1. A method of controlling a system in a vehicle comprising:
generating a pitch rate signal;
generating a lateral acceleration signal;
generating a longitudinal acceleration signal;
generating a yaw rate signal;
generating a roll rate signal;
determining a first global roll angle and a first global pitch angle in response to the roll rate signal, the lateral acceleration signal, the longitudinal acceleration signal and the yaw rate signal;
determining a second global roll angle and a second global pitch angle in response to the pitch rate signal, the lateral acceleration signal, the longitudinal acceleration signal and the yaw rate signal;
combining the first global roll angle and the second global roll angle to form a final global roll angle;
combining the first global pitch angle and the second global pitch angle to form a final global pitch angle; and
controlling the system in response to the final global roll angle and the final global pitch angle.
2. A method as claimed in claim 1 further comprising:
determining a vehicle lateral velocity;
determining a third global roll angle in response to the second global roll angle and the lateral velocity;
determining a third global pitch angle in response to the second global pitch angle and the vehicle lateral velocity;
combining the first, second and third global roll angles to form the final global roll angle; and
combining the first, second and third global pitch angles to form the final global pitch angle.
3. A method as claimed in claim 1 wherein controlling the system comprises controlling a safety system.
4. A method as claimed in claim 3 wherein controlling a safety system comprises controlling a yaw control system.
5. A method as claimed in claim 3 wherein controlling a safety system comprises controlling a rollover control system.
6. A method as claimed in claim 1 wherein controlling the system comprises actuating braking on the vehicle.
7. A method as claimed in claim 1 wherein controlling the system comprises actuating steering on the vehicle.
8. A method as claimed in claim 1 wherein controlling the system comprises deploying a rollover curtain.
9. A method as claimed in claim 1 wherein controlling the system comprises deploying an airbag.
10. A method of controlling a vehicle system comprising:
determining a vehicle global roll angle from a roll rate signal and a pitch rate signal;
determining a vehicle global pitch angle from a roll rate signal and a pitch rate signal;
controlling the system in response to the vehicle global roll angle and the vehicle global pitch angle.
11. A method as claimed in claim 10 wherein controlling the system comprises controlling a safety system.
12. A method as claimed in claim 11 wherein controlling a safety system comprises controlling a yaw control system.
13. A method as claimed in claim 11 wherein controlling a safety system comprises controlling a rollover control system.
14. A method as claimed in claim 10 wherein controlling the system comprises actuating braking on the vehicle.
15. A method as claimed in claim 10 wherein controlling the system comprises actuating steering on the vehicle.
16. A method as claimed in claim 10 wherein controlling the system comprises deploying a rollover curtain.
17. A method as claimed in claim 10 further comprising the steps of:
determining the global roll angle from a vehicle lateral velocity; and
determining the global pitch angle from a vehicle lateral velocity.
18. A method as claimed in claim 17 wherein controlling the system comprises controlling a safety system.
19. A method as claimed in claim 18 wherein controlling a safety system comprises controlling a yaw control system.
20. A method as claimed in claim 18 wherein controlling a safety system comprises controlling a rollover control system.
21. A method as claimed in claim 17 wherein controlling the system comprises actuating braking on the vehicle.
22. A method as claimed in claim 17 wherein controlling the system comprises actuating steering on the vehicle.
23. A method as claimed in claim 17 wherein controlling the system comprises deploying a rollover curtain.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A fuse structure comprising:
a conductive line on a substrate;
first and second vias on the conductive line that are spaced apart from each other;
a cathode electrode line that is electrically connected to the first via;
an anode electrode line that is electrically connected to the second via; and
a dummy pattern disposed adjacent at least one of the cathode and anode electrode lines that is electrically isolated from the conductive line.
2. The fuse structure as set forth in claim 1, wherein:
the first via and the cathode electrode line include substantially the same material; and
the second via and the anode electrode line include substantially the same material.
3. The fuse structure as set forth in claim 2, wherein:
the cathode and anode electrode lines include substantially the same material.
4. The fuse structure as set forth in claim 3, wherein:
an electromigration rate of the material included in the cathode and anode electrode lines is higher than an electromigration rate of the material included in the conductive line.
