1. A semiconductor memory device comprising:
a first memory cell;
a second memory cell adjacent to the first memory cell;
a first word line coupled to the first memory cell; and
a second word line coupled to the second memory cell,
wherein when data is read from the first memory cell,
a first voltage and a second voltage different from the first voltage are applied to the first word line, and
a voltage applied to the second word line changes a first number of times while the first voltage is applied to the first word line, and the voltage applied to the second word line changes a second number of times different from the first number of times while the second voltage is applied to the first word line.
2. The device according to claim 1, wherein the first voltage is lower than the second voltage, and
the first number of times is larger than the second number of times.
3. The device according to claim 1, wherein the second voltage is lower than the first voltage, and
the second number of times is larger than the first number of times.
4. The device according to claim 1, further comprising:
a third memory cell coupled to the first word line;
a fourth memory cell adjacent to the third memory cell, and
the third memory cell being coupled to the second word line,
wherein when the data held in the first memory cell is read, data held in the third memory cell is also read,
data read from the first memory cell at a time when the voltage applied to the second word line is changed a third number of times is fetched in a sense amplifier,
data read from the third memory cell at a time when the voltage applied to the second word line is changed a fourth number of times is fetched in the sense amplifier, and
the third number of times is different from the fourth number of times.
5. The device according to claim 4, wherein data is read from the second and fourth memory cells before the first and second voltages are applied to the first word line,
the third number of times depends on the data read from the second memory cell, and
the fourth number of times depends on the data read from the fourth memory cell.
6. The device according to claim 1, wherein in a program-verification operation of the first memory cell,
a voltage applied to the first word line and a voltage applied to the second word line are changed more than once.
7. The device according to claim 6, wherein in the program-verification operation, the voltages applied to the first word line and the second word line are changed the same number of times.
8. The device according to claim 7, wherein in the program-verification operation, at a time, the voltage applied to the second word line is higher than the voltage applied to the first word line.
9. The device according to claim 8, further comprising:
a third memory cell adjacent to the second memory cell; and
a third word line coupled to the third memory cell,
wherein in the program-verification operation of the first memory cell,
a fifth voltage is applied to the third word line, and a maximum voltage applied to the second word line is less than or equal to the fifth voltage.
10. The device according to claim 1, wherein a data read operation of the first memory cell includes a first read operation and a second read operation,
in the first read operation, a third voltage lower than the first voltage and a fourth voltage lower than the second voltage are applied to the first word line and a constant voltage is applied to the second word line, and
in the second read operation, the first and second voltages are applied to the first word line and the voltage of the second word line is changed.
11. The device according to claim 1, further comprising:
a third memory cell; and
a third word line coupled to the third memory cell,
wherein the first word line is arranged between the second word line and the third word line,
data is read from the second and third memory cells before the first and second voltages are applied to the first word line, and
a voltage applied to the third word line changes a third number of times different from the first number of times and the second number of times while the first voltage is applied to the first word line.
12. The device according to claim 11, wherein the first voltage is for determining whether a threshold voltage of the first memory cell is in an erase level.
13. The device according to claim 1, wherein the first and second word lines are stacked, and
the voltage of the second word line depends on a layer position in which the second word line is provided.
14. The device according to claim 1, further comprising:
a bit line electrically coupled to the second memory cell;
a sense amplifier coupled to the sense amplifier;
a first block including the first and second memory cells; and
a second block discharging the bit line,
wherein the first block is arranged between the sense amplifier and the second block, and
the bit line is discharged by the sense amplifier and the second block after a data read operation.
15. The device according to claim 1, wherein when a threshold level of the second memory cell is higher than that of the first memory cell, the voltage of the second word line is controlled to correct a threshold voltage of the first memory cell.
16. The device according to claim 15, wherein when the threshold level of the second memory cell is the same as that of the first memory cell, the voltage of the second word line is controlled to correct the threshold voltage of the first memory cell.
17. A semiconductor memory device comprising:
a first memory cell;
a second memory cell coupled to the first memory cell;
a first word line coupled to the first memory cell; and
a second word line coupled to the second memory cell,
wherein in a program-verification operation of the first memory cell,
a voltage applied to the first word line changes a first number of times, and a voltage applied to the second word line changes a second number of times.
18. The device according to claim 17, wherein the first number of times is the same as the second number of times.
19. The device according to claim 18, wherein at a time, the voltage of the second word line is higher than the voltage of the first word line.
