1. A method for producing a low temperature cofired ceramics substrate structure comprising:
providing the ceramic substrate with the at least one contact element, wherein the at least one contact element has a first metallization (20) arranged on the ceramic substrate or in the ceramic substrate or on and in the ceramic substrate;
covering the first metallization (20) with a diffusion barrier layer (22) through printing or by jetting or dispensing; and,
forming the second metal layer (24) directly on the diffusion barrier layer (22)
without tempering said diffusion barrier layer before said forming the second metal layer on the diffusion barrier layer.
2. The method according to claim 1, wherein said forming the second metal layer (24) comprises
printing with a subsequent tempering step, or,
plating.
3. The method according to claim 1, further comprising applying the second metal layer (24) by jetting or dispensing a paste.
4. The method according to claim 1, further comprising carrying out a tempering step after said forming of the second metal layer (24).
5. A method for producing a low temperature cofired ceramics substrate structure comprising:
providing the ceramic substrate with the at least one contact element, wherein the at least one contact element has a first metallization (20) arranged on the ceramic substrate or in the ceramic substrate or on and in the ceramic substrate;
covering the first metallization (20) with a diffusion barrier layer (22) by printing or by jetting or dispensing a paste;
forming the second metal layer (24) directly on the diffusion barrier layer (22) by printing or plating and
without tempering said diffusion barrier layer before said forming the second metal layer on the diffusion barrier layer; and,
carrying out a tempering step after said forming of the second metal layer (24).
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An electron microscope, comprising:
an illuminating lens system that illuminates an electron beam that is emitted from an electron source onto a specimen as a planar illuminating electron beam having a two-dimensional spread;
an imaging lens system that projects and magnifies the reflecting electron beam emitted from the specimen to project and form a specimen image;
a beam separator that separates the illuminating electron beam from reflecting electron beam;
control means for controlling the reflecting electron beam so as to go straight through the beam separator, and the illuminating electron beam so as to keep a deflection angle of the illuminating electron beam which is made by the beam separator substantially constant;
wherein the beam separator is formed of an E\xd7B deflector that makes an electric field and a magnetic field orthogonal to each other and superimposed on one another, and the control means controls a voltage and a current which are supplied to the E\xd7B deflector so that a Wien condition by which the deflections caused by the electric field and the magnetic field cancel each other is met with respect to the reflecting electron beam while keeping the deflection angle with respect to the illuminating electron beam substantially constant;
a mirror electron microscope mode that magnifies and projects the mirror electron beam, and a low energy electron microscope mode that magnifies and projects the secondary electron beam or the backscattered electron beam; and
means for changing over the mirror electron microscope mode and the low energy electron microscope mode;
wherein the changeover from the mirror electron microscope mode to the low energy electron microscope mode is conducted by supplying a deflection voltage and a supply current which are obtained by multiplying a deflection voltage and a supply current of the E\xd7B deflector by a value of \u03b3 that is represented by the following expression
\u03b3
=
V
0
V
1
\u2062
2
1
+
V
1
V
0
at the same time as the changeover of the specimen supply voltage when it is assumed that an energy of the electron beam that is supplied to the E\xd7B deflector is eV0, and an energy of the outgoing electron beam that is supplied to the E\xd7B deflector in the low energy electron microscope mode is eV1.
2. An electron microscope, comprising:
electron source voltage applying means for applying an accelerating voltage to an electron source;
specimen voltage applying means for applying a specimen supply voltage to a stage that supports a specimen;
an illuminating lens system that illuminates an electron beam that is emitted from the electron source onto a specimen as a planar illuminating electron beam having a two-dimensional spread;
an imaging lens system that projects and magnifies the reflecting electron beam emitted from the specimen to project and form a specimen image;
a beam separator that separates the illuminating electron beam from the reflecting electron beam;
means for changing over the reflecting electron beam to mirror electrons that is returned back in the vicinity of the surface of the specimen without colliding with the specimen, and secondary electrons that are generated from the specimen or backscattered electrons;
control means for controlling the reflecting electron beam so as to go straight through the beam separator, and the illuminating electron beam so as to keep a deflection angle of the illuminating electron beam which is made by the beam separator substantially constant;
wherein the beam separator is formed of an E\xd7B deflector that makes an electric field and a magnetic field orthogonal to each other and superimposed on one another, and the control means controls a voltage and a current which are supplied to the E\xd7B deflector so that a Wien condition by which the deflections caused by the electric field and the magnetic field cancel each other is met with respect to the reflecting electron beam while keeping the deflection angle with respect to the illuminating electron beam substantially constant;
a mirror electron microscope mode that magnifies and projects the mirror electron beam, and a low energy electron microscope mode that magnifies and projects the secondary electron beam or the backscattered electron beam; and
means for changing over the mirror electron microscope mode and the low energy electron microscope mode;
wherein the changeover from the mirror electron microscope mode to the low energy electron microscope mode is conducted by supplying a deflection voltage and a supply current which are obtained by multiplying a deflection voltage and a supply current of the E\xd7B deflector by a value of \u03b3 that is represented by the following expression
\u03b3
=
V
0
V
1
\u2062
2
1
+
V
1
V
0
at the same time as the changeover of the specimen supply voltage when it is assumed that an energy of the electron beam that is supplied to the E\xd7B deflector is eV0, and an energy of the outgoing electron beam that is supplied to the E\xd7B deflector in the low energy electron microscope mode is eV1.
