1. Process for chemically modifying, within its thickness, a polymer matrix chosen from matrices made of fluoropolymers and matrices made of aliphatic polymers, characterized in that said process comprises at least one step consisting in irradiating said matrix with UV light having a wavelength of less than 300 nm in order to generate, within the thickness of said matrix, zones that have short polymer chains, formed by scission of the existing chains during the passage of the UV radiation and that have free radicals denoted hereinbelow as \u201cactivated zones\u201d.
2. Process according to claim 1, characterized in that said polymer matrix is a matrix made of a fluoropolymer chosen from the group consisting in homopolymers and copolymers of vinylidenefluoride; homopolymers and copolymers of trifluoroethylene; copolymers of fluoroethylene and of propylene; copolymers of tetrafluoroethylene and of tetrafluoropropylene; copolymers of ethylene and of at least one fluoromonomer; and mixtures thereof.
3. Process according to claim 1, characterized in that said polymer matrix is a matrix made of an aliphatic polymer comprising several units, which are identical or different, of formula (I):
\u2014C(R1)(R2)\u2014C(R3)(R4)\u2014\u2003\u2003(I)
in which the groups R1, R2, R3 and R4, which are identical or different, are chosen from a hydrogen, a halogen, an optionally substituted alkyl group having 1 to 6 carbon atoms and an optionally substituted heteroalkyl group having 1 to 6 carbon atoms, a nitro group, a cyano group, an amine group, a carboxylic acid group, a sulfonic acid group, an amide group, an ester group, an imide group and an ether group.
4. Process according to claim 1, characterized in that said polymer matrix is a matrix made of polypropylene (PP) or of polyethylene (PE).
5. Process according to claim 1, characterized in that said irradiation is generated by a laser.
6. Process according to claim 1, characterized in that said irradiation is generated by an excimer lamp.
7. Process according to claim 1, characterized in that said irradiation is carried out in the presence of a mask.
8. Process according to claim 1, characterized in that said irradiation is carried out under vacuum or under gas.
9. Process according to claim 1, characterized in that said process comprises the steps consisting in:
a1) irradiating said matrix with UV light having a wavelength of less than 300 nm; and
b1) bringing said irradiated matrix obtained in step (a1) into contact with at least one compound bearing at least one ethylenically unsaturated group.
10. Process according to claim 9, characterized in that said compound having at least one ethylenically unsaturated group is a compound of formula (II):
(R4)(R5)C\u2550C(R6)(R7)\u2003\u2003(II)
in which the groups R4 to R7, which are identical or different, represent a non-metallic monovalent atom such as a halogen atom, a hydrogen atom, a saturated or unsaturated chemical group such as an alkyl or aryl group, a \u2014COOR8 or \u2014OC(O)R8 group in which R8 represents a hydrogen atom or a C1-C12, and preferably C1-C6, alkyl group, a nitrile, a carbonyl, an amine or an amide.
11. Process according to claim 9, characterized in that said compound having at least one ethylenically unsaturated group is chosen from the group constituted by vinyl acetate, acrylic acid, acrylonitrile, methacrylonitrile, methyl methacrylate, 2-hydroxymethyl methacrylate, ethyl methacrylate, 2-dimethylaminoethyl methacrylate, butyl methacrylate, propyl methacrylate, hydroxyethyl methacrylate, hydroxypropyl methacrylate, glycidyl methacrylate, hydroxyethyl methacrylate, and derivatives thereof; an acrylamide and in particular an aminoethyl, propyl, butyl, pentyl and hexyl methacrylamide, a cyanoacrylate, a diacrylate and dimethacrylate, a triacrylate and trimethacrylate, a tetraacrylate and tetramethacrylate, styrene and derivatives thereof, para-chlorostyrene, pentafluorostyrene, N-vinylpyrrolidone, 4-vinylpyridine, 2-vinylpyridine, vinyl, acryloyl or methacryloyl halides, and divinylbenzene (DVB).
12. Process according to claim 1, characterized in that said process comprises the steps that consist in:
a) irradiating said matrix with UV light having a wavelength of less than 300 nm; and
b) chemically developing the activated zones created by the UV radiation.
