1. A method for producing a laminated decorative plate, said method comprising a first production step of producing a semifinished product comprising the substeps of:
a) providing a plate made of a fiber or particle material;
b) coating the plate on at least one side with a layer of glue comprising a liquid glue curable by pressure andor heat;
c) pressing a decorative layer not impregnated with resin onto the layer of glue simultaneously with said coating the plate with the layer of glue in a single working step;
wherein the steps a) to c) are performed as a lamination process to produce the semifinished product;
d) applying a cover layer comprising a melamine resin to the semifinished product to form a laminated product; and
e) pressing and heating the laminated product while forming a surface structure of the cover layer;
wherein substeps d) and e) are performed in a short-cycle press or in a continuous double belt press.
2. The method of claim 1, wherein substeps d) and e) are performed in a short-cycle press or in a continuous double belt press using liquid melamine formaldehyde as a material for the cover layer.
3. The method of claim 1, further comprising substep f) applying a counteracting layer to the plate made of a fiber or particle material if the decorative layer and the cover layer are present on only one side of the plate.
4. The method of claim 1, further comprising substep f) applying a counteracting layer to the plate made of a fiber or particle material if the decorative layer is present on only one side of the plate.
5. The method of claim 3, wherein the substeps a), b), c), and f) are performed as part of the first production step to produce the semifished product.
6. The method of claim 4, wherein the substeps a), b), c), and f) are performed as part of the first production step to produce the semifinished product.
7. The method of claim 6, wherein substeps d) and e) are performed in a short-cycle press or in a continuous double belt press using liquid melamine formaldehyde as a material for the cover layer.
8. The method of claim 2, wherein the second production step including substeps d) and e) is performed as a separate step after the first production step including substeps a) to c) is complete.
9. The method of claim 1, wherein the semifinished product is a storable semifinished product.
10. The method of claim 1, wherein the semifinished product is stored before performing substeps d) and e).
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A manufacturing method of a semiconductor integrated circuit device comprising:
forming a gate insulating film on a semiconductor substrate,
forming a first film used as floating gates on the gate insulating film,
forming a mask member used when trenches are formed in the substrate on the first film used as the floating gates,
forming trenches in the substrate through the first film by using the mask member as a mask,
embedding insulating materials in the trenches,
removing the mask member and setting back the insulating materials at least in a plane direction,
forming spacers on side walls of the insulating materials,
forming second films used as floating gates between the spacers,
removing the spacers and forming spaces which expose the side walls of the insulating materials, and setting back the insulating materials from the spaces.
2. The method according to claim 1, wherein the second film is formed between the spacers with the upper surfaces of the spacers exposed.
3. The method according to claim 1, wherein the insulating material is set back in a depth direction and the space is formed to extend from a portion between the insulating material and the second film to a portion between the insulating material and the first film.
4. The method according to claim 2, wherein the insulating material is set back in a depth direction and the space is formed to extend from a portion between the insulating material and the second film to a portion between the insulating material and the first film.
5. A manufacturing method of a semiconductor integrated circuit device comprising:
forming a gate insulating film on a semiconductor substrate,
forming a first film used as floating gates on the gate insulating film,
forming trenches in the substrate through the first film,
embedding insulating materials in the trenches, setting back the insulating materials at least in a plane direction,
forming second films used as floating gates between side walls of the insulating materials without making directly contact with the side walls of the insulating materials, and
setting back the insulating materials from spaces formed between the insulating materials and the second films.
6. The method according to claim 5, wherein the insulating material is set back in a depth direction and the space is formed to extend from a portion between the insulating material and the second film to a portion between the insulating material and the first film.
7. The method according to claim 6, wherein the insulating material is set back in a depth direction and the space is formed to extend from a portion between the insulating material and the second film to a portion between the insulating material and the first film.