1. A method for forming a MOS transistor, comprising:
providing a substrate;
sequentially forming a composite layer for forming a gate structure and a carbon-containing mask material layer on the substrate, wherein the carbon-containing mask material layer is formed with a carbon-containing precursor gas and a reaction gas;
patterning the carbon-containing mask material layer and the composite layer into a carbon-containing hard mask layer and a gate structure, respectively;
forming a spacer on sidewalls of the gate structure and the carbon-containing hard mask layer;
forming a passivation layer over the substrate;
removing a portion of the passivation layer to expose an area of the substrate; and
forming a doped epitaxial layer in the exposed area of the substrate.
2. The method of claim 1, wherein the carbon-containing precursor gas comprises bis(t-butylamino)silane, tetraethylorthosilicate (TEOS), triethoxysilane or hexamethyl-disiloxane (HMDS).
3. The method of claim 1, wherein a flow rate of the carbon-containing precursor gas is set constant during formation of the carbon-containing mask material layer.
4. The method of claim 1, wherein a flow rate of the carbon-containing precursor gas is varied with time during formation of the carbon-containing mask material layer.
5. The method of claim 2, wherein the carbon-containing precursor gas comprises bis(t-butylamino)silane and has a flow rate set within a range of about 100-235 sccm.
6. The method of claim 2, wherein the carbon-containing precursor gas comprises tetraethylorthosilicate and has a flow rate set within a range of about 100-1000 sccm.
7. The method of claim 2, wherein the carbon-containing precursor gas comprises triethoxysilane and has a flow rate set within a range of about 100-1000 sccm.
8. The method of claim 2, wherein the carbon-containing precursor gas comprises hexamethyldisiloxane and has a flow rate set within a range of about 100-500 sccm.
9. The method of claim 1, wherein the carbon-containing mask material layer comprises carbon-containing oxide, carbon-containing oxynitride or carbon-containing nitride.
10. The method of claim 9, wherein the carbon-containing mask material layer comprises carbon-containing oxide or carbon-containing oxynitride, and the reaction gas comprises O2, O3, NO or N2O.
11. The method of claim 9, wherein the carbon-containing mask material layer comprises carbon-containing nitride, and the reaction gas comprises N2 or NH3.
12. The method of claim 1, wherein the carbon-containing mask material layer is formed through APCVD, LPCVD, PECVD, HDP-CVD, RECVD, ALD or ALCVD.
13. The method of claim 1, wherein the spacer is a composite spacer comprising a first spacer on the sidewalls of the gate structure and the carbon-containing hard mask layer and a second spacer on a sidewall of the first spacer.
14. The method of claim 13, wherein the first spacer and the second spacer comprise different materials selected from a group consisting of SiO, SiN and SiON at least.
15. The method of claim 1, further comprising removing a portion of the exposed substrate to form a trench after a portion of the passivation layer is removed but before the doped epitaxial layer is formed, wherein the doped epitaxial layer fills up the trench at least.
16. The method of claim 1, further comprising forming a stress layer over the substrate after the doped epitaxial layer is formed.
17. The method of claim 16, further comprising removing a portion of the spacer after the doped epitaxial layer is formed but before the stress layer is formed.
18. The method of claim 1, further comprising removing the passivation layer after the doped epitaxial layer is formed.
19. The method of claim 1, wherein the MOS transistor is a PMOS transistor, and the doped epitaxial layer comprises P-doped SiGe.
20. The method of claim 1, wherein the MOS transistor is an NMOS transistor, and the doped epitaxial layer comprises N-doped Si\u2014C alloy.
