What is claimed is:
1. An apparatus for polishing and then washing a semiconductor wafer, said apparatus comprising:
an enclosing structure capable of containing and preventing an atmosphere within said enclosing structure from escaping therefrom to exterior thereof;
a loading unit for receipt of a semiconductor wafer to be polished;
a polishing system within said enclosing structure for polishing the semiconductor wafer to form a polished semiconductor wafer;
a washing system within said enclosing structure for washing the polished semiconductor wafer to form a clean polished semiconductor wafer;
a drying system within said enclosing structure for drying the clean polished semiconductor wafer to form a clean and dry polished semiconductor wafer;
an unloading unit for receiving the clean and dry polished semiconductor wafer; and
at least one robot for transferring the semiconductor wafer after said loading unit receives the semiconductor wafer and before said unloading unit receives the clean and dry polished semiconductor wafer.
2. An apparatus as claimed in claim 1, wherein said loading unit and said unloading unit are separate.
3. An apparatus as claimed in claim 1, wherein said loading unit and said unloading unit are integrated into a single unit.
4. An apparatus as claimed in claim 1, wherein said washing system includes plural washing stations operable to achieve plural washing operations.
5. An apparatus as claimed in claim 4, wherein said plural washing operations include a primary washing operation and a secondary washing operation.
6. An apparatus as claimed in claim 1, further comprising a rinsing device for rinsing the polished semiconductor wafer at a first position that is upstream of and separate from a second position at which is located said primary washing station.
7. An apparatus as claimed in claim 1, wherein said clean and dry polished semiconductor wafer is transferred with at least one first mechanism that is discrete from at least one second mechanism employed to transfer said polished semiconductor wafer.
8. An apparatus as claimed in claim 7, wherein said at least one robot comprises a first robot comprising said at least one first mechanism and a second robot comprising said at least one second mechanism.
9. An apparatus as claimed in claim 1, wherein said drying system comprises a spin-dryer.
10. An apparatus as claimed in claim 1, wherein said enclosing structure is a housing.
11. An apparatus for polishing and then washing a semiconductor wafer, said apparatus comprising:
a housing adapted for installation in a clean room;
a loading unit for receipt of a semiconductor wafer to be polished;
a polishing system within said housing for polishing the semiconductor wafer to form a polished semiconductor wafer;
a washing system within said housing for washing the polished semiconductor wafer to form a clean polished semiconductor wafer, said washing system including plural washing stations operable to achieve plural washing operations;
a spin-dryer within said housing for spin-drying the clean polished semiconductor wafer to form a clean and dry polished semiconductor wafer; and
an unloading unit for receiving the clean and dry polished semiconductor wafer.
12. An apparatus as claimed in claim 11, wherein said loading unit and said unloading unit are separate.
13. An apparatus as claimed in claim 11, wherein said loading unit and said unloading unit are integrated into a single unit.
14. An apparatus as claimed in claim 11, wherein said plural washing operations include a primary washing operation and a secondary washing operation.
15. An apparatus as claimed in claim 11, further comprising a rinsing device for rinsing the polished semiconductor wafer at a first position that is upstream of and separate from a second position at which is located said primary washing station.
16. An apparatus as claimed in claim 11, wherein said clean and dry polished semiconductor wafer is transferred with at least one first mechanism that is discrete from at least one second mechanism employed to transfer said polished semiconductor wafer.
17. An apparatus as claimed in claim 16, wherein said at least one first mechanism comprises a first robot and said at least one second mechanism comprises a second robot.
18. A method for manufacturing a semiconductor device using a semiconductor wafer, said method comprising:
introducing the semiconductor wafer from the interior of a clean room into an enclosing structure installed in said clean room;
chemical mechanical polishing said semiconductor wafer to form a polished semiconductor wafer;
washing said polished semiconductor wafer to form a clean polished semiconductor wafer;
spin-drying said clean polished semiconductor wafer to form a clean and dry polished semiconductor wafer; and
removing said clean and dry polished semiconductor wafer from said enclosing structure to said interior of said clean room.
19. A method as claimed in claim 18, wherein said polishing comprises conducting plural polishing operations by plural polishing tables.
20. A method as claimed in claim 19, wherein said plural polishing operations comprise plural sequential polishing operations conducted on said semiconductor wafer by said plural polishing tables.
21. A method as claimed in claim 18, wherein said washing comprises conducting plural washing operations.
22. A method as claimed in claim 21, wherein said plural washing operations include a primary washing operation and a secondary washing operation.
