1. A hierarchically accessible monitoring system configured to be used with a standby generator, comprising:
an interface unit configured to receive information from the standby generator and to communicate the generator information;
a remote data server in communication with the interface unit, wherein the remote data server receives the generator information from the interface unit, stores the generator information, and controls access to the generator information based upon at least two hierarchical levels, each hierarchical level having different access privileges; and
a user interface configured to display the generator information from the remote data server to at least one user, wherein the user has access privileges to read the generator information based upon the user’s assigned hierarchical level.
2. The hierarchically accessible monitoring system of claim 1, further comprising a sensor in communication with the interface unit.
3. The hierarchically accessible monitoring system of claim 2, wherein the sensor is selected from the group comprising a temperature sensor, a flood sensor, a carbon monoxide sensor, a fire sensor and a freeze sensor.
4. The hierarchically accessible monitoring system of claim 1, wherein the interface unit further comprises a modem.
5. The hierarchically accessible monitoring system of claim 1, wherein the interface unit further comprises a telephone dialer.
6. The hierarchically accessible monitoring system of claim 5, wherein the telephone dialer is configured to be activated to dial a pre-programmed destination number, and to transmit a pre-programmed message.
7. The hierarchically accessible monitoring system of claim 1, wherein the interface unit further comprises a RF transmitter.
8. The hierarchically accessible monitoring system of claim 1, wherein the interface unit further comprises a microprocessor.
9. The hierarchically accessible monitoring system of claim 1, wherein the interface unit further comprises local memory storage.
10. The hierarchically accessible monitoring system of claim 1, wherein the user interface is selected from the group comprising a laptop computer, a desktop computer, a personal data assistant (PDA), a cell phone, a facsimile machine, a service center, and a second home phone.
11. The hierarchically accessible monitoring system of claim 1, wherein the hierarchical levels comprises an administrator level and a customer level.
12. The hierarchically accessible monitoring system of claim 11, wherein the hierarchical levels further comprises a dealer level.
13. The hierarchically accessible monitoring system of claim 1, wherein the interface unit comprises a broadband interface unit.
14. The hierarchically accessible monitoring system of claim 1, wherein the interface unit includes communication with the remote data server via a network.
15. The hierarchically accessible monitoring system of claim 14, wherein the network is selected from a publicly accessible network or a privately accessible network.
16. The hierarchically accessible monitoring system of claim 1, wherein the interface unit further comprises a receptacle for accepting a diagnostic tool.
17. The hierarchically accessible monitoring system of claim 1, wherein the interface unit is configured to wirelessly access and collect information of the generator.
18. The hierarchically accessible monitoring system of claim 1, further comprising generator settings, wherein the remote data server is configured for the user to access and adjust the generator settings.
19. A method of remotely accessing generator information from a standby generator, comprising:
providing an interface unit that is in communication with the generator, wherein the generator is at a first location;
transmitting information about the generator through the interface unit to a remote data center at a second location; and
transmitting the generator information from the remote data center via a user interface to a user.
20. The method of claim 19, further comprising:
associating a hierarchical level with the generator information stored on the data server; and
limiting access to the stored generator information to users having privileges to access the hierarchical level associated with the stored generator information.
21. The method of claim 19, further comprising:
transmitting the report of an event of the generator from the interface unit to the remote data center; and
notifying the user of an event by sending a message to the user from the remote data center.
22. The method of claim 21, further comprising transmitting the sent message to the user by e-mail, by phone, by text message or by facsimile.
23. The method of claim 21, wherein the event is a fault, a warning, an alarm, or a notification of the generator.
24. The method of claim 19, further comprising:
accessing the stored generator information by the user; and
altering an event notification received by the user by changing a setting of the stored generator information.
25. The method of claim 19, further comprising:
altering a generator parameter by accessing the stored generator information via the user interface.
26. The method of claim 19, wherein the user interface is a communication module at a residence, the method further comprising:
accessing the generator information at the communication module;
accessing the generator information at a second location through the remote data center via a network; and
changing the generator information at the second location through the remote data center via the network.
