1. A method for controlling an airflow device arranged for supplying or exhausting cooling air for a rack enclosure, the method comprising the steps of:
disposing an opening between an area inside the rack enclosure and an area outside the rack enclosure;
measuring a first temperature, a second temperature and a third temperature at locations in thermal communication with said opening, where the measured first temperature is affected by airflow through said opening, the airflow resulting from a pressure differential across said opening;
determining a direction of airflow though said opening from said temperature measurement, and
controlling the airflow device in response to said direction determining step; wherein a shunt tube is disposed in the opening, the first temperature is measured at a location inside the shunt tube, the second temperature is measured at a location outside the enclosure, the third temperature is measured at a location inside the rack enclosure, and wherein the direction of airflow is determined from the first, second and third temperatures measured.
2. A method as in claim 1 wherein the second temperature is measured at one end of the shunt tube.
3. A method as in claim 1 wherein the rack enclosure further comprises an intake plenum and exhaust plenum, and the shunt tube is disposed between the intake and exhaust plenums.
4. A method as in claim 1 wherein the direction of airflow is determined by comparing an average of the second and third temperatures with the first temperature.
5. A method for controlling an airflow device arranged for supplying or exhausting cooling air for a rack enclosure, the method comprising the steps of:
disposing an opening between an area inside the rack enclosure and an area outside the rack enclosure;
measuring a first temperature and a second temperature at locations in thermal communication with said opening, where the measured first temperature is affected by airflow through said opening, the airflow resulting from a pressure differential across said opening;
determining a direction of airflow though said opening from said temperature measurement, and
controlling the airflow device in response to said direction determining step, wherein the step of determining a direction of airflow further comprises measuring a second temperature at a second location adjacent the opening and determining the direction of airflow by comparing the first and second temperatures measured, wherein the direction of airflow is determined to be a first direction when the first temperature is less than the second temperature, and the direction of airflow is determined to be a second direction when the second temperature is less than the first temperature.
6. A method as in claim 5 wherein the enclosure further encloses a data processing system having a corresponding second air mover for providing exhaust air from the data processing system.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of forming a semiconductor device, comprising:
providing a drain electrode;
providing a source electrode;
depositing a channel contacting the drain electrode and the source electrode and including zinc-indium oxide having a single-phase crystalline state of ZnxIn2yOx+3y, wherein x and y are each independently in the range of about 1 to about 15;
providing a gate electrode; and
providing a gate dielectric positioned between the gate electrode and the channel.
2. The method of claim 1, wherein depositing a channel includes:
vaporizing a precursor composition; and
depositing the vaporized precursor composition using a physical vapor deposition technique.
3. The method of claim 2, wherein the physical vapor deposition technique includes one or more of dc reactive sputtering, rf sputtering, magnetron sputtering, and ion beam sputtering.
4. The method of claim 1, wherein depositing the channel includes depositing a precursor composition on the surface with an ink-jet deposition technique.
5. The method of claim 1, wherein depositing a channel includes:
providing a precursor composition including one or more zinc precursor compounds and indium precursor compounds and;
depositing the channel from the precursor composition.
6. The method of claim 1, including providing a substrate or substrate assembly; and
forming the semiconductor device on the substrate or substrate assembly.
7. A method of forming a semiconductor device, comprising:
providing a drain electrode;
providing a source electrode;
depositing a channel contacting the drain electrode and the source electrode and including zinc-indium oxide having a mixed-phase crystalline state formed from compounds selected from the group consisting of ZnO, ZnxIn2yOx+3y, In2O3, and mixtures thereof;
providing a gate electrode; and
providing a gate dielectric positioned between the gate electrode and the channel.
8. A method of forming a semiconductor device, comprising:
providing a drain electrode;
providing a source electrode;
depositing a channel contacting the drain electrode and the source electrode and including zinc-indium oxide having an amorphous form from compounds selected from the group consisting of ZnO, ZnxIn2yOx+3y, In2O3, and mixtures thereof;
providing a gate electrode; and
providing a gate dielectric positioned between the gate electrode and the channel.
9. A method of manufacturing a semiconductor device, comprising:
providing a drain electrode;
providing a source electrode;
step for providing a precursor composition including one or more zinc precursor compounds and indium precursor compounds;
step for depositing a channel including zinc-indium oxide from the precursor composition contacting the drain electrode and the source electrode;
providing a gate electrode; and
providing a gate dielectric positioned between the gate electrode and the channel.
10. The method of claim 9, wherein the step for depositing a channel includes:
step for vaporizing the precursor composition to form vaporized precursor composition; and
depositing the vaporized precursor composition using a physical vapor deposition technique.
11. The method of claim 10, wherein the physical vapor deposition technique includes one or more of dc reactive sputtering, rf sputtering, magnetron sputtering, and ion beam sputtering.
12. The method of claim 9, wherein the step for depositing the channel includes step for depositing the precursor composition with an ink-jet deposition technique.
13. A method of forming a channel, comprising:
providing a precursor composition including one or more zinc precursor compounds and indium precursor compounds; and
depositing the channel including zinc-indium oxide from the precursor composition to electrically couple a drain electrode and a source electrode.
14. The method of claim 13, wherein depositing the channel includes
vaporizing the precursor composition to form vaporized precursor composition; and
depositing the vaporized precursor composition between the drain electrode and the source electrode using a physical vapor deposition technique.
15. The method of claim 14, wherein the physical vapor deposition technique includes one or more of dc reactive sputtering, rf sputtering, magnetron sputtering, and ion beam sputtering.
16. A semiconductor device formed by steps, comprising:
providing a drain electrode;
providing a source electrode;
providing a precursor composition including one or more zinc precursor compounds and indium precursor compounds;
depositing a channel including zinc-indium oxide from the precursor composition to contact the drain electrode and the source electrode;
providing a gate electrode; and
providing a gate dielectric positioned between the gate electrode and the channel.
17. The semiconductor device of claim 16, wherein depositing the channel includes:
vaporizing the precursor composition to form vaporized precursor composition; and
depositing the vaporized precursor composition using a physical vapor deposition technique.
18. The semiconductor device of claim 17, wherein the physical vapor deposition technique includes one or more of dc reactive sputtering, rf sputtering, magnetron sputtering, and ion beam sputtering.
19. A method for operating a semiconductor device, comprising:
providing a semiconductor device that includes a drain electrode, a source electrode, a channel to electrically couple the drain electrode and the source electrode, wherein the channel includes zinc-indium oxide, a gate electrode, and a gate dielectric positioned between the gate electrode and the channel; and
applying a voltage to the gate electrode to effect a flow of electrons through zinc-indium oxide of the channel.
20. The method of claim 19, wherein applying a voltage includes using the semiconductor device as a switch in a display device.
21. The method of claim 19, wherein applying a voltage includes conducting electrons through a channel of zinc-indium oxide in a linear region of operation.