23. A method as claimed in claim 18, further comprising rinsing said polished semiconductor wafer before said washing.
24. A method as claimed in claim 23, comprising conducting said rinsing at a first position and then conducting said washing at a second position different from said first position.
25. A method as claimed in claim 18, comprising transferring said clean and dry polished semiconductor wafer with at least one first mechanism that is discrete from at least one second mechanism employed to transfer said polished semiconductor wafer.
26. An apparatus as claimed in claim 25, wherein said at least one first mechanism comprises a first robot and said at least one second mechanism comprises a second robot.
27. A method as claimed in claim 18, wherein said washing and spin-drying are carried out at a washing and drying station in a washing unit.
28. A method as claimed in claim 18, wherein said washing and spin-drying are carried out at a washing station and a drying station which are separately provided.
29. A method as claimed in claim 18, wherein said polishing is conducted by a polishing apparatus including a top ring for holding said semiconductor wafer, and further comprising washing said top ring after releasing said polished semiconductor wafer.
30. A method as claimed in claim 18, further comprising inverting said semiconductor wafer before said polishing.
31. A method as claimed in claim 30, further comprising inverting said polished semiconductor wafer after said polishing and before said clean and dry polished semiconductor wafer is removed from said enclosing structure.
32. A method as claimed in claim 18, wherein said semiconductor wafer is taken out from a first container on a loading unit containing semiconductor wafers to be polished, and said clean and dry polished semiconductor wafer is put into a second container at an unloading unit.
33. A method as claimed in claim 18, wherein said semiconductor wafer is taken out from a container on a loading unit containing semiconductor wafers to be polished, and said clean and dry polished semiconductor wafer is returned into said container.
34. A method for manufacturing a semiconductor device using a semiconductor wafer, said method comprising:
introducing the semiconductor wafer from the interior of a clean room into a housing installed in said clean room;
polishing said semiconductor wafer to form a polished semiconductor wafer;
washing said polished semiconductor wafer at plural washing operations to form a clean polished semiconductor wafer;
spin-drying said clean polished semiconductor wafer to form a clean and dry polished semiconductor wafer; and
removing said clean and dry polished semiconductor wafer from said housing to said interior of said clean room.
35. A method as claimed in claim 34, wherein said plural washing operations include a primary washing operation and a secondary washing operation.
36. A method as claimed in claim 34, further comprising rinsing or washing said polished semiconductor wafer before said washing.
37. A method as claimed in claim 34, comprising transferring said clean and dry polished semiconductor wafer with at least one first mechanism that is discrete from at least one second mechanism employed to transfer said polished semiconductor wafer.
38. A method as claimed in claim 37, wherein said at least one first mechanism comprises a first robot and said at least one second mechanism comprises a second robot.
39. An apparatus for polishing and then washing a semiconductor wafer, said apparatus comprising:
an enclosing structure capable of containing and preventing an atmosphere within said enclosing structure from escaping therefrom to exterior thereof;
a loading unit for receipt of a semiconductor wafer to be polished;
a polishing system within said enclosing structure for polishing the semiconductor wafer to form a polished semiconductor wafer;
a washing system within said enclosing structure for washing the polished semiconductor wafer to form a clean polished semiconductor wafer,
said washing system including plural washing stations operable to achieve plural washing operations and a transfer robot for transferring said polished semiconductor wafer from a preceding washing station to a subsequent washing station in said washing stations;
a spin-dryer within said enclosing structure for spin-drying the clean polished semiconductor wafer to form a clean and dry polished semiconductor wafer; and
an unloading unit for receiving the clean and dry polished semiconductor wafer.
40. An apparatus as claimed in claim 39, wherein said loading unit and said unloading unit are separate.
41. An apparatus as claimed in claim 39, wherein said loading unit and said unloading unit are integrated into a single unit.
42. An apparatus as claimed in claim 39, wherein said plural washing operations include a primary washing operation and a secondary washing operation.
43. An apparatus as claimed in clam 39, further comprising a rinsing device for rinsing the polished semiconductor wafer at a first position that is upstream of and separate from a second position at which is located said preceding washing station.
44. An apparatus as claimed in claim 39, wherein said clean and dry polished semiconductor wafer is transferred with at least one first mechanism that is discrete from at least one second mechanism employed to transfer said polished semiconductor wafer.