27. The method of claim 19, further comprising displaying the generator information on a display of the user interface.
28. A method of remotely accessing generator information from a standby generator, comprising:
providing an interface unit that is in communication with the generator;
transmitting generator information through the interface unit to a remote data center;
controlling access to the generator information based upon at least two protected hierarchical levels; and
transmitting the generator information from the remote data center via a user interface to a user having access privileges based upon the hierarchical level associated with the user.
29. The method of claim 28, further comprising authenticating a user as having access privileges to a hierarchical level.
30. The method of claim 28, further comprising:
selectively sending a notification of a generator event to the user, wherein the user is a customer or a dealer.
31. The method of claim 28, further comprising:
dividing the protected hierarchical levels into a first level and a second level;
setting access privileges of the hierarchical level associated with the user; assigning the first level as an administrator level, wherein the user is an administrator and the administrator has administrator level privileges; and
assigning the second level as a customer level, wherein the user is a customer and the customer has customer level privileges.
32. The method of claim 31, further comprising:
setting a dealer hierarchical level; and
assigning dealer level access privileges to a dealer.
33. The method of claim 31, further comprising:
providing a capability of the system whereby a user changes a notification of a generator event, wherein the user is the customer; and
setting the sending of the notification, wherein the notification is sent to the user and a dealer.
34. The method claim 31 further comprising
searching the stored generator information by the administrator having administrator level privileges.
35. The method of claim 34, wherein the searching step further comprises sorting the information based on geographical area.
36. The method of claim 34, wherein the searching step further comprises sorting the information based on dealer name.
37. The method of claim 34, wherein the searching step further comprises sorting the information based on a parameter of the generator.
38. The method of claim 24, further comprising providing a capability of the system such that the user may alter settings of the generator via the user interface.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A semiconductor light-emitting element comprising:
a first semiconductor layer;
a second semiconductor layer;
a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer;
a first electrode connected to the first semiconductor layer; and
a second electrode provided on the second semiconductor layer,
wherein a side of the second electrode facing to the second semiconductor layer is composed of at least any one of silver and silver alloy,
wherein the second electrode has a void having a width of emission wavelength or less of the light-emitting layer in a plane of the second electrode facing to the second semiconductor layer, and
wherein the void is provided in an interface of the second electrode to the second semiconductor layer and provided so as to pass through the thickness direction of the second electrode.
2. The element according to claim 1, wherein the void is formed by migration according to high-temperature heat treatment of silver contained in the second electrode.
3. The element according to claim 1, wherein the first semiconductor layer, the second semiconductor layer and the light-emitting layer are formed on a sapphire substrate.
4. The element according to claim 1, wherein the first semiconductor layer, the second semiconductor layer and the light-emitting layer are made of AlxGa1\u2212x\u2212yInyN (x\u22670, y\u22670, x+y\u22661).
5. The element according to claim 1, wherein the first semiconductor layer has n-type conductivity and the second semiconductor layer has p-type conductivity.
6. The element according to claim 1, wherein the second electrode is a silver monolayer film.
7. The element according to claim 1, further comprising a third electrode, the third electrode:
being provided on the second semiconductor layer,
being in contact with the second electrode, and
having a higher ohmic property than an ohmic property of the second electrode with respect to the second semiconductor layer.
8. The element according to claim 1, further comprising a fluorescent material having an emission center of trivalent Eu and excited by a light with the emission wavelength to emit a red light, the first semiconductor layer, the second semiconductor layer and the light-emitting layer being made of semiconductor nitride, the emission wavelength of the light-emitting layer being 370 nm to 400 nm.
9. The element according to claim 1, further comprising a transparent conductive film being provided between the second semiconductor layer and the second electrode and transmitting a light from the light-emitting layer.
10. The element according to claim 9, wherein the transparent conductive film is made of a material having a larger band gap than an energy of photon at an emission wavelength of the light-emitting layer.
11. The element according to claim 9, wherein a film thickness of the transparent conductive film is thinner than an inverse number of an absorption coefficient in an emission wavelength of the light-emitting layer.
12. The element according to claim 9, wherein the transparent conductive film contains at least one of nickel, indium tin oxide, and zinc oxide.