13. Process according to claim 12, characterized in that the activated zones are treated with a highly basic and oxidizing solution.
14. Process for structuring a polymer matrix made of a fluoropolymer or of an aliphatic polymer consisting in subjecting the latter to a process as defined in claim 1.
15. Polymer matrix made of a fluoropolymer or of an aliphatic polymer capable of being chemically modified by a process as defined in claim 1.
16. Polymer matrix made of a fluoropolymer or of an aliphatic polymer according to claim 15, characterized in that at least one (co)polymer formed from units derived from one or more compound(s) bearing at least one ethylenically unsaturated group is grafted to said polymer matrix, within its thickness.
17. Polymer matrix made of a fluoropolymer or of an aliphatic polymer according to claim 15, characterized in that it has hollow channels within its thickness.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for measuring critical dimensions of a mask design pattern, comprising:
setting up a server comprising a measure system;
establishing a connection between the server and a remote terminal through the Internet; and
utilizing the remote terminal to login the server so as to transmit the mask design pattern to the server and remotely control the measure system to measure the critical dimensions of the mask design pattern.
2. The method of claim 1 further comprising:
providing a login system in the server; and
utilizing the login system for determining whether the remote terminal can login the server according to security rules;
wherein if login data inputted by the remote terminal into the login system conforms to the security rules, the login system allows the remote terminal to login the server.
3. The method of claim 1 further comprising:
setting up a database for storing the critical dimensions.
4. The method of claim 1, wherein an interface of the measure system is a web page.
5. A system for measuring critical dimensions of a mask design pattern, comprising:
a server comprising a measure system which is utilized for measuring the critical dimensions of the mask design pattern; and
a remote terminal coupled to the server through the Internet for transmitting the mask design pattern to the server and remotely controlling the measure system to measure the critical dimensions of the mask design pattern.
6. The system of claim 5, wherein the server further comprises:
a login system for determining whether the remote terminal can login the server according to security rules;
wherein if login data inputted by the remote terminal into the login system conforms to the security rules, the login system allows the remote terminal to login the server.
7. The system of claim 5 further comprising:
a database for storing the critical dimensions.
8. The system of claim 5, wherein an interface of the measure system is a web page.
9. A method for measuring critical dimensions of a mask design pattern, comprising:
setting up a server and a host, wherein the host comprises a measure system;
providing a security mechanism for ensuring that only the server can be connected to the host and control the measure system;
establishing a connection between the server and a remote terminal through the Internet; and
utilizing the remote terminal to login the server so as to transmit the mask design pattern to the host and remotely control the measure system to measure the critical dimensions of the mask design pattern through the server.
10. The method of claim 9, wherein the security mechanism is provided by a firewall.
11. The method of claim 9 further comprising:
providing a login system in the server; and
utilizing the login system for determining whether the remote terminal can login the server according to security rules;
wherein if login data inputted by the remote terminal into the login system conforms to the security rules, the login system allows the remote terminal to login the server.
12. The method of claim 9 further comprising:
setting up a database for storing the critical dimensions.
13. The method of claim 9, wherein an interface of the measure system is a web page.
14. A system for measuring critical dimensions of a mask design pattern, comprising:
a server;
a host coupled to the server through a security mechanism and having a measure system, wherein the measure system is utilized for measuring the critical dimensions of the mask design pattern and the security mechanism is utilized for ensuring that only the server can be connected to the host and control the measure system; and
a remote terminal coupled to the server through the Internet for transmitting the mask design pattern to the host and remotely controlling the measure system to measure the critical dimensions of the mask design pattern through the server.
15. The system of claim 14, wherein the security mechanism is a firewall.
16. The system of claim 14, wherein the server comprises:
a login system for determining whether the remote terminal can login the server according to security rules;
wherein if login data inputted by the remote terminal into the login system conforms to the security rules, the login system allows the remote terminal to login the server.
17. The system of claim 14 further comprising:
a database for storing the critical dimensions.
18. The system of claim 14, wherein an interface of the measure system is a web page.