1. A method in a wireless communication device, said method comprising:
collecting radio events;
converting said radio events to timing control unit (TCU) instructions;
mapping each of said TCU instructions to a corresponding TCU output to be each executed at a given time; and
if two given TCU outputs are to be executed at consecutive times and are identical, said processor cancelling one of said TCU instructions.
2. The method of claim 1 wherein said wireless communication device is adapted for a Downlink Dual Carrier (DLDC), said wireless communication device comprising a processor, a single TCU and two or more radio devices.
3. The method of claim 2 wherein each of said radio devices comprises a receiver, and said two or more radio devices enable said wireless communication device to simultaneously receive data on two or more frequency channels.
4. The method of claim 2 wherein said TCU interfaces between said processor and said two or more radio devices.
5. The method of claim 2 wherein said TCU is configured to execute said TCU instructions one at a time to generate one or more commands to control at least one of said two or more radio devices.
6. The method of claim 2 wherein each of said two or more radio devices has a corresponding radio event list, and said corresponding radio events lists are collected by said processor.
7. The method of claim 1 wherein said radio events include any one of a digital signal processing radio queue command, a strobe, a front end module configuration change, a processor sleep mode entry, and a system clock calibration.
8. The method of claim 1 further comprising, after converting said radio events to said TCU instructions, sorting said TCU instructions from highest priority to lowest priority to form a sorted list.
9. The method of claim 8 further comprising, after cancelling said at least one of the TCU instructions, loading said sorted list onto said TCU.
10. The method of claim 8 wherein said TCU instructions are sorted from highest priority to lowest priority using any one of bubble sort, quicksort, shell sort, merge sort and bucket sort.
11. The method of claim 8 wherein a priority is dynamically assigned to each of said TCU instructions based on the availability of resources in said wireless communication device’s front end module.
12. The method of claim 1 occurring on Layer 1 of a networking model.
13. A computer readable medium comprising computer executable instructions that when executed by a processor at said wireless communication device perform the method according to claim 1.
14. A wireless communication device comprising a processor, said wireless communication device configured to:
collect radio events;
convert said radio events to timing control unit (TCU) instructions;
map each of said TCU instructions to a corresponding TCU output to be each executed at a given time; and
if two given TCU outputs are to be executed at consecutive times and are identical, said wireless device is configured to cancel one of the TCU instructions.
15. The wireless communication device of claim 14 wherein said wireless communication device is adapted for a Downlink Dual Carrier (DLDC), and further comprises a single TCU and two or more radio devices.
16. The wireless communication device of claim 15 wherein each of said radio devices comprises a receiver, and said two or more radio devices enable said wireless communication device to simultaneously receive data on two or more frequency channels.
17. The wireless communication device of claim 15 wherein said TCU interfaces between said processor and said two or more radio devices.
18. The wireless communication device of claim 15 wherein said TCU is configured to execute said TCU instructions one at a time to generate one or more commands to control at least one of said two or more radio devices.
19. The wireless communication device of claim 15 wherein each of said two or more radio devices has a corresponding radio event list, and said process is configured to collect said corresponding radio events lists.
20. The wireless communication device of claim 15 wherein said radio events include any one of a digital signal processing radio queue command, a strobe, a front end module configuration change, a processor sleep mode entry, and a system clock calibration.
21. The wireless communication device of claim 15 further configured to, after converting said radio events to said TCU instructions, sort said TCU instructions from highest priority to lowest priority to form a sorted list.
22. The wireless communication device of claim 21 further configured to, after cancelling said at least one of the TCU instructions, load said sorted list onto said TCU.
23. The wireless communication device of claim 21 wherein said TCU instructions are sorted from highest priority to lowest priority using any one of bubble sort, quicksort, shell sort, merge sort and bucket sort.
