What is claimed is:
1. A semiconductor device equipped with an interconnection or a via plug, being formed by the damascene method; which comprises
a structure in which a barrier film made of a plurality of layered films containing silicon and carbon, with different carbon contents, is disposed between said interconnection or said via plug and its overlying layer that is an interlayer insulating film.
2. A semiconductor device equipped with an interconnection or a via plug, being formed by the damascene method; which comprises
a structure in which a barrier film made of a plurality of layered films containing silicon, carbon and nitrogen, with different carbon contents, is disposed between said interconnection or said via plug and its overlying layer that is an interlayer insulating film.
3. A semiconductor device according to claim 1 or 2, wherein said barrier film comprises, on the side of said interconnection or said via plug, a low-carbon-concentration film with a small carbon content and, on the side of said interlayer insulating film, a high-carbon-concentration film with a carbon content larger than that of said low-carbon-concentration film.
4. A semiconductor device according to claim 3; wherein when, in the infrared absorption spectrum for said barrier film, infrared absorption areas of infrared absorption bands having a peak in the vicinity of 810 cm1 and having a peak in the vicinity of 1250 cm1 are denoted by I1 and I2, respectively,
a value of I2I1 for said low-carbon-concentration film in said barrier film is approximately 0.004 to 0.0067, and a value of I2I1 for said high-carbon-concentration film in said barrier film is approximately 0.0067 to 0.014.
5. A semiconductor device according to one of claims 1-4, wherein said interlayer insulating film formed on said barrier film is made of an insulating film whose main constituent elements are silicon, carbon and oxygen.
6. A method of manufacturing a semiconductor device wherein an interconnection or a via plug is formed by the damascene method; which comprises the steps of
disposing a barrier film made of a plurality of layered films containing silicon and carbon, with different carbon contents, between said interconnection or said via plug and its overlying layer that is an interlayer insulating film.
7. A method of manufacturing a semiconductor device wherein an interconnection or a via plug is formed by the damascene method; which comprises the steps of
disposing a barrier film made of a plurality of layered films containing silicon, carbon and nitrogen, with different carbon contents, between said interconnection or said via plug and its overlying layer that is an interlayer insulating film.
8. A method of manufacturing a semiconductor device according to claim 6 or 7, wherein a low-carbon-concentration film with a small carbon content is formed on the side of said interconnection or said via plug, and thereafter a high-carbon-concentration film with a carbon content larger than that of said low-carbon-concentration film is formed on the side of said interlayer insulating film.
9. A method of manufacturing a semiconductor device according to one of claims 6-8, wherein said interlayer insulating film placed on said barrier film is formed of an insulating film whose main constituent elements are silicon, carbon and oxygen.
10. A method of manufacturing a semiconductor device, which comprises at least the steps of:
forming, on a substrate in which an interconnection or a via plug is formed, a barrier film wherein, at least, a low-carbon-concentration film containing silicon, carbon and nitrogen, with a small carbon content, and a high-carbon-concentration film containing silicon, carbon and nitrogen, with a carbon content larger than that of said low-carbon-concentration film, are laid in this order;
forming, on said barrier film, an interlayer insulating film, main constituent elements of which are silicon, carbon and oxygen;
performing dry etching, while using a resist pattern formed on said interlayer insulating film as a mask and said low-carbon-concentration film as an etching stopper, and thereby removing said interlayer insulating film and said high-carbon-concentration film;
removing said resist pattern by means of ashing with an oxygen-containing gas;
removing said low-carbon-concentration film by etch back to form a via hole or an interconnection trench; and
filling up said via hole or said interconnection trench with a barrier metal and an interconnection material, and thereby forming a via plug or an interconnection.
11. A method of manufacturing a semiconductor device, which comprises at least the steps of:
forming, on a substrate in which a first interconnection is formed, a first barrier film wherein, at least, a low-carbon-concentration film containing silicon, carbon and nitrogen, with a small carbon content, and a high-carbon-concentration film containing silicon, carbon and nitrogen, with a carbon content larger than that of said low-carbon concentration film, are laid in this order;
forming, on said first barrier film, a first interlayer insulating film, a second barrier film and a second interlayer insulating film, main constituent elements of any of which are silicon, carbon and oxygen;
performing dry etching, while using a first resist pattern formed on said second interlayer insulating film as a mask and said low-carbon-concentration film as an etching stopper, and thereby removing said second interlayer insulating film, said second barrier film, said first interlayer insulating film and said high-carbon-concentration film;
removing said first resist pattern by means of ashing with an oxygen-containing gas;
performing dry etching, while using a second resist pattern formed on said second interlayer insulating film as a mask and said second barrier film as an etching stopper, and thereby removing said second interlayer insulating film;
removing said second resist pattern by means of ashing with an oxygen-containing gas;
removing said low-carbon-concentration film by etch back to form an interconnection trench that includes a via hole; and
filling up said interconnection trench with a barrier metal and an interconnection material, and thereby forming a second interconnection.
