What is claimed is:
1. A polymer, comprising, repeat units derived from:
(a) at least 1 mole percent hexafluoropropylene;
(b) at least 1 mole percent total of one or more of tetrafluoroethylene, vinyl fluoride, trifluoroethylene, ethylene, chlorotrifluoroethylene, and vinylidene fluoride; and
(c) 0.03 to about 5 mole percent total of one or more of maleic anhydride, maleic acid, dichloromaleic anhydride or dichloromaleic acid.
2. The polymer as recited in claim 1 wherein said repeat units derived from hexafluoropropylene are at least about 30 mole percent of said repeat units.
3. The polymer as recited in claim 2 which is amorphous.
4. The polymer as recited in claim 1 wherein (b) is derived from tetrafluoroethylene only.
5. The polymer as recited in claim 1 wherein (b) is derived from vinylidene fluoride only.
6. The polymer as recited in claim 1 wherein (b) is derived from tetrafluoroethylene and vinylidene fluoride.
7. The polymer as recited in claim 1 additionally comprising one or more additional repeat units derived from 3,3,3-trifluoropropene, 2,3,3,3-tetrafluoropropene, 4-bromo-3,3,4,4-tetrafluoro-1-butene, CH2CHO(CO)R2 wherein R2 is perfluoro-n-alkyl containing 1 to 8 carbon atoms, CH2CHR3 wherein R3 is perfluoro-n-alkyl containing 1 to 8 carbon atoms, CH2CH(CO)OR4 wherein R4 is CnFxHy wherein xy 2n1 and n is 1 to 8, chlorotrifluoroethylene, CF2CFR5 wherein R5 is perfluoroalkyl optionally containing one or more of one or more ether groups, one cyano group, or one sulfonyl fluoride group, perfluoro(2-methylene-4-methyl-1,3-dioxolane), perfluoro(1,3-dioxole), a perfluoro(2,2-alkyl substitued-1,3-dioxole), 4,5-difluoro-2,2-bis(trifluoromethyl)-1,3-dioxole or FSO2CF2CF2OCF(CF3)CF2OCFCF2, F2CCF(CF2)pOCFCF2 wherein p is 1 or 2, and F2CCFOR7 wherein R7 is alkyl or halogen substituted alkyl containing 1 to 10 carbon atoms, and optionally containing one or more ether oxygen atoms between carbon atoms.
8. The polymer as recited in claim 7 wherein said additional repeat units are no more than about 10 mole percent each of said polymer, and the total amount of additional repeat units is less than about 15 mole percent, or the total amount of additional repeat units is less than about 15 mole percent.
9. The polymer as recited in claim 1 wherein (c) is about 0.1 to about 2 mole percent of said repeat units.
10. The polymer as recited in claim 1 which is a copolymer of: hexafluoropropylene, tetrafluoroethylene and maleic anhydride or maleic acid; hexafluoropropylene, tetrafluoroethylene, vinylidene fluoride and maleic anhydride or maleic acid; and hexafluoropropylene, vinylidene fluoride and maleic anhydride or maleic acid.
11. The polymer as recited in claim 1 wherein (c) is derived from maleic acid and is partially or completely in salt form.
12. The polymer as recited in claim 1 wherein (b) is derived from tetrafluoroethylene and vinyl fluoride.
13. The polymer as recited in claim 1 wherein (b) is derived from tetrafluoroethylene and ethylene.
14. The polymer as recited in claim 1 wherein (b) is derived from trifluoroethylene.
15. The polymer as recited in claim 1 wherein (b) is derived from tetrafluoroethylene and trifluoroethylene.
16. A polymer, comprising, repeat units derived from:
(a) at least 1 mole percent tetrafluoroethylene or chlorotrifluoroethylene;
(b) at least one mole percent of ethylene, a compound of the formula F2CCFOR1 wherein R1 is alkyl or halogen substituted alkyl containing 1 to 10 carbon atoms and optionally containing one or more ether oxygen atoms between perfluoroalkylene or perfluoroalkyl segments, perfluoro(2-methylene-4-methyl-1,3-dioxolane), F2CCF(CF2)pOCFCF2 wherein p is 1 or 2, and a compound of the formula
2
wherein R8 and R9 are each independently fluorine or perfluoroalkyl containing 1 to 4 carbon atoms; and
(c) 0.03 to about 10 mole percent of one or more maleic anhydride, maleic acid, dichloromaleic anhydride or dichloromaleic acid.
17. The polymer as recited in claim 16 wherein (b) is repeat units derived from F2CCFOR1, and R1 is perfluoro-n-alkyl.
18. The polymer as recited in claim 17 wherein R1 is trifluoromethyl, perfluoroethyl or perfluoropropyl.
19. The polymer as recited in claim 16 wherein (b) is repeat units derived from ethylene.
20. The polymer as recited in claim 16 wherein (c) is about 0.1 to about 2 mole percent of said repeat units.
21. The polymer as recited in claim 16 wherein (c) is derived from maleic acid and is partially or completely in salt form.
