1. A method for depositing a silicon layer on a transparent conducting oxide (TCO) layer, comprising:
laser scribing a cell-integrated region of the TCO layer disposed on a substrate for solar applications, the TCO layer having a periphery region that is free from laser scribing outward of the cell-integrated region, the periphery region having a width between about 10 mm and about 30 mm as measured from an edge of the substrate;
transferring the scribed substrate onto a support surface of a substrate support assembly disposed in a deposition chamber;
directly contacting a first conductive surface of a shadow frame to the periphery region of the scribed substrate;
directly contacting a second conductive surface of the shadow frame to the support surface; and
depositing a silicon containing layer on the TCO layer in the deposition chamber.
2. The method of claim 1, wherein laser scribing further comprises:
forming a scribe line having parallel sections, the parallel sections being spaced apart by an amount that is between about 5 millimeter (mm) to about 45 millimeter (mm).
3. The method of claim 1, wherein transferring the scribed substrate into the deposition chamber further comprises:
positioning the substrate on the support surface of the substrate support assembly disposed in the deposition chamber, the support surface having a surface roughness between about 100 micro-inches and about 3000 micro-inches across the entire surface in contact with the substrate.
4. The method of claim 1, wherein the first and second conductive surfaces are bare aluminum.
5. The method of claim 1, wherein depositing the silicon containing layer further comprises:
depositing the silicon containing layer through an aperture of the shadow frame, wherein the aperture is smaller than a roughened surface formed of the support surface.
6. The method of claim 5 further comprising
contacting the shadow frame to the support surface, wherein a portion of the shadow frame overlies a roughened portion of the support surface having a surface roughness between about 100 micro-inches and about 3000 micro-inches.
7. The method of claim 6, wherein contacting the shadow frame to the support surface further comprises:
contacting a portion of the support surface outward of the roughened surface.
8. A method for depositing a silicon layer on a transparent conducting oxide (TCO) layer, comprising:
providing a substrate having the TCO layer disposed thereon, wherein the TCO layer has a peripheral region and a cell integrated region, the cell integrated region having laser scribing patterns disposed thereon;
positioning the substrate on a substrate support assembly disposed in a processing chamber, wherein the substrate support assembly has a roughened surface in contact with the substrate;
directly contacting a shadow frame to the peripheral region of the TCO layer and to the substrate support assembly thereby creating an electrical ground path between the TCO layer and the substrate support assembly through the shadow frame; and
depositing a silicon containing layer on the TCO layer through an aperture of the shadow frame.
9. The method of claim 8, wherein the peripheral region of the TCO layer on the substrate has a width between about 10 mm and about 30 mm as measured from an edge of the substrate.
10. The method of claim 8, wherein the roughened surface of the substrate support assembly has a roughness between about 100 \u03bc-inches and 3000 \u03bc-inches.
11. The method of claim 8, wherein positioning the substrate further comprises:
placing the entire backside of the substrate in contact with the roughened surface of the substrate support assembly, wherein the roughened surface has a roughness between about 100 \u03bc-inches and 3000 \u03bc-inches.
12. The method of claim 11, wherein contacting the shadow frame to the substrate support assembly further comprises:
contacting the shadow frame to the roughened surface.
13. The method of claim 11, wherein contacting the shadow frame to the substrate support assembly further comprises:
contacting a surface of the substrate support assembly outward of the roughened surface.
14. The method of claim 11, wherein contacting the shadow frame to the substrate support assembly further comprises:
positioning a portion of the shadow frame over the roughened surface.
15. The method of claim 8, wherein the aperture is smaller than the roughened surface formed in the substrate support surface.
16. The method of claim 8, wherein the peripheral region of the TCO layer on the substrate is free from laser scribing.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for an efficient discontinuous reception (\u2018DRX\u2019) operation during handover in a Long Term Evolution (\u2018LTE\u2019) system in which a user equipment expects handover to occur from an enhanced Node B (\u2018eNB\u2019), the method comprising:
deciding, at the eNB, whether a handover is to occur;
if the eNB decided that no handover is to occur,
receiving at the user equipment from the eNB a message indicating that no handover will occur, within a predetermined time period; and
maintaining a normal DRX cycle at the user equipment;
if the eNB decided that a handover is to occur, performing at the user equipment the steps of:
(1) ensuring the user equipment is not in a DRX sleep period during reception of a handover grant; and
(2) checking whether the handover grant is received, and
if the handover grant is received, performing a handover procedure; and
if the handover grant is not received, resuming the normal DRX cycle.
2. The method of claim 1, wherein the step of ensuring the user equipment is not in the DRX sleep period utilizes an extended DRX awake period.
3. The method of claim 1, further comprising, at the eNB, signaling the handover decision to the user equipment.
4. The method of claim 1 further comprising, after said resuming step, receiving updated measurement control information for the handover procedure.
5. The method of claim 1, further comprising sending of a measurement report from the user equipment to the eNB.
6. The method of claim 5, further comprising at the user equipment the step of, on the sending of the measurement report, entering a continuous channel monitoring.
7. The method of claim 1, wherein the eNB decides the handover is to occur based on a parameter in a measurement report being above or below a predetermined threshold.
8. The method of claim 1, further comprising the step of receiving, at the user equipment from the eNB, a short DRX cycle.
9. The method of claim 4, further comprising the steps of, at the user equipment: entering the short DRX cycle, wherein the short DRX cycle has a length set based on a value that is one of received from the eNB or pre-configured; and wherein the value is predetermined and stored on the eNB.
10. The method of claim 1, further comprising at the user equipment, on the receiving of the message indicating that no handover will occur, the step of ending channel monitoring.
11. A system for an efficient discontinuous reception (\u2018DRX\u2019) operation during handover in a Long Term Evolution (\u2018LTE\u2019) system comprising a user equipment and an enhanced node B (\u2018eNB\u2019), the system comprising at least one processor, wherein the at least one processor is configured to:
decide at the eNB whether a handover is to occur;
if the eNB decided that no handover is to occur,
receive at the user equipment from the eNB a message indicating that no handover will occur, within a predetermined time period; and maintain a normal DRX cycle at the user equipment;
if the eNB decided that handover is to occur, the user equipment being configured to:
(1) ensure the user equipment is not in a DRX sleep period during reception of a handover grant; and
(2) check whether the handover grant is received, and
if the handover grant is received, perform a handover procedure; and if the handover grant is not received, resume the normal DRX cycle.
12. The system of claim 11, wherein the processor at the user equipment is configured to ensure that the user equipment is not in the DRX sleep period by utilizing an extended DRX awake period.
13. The system of claim 11 wherein the processor at the user equipment is further configured to receive updated measurement control information for the handover procedure.
14. The system of claim 11, wherein the processor at the user equipment is further configured to send a measurement report to the eNB.
15. The system of claim 14, wherein the processor at the user equipment is further configured, on the sending of the measurement report, to enter a continuous channel monitoring.
16. The system of claim 11, wherein the processor at the eNB is configured to decide whether the handover is to occur based on a parameter in a measurement report being above or below a predetermined threshold.
17. The system of claim 11, wherein the processor at the user equipment is further configured to receive, at the user equipment from the eNB, a short DRX cycle.
18. The system of claim 17, wherein
the processor at the user equipment is further configured to enter the short DRX cycle, wherein the short DRX cycle has a length set based on a value that is one of received from the eNB or pre-configured;
wherein the value is predetermined and stored on the eNB.
19. The system of claim 11, the processor at the user equipment is further configured, on the receiving of the message indicating that no handover will occur, to end channel monitoring.