3. The electron microscope according to claim 1 or 2, wherein the changeover from the mirror electron microscope mode to the low energy electron microscope mode is conducted by setting the specimen supply voltage to a positive potential side of the electron source supply voltage.
4. An electron beam inspection system, comprising:
electron source voltage applying means for applying an accelerating voltage to an electron source;
specimen voltage applying means for applying a specimen supply voltage to a stage that supports a specimen;
an illuminating lens system that images the illuminating electron beam emitted from the electron source onto a focal plane of an objective lens by an illuminating lens to make a planar illuminating electron beam having a two-dimensional spread illuminate the specimen;
an imaging lens system that projects and magnifies the reflecting electron beam emitted from the specimen to project and form a specimen image;
a beam separator that separates the illuminating electron beam from the reflecting electron beam;
control means for controlling the reflecting electron beam so as to go straight through the beam separator, and the illuminating electron beam so as to keep a deflection angle of the illuminating electron beam which is made by the beam separator substantially constant;
image detecting means for sequentially illuminating the planar illuminating electron beam to a plurality of illuminating areas of a specimen surface to which a negative potential is applied, imaging the reflecting electron beam generated from the specimen, sequentially forming an magnified electron image of all or a part of the plurality of illuminating areas, and converting the magnified electron image into an electric image signal;
image processing means for detecting a pattern defect formed on the specimen on the basis of the image signals;
means for changing over the reflecting electron beam to mirror electrons that are returned back in the vicinity of the surface of the specimen without colliding with the specimen, and the secondary electrons or the backscattered electrons which are generated from the specimen with colliding the primary electron beam with the specimen by controlling the accelerating voltage and the specimen supply voltage;
a mirror electron microscope mode that magnifies and projects the mirror electrons, and a low energy electron microscope mode that detects, enlarges and projects the secondary electrons or the backscattered electrons; and
means for changing over the mirror electron microscope mode and the low energy electron microscope mode to detect a pattern defect formed in the specimen;
wherein the changeover from the mirror electron microscope mode to the low energy electron microscope mode is conducted by supplying a deflection voltage and a supply current which are obtained by multiplying a deflection voltage and a supply current of the E\xd7B deflector by a value of \u03b3 that is represented by the following expression
\u03b3
=
V
0
V
1
\u2062
2
1
+
V
1
V
0
at the same time as the changeover of the specimen supply voltage when it is assumed that an energy of the electron beam that is supplied to the E\xd7B deflector is eV0, and an energy of the outgoing electron beam that is supplied to the E\xd7B deflector in the low energy electron microscope mode is eV1.
5. The electron beam inspection system according to claim 4, wherein the beam separator is formed of an E\xd7B deflector that makes an electric field and a magnetic field orthogonal to each other and superimposed on one another, and the control means controls a voltage and a current which are supplied to the deflector so that a Wien condition by which the deflections caused by the electric field and the magnetic field cancel each other is met with respect to the reflecting electron beam while keeping the deflection angle with respect to the illuminating electron beam substantially constant.
6. The electron beam inspection system according to claim 4, wherein the image processing means compares the image signals related to the plurality of illuminating areas with each other, or compares the image signals with an image signal related to a desired inspection area of a specimen that is standard, which is stored in advance, to detect a pattern defect formed in the specimen and display the defect as an image.