1. A method of forming a resistance variable memory element comprising the steps of:
forming a first electrode;
forming a first chalcogenide glass layer in contact with said first electrode;
forming a first metal containing layer in contact with said first chalcogenide glass layer; and
forming a second chalcogenide glass layer in electrical communication with said first metal containing layer;
forming a second metal containing layer in contact with said first chalcogenide glass layer;
forming a third chalcogenide glass layer in contact with said second metal containing layer; and
forming a second electrode in electrical communication with said third chalcogenide glass layer, said memory element being constructed and arranged such that a resistance value of said memory element switches from a higher to lower resistance state upon application of a positive voltage in a first voltage range and from a lower to higher resistance state upon application of a positive voltage in a second voltage range.
2. The method of claim 1 wherein said chalcogenide glass layers comprise a material having the formula GexSe100\u2212x, wherein x is between about 18 to about 43.
3. The method of claim 2 wherein said chalcogenide glass layers have a stoichiometry of about Ge40Se60.
4. The method of claim 1 wherein said chalcogenide glass layers comprise a plurality of chalcogenide glass layers.
5. The method of claim 1 wherein said metal containing layers comprise a plurality of metal containing layers.
6. The method of claim 1 wherein one or more of said chalcogenide glass layers contains a metal dopant.
7. The method of claim 1 wherein one or more of said metal containing layers comprises silver-selenide.
8. The method of claim 7 wherein said metal dopant comprises silver.
9. The method of claim 1 wherein said metal containing layers have a thickness which is equal to or greater than the thickness of each of said chalcogenide glass layers.
10. The method of claim 1 wherein each of said metal containing layers has a first thickness and each of said chalcogenide glass layers has a second thickness whereby a thickness ratio of said first thickness to said second thickness is between about 5:1 to about 1:1.
11. The method of claim 10 further wherein said thickness ratio of said first thickness to said second thickness is between about 3.3:1 to about 2:1.
12. A method of forming a resistance variable memory element comprising:
forming a first chalcogenide glass layer;
forming a silver-selenide layer in contact with said first glass layer; and
forming a second chalcogenide glass layer in contact with said silver-selenide layer, said memory element being constructed and arranged such that a resistance value of said memory element switches from a higher to lower resistance state upon application of a first positive voltage and from a lower to higher resistance state upon application of a positive voltage in an second voltage.
13. The method of claim 12 wherein said chalcogenide glass material has a stoichiometric composition of about Ge40Se60.
14. The method of claim 12 wherein at least one of said glass layers contains a metal dopant.
15. The method of claim 14 wherein said metal dopant comprises silver.
16. The method of claim 12 further comprising the step of forming alternating layers of said chalcogenide glass material and said silver-selenide layer.
17. The method of claim 12 wherein said layer formed of said chalcogenide glass material further contains a metal dopant.
18. The method of claim 17 wherein said metal dopant comprises silver.
19. The method of claim 12 wherein said metal containing layer has a thickness which is equal to or greater than a thickness of each of said first and second chalcogenide glass layers.
20. The method of claim 12 wherein said metal containing layer comprises a plurality of silver-selenide layers in serial contact with each other.
21. A method of forming a resistance variable memory element comprising:
forming a first electrode;
forming a second electrode; and
forming a plurality of chalcogenide glass layers and at least one metal containing layer between said first and second electrodes, whereby said plurality of chalcogenide glass layers alternate with said at least one metal containing layer, with one of said chalcogenide glass layers being in contact with said first electrode and another of said chalcogenide glass layers being in contact with said second electrode, said layers being constructed and arranged such that a resistance value of said memory element switches from a higher to lower resistance state upon application of first a positive voltage and from a lower to higher resistance state upon application of a second positive voltage.
22. The method of claim 21 wherein said at least one metal containing layer comprises one or more silver-selenide layers.
23. The method of claim 21 wherein one or more of said plurality of chalcogenide glass layers comprises a plurality of chalcogenide glass layers.
24. The method of claim 21 wherein one or more of said at least one metal containing layer comprises a plurality of metal containing layers.
25. The method of claim 21 wherein one or more of said plurality of chalcogenide glass layers contains a metal dopant.
26. The method of claim 25 wherein said metal dopant comprises silver.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A system of driving a touch screen, the system comprising:
a touch sensitive panel including a plurality of first sensor lines parallel to a first direction, and a plurality of second sensor lines parallel to a second direction;
a driving circuit coupled with the first sensor lines, wherein the driving circuit is configured to sequentially apply a first scanning signal through each of the first sensor lines;
a first sensing circuit for reporting a plurality of first response signals that are transmitted through the second sensor lines in response to each applied first scanning signal; and
a controller configured to:
identify one or more touch location based on the first response signals reported by the first sensing circuit, and
track each identified touch location.