22. The polymer as recited in claim 16 which is a copolymer of: 30-98.95 mole percent tetrafluoroethylene, 1-69 mole percent of a perfluoro(alkyl vinyl ether) and 0.03 to 10 mole percent maleic acid or maleic anhydride; 90-99 mole percent tetrafluoroethylene, 1-9 mole percent perfluoro(propyl vinyl ether), 0.03-10 mole percent maleic anhydride or maleic acid; 30-68.95 mole percent tetrafluoroethylene, 30-70 mole percent ethylene and 0.1-10 mole percent maleic anhydride or maleic acid; or 5-50 mole percent tetrafluoroethylene, 40 to 95 mole percent 4,5-difluoro-2,2-bis(trifluoromethyl)-1,3-dioxolane and 0.05-5 maleic anhydride or maleic acid.
23. The polymer as recited in claim 16 wherein (b)is repeat units derived from (I) and R8 and R9 are both trifluoromethyl.
24. The polymer as recited in claim 16 additionally comprising one or more repeat units derived from vinyl fluoride, trifluoroethylene, 3,3,3-trifluoropropene, 2,3,3,3-tetrafluoropropene, 4-bromo-3,3,4,4-tetrafluoro- 1 -butene, CH2CHO(CO)R2 wherein R2 is perfluoro-n-alkyl containing 1 to 8 carbon atoms, CH2CHR3 wherein R3 is perfluoro-n-alkyl containing 1 to 8 carbon atoms, CH2CH(CO)OR4 wherein R4 is CnFxHy wherein xy2n1 and n is 1 to 8, chlorotrifluoroethylene, CF2CFR5 wherein R5 is perfluoroalkyl optionally containing one or more ether groups, one cyano group, or one sulfonyl group, or CF2CFOCF2CF(CF3)OCF2CF2SO2F.
25. A process for the production of maleic anhydride, maleic acid, dichloromaleic anhydride or dichloromaleic acid copolymers with fluoroolefins by free radical polymerization in an essentially nonaqueous polymerization system, wherein the improvement comprises, using as a solvent one or more of: a compound of the formula R6CO2H wherein R6 is perfluoroalkyl containing 1 to 6 carbon atoms, liquid or supercritical carbon dioxide, or liquid or supercritical hexafluoropropylene.
26. The process as recited in claim 25 wherein said solvent is R6CO2H.
27. The process as recited in claim 26 wherein R6 is trifluoromethyl.
28. The process as recited in claim 25 wherein said solvent is liquid or supercritical carbon dioxide.
29. The process as recited in claim 25 wherein said solvent is liquid or supercritical hexafluoropropylene.
30. The process as recited in claim 29 carried out at a temperature above 100 C.
31. A coated substrate in which the coating is selected from the group consisting of:
(a) a polymer, comprising, repeat units derived from:
(i) at least 1 mole percent hexafluoropropylene;
(ii) at least 1 mole percent total of one or more of tetrafluoroethylene, vinyl fluoride, trifluoroethylene, chlorotrifluoroethylene, ethylene, and vinylidene fluoride; and
(iii) 0.03 to about 5 mole percent total of one or more of maleic anhydride, maleic acid, dichloromaleic anhydride or dichloromaleic acid; and
(b) a polymer, comprising, repeat units derived from:
(i) at least 1 mole percent tetrafluoroethylene;
(ii) at least one mole percent of ethylene, a compound of the formula F2CCFOR1 wherein R1 is alkyl or halogen substituted alkyl containing 1 to 10 carbon atoms and optionally containing one or more ether oxygen atoms between perfluoroalkylene or perfluoroalkyl segments, perfluoro(2-metylene-4-methyl-1,3-dioxolane), F2CCF(CF2)pOCFCF2 wherein p is 1 or 2, and a compound of the formula
3
wherein R8 and R9 are each independently fluorine or perfluoroalkyl containing 1 to 4 carbon atoms; and
(iii) 0.03 to about 10 mole percent of one or more of maleic anhydride, maleic acid, dichloromaleic anhydride or dichloromaleic acid.
32. A composite structure comprising the coated substrate of claim 31 plus an additional substrate adhered to the coating on the first mentioned substrate.
33. A melt blend of thermoplastic polymer and a polymer selected from the group consisting of:
(a) a polymer, comprising, repeat units derived from:
(i) at least 1 mole percent hexafluoropropylene;
(ii) at least 1 mole percent total of one or more of tetrafluoroethylene, vinyl fluoride, trifluoroethylene, chlorotrifluoroethylene, ethylene, and vinylidene fluoride; and
(iii) 0.03 to about 5 mole percent total of one or more of maleic anhydride, maleic acid, dichloromaleic anhydride or dichloromaleic acid; and
(b) a polymer, comprising, repeat units derived from:
(i) at least 1 mole percent tetrafluoroethylene or chlorotrifluoroethylene;
(ii) at least one mole percent of ethylene, a compound of the formula F2CCFOR1 wherein R1 is alkyl or halogen substituted alkyl containing 1 to 10 carbon atoms and optionally containing one or more ether oxygen atoms between perfluoroalkylene or perfluoroalkyl segments, perfluoro(2-metylene-4-methyl-1,3-dioxolane), F2CCF(CF2)pOCFCF2 wherein p is 1 or 2, and a compound of the formula
4
wherein R8 and R9 are each independently fluorine or perfluoroalkyl containing 1 to 4 carbon atoms; and
(iii) 0.03 to about 10 mole percent of one or more of maleic anhydride, maleic acid, dichloromaleic anhydride or dichloromaleic acid.
