from 63 to 80 degrees and from 100 to 117 degrees with reference to the reference axis.
50. The epitaxial wafer according to claim 44, wherein the donor is silicon.
51. The epitaxial wafer according to claim 44, wherein the primary surface has semi-polarity.
52. The epitaxial wafer according to claim 44, wherein the primary surface has non-polarity.
53. The group III nitride semiconductor device according to claim 1, wherein the gallium nitride based semiconductor region has an oxygen concentration larger than the active layer.
54. The epitaxial wafer according to claim 44, wherein the gallium nitride based semiconductor region has an oxygen concentration larger than the active layer.
55. The group III nitride semiconductor device according to claim 30, wherein the gallium nitride based semiconductor region has an oxygen concentration larger than the second conductive type gallium nitride based semiconductor layer.
56. The epitaxial wafer according to claim 44, wherein the gallium nitride based semiconductor region has an oxygen concentration larger than the second conductive type gallium nitride based semiconductor layer.
The claims below are in addition to those above.
All refrences to claims which appear below refer to the numbering after this setence.
1. A microparticle dispersion liquid manufacturing apparatus comprising:
a container having a mesh plate disposed to partition the interior of the container into upper and lower portions, configured for performing a process in which a poorly soluble drug and a dispersion stabilizer are dissolved in a volatile organic solvent, a residue, obtained by removal by evaporation of the organic solvent contained in the solution, is fixed on an inner wall of the lower portion of the container lower than the mesh plate, and water is injected into the upper portion of the container higher than the mesh plate;
a light irradiating unit that irradiates light on the residue fixed on the inner wall on the lower portion of the container; and
a flow unit that makes the water flow near an interface of the residue and the water in the interior of the container,
wherein a microparticle dispersion liquid, having microparticles, containing the poorly soluble drug and the dispersion stabilizer, dispersed in water, is manufactured by the flow unit making the water flow near the interface of the residue and the water in the interior of the container and the light irradiating unit irradiating the light on the residue, and
wherein the flow unit includes a stirring unit that is positioned on the mesh plate, that stirs the water injected into the upper portion of the container and makes the water flow near the interface of the residue and the water in the lower portion of the container.
2. A microparticle dispersion liquid manufacturing apparatus comprising:
a container having a recess disposed at an annular region of a circumferential edge portion of the bottom surface, configured for performing a process in which a poorly soluble drug and a dispersion stabilizer are dissolved in a volatile organic solvent, a residue, obtained by removal by evaporation of the organic solvent contained in the solution, is fixed on the circumferential edge recess of the bottom surface of the container, and water is injected into an interior of the container;
a light irradiating unit that irradiates light on the residue fixed on the circumferential edge recess of the bottom surface of the container; and
a flow unit that makes the water flow near an interface of the residue and the water in the interior of the container, the flow unit being positioned above the circumferential edge recess of the bottom surface of the container,
wherein a microparticle dispersion liquid, having microparticles, containing the poorly soluble drug and the dispersion stabilizer, dispersed in water, is manufactured by the flow unit making the water flow near the interface of the residue and the water in the interior of the container and the light irradiating unit irradiating the light on the residue, and
wherein the flow unit includes a stirring unit that stirs the water injected into the interior of the container and makes the water flow near the interface of the residue and the water in the interior of the container.