45. An apparatus as claimed in claim 44, wherein said at least one robot comprises a first robot comprising said at least one first mechanism and a second robot comprising said at least one second mechanism.
46. An apparatus as claimed in claim 39, wherein said enclosing structure is a housing.
47. An apparatus for polishing and then washing a semiconductor wafer, said apparatus comprising:
an enclosing structure capable of containing and preventing an atmosphere within said enclosing structure from escaping therefrom to exterior thereof;
a loading unit for receipt of a semiconductor wafer to be polished;
a polishing system within said enclosing structure for polishing the semiconductor wafer to form a polished semiconductor wafer;
a washing system within said enclosing structure for washing the polished semiconductor wafer to form a clean polished semiconductor wafer;
a drying system within said enclosing structure for drying the clean polished semiconductor wafer to form a clean and dry polished semiconductor wafer;
an unloading unit for receiving the clean and dry polished semiconductor wafer; and
at least two robots for transferring the semiconductor wafer after said loading unit receives the semiconductor wafer before said unloading unit receives the clean and dry polished semiconductor wafer, one of said at least two robots being operable to transfer a wet polished semiconductor wafer, and the other of said at least two robots being operable to transfer a dry semiconductor wafer.
48. An apparatus as claimed in claim 47, wherein said washing system includes plural washing stations operable to achieve plural washing operations.
49. An apparatus as claimed in claim 48, wherein said plural washing operations include a primary washing operation and a secondary washing operation.
50. An apparatus as claimed in claim 47, further comprising a rinsing device for rinsing the polished semiconductor wafer at a first position that is upstream of and separate from a second position at which is located a primary washing station.
51. An apparatus as claimed in claim 47, wherein said drying system comprises a spin-dryer.
52. An apparatus as claimed in claim 47, wherein said enclosing structure is a housing.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A compound of formula I:
or a stereoisomer or pharmaceutically acceptable salt form thereof, wherein;
A is selected from CO2H, CH2CO2H, \u2014CO2R6, \u2014CONHOH, and \u2014CONHOR5, \u2014CONHOR6;
ring B is a 5 membered non-aromatic carbocycle;
ring C forms a spiro ring on Ring B and is a 5 membered heterocycle comprising: carbon atoms, 0-1 carbonyl groups, 0-1 double bonds, and 1 ring heteroatoms selected from O, N, NR2, and S(O)p and substituted with 0-6 Re;
Z is phenyl substituted with 0-4Rb;
Ua is absent or is O;
