1. An optical waveguide device comprising:
a substrate,
a metal layer arranged on said substrate,
claddings arranged on said metal layer,
cores, arranged on said claddings, for transmitting lights,
optically non-transmissive material coating sides of said claddings, and
optically non-transmissive and electrically insulating material coating the top faces of said claddings.
2. The optical waveguide device, as claimed in claim 1, wherein:
said optically non-transmissive material and said optically non-transmissive and electrically insulating material have a property of absorbing or reflecting said lights.
3. The optical waveguide device, as claimed in claim 1, wherein:
said optically non-transmissive material is metal, metal-doped glass or ceramic, and said optically non-transmissive and electrically insulating material is ceramic, metal-doped glass or resin.
4. The optical waveguide device, as claimed in claim 3, wherein:
said metal is gold, said ceramic is silicon carbide or silicon nitride, and said resin is epoxy resin.
5. The optical waveguide device, as claimed in claim 1, wherein:
the coating with said optically non-transmissive material is accomplished by a film forming process, and the coating with said optically non-transmissive and electrically insulating material is accomplished by painting.
6. The optical waveguide device, as claimed in claim 1, wherein:
said optical waveguide device is further provided with light receiving elements for receiving lights emitted from the end faces of said cores.
7. The optical waveguide device, as claimed in claim 6, wherein:
dents in which the end faces of said cores are exposed are formed in said optical waveguide device, and inside faces of said dents are coated with said optically non-transmissive material except where the end faces of said cores are exposed.
8. The optical waveguide device, as claimed in claim 6, wherein:
optical paths from the end faces of said cores to light receiving faces of said light receiving elements and the surroundings of said light receiving elements are filled with said optically transmissive and electrically insulating material, whose top is covered with said optically non-transmissive and electrically insulating material.
9. The optical waveguide device, as claimed in claim 6, wherein:
optical paths from the end faces of said cores to the light receiving faces of said light receiving elements and the surroundings of said light receiving elements are filled with said optically transmissive and electrically insulating material, and said light receiving elements are blocked from each other by said optically non-transmissive material.
10. The optical waveguide device, as claimed in claim 7, wherein:
said optical waveguide device is further provided with mirrors, formed in said dents, for reflecting said lights emitted from the end faces of said cores and inputting them into light receiving faces of said light receiving elements.
11. The optical waveguide device, as claimed in claim 10, wherein:
said mirrors are wedge-shaped projections fixed to bottom faces of said dents.
12. The optical waveguide device, as claimed in claim 7, wherein:
projections for blocking lights from being inputted into said dents elsewhere than from the end faces of said cores are formed on both sides of the end faces of said cores.
13. The optical waveguide device, as claimed in claim 7, wherein:
projections for blocking lights from being inputted into said dents elsewhere than from the end faces of said cores are formed on both sides of the end faces of said cores and on bottom faces of said dents.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A spin valve sensor comprising:
a first pinned layer having a first width and a first magnetic orientation;
a free layer having a second width disposed above the first pinned layer; and
a bias layer having the second width disposed above the free layer and a second magnetic orientation orthogonal to the first magnetic orientation, wherein the second width is smaller than the first width.
2. The spin valve sensor according to claim 1, further comprising:
a second pinned layer having a third magnetic orientation anti-parallel to the first magnetic orientation; and
a coupling layer disposed between the first and second pinned layers.
3. The spin valve sensor according to claim 2, wherein a thickness of the first pinned layer is substantially equal to a thickness of the second pinned layer.
4. The spin valve sensor according to claim 3, further comprising an anti-ferromagnetic (AFM) layer disposed adjacent to the first pinned layer.
5. The spin valve sensor according to claim 4, wherein a thickness of the AFM layer establishes exchange coupling between the AFM layer and the first pinned layer.
6. The spin valve sensor according to claim 4, wherein the first and second pinned layers are self-pinned.
7. A magnetic storage system, comprising:
a magnetic recording medium;
a spin valve sensor disposed proximate to the recording medium, the spin valve sensor, including:
a first pinned layer having a first width and a first magnetic orientation;
a free layer having a second width disposed above the first pinned layer; and
a biasing layer having the second width disposed above the free layer and a second magnetic orientation orthogonal to the first magnetic orientation, wherein the second width is smaller than the first width.
8. The magnetic storage system according to claim 7, further comprising:
a second pinned layer having a third magnetic orientation anti-parallel to the first magnetic orientation; and
a coupling layer disposed between the first and second pinned layers.
9. The magnetic storage system according to claim 8, wherein a thickness of the first pinned layer is substantially equal to a thickness of the second pinned layer.
10. The magnetic storage system according to claim 9, further comprising an anti-ferromagnetic (AFM) layer disposed adjacent to the first pinned layer.
11. The magnetic storage system according to claim 10, wherein a thickness of the AFM layer establishes exchange coupling between the AFM layer and the first pinned layer.
12. The magnetic storage system according to claim 10, wherein the first and second pinned layers are self-pinned.