1. A wafer level packaging method comprising:
providing a wafer including a plurality of bumps disposed on a surface of the wafer;
placing a dielectric tape on a mold plate;
laminating the wafer and the mold plate to make the dielectric tape be compliantly bonded to the surface of the wafer and the bumps be embedded in the dielectric tape;
removing the mold plate; and
flattening the dielectric tape to form a plurality of exposed surfaces of the bumps wherein the exposed surfaces of the bumps and the flattened surface of the dielectric tape are coplanar.
2. The method as claimed in claim 1, wherein the mold plate has a plurality of holes to accommodate the individual bumps.
3. The method as claimed in claim 2, wherein the holes penetrate through the mold plate.
4. The method as claimed in claim 2, wherein the bumps with a plurality of extruded tips penetrate through the dielectric tape and the extruded tips are accommodated in the holes during the laminating step.
5. The method as claimed in claim 4, wherein the extruded tips are leveled during the flattening step.
6. The method as claimed in claim 4, wherein the bumps during the laminating step have a height greater than the thickness of the dielectric tape but smaller than the total thickness of the thickness of the dielectric tape plus the depth of the corresponding holes.
7. The method as claimed in claim 1, wherein the surface of the wafer covered by the dielectric tape is an active surface.
8. The method as claimed in claim 7, wherein the exposed surfaces of the bumps include a plurality of alignment marks for a wafer sawing process.
9. The method as claimed in claim 8, wherein the wafer comprises a plurality of dies and a plurality of incomplete edge dies where the bumps are disposed on the incomplete edge dies.
10. The method as claimed in claim 9, wherein the wafer further comprises a plurality of extruded electrodes disposed on the dies, each extruded electrode having a conductive surface exposed from the dielectric tape after the flattening step.
11. The method as claimed in claim 8, wherein the wafer comprises a plurality of dies where the bumps are located within the dies.
12. The method as claimed in claim 11, wherein at least one bump is disposed on each die to form alignment points in rows and in columns for wafer sawing.
13. The method as claimed in claim 12, wherein the bump on each die is located at the center of the corresponding die where the bump is a dummy bump without any electrical function.
14. The method as claimed in claim 1, wherein the dielectric tape is in B-stage during the laminating step.
15. The method as claimed in claim 1, wherein the surface of the wafer covered by the dielectric tape is a back surface.
16. The method as claimed in claim 15, wherein the dielectric tape is a Die Attaching Material (DAM) to completely cover the surface.
17. The method as claimed in claim 1, wherein the dielectric tape is an encapsulation resin.
18. The method as claimed in claim 17, further comprising a curing step to cure the dielectric tape after removing the mold plate and before flattening the dielectric tape.
19. The method as claimed in claim 1, wherein the bumps are homogeneous.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for reducing an order of a discrete fractured network simulation, comprising:
receiving cells representing a portion of a subterranean formation that includes a fracture;
marking a first plurality of the cells that correspond to the fracture as a first cell level;
marking a second plurality of the cells that touch the first plurality of cells as a second cell level;
grouping the first plurality of cells into a first superelement;
grouping the second plurality of cells into a second superelement;
designating one of the first plurality of cells in the first superelement as a master cell;
updating a volume for the master cell to include volumes for each of the first plurality of cells in the first superelement; and
displaying the master cell after the volumes for each of the first plurality of cells in the first superelement have been included.
2. The method of claim 1, wherein grouping the second plurality of cells into the second superelement comprises grouping a first portion of the second plurality of cells into the second superelement, wherein the first portion of the second plurality of cells each share a face with the first superelement.
3. The method of claim 2, wherein grouping the second plurality of cells into the second superelement further comprises grouping a second portion of the second plurality of cells into the second superelement, wherein the second portion of the second plurality of cells each share a face with at least one of the cells in the first portion.
4. The method of claim 1, further comprising dividing the second superelement into first and second portions, and wherein at least one of the first and second portions has substantially the same characteristic length as the first superelement.
5. The method of claim 1, further comprising:
resolving a connectivity for one or more of the first plurality of cells in the first superelement using a Schur complement; and
removing connections between slave cells in the first superelement.