21. A method for fabricating a MOS transistor, comprising:
providing a substrate;
sequentially forming, on the substrate, a composite layer for forming a gate structure and a composite mask material layer that comprises at least one carbon-containing layer, wherein at least one carbon-containing layer is formed with a carbon-containing precursor gas and a reaction gas;
patterning the composite mask material layer and the composite layer for forming a gate structure into a composite hard mask layer and a gate structure, respectively;
forming a spacer on sidewalls of the gate structure and the composite hard mask layer;
forming a passivation layer over the substrate;
removing a portion of the passivation layer to expose an area of the substrate; and
forming a doped epitaxial layer in the exposed area of the substrate.
22. The method of claim 21, wherein the carbon-containing precursor gas comprises bis(t-butylamino)silane, tetraethyl-orthosilicate (TEOS), triethoxysilane or hexamethyldisiloxane (HMDS).
23. The method of claim 21, wherein a flow rate of the carbon-containing precursor gas is set constant during formation of the carbon-containing layer.
24. The method of claim 21, wherein a flow rate of the carbon-containing precursor gas is varied with time during formation of the carbon-containing layer.
25. The method of claim 22, wherein the carbon-containing precursor gas comprises bis(t-butylamino)silane and has a flow rate set within a range of about 100-235 sccm.
26. The method of claim 22, wherein the carbon-containing precursor gas comprises tetraethylorthosilicate and has a flow rate set within a range of about 100-1000 sccm.
27. The method of claim 22, wherein the carbon-containing precursor gas comprises triethoxysilane and has a flow rate set within a range of about 100-1000 sccm.
28. The method of claim 22, wherein the carbon-containing precursor gas comprises hexamethyldisiloxane and has a flow rate set within a range of about 100-500 sccm.
29. The method of claim 21, wherein the carbon-containing layer comprises carbon-containing oxide, carbon-containing oxynitride or carbon-containing nitride.
30. The method of claim 29, wherein the carbon-containing layer comprises carbon-containing oxide or carbon-containing oxynitride, and a reaction gas for forming the carbon-containing layer contains O2, O3, NO or N2O.
31. The method of claim 29, wherein the carbon-containing layer comprises carbon-containing nitride, and the reaction gas comprises N2 or NH3.
32. The method of claim 21, wherein the carbon-containing layer is formed with APCVD, LPCVD, PLC VD, I-IDP-CVD, RECVD, ALD or ALCVD.
33. The method of claim 21, wherein the spacer is a composite spacer comprising a first spacer on the sidewalls of the gate structure and the composite hard mask layer and a second spacer on a sidewall of the first spacer.
34. The method of claim 33, wherein the first and the second spacers comprise different materials selected from a group consisting of SiO, SiN and SiON at least.
35. The method of claim 21, further comprising removing a portion of the exposed substrate to form a trench after a portion of the passivation layer is removed but before the doped epitaxial layer is formed, wherein the doped epitaxial layer fills up the trench at least.
36. The method of claim 21, further comprising forming a stress layer over the substrate after the doped epitaxial layer is formed.
37. The method of claim 36, further comprising removing a portion of the spacer after the doped epitaxial layer is formed but before the stress layer is formed.
38. The method of claim 21, further comprising removing the passivation layer after the doped epitaxial layer is formed.
39. The method of claim 21, wherein the MOS transistor is a PMOS transistor, and the doped epitaxial layer comprises P-doped SiGe.
40. The method of claim 21, wherein the MOS transistor is an NMOS transistor, and the doped epitaxial layer comprises N-doped Si\u2014C alloy.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1-10. (canceled)
11. Pharmaceutical composition, comprising
at least two different antibiotics of group A\u2032 or pharmaceutically acceptable derivatives or salts thereof or
an antibiotic of group A1 and at least one antibiotic of group B1 or pharmaceutically acceptable derivatives or salts thereof, wherein
group A\u2032 comprises
ansamycins, particularly rifamycins such as rifampin, rifabutin, rifapentine or rifamixin,
fluoroquinolones, particularly moxifloxaci.n,
streptogramins, particularly quinupristin andor dalfopristin, and
group B\u2032 comprises
glycopeptides, particularly vancomycin or teicoplanin,
fosfomycin,
polypeptides, particularly bacitracin, polymyxin B, other polymyxins, and daptomycin,
aminoglycosides, particularly arbekacin,
wherein
glycopeptides cannot be the second antibiotic of a composition comprising only two antibiotics and comprising an ansamycin as first antibiotic.