Xa is absent or is C1-3 alkylene;
Ya is absent;
Za is substituted with 0-5 Rc and selected from the group: benzoimidazolyl, indolyl, benzothiazin-4-yl, 1,1-dioxido-2,3-dihydro-4H-1,4-benzothiazin-4-yl,1,1-dioxido-3,4-dihydro-2H-1-benzothiopyran-4-yl, 3,4-dihydro-2H-chromen-4-yl, 2H-chromen-4-yl, and benzofuranyl;
R1 is selected from H, C1-4 alkyl, phenyl, and benzyl;
R2 is selected from Q, Cl, F, (C1-10 alkylene substituted with 0-3 Rb1)-Q, (C2-10 alkenylene substituted with 0-3 Rb1)-Q, (C2-10 alkynylene substituted with 0-3 Rb1)-Q, (CRaRa1)r1O(CRaRa1)r-Q, (CRaRa1)r1NRa(CRaRa1)r-Q, (CRaRa1)r1C(O)O(CRaRa1)r-Q, (CRaRa1)r1C(O)O(CRaRa1)r-Q, (CRaRa1)r1C(O)O\u2014C2-5 alkenylene, (CRaRa1)r1C(O)O\u2014C2-5 alkynylene, (CRaRa1)r1OC(O)(CRaRa1)r-Q, (CRaRa1)r1C(O)NRaRa1, (CRaRa1)r1C(O)NRa(CRaRa1 )r-Q, (CRaRa1)r1NRaC(O)(CRaRa1)r-Q, (CRaRa1)r1OC(O)O(CRaRa1)r-Q, (CRaRa1)r1OC(O)NRa(CRaRa1)r-Q, (CRaRa1)r1NRaC(O)O(CRaRa1)r-Q, (CRaRa1)r1NRaC(O)NRa(CRaRa1)r-Q, (CRaRa1)r1S(O)p(CRaRa1)r-Q, (CRaRa1)r1SO2NRa(CRaRa1)r1-Q, (CRaRa1)r1NRaSO2(CRaRa1)r-Q and (CRaRa1)r1NRaSO2NRa(CRaRa1)r-Q;
R2a is selected from H, C1-6 alkyl, ORa, NRaRa1, and S(O)pRa;
R2b is H or C1-6 alkyl;
Q is selected from H and a C3-13 carbocycle substituted with 0-5 Rd;
R3 is selected from Q1, Cl, F, C1-6 alkylene-Q1, C2-6 alkynylene-Q1, (CRaRa1)r1O(CRaRa1)r-Q1, (CRaRa1)r1NRa(CRaRa1)r-Q1, (CRaRa1)r1NRaC(O)(CRaRa1)r-Q1, (CRaRa1)r1C(O)NRa(CRaRa1)r-Q1, (CRaRa1)r1C(O)(CRaRa1)r-Q1, (CRaRa1)r1C(O)O(CRaRa1)r-Q1, (CRaRa12)r1S(O)p(CRaRa1)r-Q1, and (CRaRa1)r1SO2NRa(CRaRa1)r-Q1;
Q1 is selected from H, phenyl substituted with 0-3 Rd, and naphthyl substituted with 0-3 Rd;
Ra, at each occurrence, is independently selected from H, C1-4 alkyl, phenyl and benzyl;
Ra1, at each occurrence, is independently selected from H and C1-4 alkyl;
Ra2, at each occurrence, is independently selected from C1-4 alkyl, phenyl and benzyl;
Rb, at each occurrence, is independently selected from C1-6 alkyl, ORa, Cl, F, Br, I, \u2550O, \u2014CN, NO2, NRaRa1, C(O)Ra, C(O)ORa, C(O)NRaRa1, RaNC(O)NRaRa1, OC(O)NRaRa1, RaNC(O)ORa, S(O)2NRaRa1, NRaS(O)2Ra2, NRaS(O)2NRaRa1, OS(O)2NRaRa1, NRaS(O)2Ra2, S(O)pRa2, CF3, and CF2CF3;
Rb1, at each occurrence, is independently selected from ORa, Cl, F, Br, I, \u2550O, \u2014CN, NO2, and NRaRa1;
Rc, at each occurrence, is independently selected from C1-6 alkyl, ORa, Cl, F, Br, I, \u2550O, \u2014CN, NO2, NRaRa1, C(O)Ra, C(O)ORa, C(O)NRaRa1, RaNC(O)NRaRa1, OC(O)NRaRa1, RaNC(O)ORa, S(O)2NRaRa1, NRaS(O)2Ra2, NRaS(O)2NRaRa1, OS(O)2NRaRa1, NRaS(O)2Ra2, S(O)pRa2, CF3, CF2CF3, CH2F, CHF2, CF2CH3, C(CH3)2F, OCF3, and C3-10 carbocycle substituted with 0-3 Rc1;
Rc1, at each occurrence, is independently selected from C1-6 alkyl, ORa, Cl, F, Br, I, \u2550O, \u2014CN, NO2, NRaRa1, C(O)Ra,C(O)ORa, C(O)NRaRa1, RaNC(O)NRaRa1, OC(O)NRaRa1, RaNC(O)ORa, S(O)2NRaRa1, NRaS(O)2Ra2, NRaS(O)2NRaRa1, OS(O)2NRaRa1, NRaS(O)2Ra2, S(O)pRa2, CF3, CF2CF3, CH2F, and CHF2;