34. A polymer, comprising, repeat units derived from:
(a) at least 1 mole percent vinyl fluoride, vinylidene fluoride, or chlorotrifluoroethylene; and
(b) 0.03 to about 10 mole percent of one or more of maleic anhydride, maleic acid, dichloromaleic anhydride or dichloromaleic acid.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A circuit for detecting skew of a transistor comprising:
a linear voltage generating unit for outputting a linear voltage by using a first supply voltage;
a first attenuation unit for reducing variation width of the linear voltage according to the performance of the transistor;
a saturation voltage generating unit for outputting a saturation voltage by using a second supply voltage; and
a comparison unit for comparing an output of the first attenuation unit and the saturation voltage.
2. The circuit as recited in claim 1, wherein a level of the first supply voltage is lower than that of the second supply voltage.
3. The circuit as recited in claim 2, wherein the linear voltage generating unit includes a plurality of switching devices connected to each other in series, upper switching devices among the plurality of switching devices operating in a linear region and lower switching devices acting in a saturation region.
4. The circuit as recited in claim 3, wherein the linear voltage generating unit has:
an upper switching device having a drain coupled with the first supply voltage and a gate receiving the second supply voltage; and
a lower switching device having a drain connected to a source of the upper switching device, a gate receiving the first supply voltage and a source coupled with a third supply voltage.
5. The circuit as recited in claim 4, wherein the upper and the lower switching devices are formed with NMOS transistors.
6. The circuit as recited in claim 4, wherein the upper and the lower switching devices are formed with PMOS transistors.
7. The circuit as recited in claim 2, wherein the saturation voltage generating unit includes a multiplicity of switching devices connected to each other in series, all of the switching devices operating in a saturation region.
8. The circuit as recited in claim 7, wherein the saturation voltage generating unit has:
an upper switching device having a drain coupled with the second supply voltage and a gate receiving the second supply voltage; and
a lower switching device having a drain connected to a source of the upper switching device, a gate receiving the first supply voltage and a source coupled with a third supply voltage.
9. The circuit as recited in claim 8, wherein the upper and the lower switching devices are formed with NMOS transistors.
10. The circuit as recited in claim 8, wherein the upper and the lower switching devices are formed with PMOS transistors.
11. The circuit as recited in claim 3, wherein the first attenuation unit is an operational amplifier whose inverting node is coupled with the linear voltage and non-inverting node receives the third supply voltage and which employs a resistor having a certain resistance between an output node and the inverting node.
12. The circuit as recited in claim 3, further comprising:
a voltage adjusting unit for adjusting the output of the first attenuation unit to a certain voltage level so as to easily compare said output with the saturation voltage.
13. The circuit as recited in claim 12, wherein the voltage adjusting unit is formed with an operational amplifier having a non-inverting node connected to a central part of a plurality of resistors connected to each other in series and an inverting node coupled with the output of the first attenuation unit.
14. The circuit as recited in claim 3, further comprising:
a second attenuation unit connected to an output node of the saturation voltage generating unit so as to achieve precise comparison at the comparison unit.
15. A circuit for detecting skew of a transistor comprising:
a linear voltage generating unit for outputting a linear voltage by using a first supply voltage;
a first attenuation unit for reducing variation width of the linear voltage according to the performance of the transistor;
a saturation voltage generating unit for outputting a saturation voltage by using a second supply voltage whose level is higher than that of the first supply voltage;
a voltage adjusting unit for adjusting an output of the first attenuation unit to a certain voltage level so as to easily compare said output with the saturation voltage; and
a comparison unit for comparing an output of the voltage adjusting unit and the saturation voltage.
16. The circuit as recited in claim 15, wherein the linear voltage generating unit includes:
an upper NMOS transistor having a drain coupled with the first supply voltage and a gate receiving the second supply voltage, and a lower NMOS transistor having a drain connected to a source of the upper NMOS transistor, a gate receiving the first supply voltage and a source coupled with a ground voltage; and
the saturation voltage generating unit includes:
an upper NMOS transistor having a drain coupled with the second supply voltage and a gate receiving the second supply voltage, and a lower NMOS transistor having a drain connected to a source of the upper NMOS transistor, a gate receiving the first supply voltage and a source coupled with the ground voltage.
17. The circuit as recited in claim 16, wherein the first attenuation unit is an operational amplifier whose inverting node is coupled with the linear voltage and non-inverting node receives the ground voltage and which employs a resistor having a certain resistance between an output node and the inverting node.
18. A method for detecting skew of transistor, which comprises of the steps of:
generating a linear voltage by using a first supply voltage;
reducing variation width of the linear voltage according to the performance of the transistor, thereby outputting an attenuated linear voltage;
producing a saturation voltage by using a second supply voltage; and
comparing the attenuated linear voltage and the saturation voltage.