12. Pharmaceutical composition according to claim 11 comprising at least one rifamycin and fosfomycin.
13. Pharmaceutical composition according to claim 12 comprising rifamycin and fosfomycin in such a concentration that the rifamycin reaches a concentration of 0.005 to 100 \u03bcgml, preferably 0.006 to 80 \u03bcgml, most preferably 0.0075 to 10 \u03bcgml at the site to be treated, and fosfomycin reaches a concentration of 1 to 1000 \u03bcgml, preferably 5 to 800 \u03bcgml, most preferably 10 to 200 \u03bcgml fosfomycin at the site to be treated.
14. Pharmaceutical composition according to claim 11 comprising at least one rifamycin and daptomycin.
15. Pharmaceutical composition according to claim 14 comprising rifamycin and daptomycin in such a concentration that the rifamycin reaches a concentration of 0.005 to 100 \u03bcgml, preferably 0.006 to 80 \u03bcgml, most preferably 0.0075 to 20 \u03bcgml at the site to be treated, and daptomycin reaches a concentration of 0.1 to 100 \u03bcgml, preferably 0.5 to 80 \u03bcgml, most preferably 1 to 20 \u03bcgml at the site to be treated.
16. Pharmaceutical composition for treatment of extracellular andor intracellular microbial infected cells andor for the prevention of microbial infections of cells comprising at least one antibiotic acting as an inhibitor of bacterial RNA polymerase, at least one antibiotic affecting the bacterial cell wall or its synthesis andor at least one antibiotic acting as a gyrase inhibitor.
17. Pharmaceutical composition according to claim 16 comprising ansamycins, particulary rifamycins such as rifampin, rifabutin, rifapentine or rifamixin as inhibitors of bacterial RNA polymerase.
18. Pharmaceutical composition according to claim 16 comprising glycopeptides, particularly vancomycin or teicoplanin, fosfomycin and polypeptides, particularly bacitracin and daptomycin as antibiotics affecting the bacterial cell wall or its synthesis.
19. Pharmaceutical composition according to claim 16 comprising fluoroquinolones, particularly moxifloxacin, as gyrase inhibitor.
20. Pharmaceutical composition according to claim 16, characterised in that the infected cells are osteoblasts, leucocytes, erythrocytes, keratinocytes, fibroblasts, fat cells, muscle cells andor endothelial cells.
21. Pharmaceutical composition according claim 16, characterised in that the microbial infection caused by gram-negative andor gram-positive bacteria, preferably by the Staphyloccoci type, most preferably by Staphylococcus aureus.
22. Substrate for medical purposes, comprising a pharmaceutical composition according to anyone of the claim 11.
23. Substrate according to claim 22, characterised in that it is arranged and provided for being used as pharmaceutical composition carrier for local antibiotic therapy of an acute or chronic infection of a tissue of a subject.
24. Substrate according to anyone of claim 22, characterised in that it comprises a fleece, a fabric, a polymethyl methacrylate, a copolymer of methylmethacrylate and methylacrylate, a biodegradable polymer, polyethylene, a metal, a ceramic, a bone cement andor a bone substitute.
25. Substrate according to claim 24, characterised in that the fleece or the fabric comprises a natural or synthetic fibre, particularly polylactide, andor collagen.
26. Substrate according to any of claim 22, characterised in that it comprises an implantable prosthesis, in particular a hip prosthesis, a shoulder prosthesis, an elbow prosthesis, a knee prosthesis or a vertebral implant or an implant for trauma surgery.
27. Implant coated with a pharmaceutical composition according to any one of the claim 11.
28-32. (canceled)