Rd, at each occurrence, is independently selected from C1-6 alkyl, ORa, Cl, F, Br, I, \u2550O, \u2014CN, NO2, NRaRa1, C(O)Ra, C(O)ORa, C(O)NRaRa1, RaNC(O)NRaRa1, OC(O)NRaRa1, RaNC(O)ORa, S(O)2NRaRa1, NRaS(O)2Ra2, NRaS(O)2NRaRa1, OS(O)2NRaRa1, NRaS(O)2Ra2, S(O)pRa2, CF3, CF2CF3, and C3-10 carbocycle;
Re, at each occurrence, is independently selected from C1-6 alkyl, ORa, Cl, F, Br, I, \u2550O, \u2014CN, NO2, NRaRa1, C(O)Ra, C(O)ORa, C(O)NRaRa1, RaNC(O)NRaRa1, OC(O)NRaRa1, RaNC(O)ORa, S(O)2NRaRa1, NRaS(O)2Ra2, NRaS(O)2NRaRa1, OS(O)2NRaRa1, NRaS(O)2Ra2, S(O)pRa2, CF3, CF2CF3, C3-10 carbocycle substituted with 0-2 Rc1, and (CRaRa1)r1-C3-10 carbocycle substituted with 0-2 Rc1;
R5, at each occurrence, is selected from C1-10 alkyl substituted with 0-2 Rb, and C1-8 alkyl substituted with 0-2 Rf;
Rf, at each occurrence, is selected from phenyl substituted with 0-2 Rb and biphenyl substituted with 0-2 Rb;
R6, at each occurrence, is selected from phenyl, naphthyl, C1-10 alkyl-phenyl-C1-6 alkyl-, C3-11 cycloalkyl, C1-6 alkylcarbonyloxy-C1-3 alkyl-, C1-6 alkoxycarbonyloxy-C1-3 alkyl-, C2-10 alkoxycarbonyl, C3-6 cycloalkylcarbonyloxy-C1-3 alkyl-, C3-6 cycloalkoxycarbonyloxy-C1-3 alkyl-, C3-6 cycloalkoxycarbonyl, phenoxycarbonyl, phenyloxycarbonyloxy-C1-3 alkyl-, phenylcarbonyloxy-C1-3 alkyl-, C1-6 alkoxy-C1-6 alkylcarbonyloxy-C1-3 alkyl-, 5-(C1-C5 alkyl)-1,3-dioxa-cyclopenten-2-one-ylmethyl, 5-(Ra)-1,3-dioxa-cyclopenten-2-one-ylmethyl, (5-aryl-1,3-dioxa-cyclopenten-2-one-yl)methyl, \u2014C1-10 alkyl-NR7R7a, \u2014CH(R8)OC(\u2550O)R9, and \u2014CH(R8)OC(\u2550O)OR9;
R7 is selected from H and C1-10 alkyl, C2-6 alkenyl, C3-6 cycloalkyl-C1-3 alkyl-, and phenyl-C1-6 alkyl-;
R7ais selected from H and C1-10 alkyl, C2-6 alkenyl, C3-6 cycloalkyl-C1-3 alkyl-, and phenyl-C1-6 alkyl-;
R8 is selected from H and C1-4 linear alkyl;
R9 is selected from H, C1-8 alkyl substituted with 1-2 Rg, C3-8 cycloalkyl substituted with 1-2 Rg, and phenyl substituted with 0-2 Rb;
Rg, at each occurrence, is selected from C1-4 alkyl, C3-8 cycloalkyl, C1-5 alkoxy, and phenyl substituted with 0-2 Rb;
p, at each occurrence, is selected from 0, 1, and 2;
r, at each occurrence, is selected from 0, 1, 2, 3, and 4; and,
r1, at each occurrence, is selected from 0, 1, 2, 3, and 4.
2. A compound according to claim 1, wherein the compound is of formula II:
or a stereoisomer or pharmaceutically acceptable salt form thereof, wherein;
Z is phenyl substituted with 0-3 Rb;
R2 is selected from Q, C1-6 alkylene-Q, C2-6 alkenylene-Q, C2-6 alkynylene-Q, (CRaRa1)r1O(CRaRa1)r-Q, (CRaRa1)r1NRa(CRaRa1)r-Q, (CRaRa1)r1C(O)(CRaRa1)r-Q, (CRaRa1)r1C(O)O(CRaRa1)r-Q, (CRaRa1)rC(O)NRaRa1, (CRaRa1)r1C(O)NRa(CRaRa1)r-Q, (CRaRa1)r1S(O)p(CRaRa1)r-Q, and (CRaRa1)r1SO2NRa(CRaRa1)r-Q;