12. A method of manufacturing a semiconductor device according to one of claims 6-11, wherein, with the plasma CVD (Chemical Vapor Deposition) method being used, said barrier film or said first barrier film is formed continuously in one and the same chamber, changing the source gas pressure.
13. A method of manufacturing a semiconductor device according to claim 12, wherein one of trimethylsilane, tetramethylsilane and trimethylvinylsilane is used for said source gas.
14. A method of manufacturing a semiconductor device according to one of claims 8, 10 and 11, wherein, using the plasma CVD method with a source gas of trimethylsilane, NH3 and He, said low-carbon-concentration film is grown at a gas pressure of approximately 330 to 530 Pa, while said high-carbon-concentration film is grown at a gas pressure of approximately 530 to 730 Pa.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for adjusting a channel delay parameter of a multi-channel signal, comprising:
performing down-mixing processing on a multi-channel signal to obtain a processed signal;
calculating energy distribution of the processed signal; and
determining whether a comb filtering effect occurs in the processed signal according to the energy distribution of the processed signal, and adjusting a channel delay parameter of the multi-channel signal if the comb filtering effect occurs in the processed signal.
2. The method according to claim 1, wherein the processed signal comprises a sum signal and an edge signal.
3. The method according to claim 1, wherein the performing the down-mixing processing on the multi-channel signal to obtain the processed signal comprises one of:
performing down-mixing processing on a current frame signal of the multi-channel signal to obtain a sum signal and an edge signal; or,
performing down-sampling on a current frame signal of the multi-channel signal, and performing down-mixing processing on a down-sampled signal, which is obtained after the down-sampling, to obtain a sum signal and an edge signal.
4. The method according to claim 1, wherein
the performing the down-mixing processing on the multi-channel signal to obtain the processed signal comprises:
obtaining a channel delay parameter of a current frame of the multi-channel signal, and performing down-mixing on the multi-channel signal according to the channel delay parameter of the current frame to obtain a down-mixed sum signal and a down-mixed edge signal; and
the calculating the energy distribution of the processed signal comprises:
dividing a superposed value of energy parameters of each sampling point in the edge signal by a superposed value of energy parameters of each sampling point in the sum signal to obtain a first energy parameter ratio.
5. The method according to claim 4, wherein the determining whether the comb filtering effect occurs in the processed signal according to the energy distribution of the processed signal comprises one of:
determining that the comb filtering effect occurs in the processed signal if the first energy parameter ratio is greater than a preset first threshold value; or
determining that the comb filtering effect occurs in the processed signal if the first energy parameter ratio, which is obtained after long smoothing processing, is greater than a preset second threshold value.
6. The method according to claim 4, wherein
the calculating the energy distribution of the processed signal further comprises:
calculating a cross-correlation coefficient corresponding to zero delay of the multi-channel signal, and performing long smoothing processing to obtain a cross-correlation coefficient after the long smoothing processing; and
the determining whether the comb filtering effect occurs in the processed signal according to the energy distribution of the processed signal comprises:
determining that the comb filtering effect occurs in the processed signal, if the cross-correlation coefficient, which is obtained after the long smoothing processing, is greater than a preset fifth threshold value, and the first energy parameter ratio is greater than a preset first threshold value; or
determining that the comb filtering effect occurs in the processed signal, if the cross-correlation coefficient, which is obtained after the long smoothing processing, is greater than a preset fifth threshold value, and the first energy parameter ratio obtained after the long smoothing processing is greater than a preset second threshold value.
7. The method according to claim 4, wherein
the performing the down-mixing processing on the multi-channel signal to obtain the processed signal further comprises:
performing down-mixing on the multi-channel signal according to the channel delay parameter being zero, to obtain a down-mixed second sum signal and a down-mixed second edge signal; and
the calculating the energy distribution of the processed signal further comprises:
dividing a superposed value of energy parameters of each sampling point in the second edge signal by a superposed value of energy parameters of each sampling point in the second sum signal to obtain a second energy parameter ratio; and
dividing the first energy parameter ratio by the second energy parameter ratio, to obtain a third energy parameter ratio; or, performing long smoothing processing on the first energy parameter ratio and the second energy parameter ratio respectively, and dividing the first energy parameter ratio, which is obtained after the long smoothing processing, by the second energy parameter ratio obtained after the long smoothing processing, to obtain a third energy parameter ratio.