20. The device according to claim 17, wherein when data is read from the first memory cell,
a second voltage and a third voltage different from the second voltage are applied to the first word line, and
the voltage applied to the second word line changes a third number of times while the second voltage is applied to the first word line, and the voltage applied to the second word line changes a fourth number of times different from the third number of times while the third voltage is applied to the first word line.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A system for controlling movement of an object, comprising:
a first magnetic field emission structure associated with a first object, said first magnetic field emission structure having first field emission properties in accordance with a first code, said first object having a first movement in accordance with a first movement path function; and
a second magnetic field emission structure associated with a second object, said second magnetic field emission structure having second field emission properties in accordance with a second code, said first magnetic field emission structure and said second field emission structure controlling a second movement of at least one of said first object or said second object, said first code and said second code corresponding to a spatial force function, said first code corresponding to a code modulo of said first magnetic field emission structure and said second code corresponding to a code modulo of said second magnetic field emission structure, said first code and said second code defining a peak spatial force corresponding to substantial alignment of said code modulo of said first magnetic field emission structure with said code modulo of said second magnetic field emission structure, said first code and said second code also defining a plurality of off peak spatial forces corresponding to a plurality of different misalignments of said code modulo of said first magnetic field emission structure and said code modulo of said second magnetic field emission structure, said plurality of off peak spatial forces having a largest off peak spatial force, said largest off peak spatial force being less than half of said peak spatial force.
2. The system of claim 1, wherein said second object has a third movement in accordance with a second movement path function.
3. The system of claim 1, further comprising:
a control system that varies said desired spatial force function.
4. The system of claim 1, wherein said first magnetic field emission structure is one of a minor image of said second field emission structure or a duplicate of said second field emission structure.
5. The system of claim 1, wherein said first movement path function is one of a one-dimensional movement path function, a two-dimensional movement path function or a three-dimensional movement path function.
6. The system of claim 1, wherein said first movement path function is at least one of a linear movement path function, a non-linear movement path function, a rotational movement path function, a cylindrical movement path function, or a spherical movement path function.
7. The system of claim 1, wherein said first movement path function defines said first movement versus time for said first field emission structure.
8. The system of claim 1, wherein at least one of said first movement or said second movement comprises at least one of a forward movement, a backward movement, an upward movement, a downward movement, a left movement, a right movement, a yaw, a pitch, or a roll.
9. The system of claim 1, wherein said first movement path function defines a movement vector having a direction and amplitude that varies over time.
10. A method for controlling movement of an object, comprising:
moving a first magnetic field emission structure in accordance with a first movement path function, said first magnetic field emission structure having first field emission properties in accordance with a first code and being associated with a first object; and
controlling a movement of at least one of said first object or a second object, said second object being associated with a second magnetic field emission structure, said second magnetic field emission structure having second field emission properties in accordance with a second code, said second field emission structure and said moving of said first magnetic field emission structure controlling said movement, said first code and said second code corresponding to a spatial force function, said first code corresponding to a code modulo of said first magnetic field emission structure and said second code corresponding to a code modulo of said second magnetic field emission structure, said first code and said second code defining a peak spatial force corresponding to substantial alignment of said code modulo of said first magnetic field emission structure with said code modulo of said second magnetic field emission structure, said first code and said second code also defining a plurality of off peak spatial forces corresponding to a plurality of different misalignments of said code modulo of said first magnetic field emission structure and said code modulo of said second magnetic field emission structure, said plurality of off peak spatial forces having a largest off peak spatial force, said largest off peak spatial force being less than half of said peak spatial force.
11. The method of claim 10, further comprising: moving said second object in accordance with a second movement path function, said moving of said second magnetic field emission structure also controlling said movement.
12. The method of claim 10, further comprising:
varying said desired spatial force function.
13. The method of claim 10, wherein said first magnetic field emission structure is one of a minor image of said second field emission structure or a duplicate of said second field emission structure.
14. The method of claim 10, wherein said first movement path function is one of a one-dimensional movement path function, a two-dimensional movement path function or a three-dimensional movement path function.
15. The method of claim 10, wherein said first movement path function is at least one of a linear movement path function, a non-linear movement path function, a rotational movement path function, a cylindrical movement path function, or a spherical movement path function.
16. The method of claim 10, wherein said movement comprises at least one of a forward movement, a backward movement, an upward movement, a downward movement, a left movement, a right movement, a yaw, a pitch, or a roll.
17. The method of claim 10, wherein said first movement path function defines a movement vector having a direction and amplitude that varies over time.
18. A method for controlling movement of an object, said method comprising the steps of:
associating a first field emission structure with a first object, said first field emission structure being accordance with a first code;
associating a second field emission structure with a second object, said second field emission structure being accordance with a second code; and
controlling a movement of at least one of said first object or said second object based upon at least one movement path function, said first code and said second code corresponding to a spatial force function, said first code corresponding to a code modulo of said first magnetic field emission structure and said second code corresponding to a code modulo of said second magnetic field emission structure, said first code and said second code defining a peak spatial force corresponding to substantial alignment of said code modulo of said first magnetic field emission structure with said code modulo of said second magnetic field emission structure, said first code and said second code also defining a plurality of off peak spatial forces corresponding to a plurality of different misalignments of said code modulo of said first magnetic field emission structure and said code modulo of said second magnetic field emission structure, said plurality of off peak spatial forces having a largest off peak spatial force, said largest off peak spatial force being less than half of said peak spatial force.