Q is selected from H, and a C3-6 carbocycle substituted with 0-5 Rd;
Rb, at each occurrence, is independently selected from C1-6 alkyl, ORa, Cl, F, Br, \u2550O, \u2014CN, NRaRa1, C(O)Ra, C(O)ORa, C(O)NRaRa1, S(O)2NRaRa1, S(O)pRa2, and CF3;
Rc, at each occurrence, is independently selected from C1-6 alkyl, ORa, Cl, F, Br, \u2550O, \u2014CN, NRaRa1, C(O)Ra, C(O)ORa, C(O)NRaRa1, S(O)2NRaRa1, S(O)pRa2, CF3, CH2FCHF2, CF2CH3, C(CH3)2F, OCF3, C3-6 carbocycle substituted with 0-2 Rc1;
Rc1, at each occurrence, is independently selected from C1-6 alkyl, ORa, Cl, F, Br, I, \u2550O, \u2014CN, NO2, NRaRa1, C(O)Ra, C(O)ORa, C(O)NRaRa1, RaNC(O)NRaRa1, OC(O)NRaRa1, RaNC(O)ORa, S(O)2NRaRa1, NRaS(O)2Ra2, NRaS(O)2NRaRa1, OS(O)2NRaRa1, NRaS(O)2Ra2, S(O)pRa2, CF3, CF2CF3, CH2F, and CHF2;
Rd, at each occurrence, is independently selected from C1-6 alkyl, ORa, Cl, F, Br, \u2550O, \u2014CN, NRaRa1, C(O)Ra, C(O)ORa, C(O)NRaRa1, S(O)2NRaRa1, S(O)pRa2, CF3, and C3-6 carbocycle;
R7 is selected from H and C1-6 alkyl, C2-6 alkenyl, C3-6 cycloalkyl-C1-3 alkyl-, and phenyl-C1-6 alkyl-;
R7ais selected from H and C1-6 alkyl, C2-6 alkenyl, C3-6 cycloalkyl-C1-3 alkyl-, and phenyl-C1-6 alkyl-;
R9 is selected from H, C1-6 alkyl substituted with 1-2 Rg, C3-6 cycloalkyl substituted with 1-2 Rg, and phenyl substituted with 0-2 Rb; and
Rg, at each occurrence, is selected from C1-4 alkyl, C3-6 cycloalkyl, C1-5 alkoxy, and phenyl substituted with 0-2 Rb.
3. A compound according to claim 2, wherein the compound is of formula IIIa or IIIb:
or a stereoisomer or pharmaceutically acceptable salt form thereof, wherein;
A is selected from \u2014CO2H, CH2CO2H, \u2014CONHOH, \u2014CONHOR5, \u2014N(OH)CHO, and \u2014N(OH)COR5;
R2 is selected from Q, C1-6 alkylene-Q, C2-6 alkenylene-Q, C2-6 alkynylene-Q, (CRaRa1)rC(O)(CRaRa1)r-Q, (CRaRa1)r1C(O)O(CRaRa1)r-Q, (CRaRa2)r1C(O)NRaRa1, (CRaRa2)r1C(O)NRa(CRaRa1)r-Q, and (CRaRa1)r1S(O)p(CRaRa1)r-Q;
Q is selected from H a C3-6 carbocycle substituted with 0-3 Rd;
Rb, at each occurrence, is independently selected from C1-4 alkyl, ORa, Cl, F, \u2550O, NRaRa1, C(O)Ra, C(O)ORa, C(O)NRaRa1, S(O)2NRaRa1, S(O)pRa2, and CF3;
Rc, at each occurrence, is independently selected from C1-6 alkyl, ORa, Cl, F, Br, \u2550O, NRaRa1, C(O)Ra, C(O)NRaRa1, S(O)2NRaRa1, S(O)pRa2, CF3, CH2F, CHF2, CF2CH3, C(CH3)2F, cyclopropyl, 1-methylcyclopropyl, and cyclobutyl;
Rd, at each occurrence, is independently selected from C1-6 alkyl, ORa, Cl, F, Br, \u2550O, NRaRa1, C(O)Ra, C(O)NRaRa1, S(O)2NRaRa1, S(O)pRa2, CF3, and phenyl;
R5, at each occurrence, is selected from C1-4 alkyl substituted with 0-2 Rb, and C1-4 alkyl substituted with 0-2 Rf;
s and s1 combine to total 2; and
s2 and s3 combine to total 3.