13. The element according to claim 1, wherein the first semiconductor layer, the second semiconductor layer and the light-emitting layer are formed on a sapphire substrate via a single crystal aluminum nitride layer.
14. The element according to claim 13, wherein in the sapphire substrate side of the single crystal aluminum nitride layer, a region having a higher carbon concentration than that of the inside of the single crystal aluminum nitride layer is provided.
15. A semiconductor light-emitting element comprising:
a first semiconductor layer;
a second semiconductor layer;
a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer;
a first electrode connected to the first semiconductor layer; and
a second electrode provided on the second semiconductor layer,
wherein a side of the second electrode facing to the second semiconductor layer is composed of at least any one of silver and silver alloy,
wherein the second electrode has a void having a width of emission wavelength or less of the light-emitting layer in a plane of the second electrode facing to the second semiconductor layer, and
wherein the void is provided in an interface of the second electrode to the second semiconductor layer and in an interface of the second electrode opposite to the second semiconductor layer.
16. A semiconductor light-emitting element comprising:
a first semiconductor layer;
a second semiconductor layer;
a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer;
a first electrode connected to the first semiconductor layer; and
a second electrode provided on the second semiconductor layer,
wherein a side of the second electrode facing to the second semiconductor layer is composed of at least any one of silver and silver alloy,
wherein the second electrode has a void having a width of emission wavelength or less of the light-emitting layer in a plane of the second electrode facing to the second semiconductor layer, and
wherein the void is provided in the interface of the second electrode to the second semiconductor layer and in a layer of the second electrode.
17. A semiconductor light-emitting element comprising:
a first semiconductor layer;
a second semiconductor layer;
a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer;
a first electrode connected to the first semiconductor layer; and
a second electrode provided on the second semiconductor layer,
wherein a side of the second electrode facing to the second semiconductor layer is composed of at least any one of silver and silver alloy,
wherein the second electrode has a void having a width of emission wavelength or less of the light-emitting layer in a plane of the second electrode facing to the second semiconductor layer, and
wherein the second electrode is a silver monolayer film.
18. A semiconductor light-emitting element comprising:
a first semiconductor layer;
a second semiconductor layer;
a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer;
a first electrode connected to the first semiconductor layer;
a second electrode provided on the second semiconductor layer; and
a third electrode being provided on a second semiconductor layer, being in contact with the second electrode and having a higher ohmic property than an ohmic property of the second electrode with respect to the second semiconductor layer,
wherein a side of the second electrode facing to the second semiconductor layer is composed of at least any one of silver and silver alloy, and
wherein the second electrode has a void having a width of emission wavelength or less of the light-emitting layer in a plane of the second electrode facing to the second semiconductor layer.
19. A semiconductor light-emitting element comprising:
a first semiconductor layer;
a second semiconductor layer;
a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer;
a first electrode connected to the first semiconductor layer; and
a second electrode provided on the second semiconductor layer,
wherein a side of the second electrode facing to the second semiconductor layer is composed of at least any one of silver and silver alloy,
wherein the second electrode has a void having a width of emission wavelength or less of the light-emitting layer in a plane of the second electrode facing to the second semiconductor layer,
wherein the first semiconductor layer, the second semiconductor layer and the light-emitting layer are formed on a sapphire substrate via a single crystal aluminum nitride layer, and
wherein in the sapphire substrate side of the single crystal aluminum nitride layer, a region having a higher carbon concentration than that of the inside of the single crystal aluminum nitride layer is provided.
20. A semiconductor light-emitting element comprising:
a first semiconductor layer;
a second semiconductor layer;
a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer;
a first electrode connected to the first semiconductor layer;
a second electrode provided on the second semiconductor layer; and
a fluorescent material having an emission center of trivalent Eu and excited by a light with the emission wavelength to emit a red light, the first semiconductor layer, the second semiconductor layer and the light-emitting layer being made of semiconductor nitride, the emission wavelength of the light-emitting layer being 370 nm to 400 nm,
wherein a side of the second electrode facing to the second semiconductor layer is composed of at least any one of silver and silver alloy, and
wherein the second electrode has a void having a width of emission wavelength or less of the light-emitting layer in a plane of the second electrode facing to the second semiconductor layer.