5. The fuse structure as set forth in claim 1, wherein:
the cathode and anode electrode lines and the first and second vias include copper andor a copper compound; and
the conductive line includes tungsten, aluminum, silver, gold, andor a compound thereof.
6. The fuse structure as set forth in claim 1, wherein:
the dummy pattern includes:
a first dummy pattern adjacent the cathode electrode line; and
a second dummy pattern adjacent the anode electrode line,
the first and second dummy patterns including substantially the same material as the material included in the cathode and the anode electrode lines.
7. The fuse structure as set forth in claim 1, wherein:
a length-to-width ratio of the conductive line is between about 1 and about 100.
8. The fuse structure as set forth in claim 1, wherein:
a length-to-width ratio of the cathode electrode line is between about 1 and about 100; and
a length-to-width ratio of the anode electrode line is between about 1 and about 100.
9. The fuse structure as set forth in claim 1, further comprising:
a first barrier layer covering a bottom surface and a side surface of the conductive line;
a second barrier layer covering a bottom surface and a side surface of the first via, a side surface of the cathode electrode line, a bottom surface and a side surface of the second via and a side surface of the anode electrode line.
10. The fuse structure as set forth in claim 1, wherein:
the dummy pattern has substantially a same shape as one of the cathode and anode electrode lines.
11. The fuse structure as set forth in claim 1, wherein:
a length of the conductive line is three times greater than a center-to-center distance between the first and second vias.
12. The fuse structure as set forth in claim 1, wherein:
a dimension of each of the first and second vias has a minimum critical dimension of a semiconductor device that includes the fuse structure.
13. A method of blowing a fuse structure that includes a conductive line on a substrate, first and second vias on the conductive line and spaced apart from each other, a cathode electrode line electrically connected to the first via, and an anode electrode line electrically connected to the second via, where the conductive line includes a first material having a first electromigration rate and the first and second vias and the cathode and anode electrode lines include a second material having a second electromigration rate that is higher than the first electromigration rate, the method comprising:
letting a voltage difference occur between the cathode and anode electrode lines;
moving a portion of the second material of the cathode electrode line through the first via, the conductive line, and the second via to the anode electrode line in order to increase a width of the anode electrode line; and
forming a void in the first via to blow the fuse structure.
14. The method as set forth in claim 13, wherein electrons migrate downstream from the cathode electrode line to the first via.
15. The method as set forth in claim 13, wherein:
the first material includes at least one of tungsten, aluminum, silver, gold, and a compound thereof; and
the second material includes at least one of copper andor a copper compound.
16. A semiconductor device, comprising:
a semiconductor substrate having a device region having a plurality of semiconductor circuits and a fuse region having a fuse structure, the fuse structure including:
a conductive line that includes a first material having a first electromigration rate;
a first via and a second via that is spaced apart from the first via on the conductive line;
a cathode electrode line on the first via and electrically connected to the conductive line through the first via;
an anode electrode line on the second via and electrically connected to the conductive line through the second via; and
a dummy conductive pattern adjacent at least one of the cathode electrode line and the anode electrode line, the dummy conductive pattern electrically isolated from the conductive line,
wherein the first via, the second via, the cathode electrode line, the anode electrode line and the conductive dummy pattern each include a second material having a second electromigration rate that exceeds the first electromigration rate.
17. The semiconductor device of claim 16, wherein a width of the cathode electrode line exceeds a width of the first via, and a width of the anode electrode line exceeds a width of the second via.
18. The semiconductor device of claim 17, wherein the dummy conductive pattern comprises a first dummy conductive pattern adjacent the cathode electrode line and a second dummy conductive pattern adjacent the anode electrode line, the cathode and anode electrode lines being between the first and second dummy patterns and the cathode and anode electrode lines each having a top surface that is the same height above a bottom surface of the semiconductor substrate as are the top surfaces of the first and second dummy conductive patterns.
19. The semiconductor device of claim 18, wherein the conductive line extends in a first direction, and wherein the cathode electrode line, the anode electrode line and the first and second dummy conductive patterns each extend in a second direction that is substantially perpendicular to the first direction.
20. The semiconductor device of claim 16, wherein the first material is selected from the group of tungsten, aluminum, silver and gold and wherein the second material includes copper.