1. A method for processing a substrate, comprising:
performing an etch process on a substrate in a first chamber wherein the etch process comprises exposing one or more layers of a film stack to etchants comprising at least one halogen-containing gas;
after performing the etch process, transferring the substrate into a second chamber;
performing a treating process on the substrate in the second chamber, wherein the treating process comprises distributing a processing gas into the second chamber through a gas distribution plate and removing halogen-containing etch residues from the substrate;
transferring the substrate out of the second chamber; and
providing a purge gas into the second chamber during at least one of transferring the substrate into or out of the second chamber, wherein providing the purge gas comprises providing the purge gas through the gas distribution plate.
2. The method of claim 1, wherein providing the purge gas comprises:
providing nitrogen gas or an inert gas into the second chamber.
3. The method of claim 1, comprising:
providing purge gas into the second chamber before the substrate is transferred into the second chamber.
4. The method of claim 1, wherein the purge gas is provided into the second chamber from a time that process gas flow is terminated until process gas flow resumes.
5. The method of claim 1, wherein the purge gas is provided into the second chamber below the substrate support.
6. The method of claim 1, wherein the purge gas is provided at a flow rate of at least about 5000 sccm.
7. The method of claim 1, wherein the treating process comprises:
removing photoresist from the substrate.
8. The method of claim 1, wherein transferring the substrate out of the second chamber further comprises:
transferring the substrate to a factory interface.
9. A method for processing a substrate comprising:
performing an etch process on a substrate in an etch chamber wherein the etch process comprises exposing one or more layers of a film stack to etchants comprising at least one halogen-containing gas;
transferring the substrate into a first chamber of a chamber body, the chamber body having a second chamber;
performing a treating process on the substrate in the first chamber, wherein the treating process comprises distributing a processing gas into the first chamber through a gas distribution plate and removing halogen-containing etch residues from the substrate;
transferring the substrate out of the first chamber;
providing a purge gas into the first chamber during at least one of the transferring of the substrate into or out of the first chamber, wherein providing the purge gas comprises providing the purge gas through the gas distribution plate; and
transferring the substrate into the second chamber.
10. The method of claim 9, wherein providing the purge gas comprises providing the purge gas through the gas distribution plate and through a port positioned below the gas distribution plate.
11. The method of claim 9, wherein the purge gas is provided at a flow rate of at least about 5000 sccm.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An agent for removing at least one pollutant from a gas comprising a wax which has a drop melting point between 40 and 150\xb0 C., a melt viscosity of 2 to 20 000 mPas, and a needle penetration of 1 to 50 and which contains at least one alkoxylated compound.
2. The agent as claimed in claim 1, wherein the at least one pollutant is selected from the group consisting of nicotine, tobacco, combustion products, ozone and formaldehyde.
3. The agent as claimed in claim 1, wherein the wax contains 0.5 to 99.5% by weight of an alkoxylated montan acid as the alkoxylated compound.
4. The agent as claimed in claim 1, wherein the wax contains 0.5 to 99.5% by weight of an alkoxylate of an unbranched or branched, monohydric or polyhydric alcohol having 20 to 40 carbon atoms.
5. The agent as claimed in claim 1, wherein the wax contains 0.5 to 99.5% by weight of the water-soluble ethylene oxide-propylene oxide adduct to a monohydric or polyhydric alcohol having 1 to 40 carbon atoms.
6. The agent as claimed in claim 1, wherein the wax contains up to 30% by weight of alcohols which have 4 to 12 carbon atoms and 1, 2 or 3 OH groups.
7. A process for purifying a gas from at least one pollutant by adsorption, comprising the step of bringing the gas to be purified into contact with an agent according to claim 1.
8. A gas purification system comprising an agent according to claim 1.
9. A wax which has a drop melting point between 40 and 150\xb0 C., a melt viscosity of 2 to 20 000 mPas and a needle penetration of 1 to 50 comprising:
a) 0.5 to 99.5% by weight of an alkoxylated montan acid, and
b) 0.5 to 99.5% by weight of an alkoxylate of an unbranched or branched, monohydric or polyhydric alcohol having 20 to 40 carbon atoms.
10. The wax as claimed in claim 9, further comprising 0.5 to 99.5% by weight of a water-soluble ethylene oxide-propylene oxide adduct to a monohydric or polyhydric alcohol having 1 to 40 carbon atoms, or to water.
11. The wax as claimed in claim 9, further comprising up to 30% by weight of alcohols which have 4 to 12 carbon atoms and 1, 2 or 3 OH groups.
12. A process for purifying a gas from at least one pollutant by adsorption, comprising the step of bringing the gas to be purified into contact with a wax according to claim 9.
13. A gas purification system comprising a wax according to claim 9.