1. A method of directing air flow in a computing system, the computing system including a slot for receiving an electrical component having a set of pins, the method comprising:
passing signaling information through a presence detectable baffle that has been inserted into the slot, wherein the presence detectable baffle includes a passive chassis having a form factor consistent with an electrical component and a presence detectable pin set that is consistent with the electrical component; and
causing, by the presence detectable baffle, air flow to be directed through the computing system in a manner consistent with air flow through the computing system when the electrical component is inserted in the slot wherein:
the presence detectable pin set is configured to indicate to a system manager that the presence detectable baffle is installed and that the presence detectable baffle is passive; and
the system manager is configured to identify, the presence detectable baffle after installation of the presence detectable and manage computing system operating attributes in dependence upon presence detectable baffle attributes.
2. The method of claim 1 wherein the presence detectable baffle includes a pin set compatible with the peripheral component interconnect express (\u2018PCIe\u2019) specification.
3. The method of claim 1 wherein the slot is a peripheral component interconnect express (\u2018PCIe\u2019) expansion slot.
4. The method of claim 1 wherein the electrical component of the computing system is an expansion card.
5. The method of claim 1 wherein the electrical component of the computing system is a memory module.
6. The method of claim 1 wherein passing signaling information through the presence detectable baffle includes passing a predetermined voltage value over predetermined pins of the presence detectable pin set.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of fabricating a semiconductor device, the method comprising: forming a first metal nitride film having a first metal material and a first nitride material on a word line, as a barrier metal; forming a second metal nitride film having a second metal material and a second nitride material on the first metal nitride film, as the barrier metal: and forming a conductive layer on the second metal nitride film to form a Schottky diode between the conductive layer and the barrier metal, wherein the first metal material is richer than the first nitride material in the first metal nitride film or the second metal material is richer than the second nitride material in the second metal nitride film to reduce a work function of the barrier metal, and wherein forming the first metal nitride film comprises: providing a first metal precursor on the word line; performing a purge to remove impurities; performing a hydrogen (H2) process to remove ligands from the first metal material precursor; performing a second purge to remove impurities, and forming the first nitride material by nitrifying the first metal material using an ammonia NH3 gas or a NH3 plasma process.
2. The method of claim 1, wherein the forming the first metal nitride film comprises: repeating forming the first metal nitride film, if it is determined that the first metal nitride film does not have a desired thickness or repeating forming the second metal nitride material film, if it is determined that the second metal nitride film does not have a desired thickness.
3. The method of claim 1, wherein the first metal material is titanium and the second metal material is aluminum.
4. The method of claim 3, wherein forming the first metal nitride film and the forming the second metal nitride film are performed by an atomic layer deposition (ALD) method.
5. The method of claim 1, wherein the first metal material precursor includes any one selected from the group consisting of: Ti(NEtMe)4 (TEMATi), tetrakis(dimethylamino)titanium I (TDMATi), titanium chloride (TIC14), titanium iodide (TiI4), or titanium fluoride (TiF4).
6. The method of claim 1, wherein forming the second metal nitride film comprises: providing a second metal material precursor on the first metal nitride film; performing a purge to remove impurities; performing a hydrogen (H2) process to remove ligands from the second metal material precursor; performing a second purge to remove impurities; and forming the second nitride material by nitrifying the second metal material using an ammonia (NH3) gas or a NH3 plasma process.
7. The method of claim 6, wherein the second metal material precursor includes any one selected from the group consisting of: trimethylaluminum (TMA), tritertiarybutylaluminum (TBA), or aluminum chloride (AlCl3).
8. A method of fabricating a semiconductor device, the method comprising: providing a semiconductor substrate; depositing a first metal material on the semiconductor substrate; nitrifying the first metal material to form a first metal nitride film, as a word line; determining whether the first metal nitride material film has a desired thickness, wherein if the first metal nitride film has the desired thickness then depositing a second metal material on the first metal nitride film, nitrifying the second metal material to form a second metal nitride film, as the word line, and determining whether the second metal nitride film is deposited to a desired thickness, wherein if the second metal nitride film has the desired thickness, then forming a barrier metal layer on the second metal nitride material film; and depositing a P+polysilicon layer on the barrier metal layer to form a Schottky diode, wherein the first metal material is richer than the first nitride material in the first metal nitride film or the second metal material is richer than the second nitride material, in the second metal nitride film, to be reduced a work function of the word line, wherein depositing the first metal material and nitrifying the first metal material comprises: providing a first metal material precursor on the semiconductor substrate; performing a purge to remove impurities; performing a hydrogen (H2) process to remove ligands from the first metal material precursor; performing a second purge to remove impurities; and forming the first metal nitride film by nitrifying the first metal material using an ammonia (NH3) gas or a NH3 plasma process.
9. The method of claim 8, further comprising: repeating the depositing of the first metal material and the forming of the first nitride material, if it is determined that the first metal nitride film does not have the desired thicknesses; or repeating the depositing of the second metal material and the forming of the second first nitride material if it is determined that the second metal nitride film does not have the desired thicknesses.
10. The method of claim 8, wherein the first metal material is Titanium (Ti) and the second metal material is aluminum (Al).
11. The method of claim 10, wherein depositing the first metal material and depositing the second metal material, nitrifying the first metal material and nitrifying the second metal material are performed by an atomic layer deposition (ALD) method.
12. the method of claim 8, wherein the first material precursor includes: Ti(NEtMe)4 (TEMATi), tetrakis(dimethylamino)titanium I (TDMATi), titanium chloride (TIC14), titanium iodide (TiI4), or titanium fluoride (TiF4), or a combination thereof.
13. The method of claim 8, wherein depositing the second metal material and nitrifying the second metal material comprises: providing a second metal material precursor on the first metal nitride material film; performing a purge to remove impurities; performing a hydrogen (H2) process to remove ligands from the second metal material precursor; performing a second purge to remove impurities; and forming the second metal nitride film by nitrifying the second metal material using an ammonia (NH3) gas or a NH3 plasma process.
14. The method of claim 13, wherein the second metal material precursor includes any one selected from the group consisting of trimethylaluminum (TMA), tritertiarybutylaluminum (TBA), aluminum chloride (AlCl3), or a combination thereof.