1. A method for fabricating an electronic component, comprising:
forming a seed film above a base body;
cooling said seed film; and
putting the cooled seed film into a plating solution to perform electro-plating with said seed film being as a cathode.
2. The method according to claim 1, wherein a gas is used to cool a back surface of said base body to thereby cool said seed film.
3. The method according to claim 2, wherein said gas is any one of a nitrogen gas and an air.
4. The method according to claim 1, wherein when performing said electro-plating, said seed film is dipped into the plating solution while simultaneously applying a voltage to said seed film.
5. The method according to claim 4, wherein during dipping said seed film into said plating solution, said seed film is applied a lower voltage than a start-up voltage for starting electro-plating after the dipping into said plating solution.
6. The method according to claim 5, wherein the voltage as applied when dipping into said plating solution has its current density less than or equal to one-half of a current density of a current to be flown upon start-up of said electro-plating.
7. The method according to claim 5, wherein when performing said electro-plating, a plurality of steps different in current density from each other are performed.
8. The method according to claim 1, wherein said base body has an opening formed therein, and wherein said electro-plating is used to perform filling of a copper-containing film in the opening and additional deposition of said copper-containing film above said base body.
9. The method according to claim 8, wherein the additional deposition is performed while letting said base body be cooled.
10. The method according to claim 9, wherein during the additional deposition of said copper-containing film, electro-plating is performed at a current density of 80 milliamperes per square centimeter (mAcm2) or greater.
11. The method according to claim 9, wherein said base body is cooled by cooling a back surface of said base body using a gas.
12. The method according to claim 11, wherein said gas is any one of a nitrogen gas and an air.
13. A method for fabricating an electronic component, comprising:
forming an opening in a base body;
burying a copper-containing film in the opening; and
permitting additional deposition of said copper-containing film above said base body with the opening filled with said copper-containing film while cooling said base body.
14. The method according to claim 13, wherein the burying and the additional deposition are performed by an electro-plating technique.
15. The method according to claim 14, wherein during the additional deposition of said copper-containing film, electro-plating is performed with a current density higher than that during burying said copper-containing film.
16. The method according to claim 14, wherein during the additional deposition of said copper-containing film, electro-plating is performed at a current density of 80 mAcm2 or greater.
17. The method according to claim 14, wherein said base body is dipped in a plating solution while letting said base body be cooled.
18. The method according to claim 13, wherein a back surface of said base body is cooled by use of a gas.
19. The method according to claim 18, wherein said gas is any one of a nitrogen gas and an air.
20. The method according to claim 13, wherein the burying results in formation of a copper interconnect wire of a semiconductor device.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
That which is claimed:
1. A template oligonucleotide comprising regions complementary to plant genomic DNA, the complementary regions flank a non-complementary region, and the template oligonucleotide comprises a single-stranded nucleic acid comprising at least one cationic phosphoramidate internucleoside linkage.
2. The template oligonucleotide of claim 1, wherein the plant genomic DNA is a regulatory region.
3. The template oligonucleotide of claim 1, wherein the plant genomic DNA is a promoter region.
4. The template oligonucleotide of claim 1, wherein the plant genomic DNA is a from a junction of an intron and an exon.
5. The template oligonucleotide of claim 1, wherein the plant genomic DNA is a transformed DNA.
6. The template oligonucleotide of claim 5, wherein the plant genomic DNA is a recombination site.
7. The template oligonucleotide of claim 1, wherein the plant genomic DNA is a transposable element.
8. The template oligonucleotide of claim 1, wherein the at least one non-homologous nucleotide produces a stop codon.
9. The template oligonucleotide of claim 1, wherein the at least one non-homologous nucleotide produces a nucleotide deletion in the plant genome.
10. The template oligonucleotide of claim 1, wherein the plant genomic DNA encodes a protein.
11. The template oligonucleotide of claim 1, wherein the plant genomic DNA encodes a recombinase protein.
12. The template oligonucleotide of claim 1, wherein the plant genomic DNA is involved with herbicide tolerance in the plant.
13. The template oligonucleotide of claim 1, wherein the plant genomic DNA is involved with disease resistance in a plant.
14. A plant cell comprising a template oligonucleotide comprising regions complementary to plant genomic DNA, the complementary regions flank a non-complementary region, and the template oligonucleotide comprises a single-stranded nucleic acid comprising at least one cationic phosphoramidate internucleoside linkage.
15. A method of introducing a predetermined alteration in genomic DNA of a plant cell, the method comprising introducing a template oligonucleotide into the plant cell, the template oligonucleotide comprising regions complementary to the plant genomic DNA, the complementary regions flank a non-complementary region, and wherein the template oligonucleotide comprises a single-stranded nucleic acid comprising at least one cationic phosphoramidate internucleoside linkages.
16. The method of claim 15, wherein the plant genomic DNA is a regulatory region.
17. The method of claim 15, wherein the plant genomic DNA is a promoter region.
18. The method of claim 15, wherein the plant genomic DNA is from a junction of an intron and an exon.
19. The method of claim 15, wherein the plant genomic DNA is transformed DNA.
20. The method of claim 19, wherein the transformed DNA is a recombination site.
21. The method of claim 15, wherein the plant genomic DNA is involved with herbicide tolerance in the plant.
22. The method of claim 15, wherein the plant genomic DNA is involved with disease resistance in a plant.
23. The method of claim 15, wherein the at least one non-homologous nucleotide produces a stop codon.
24. The method of claim 15, wherein the at least one non-homologous nucleotide produces a nucleotide deletion in the plant genome.
25. The method of claim 15, wherein the plant genomic DNA encodes a protein.
26. The method of claim 15, wherein the protein is a recombinase protein.
27. The method of claim 15, wherein the predetermined alteration confers herbicide resistance to the plant.
28. A method to inactivate a polynucleotide of interest introduced into a plant genome, the method comprising introducing into a plant cell a template oligonucleotide capable of implementing a modification in the polynucleotide of interest such that the modification prevents expression of the polynucleotide of interest, wherein the template oligonucleotide comprises regions complementary to the polynucleotide of interest, the complementary regions flank a non-complementary region, and wherein the template comprises a single-stranded nucleic acid comprising at least one cationic phosphoramidate internucleoside linkage.
29. The method of claim 28, wherein the modification is in a regulatory region.
30. The method of claim 28, wherein the modification is in a promoter region.
31. The method of claim 28, wherein the modification is in a coding region.
32. The method of claim 28, wherein the template oligonucleotide introduces a frameshift in the coding region.
33. The method of claim 28, wherein the template oligonucleotide introduces a premature stop codon in the in the coding region.
34. The method of claim 28, wherein the polynucleotide of interest encodes a selectable andor scorable marker.
35. The method of claim 28, wherein the polynucleotide of interest is involved with herbicide resistance.
36. The method of claim 28, wherein the polynucleotide of interest is involved with disease resistance.
37. A method for creating a predetermined nucleotide pair mismatch in a plant genomic DNA upon which endogenous mismatch repair mechanisms can operate to create a nucleotide alteration, the method comprising introducing a template oligonucleotide into the plant cell, the template oligonucleotide comprising regions complementary to the plant genomic DNA, the complementary regions flank a non-complementary region, and the template oligonucleotide comprises a single-stranded nucleic acid comprising at least one cationic phosphoramidate internucleoside linkage.
38. The method of claim 37, wherein the plant polynucleotide encodes an herbicide resistance gene.
39. The method of claim 37, wherein the polynucleotide of interest is involved with herbicide resistance.