8. The method according to claim 7, wherein the determining whether the comb filtering effect occurs in the processed signal according to the energy distribution of the processed signal comprises:
determining that the comb filtering effect occurs in the processed signal if the third energy parameter ratio is greater than a preset third threshold value.
9. The method according to claim 7, wherein
the calculating the energy distribution of the processed signal further comprises:
performing floor removing processing on the third energy parameter ratio, to obtain a fourth energy parameter ratio, and performing long smoothing processing on the fourth energy parameter ratio, to obtain the fourth energy parameter ratio after the long smoothing processing.
10. The method according to claim 9, wherein the judging whether the comb filtering effect occurs in the processed signal according to the energy distribution of the processed signal comprises:
determining that the comb filtering effect occurs in the processed signal if the fourth energy parameter ratio, which is obtained after the long smoothing processing, is greater than a preset fourth threshold value.
11. The method according to claim 7, wherein
the calculating the energy distribution of the processed signal further comprises:
calculating a cross-correlation coefficient corresponding to zero delay of the multi-channel signal, and performing long smoothing processing to obtain a cross-correlation coefficient after the long smoothing processing; and
the determining whether the comb filtering effect occurs in the processed signal according to the energy distribution of the processed signal comprises:
judging that the comb filtering effect occurs in the processed signal, if the cross-correlation coefficient, which is obtained after the long smoothing processing, is greater than a preset fifth threshold value, and the third energy parameter ratio is greater than a preset third threshold value.
12. The method according to claim 9, wherein
the calculating the energy distribution of the processed signal further comprises:
calculating a cross-correlation coefficient corresponding to zero delay of the multi-channel signal, and performing long smoothing processing to obtain a cross-correlation coefficient after the long smoothing processing; and
the determining whether the comb filtering effect occurs in the processed signal according to the energy distribution of the processed signal comprises:
determining that the comb filtering effect occurs in the processed signal, if the cross-correlation coefficient, which is obtained after the long smoothing processing, is greater than a preset fifth threshold value, and the fourth energy parameter ratio, which is obtained after the long smoothing processing, is greater than a preset fourth threshold value.
13. The method according to claim 1, wherein the adjusting the channel delay parameter of the multi-channel signal comprises one of:
setting the channel delay parameter of a current frame of the multi-channel signal to zero;
calculating a cross-correlation coefficient corresponding to zero delay of the multi-channel signal, and increasing the cross-correlation coefficient corresponding to the zero delay; or
calculating a normalization cross-correlation coefficient corresponding to zero delay of the multi-channel signal, and increasing the normalization cross-correlation coefficient corresponding to the zero delay.
14. The method according to claim 13, wherein the increasing the cross-correlation coefficient corresponding to the zero delay comprises:
adding a constant to the cross-correlation coefficient corresponding to the zero delay; or multiplying the cross-correlation coefficient corresponding to the zero delay by a constant; or multiplying the cross-correlation coefficient corresponding to the zero delay by an amplification factor, wherein the amplification factor is obtained according to the energy distribution of the processed signal.
15. The method according to claim 1, further comprising:
adjusting a channel delay parameter of a frame in a tailing range after the current frame, after the channel delay parameter of the current frame signal of the multi-channel signal is adjusted.
16. An apparatus for adjusting a channel delay parameter of a multi-channel signal, comprising:
a down-mixing processing module, configured to perform down-mixing processing on a multi-channel signal to obtain a processed signal;
an energy distribution obtaining module, configured to calculate energy distribution of the processed signal;
a determining module, configured to determine whether a comb filtering effect occurs in the processed signal according to the energy distribution of the processed signal; and
a channel delay parameter adjusting module, configured to adjust a channel delay parameter of the multi-channel signal if the determining module fudges determines that the comb filtering effect occurs in the processed signal.
17. The apparatus according to claim 16, wherein
the down-mixing processing module is configured to perform down-mixing processing on a current frame signal of the multi-channel signal to obtain a sum signal and an edge signal; or,
the down-mixing processing module is configured to perform down-sampling on a current frame signal of the multi-channel signal, and perform down-mixing processing on a down-sampled signal, which is obtained after the down-sampling, to obtain a sum signal and an edge signal.
18. The apparatus according to claim 16, wherein
the down-mixing processing module is configured to obtain a channel delay parameter of a current frame of the multi-channel signal, and perform down-mixing on the multi-channel signal according to the channel delay parameter of the current frame to obtain a down-mixed sum signal and a down-mixed edge signal; and
the energy distribution obtaining module is configured to divide a superposed value of energy parameters of each sampling point in the edge signal by a superposed value of energy parameters of each sampling point in the sum signal to obtain a first energy parameter ratio.