4. A compound according to claim 3, wherein the compound is of formula IVa or IVb:
or a stereoisomer or pharmaceutically acceptable salt form thereof, wherein;
Xa is absent or is CH2 or CH2CH2;
Za is substituted with 0-3 Rc and selected from the group: benzimidazolyl, indolyl, 1,1-dioxido-2,3-dihydro-4H-1,4-benzothiazin-4-yl, 1,1-dioxido-3,4-dihydro-2H-1-benzothiopyran-4-yl, 3,4-dihydro-2H-chromen-4-yl, 2H-chromen-4-yl;
R1 is selected from H, CH3, and CH2CH3;
R2 is selected from Q, C1-6 alkylene-Q, C2-6 alkynylene-Q, C(O)(CRaRa1)r-Q, C(O)O(CRaRa1)r-Q, C(O)NRa(CRaRa1)r-Q, and S(O)p(CRaRa1)r-Q;
Q is selected from H, cyclopropyl substituted with 0-1 Rd, cyclobutyl substituted with 0-1 Rd, cyclopentyl substituted with 0-1 Rd, cyclohexyl substituted with 0-1 Rd, and phenyl substituted with 0-2 Rd ;
Ra, at each occurrence, is independently selected from H, CH3, and CH2CH3;
Ra1, at each occurrence, is independently selected from H, CH3, and CH2CH3;
Ra2, at each occurrence, is independently selected from H, CH3, and CH2CH3;
p, at each occurrence, is selected from 0, 1, and 2;
r, at each occurrence, is selected from 0, 1, 2, and 3;
r1, at each occurrence, is selected from 0, 1, 2, and 3;
s and s1 combine to total 2; and
s2 and s3 combine to total 3.
5. A compound according to claim 4, wherein the compound is of formula IVa or IVb, wherein;
Z is phenyl;
Za is substituted with 0-2 Rc and for the group: 1H-benzimidazol-1-yl, 1H-indol-1-yl, 1H-indol-3-yl, and 1,1-dioxido-2,3-dihydro-4H-1,4-benzothiazin-4-yl;
R1 is H;
Rc, at each occurrence, is independently selected from methyl, ethyl, propyl, isopropyl, butyl, t-butyl, CF3, CHF2, CH2F, CF2CH3, C(CH3)2F, NH2, NH(CH3), N(CH3)2, cyclopropyl, 1-methylcyclopropyl, and cyclobutyl.
6. A compound according to claim 1, wherein the compound is selected from the group:
(5R,7S,8R)-N-hydroxy-8-({4-(2-methyl-1H-benzimidazol-1-yl)methylbenzoyl}amino)-1-oxaspiro4.4nonane-7-carboxamide;
(5R,7S,8R)-N-hydroxy-8-({4-(2-isopropyl-1H-benzimidazol-1-yl)methylbenzoyl}amino)-1-oxaspiro4.4nonane-7carboxamide;
(5R,7S,8R)-N-hydroxy-8-(4-{2-(trifluoromethyl-1H-benzimidazol-1-ylmethyl}benzoyl)amino-1-oxaspiro4.4nonane-7-carboxamide;
(5R,7R,8-({4-(2-tert-butyl-1H-benzimidazol-1-yl)methyl-benzyl}amino)-N-hydroxy-1-oxaspiro4.4nonane-7carboxamide;
(5R,7S,8R)-N-hydroxy-8-({4-(2-methyl-1H-indol-3yl)methylbenzoyl}amino)1-oxaspiro4.4nonane-7-carboxamide;
(5R,7S,8R)-8-(4-{(2-difluoromethyl)-1H-benzimidazol-1-ylmethyl}benzoyl)amino-N-hydroxy-1-oxaspiro4.4nonane-7carboamide;
(5R,7S,8R)-8-({4-(2-cyclopropyl-1H-benzimidazol-1-yl)methylbenzoyl}amino)-N-hydroxy-1-oxaspiro4.4nonane-7-carboamide;
(5R,7S,8R)-8-({4-(2-cyclobutyl-1H-benzimidazol-1-yl)methylbenzoyl}amino)-N-hydroxy-1-oxaspiro4.4nonane-7-carboxamide;
(5R,7S,8R)-N-hydroxy-8-({4-(2-methyl-1H-indol-1-yl)methylbenzoyl}amino)-1-oxaspiro4.4nonane-7-carboxamide;
(5R,7S,8R)-N-hydroxy-8-(4-{2-(1-methylcyclopropyl)-1H-benzimidazol-1-ylmethyl}benzoyl)amino-1-oxaspiro4.4nonane-7-carboxamide;
(5R,7S,8R)-8-(4-{2-(fluoromethyl)-1H-benzimidazol-1ylmethyl}benzoyl)amino-N-hydroxy-1-oxaspiro4.4nonane-7-carboxamide;
(5R,7S,8R)-8-(4-{2-(1-fluoro-1-methylethyl)-1H-benzimidazol-1-ylmethyl}benzoyl)amino-N-hydroxy-1-oxaspiro4.4nonane-7carboxamide;
(5R,7S,8R)-N-hydroxy-8-{4-(1H-indol-3-ylmethyl)benzoylamino}-1-oxaspiro4.4nonane-7-carboxamide;
(5R,7S,8R)-8-(4-{(2-(1,1-difluoroethyl)-1H-benzimidazol-1-ylmethyl}benzoyl)amino-N-hydroxy-1-oxaspiro4.4nonane-7-carboxamide;
(5R,7S,8R)-8-({4-(2,3-dimethyl-1H-indol-1-yl)methylbenzoyl}amino)-N-hydroxy-1-oxaspiro4.4nonane-7-carboxamide;
(5R,7S,8R)-N-hydroxy-8-(4-{2-(trifluoromethyl)-1H-indol-1-ylmethyl}benzoyl)amino-1-oxaspiro4.4nonane-7-carboxamide;