24. The wireless communication device of claim 21 wherein a priority is dynamically assigned to each of said TCU instructions based on the availability of resources in said wireless communication device’s front end module.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A semiconductor package comprising:
an interconnecting structure, wherein the interconnecting structure includes a redistribution layer (RDL);
a semiconductor die bonded to the interconnecting structure by a first plurality of bonding structures, wherein the RDL of the interconnecting layer enables fan-out connection of the semiconductor die; and
a package structure bonded to the interconnecting structure by a second plurality of bonding structures, wherein the semiconductor die is placed in a space between the package structure and the interconnecting structure.
2. The semiconductor package of claim 1, the interconnecting structure includes conductive structures surrounded by one or more dielectric layers.
3. The semiconductor package of claim 2, wherein the one of more dielectric layers are made of photo-sensitive polymers.
4. The semiconductor package of claim 1, wherein the interconnecting structure has a thickness equal to or less than about 30 \u03bcm.
5. The semiconductor package of claim 1, wherein a total thickness of the interconnecting structure and the package structure covered with a molding layer is in a range from about 350 \u03bcm to about 1050 \u03bcm.
6. The semiconductor package of claim 1, wherein a distance between a first surface of the package structure facing a second surface of the interconnecting structure and the second surface is in a range from about 100 \u03bcm to about 400 \u03bcm.
7. The semiconductor package of claim 1, wherein a plurality of connecting elements are bonded to the interconnecting structures on an opposite surface from the semiconductor die and the package structure.
8. The semiconductor package of claim 1, further comprising:
another semiconductor die adjacent to the semiconductor die, wherein the other semiconductor die is bonded to the interconnecting structure and is placed in a space between the package structure and the interconnecting structure.
9. The semiconductor package claim 1, wherein the package structure includes two or more semiconductor dies.
10. The semiconductor package of claim 1, wherein the interconnecting structure includes a first connector for forming a first bonding structure with the semiconductor die and a second connector for forming a second bonding structure with the package structure, wherein a first width of the first connector is smaller than a second width of the second connector.
11. The semiconductor package of claim 10, wherein the first connector and the second connector both include a barrier layer.
12. The semiconductor package of claim 10, wherein the first connector and the second connector both include a conductive layer.
13. The semiconductor package of claim 10, wherein the first width is in a range from about 20 \u03bcm to about 100 \u03bcm.
14. The semiconductor package of claim 10, wherein the second width is in a range from about 100 \u03bcm to about 400 \u03bcm.
15. A semiconductor package comprising:
an interconnecting structure, wherein the interconnecting structure include a redistribution layer (RDL), wherein the interconnecting structure has a thickness equal to or less than about 30 \u03bcm;
a semiconductor die bonded to the interconnecting structure by a first plurality of bonding structures, wherein the RDL of the interconnecting layer enables fan-out connection of the semiconductor die; and
a package structure bonded to the interconnecting structure by a second plurality of bonding structures, wherein the semiconductor die is placed in a space between the package structure and the interconnecting structure.
16-20. (canceled)
21. A semiconductor package comprising:
an interconnecting structure, wherein the interconnecting structure comprises a first redistribution layer (RDL);
a semiconductor die bonded to the first RDL by a first bonding structure having a first width; and
a package structure bonded to the first RDL by a second bonding structure having a second width different from the first width, wherein the package structure is on an opposite side of the semiconductor die from the interconnecting structure.
22. The semiconductor package of claim 21, wherein the interconnecting structure further comprising a second RDL separated from the first RDL, the semiconductor die is bonded to the second RDL by a third bonding structure having the first width, and the package structure is bonded to the second RDL by a fourth bonding structure having the second width.
23. The semiconductor package of claim 22, wherein the semiconductor die is located between the second bonding structure and the fourth bonding structure.
24. The semiconductor package of claim 21, further comprising a molding layer, wherein the molding layer surrounds the package structure and fills a space between the semiconductor die and the interconnecting structure.
25. The semiconductor package of claim 21, wherein an overall height of the semiconductor package ranges from about 350 microns (\u03bcm) to about 1050 \u03bcm.