19. The apparatus according to claim 18, wherein
the determining module is configured to determine that the comb filtering effect occurs in the processed signal if the first energy parameter ratio is greater than a preset first threshold value; or
the determining module is configured to determine that the comb filtering effect occurs in the processed signal if the first energy parameter ratio, which is obtained after long smoothing processing, is greater than a preset second threshold value.
20. The apparatus according to claim 18, wherein the energy distribution obtaining module is further configured to calculate a cross-correlation coefficient corresponding to zero delay of the multi-channel signal, and perform long smoothing processing to obtain a cross-correlation coefficient after the long smoothing processing; and
the determining module is configured to determine that the comb filtering effect occurs in the processed signal, if the cross-correlation coefficient, which is obtained after the long smoothing processing, is greater than a preset fifth threshold value, and the first energy parameter ratio is greater than a preset first threshold value;
or the determining module is configured to determine that the comb filtering effect occurs in the processed signal, if the cross-correlation coefficient, which is obtained after the long smoothing processing, is greater than a preset fifth threshold value, and the first energy parameter ratio, which is obtained after the long smoothing processing, is greater than a preset second threshold value.
21. The apparatus according to claim 18, wherein
the down-mixing processing module is further configured to perform down-mixing on the multi-channel signal according to the channel delay parameter being zero, to obtain a down-mixed second sum signal and a down-mixed second edge signal; and
the energy distribution obtaining module is further configured to divide a superposed value of energy parameters of each sampling point in the second edge signal by a superposed value of energy parameters of each sampling point in the second sum signal to obtain a second energy parameter ratio, and divide the first energy parameter ratio by the second energy parameter ratio, to obtain a third energy parameter ratio; or, perform long smoothing processing on the first energy parameter ratio and the second energy parameter ratio respectively, and divide the first energy parameter ratio, which is obtained after the long smoothing processing, by the second energy parameter ratio obtained after the long smoothing processing, to obtain a third energy parameter ratio.
22. The apparatus according to claim 21, wherein the determining module is configured to determine that the comb filtering effect occurs in the processed signal if the third energy parameter ratio is greater than a preset third threshold value.
23. The apparatus according to claim 21, wherein the energy distribution obtaining module is further configured to perform floor removing processing on the third energy parameter ratio, to obtain a fourth energy parameter ratio, and perform long smoothing processing on the fourth energy parameter ratio, to obtain the fourth energy parameter ratio after the long smoothing processing.
24. The apparatus according to claim 23, wherein the determining module is configured to determine that the comb filtering effect occurs in the processed signal if the fourth energy parameter ratio, which is obtained after the long smoothing processing, is greater than a preset fourth threshold value.
25. The apparatus according to claim 21, wherein the energy distribution obtaining module is further configured to calculate a cross-correlation coefficient corresponding to zero delay of the multi-channel signal, and perform long smoothing processing to obtain a cross-correlation coefficient after the long smoothing processing; and
the determining module is configured to determine that the comb filtering effect occurs in the processed signal, if the cross-correlation coefficient, which is obtained after the long smoothing processing, is greater than a preset fifth threshold value, and the third energy parameter ratio is greater than a preset third threshold value.
26. The apparatus according to claim 23, wherein the energy distribution obtaining module is further configured to calculate a cross-correlation coefficient corresponding to zero delay of the multi-channel signal, and perform long smoothing processing to obtain a cross-correlation coefficient after the long smoothing processing; and
the determining module is configured to determine that the comb filtering effect occurs in the processed signal, if the cross-correlation coefficient, which is obtained after the long smoothing processing, is greater than a preset fifth threshold value, and the fourth energy parameter ratio, which is obtained after the long smoothing processing, is greater than a preset fourth threshold value.
27. The apparatus according to claim 16, wherein the channel delay parameter adjusting module is configured to set a channel delay parameter of a current frame of the multi-channel signal to zero; or, the channel delay parameter adjusting module is configured to calculate a cross-correlation coefficient corresponding to zero delay of the multi-channel signal, and increase the cross-correlation coefficient corresponding to the zero delay; or, the channel delay parameter adjusting module is configured to calculate a normalization cross-correlation coefficient corresponding to zero delay of the multi-channel signal, and increase the normalization cross-correlation coefficient corresponding to the zero delay.
28. The apparatus according to claim 16, wherein the channel delay parameter adjusting module is further configured to adjust a channel delay parameter of a frame in a tailing range after the current frame, after the channel delay parameter of the current frame signal of the multi-channel signal is adjusted.