2. The system according to claim 1, wherein the sensing circuit includes a plurality of integrator circuits respectively coupled with the second sensor lines.
3. The system according to claim 2, wherein each of the integrator circuits comprises:
an operational amplifier having a non-inverting input, an inverting input and an output, wherein the non-inverting input is coupled with a reference voltage; and
a variable capacitor and a switch respectively coupled in parallel between the inverting input and the output of the operational amplifier.
4. The system according to claim 3, wherein the inverting input of the operational amplifier is coupled with one of the second sensor lines.
5. The system according to claim 1, wherein each of the first sensor lines is coupled with a plurality of first electrodes laid on a first plane, and each of the second sensor lines is coupled with a plurality of second electrodes laid on a second plane parallel to the first plane.
6. The system according to claim 5, wherein the occurrence of a touch event at a touch location on the touch sensitive panel causes a change in capacitance coupling between a neighboring pair of the first and second electrodes that is adjacent to the touch location.
7. The system according to claim 6, wherein the change in capacitance coupling is detected from the first response signal that is transmitted through the second sensor line associated with the neighboring pair of the first and second electrodes, when the first scanning signal is applied through the first sensor line associated with the neighboring pair of the first and second electrodes.
8. The system according to claim 1, wherein the driving circuit is further coupled with each of the second sensor lines, and the first sensor lines are further coupled with a second sensing circuit.
9. The system according to claim 8, wherein the driving circuit is further configured to sequentially apply a second scanning signal through each of the second sensor lines, and the second sensing circuit is adapted to report second response signals that are transmitted through the first sensor lines in response to each applied second scanning signal.
10. The system according to claim 9, wherein the controller is further configured to identify and track each touch location on the touch sensitive panel based on the first and second response signals.
11. A method of driving a touch screen system, wherein the touch screen system includes a touch sensitive panel having a plurality of spaced-apart first sensor lines laid parallel to a first direction and a plurality of spaced-apart second sensor lines laid parallel to a second direction, the method comprising:
performing a plurality of successive scanning cycles through the touch sensitive panel, wherein each of the scanning cycles comprises:
applying a scanning signal one at a time through each of the first sensor lines;
for each applied scanning signal, identifying one or more touch location on the touch sensitive panel based on a plurality of response signals read through the second sensor lines; and
tracking each identified touch location through the successive scanning cycles.
12. The method according to claim 11, wherein the second sensor lines are respectively coupled with a plurality of integrator circuits through which the response signals are read for each applied scanning signal.
13. The method according to claim 11, wherein each of the first sensor lines is coupled with a plurality of first electrodes laid on a first plane, and each of the second sensor lines is coupled with a plurality of second electrodes laid on a second plane parallel to the first plane.
14. The method according to claim 13, wherein the occurrence of a touch event at a touch location on the touch sensitive panel causes a change in capacitance coupling between a neighboring pair of the first and second electrodes that is adjacent to the touch location.
15. The method according to claim 14, wherein the step of identifying one or more touch location comprises detecting the change in capacitance coupling from the response signal that is transmitted through the second sensor line associated with the neighboring pair of the first and second electrodes, when the scanning signal is applied through the first sensor line associated with the neighboring pair of the first and second electrodes.
16. A method of driving a touch screen system, wherein the touch screen system includes a touch sensitive panel having a plurality of first sensor lines parallel to a first direction and a plurality of second sensor lines parallel to a second direction, the method comprising:
performing a plurality of successive scanning cycles through the touch sensitive panel, wherein each of the scanning cycles comprises:
applying a first scanning signal one at a time through each of the first sensor lines;
applying a second scanning signal one at a time through each of the second sensor lines;
for each first scanning signal applied on one first sensor line, identifying one or more touch location on the touch sensitive panel based on a plurality of first response signals read through the second sensor lines;
for each second scanning signal applied on one second sensor line, identifying one or more touch location on the touch sensitive panel based on a plurality of second response signals read through the first sensor lines; and
tracking each identified touch location on the touch sensitive panel through the successive scanning cycles.
17. The method according to claim 16, wherein the first and second sensor lines are respectively coupled with a plurality of integrator circuits.
18. The method according to claim 16, wherein each of the first sensor lines is coupled with a plurality of first electrodes laid on a first plane, and each of the second sensor lines is coupled with a plurality of second electrodes laid on a second plane parallel to the first plane.
19. The method according to claim 18, wherein the occurrence of a touch event at a touch location on the touch sensitive panel causes a change in capacitance coupling between a neighboring pair of the first and second electrodes that is adjacent to the touch location.
20. The method according to claim 19, wherein the step of identifying one or more touch location based on the response signals comprises detecting the change in capacitance coupling from the response signal that is transmitted through the second sensor line associated with the neighboring pair of the first and second electrodes, when the scanning signal is applied through the first sensor line associated with the neighboring pair of the first and second electrodes.