(5R,7S,8R)-8-{(4-(1,1-dioxido-3,4-dihydro-2H-1benzothiopyran-4-yl)benzoylamino}-N-hydroxy-1oxaspiro4.4nonane-7-carboxamide;
(5R,7S,8R)-8-{4-(3,4-dihydro-2H-chromen-4yl)benzoylamino}-N-hydroxy-1-oxaspiro4.4nonane-7-carboxamide;
(5R,7S,8R)-8-{4-(2H-chromen-4-yl)benzoylamino}-N-hydroxy-1-oxaspiro4.4nonane-7-carboxamide;
(5R,7S,8R)-8-({4-(1,1-dioxido-2,3-dihydro-4H-1,4-benzothiazin-4-yl)methylbenzoyl}amino)-N-hydroxy-1oxaspiro4.4nonane-7-carboxamide;
(5R,7S,8R)-8-({4-(2,2-dimethyl-1,1-dioxido-2,3-dihydro-4H-1,4-benzothiazin-4-yl)methylbenzoyl}amino)-N-hydroxy-1-oxaspiro4.4nonane-7-carboxamide;
or a pharmaceutically acceptable salt from thereof.
7. A pharmaceutical composition, comprising: a pharmaceutically acceptable carrier and a therapeutically effective amount of a compound according to claim 1 or a pharmaceutically acceptable salt form thereof.
8. A method of treating an inflammatory disorder, comprising: administering to a patient in need thereof a therapeutically effective amount of a compound according to claim 1 or a pharmaceutically acceptable salt form thereof.
9. A method of treating a disease or condition by administering to a patient in need thereof a therapeutically effective amount of a compound according to claim 1 or a pharmaceutically acceptable salt form thereof, wherein the disease or condition is selected from Crohn’s disease, psoriasis, psoriatic arthritis, rheumatoid arthritis, and spondylitis.
10. A pharmaceutical composition, comprising: a pharmaceutically acceptable carrier and a therapeutically effective amount of a compound according to claim 2 or a pharmaceutically acceptable salt form thereof.
11. A method of treating an inflammatory disorder, comprising: administering to a patient in need thereof a therapeutically effective amount of a compound according to claim 2 or a pharmaceutically acceptable salt form thereof.
12. A pharmaceutical composition, comprising: a pharmaceutically acceptable carrier and a therapeutically effective amount of a compound according to claim 3 or a pharmaceutically acceptable salt form thereof.
13. A method of treating an inflammatory disorder, comprising: administering to a patient in need thereof a therapeutically effective amount of a compound according to claim 3 or a pharmaceutically acceptable salt form thereof.
14. A pharmaceutical composition, comprising: a pharmaceutically acceptable carrier and a therapeutically effective amount of a compound according to claim 4 or a pharmaceutically acceptable salt form thereof.
15. A method of treating an inflammatory disorder, comprising: administering to a patient in need thereof a therapeutically effective amount of a compound according to claim 4 or a pharmaceutically acceptable salt form thereof.
16. A pharmaceutical composition, comprising: a pharmaceutically acceptable carrier and a therapeutically effective amount of a compound according to claim 5 or a pharmaceutically acceptable salt form thereof.
17. A method of treating an inflammatory disorder, comprising: administering to a patient in need thereof a therapeutically effective amount of a compound according to claim 5 or a pharmaceutically acceptable salt form thereof.
18. A pharmaceutical composition, comprising: a pharmaceutically acceptable carrier and a therapeutically effective amount of a compound according to claim 6 or a pharmaceutically acceptable salt form thereof.
19. A method of treating an inflammatory disorder, comprising: administering to a patient in need thereof a therapeutically effective amount of a compound according to claim 6 or a pharmaceutically acceptable salt form thereof.