6. The method of claim 1, further comprising:
reclassifying a first plurality of superelements, including the first superelement, as first reclassified cells;
marking the first reclassified cells as a first reclassified cell level; and
grouping the first reclassified cells into a first reclassified superelement.
7. The method of claim 6, further comprising:
reclassifying a second plurality of superelements, including the second superelement, as second reclassified cells;
marking the second reclassified cells as a second reclassified cell level; and
grouping the second reclassified cells into a second reclassified superelement.
8. A non-transitory computer readable medium storing instructions thereon that, when executed by a processor, are configured to cause the processor to perform operations, the operations comprising:
receiving cells representing a portion of a subterranean formation that includes a fracture;
marking a first plurality of the cells that correspond to the fracture as a first cell level;
marking a second plurality of the cells that touch the first plurality of cells as a second cell level;
grouping the first plurality of cells into a first superelement;
grouping the second plurality of cells into a second superelement;
designating one of the first plurality of cells in the first superelement as a master cell;
updating a volume for the master cell to include volumes for each of the first plurality of cells in the first superelement; and
displaying the master cell after the volumes for each of the first plurality of cells in the first superelement have been included.
9. The computer readable medium of claim 8, wherein grouping the second plurality of cells into the second superelement comprises grouping a first portion of the second plurality of cells into the second superelement, wherein the first portion of the second plurality of cells each share a face with the first superelement.
10. The computer readable medium of claim 9, wherein grouping the second plurality of cells into the second superelement further comprises grouping a second portion of the second plurality of cells into the second superelement, wherein the second portion of the second plurality of cells each share a face with at least one of the cells in the first portion.
11. The computer readable medium of claim 8, the operations further comprising dividing the second superelement into first and second portions, and wherein at least one of the first and second portions has substantially the same characteristic length as the first superelement.
12. The computer readable medium of claim 8, further comprising:
resolving a connectivity for one or more of the first plurality of cells in the first superelement using a Schur complement; and
removing connections between slave cells in the first superelement.
13. The computer readable medium of claim 8, the operations further comprising:
reclassifying a first plurality of superelements, including the first superelement, as first reclassified cells;
marking the first reclassified cells as a first reclassified cell level; and
grouping the first reclassified cells into a first reclassified superelement.
14. The computer readable medium of claim 13, the operations further comprising:
reclassifying a second plurality of superelements, including the second superelement, as second reclassified cells;
marking the second reclassified cells as a second reclassified cell level; and
grouping the second reclassified cells into a second reclassified superelement.
15. A computing system, comprising:
a processor; and
a memory system comprising one or more computer readable media storing instructions thereon that, when executed by the processor, are configured to cause the computing system to perform operations, the operations comprising:
receiving cells representing a portion of a subterranean formation that includes a fracture;
marking a first plurality of the cells that correspond to the fracture as a first cell level;
marking a second plurality of the cells that touch the first plurality of cells as a second cell level;
grouping the first plurality of cells into a first superelement;
grouping the second plurality of cells into a second superelement;
designating one of the first plurality of cells in the first superelement as a master cell;
updating a volume for the master cell to include volumes for each of the first plurality of cells in the first superelement; and
displaying the master cell after the volumes for each of the first plurality of cells in the first superelement have been included.
16. The system of claim 15, wherein grouping the second plurality of cells into the second superelement comprises grouping a first portion of the second plurality of cells into the second superelement, wherein the first portion of the second plurality of cells each share a face with the first superelement.
17. The system of claim 16, wherein grouping the second plurality of cells into the second superelement further comprises grouping a second portion of the second plurality of cells into the second superelement, wherein the second portion of the second plurality of cells each share a face with at least one of the cells in the first portion.
18. The system of claim 15, the operations further comprising dividing the second superelement into first and second portions, and wherein at least one of the first and second portions has substantially the same characteristic length as the first superelement.
19. The system of claim 15, wherein updating the volume for the master cell to include volumes for each of the first plurality of cells in the first superelement is accomplished using a Schur complement.
20. The system of claim 15, the operations further comprising:
reclassifying a first plurality of superelements, including the first superelement, as first reclassified cells;
marking the first reclassified cells as a first reclassified cell level; and
grouping the first reclassified cells into a first reclassified superelement.