What is claimed is:
1. A reformer controlling apparatus, comprising:
a reformer having a catalyst unit including a catalyst promoting a steam reforming reaction and a catalyst for promoting a partial oxidation reaction;
a raw fuel gas supplier supplying raw fuel gas containing hydrocarbon and steam to said catalyst unit;
an oxidation gas supplier supplying oxidation gas containing oxygen to said catalyst unit;
a first reaction state detector detecting a state of a reaction progressing at an upstream portion of flows of said raw fuel gas and said oxidation gas in said catalyst unit
a second reaction state detector detecting a state of a reaction in the whole of the catalysts in said catalyst unit;
a first corrector correcting feed amounts of said raw fuel gas and said oxidation gas, which are supplied to said catalyst unit, based on said state of the reaction detected by said second reaction state detector; and
a second corrector correcting the feed amount of said oxidation gas, which is supplied to said catalyst unit andor a feed timing thereof based on said state of the reaction detected by said first reaction state detector.
2. The reformer controlling apparatus according to claim 1, wherein said first reaction state detectors are set in plural positions, and a detection signal switcher is provided, which switches, with passage of time, a detection signal supplied to said second corrector among detection signals indicating said reaction state detected by said first reaction state detector.
3. The reformer controlling apparatus according to claim 1, wherein said first motion state detector detects a temperature state as said reaction state.
4. The reformer controlling apparatus according to claim 1, wherein said first reaction state detector detects a reaction state at a spot of said catalyst unit where the maximum temperature is generated.
5. The reformer controlling apparatus according to claim 1, wherein said first reaction state detectors for detecting a temperature state are set in plural positions, a maximum temperature selector for selecting the highest temperature among detected temperatures output from the first reaction state detectors is provided, and said second corrector uses an output of the maximum temperature selector.
6. The reformer controlling apparatus according to claim 1, wherein said second reaction state detector detects a temperature state as said reaction state.
7. A reformer controlling apparatus, comprising:
a reformer having a catalyst unit including a catalyst for promoting a steam reforming reaction and a catalyst for promoting a partial oxidation reaction;
raw fuel gas supplying means for supplying raw fuel gas containing hydrocarbon and steam to said catalyst unit;
oxidation gas supplying means for supplying oxidation gas containing oxygen to said catalyst unit;
first reaction state detecting means for detecting a state of a reaction progressing at an upstream portion of flows of said raw fuel gas and said oxidation gas in said catalyst unit;
second reaction state detecting means for detecting a state of a con in the whole of the catalysts in said catalyst unit;
first correcting means for correcting feed amounts of said raw fuel gas and said oxidation gas, which are supplied to said catalyst unit, based on said state of the reaction detected by said second reaction state detecting means; and
second correcting means for correcting the feed amount of said oxidation gas, which is supplied to said catalyst unit andor a feed timing thereof based on said state of the reaction detected by said first reaction state detecting means.
8. A method of controlling a reformer, comprising:
promoting a steam reform reaction and a partial oxidation reaction in a catalyst unit of said reformer;
supplying raw fuel gas containing hydrocarbon and steam to said catalyst unit by a raw fuel supplier;
supplying oxidation gas containing oxygen to said catalyst unit by an oxidation gas supplier;
detecting a state of a reaction progressing at an upstream portion of flows of said raw fuel gas and said oxidation gas in said catalyst unit by a first reaction state detector;
detecting a state of a reaction in the whole of the catalysts in said catalyst unit by a second reaction state detector;
correcting feed amounts of said raw fuel gas and said oxidation gas, which are supplied to said catalyst unit by a first corrector, based on said state of the reaction detected by said second reaction state detector; and
correcting the feed amount of said oxidation gas, which is supplied to said catalyst unit andor a feed timing thereof by a second corrector, based on said state of the reaction detected by said first reaction state detector.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A polishing composition for a substrate for memory hard disk, comprising silica particles in an aqueous medium, wherein the silica particles satisfy a relationship between an average particle size (r) of the silica particles on the number basis and a standard deviation (\u03c3) on the number basis of the following formula (1):
\u03c3\u22670.3\xd7r\u2003\u2003(1)
wherein r is an average particle size (nm) of the silica particles on the number basis, and \u03c3 is a standard deviation (nm) on the number basis, wherein the average particle size is obtained by a determination by transmission electron microscope (TEM) observation, and wherein a relationship between a particle size (R) and a cumulative volume frequency (V) in a range of particle sizes of from 60 to 120 nm satisfies the following formulas (2) and (3):
V\u22670.5\xd7R\u2003\u2003(2)
V\u22660.25\xd7R+75\u2003\u2003(3)
wherein R is a particle size (nm) of the silica particles, and V is a cumulative volume frequency (%) counted from a small particle size side of the silica particles.
2. The polishing composition according to claim 1, wherein the silica particles are colloidal silica particles.
3. The polishing composition according to claim 1, further comprising at least one member selected from the group consisting of acids, salts thereof and oxidizing agents.
4. The polishing composition according to claim 2, further comprising at least one member selected from the group consisting of acids, salts thereof and oxidizing agents.
5. The polishing composition according to claim 1, wherein a pH thereof is from 1 to 4.5.
6. The polishing composition according to claim 2, wherein a pH thereof is from 1 to 4.5.
7. The polishing composition according to claim 3, wherein a pH thereof is from 1 to 4.5.
8. The polishing composition according to claim 4, wherein a pH thereof is from 1 to 4.5.
9. A method of reducing microwaviness of a substrate for memory hard disk, comprising the step of polishing the substrate for memory hard disk with the polishing composition of claim 1.
10. A method of reducing microwaviness of a substrate for memory hard disk, comprising the step of polishing the substrate for memory hard disk with the polishing composition of claim 2.
11. A method of reducing microwaviness of a substrate for memory hard disk, comprising the step of polishing the substrate for memory hard disk with the polishing composition of claim 3.
12. A method of reducing microwaviness of a substrate for memory hard disk, comprising the step of polishing the substrate for memory hard disk with the polishing composition of claim 4.
13. A method of reducing microwaviness of a substrate for memory hard disk, comprising the step of polishing the substrate for memory hard disk with the polishing composition of claim 5.
14. A method of reducing microwaviness of a substrate for memory hard disk, comprising the step of polishing the substrate for memory hard disk with the polishing composition of claim 6.
15. A method for manufacturing a substrate for memory hard disk, comprising the step of polishing a Ni\u2014P plated substrate for memory hard disk with the polishing composition of claim 1.
16. A method for manufacturing a substrate for memory hard disk, comprising the step of polishing a Ni\u2014P plated substrate for memory hard disk with the polishing composition of claim 2.
17. A method for manufacturing a substrate for memory hard disk, comprising the step of polishing a Ni\u2014P plated substrate for memory hard disk with the polishing composition of claim 3.
18. A method for manufacturing a substrate for memory hard disk, comprising the step of polishing a Ni\u2014P plated substrate for memory hard disk with the polishing composition of claim 4.
19. A method for manufacturing a substrate for memory hard disk, comprising the step of polishing a Ni\u2014P plated substrate for memory hard disk with the polishing composition of claim 5.
20. A method for manufacturing a substrate for memory hard disk, comprising the step of polishing a Ni\u2014P plated substrate for memory hard disk with the polishing composition of claim 6.