1. A method for forming a replacement metal gate (RMG) of a semiconductor device, the method comprising:
providing a set of field effect transistors (FET) formed over a substrate, each of the set of FETs having a recess formed therein;
forming a high-k layer over the semiconductor device and within each recess;
forming a barrier layer over the high-k layer;
forming an organic dielectric layer (ODL) within each recess;
recessing the ODL to a desired height within each recess;
removing the high-k layer and the barrier layer from atop the semiconductor device selective to the ODL within each recess;
removing the ODL from within each recess;
selectively growing a work-function metal (WFM) within one of the recesses; and
forming a metal material within each recess.
2. The method according to claim 1, further comprising forming a second barrier layer within each recess after the WFM is selectively grown within the one of the recesses.
3. The method according to claim 1, wherein the high-k layer comprises hafnium oxide, and wherein the barrier layer comprises titanium nitride.
4. The method according to claim 1, further comprising forming a metal layer over the barrier layer.
5. The method according to claim 4, further comprising removing the metal layer from another one of the recesses after the ODL is removed from each of the recesses.
6. The method according to claim 4, the metal layer comprising a single element metal.
7. The method according to claim 5, the set of FETs comprising a p-channel FET and an n-channel FET, wherein the one of the recesses is formed within the n-channel FET, and wherein the another one of the recesses is formed in the p-channel FET.
8. The method according to claim 1, further comprising forming a set of spacers formed over the substrate, wherein each recess is formed between each of the set of spacers.
9. A method for selectively growing a work-function metal (WFM) within a replacement metal gate (RMG) of a semiconductor device, the method comprising:
providing a p-channel field effect transistor (p-FET) and an n-channel field effect transistor (n-FET) formed over a substrate, the p-FET and the n-FET each having a recess formed therein;
forming a high-k layer over the semiconductor device and within each recess;
forming a barrier layer over the high-k layer;
forming an organic dielectric layer (ODL) within each recess;
recessing the ODL to a desired height within each recess;
removing the high-k layer and the barrier layer from atop the semiconductor device selective to the ODL within each recess;
removing the ODL from within each recess; and
selectively growing a work-function metal (WFM) within one of the recesses.
10. The method according to claim 9, further comprising:
forming a second barrier layer within each recess after the WFM is selectively grown within the recess of the n-FET; and
forming a metal material within each recess.
11. The method according to claim 9, wherein the high-k layer comprises hafnium oxide, and wherein the barrier layer comprises titanium nitride.
12. The method according to claim 9, further comprising forming a metal layer over the barrier layer.
13. The method according to claim 12, further comprising removing the metal layer from the recess of the p-FET after the ODL is removed from within each recess.
14. The method according to claim 12, the metal layer comprising a single element metal.
15. The method according to claim 9, further comprising forming a set of spacers over the substrate, wherein each recess is formed between each of the set of spacers.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An optically transparent, electrically conductive hybrid film consisting essentially of:
a carbon nanotube (CNT) network, and
a population of indium tin oxide particles distributed throughout the carbon nanotube network to provide a conductive transparent nanoscale hybrid film,
wherein the hybrid film has a surface resistance that is less than 106 Ohmsquare and the optical transparency of the hybrid film is greater than about 70%,
wherein the hybrid film is prepared by the process comprising
providing a first suspension of carbon nanotubes in a first solvent;
providing a second suspension of indium tin oxide particles in a second solvent;
applying the first suspension of carbon nanotubes to a substrate to form a carbon nanotube network;
applying the second suspension of indium tin oxide particles to the substrate; and
repeating said applying first suspension and said applying the second suspension to form a population of indium tin oxide particles distributed throughout the carbon nanotube network,
wherein the carbon nanotubes in the first suspension and the indium tin oxide particles in the second suspension carry opposite electrical charge.
2. The hybrid film of claim 1, wherein the carbon nanotubes are chemically derivatized.
3. The hybrid film of claim 1, wherein the indium tin oxide particles are pristine or chemically derivatized.
4. The hybrid film of claim 1, further comprising:
a coating of colloidal transparent conductive inorganic-disposed on the upper surface of the hybrid film, said colloidal transparent conductive nanoparticles having a particle size less than the indium tin oxide particles.
5. The hybrid film of claim 4, wherein the RMS surface roughness of the hybrid film is less than about 2 nm.
6. The hybrid film of claim 1, wherein the indium tin oxide particles have an aspect ratio of about 1 to about 5.
7. The hybrid film of claim 1, wherein the indium tin oxide particles are spherical, oblong, prismatic, ellipsoidal, rods, and irregularly shaped.
8. The hybrid film of claim 1, wherein the optical transparency of the hybrid film is between about 75-95% and the surface resistance of the hybrid film is about 10-2000 ohmssquare.
9. The hybrid film of claim 1, wherein the ratio of the amount of CNT:indium tin oxide particles range from about 10:90 to about 90:10 by weight.
10. The hybrid film of claim 1, wherein the thickness of the hybrid film range from about 2 nm to about 100 nm.
11. The hybrid film of claim 1, wherein the surface coverage of the hybrid film is greater than about 10%.
12. A hybrid film of claim 1, wherein the hybrid film further comprises a coating of the colloidal transparent conductive inorganic nanoparticles disposed on the upper surface of the hybrid film.
13. The hybrid film of claim 1, wherein the hybrid film has a surface resistance that is less than 2000 Ohmsquare.
14. The hybrid film of claim 1, wherein the indium tin oxide particles are in the size range of about 2 nm-100 nm.
15. The hybrid film of claim 1, wherein the carbon nanotubes are single walled carbon nanotubes.
16. A method of preparing a hybrid film, the method comprising:
providing a first suspension of carbon nanotubes in a first solvent;
providing a second suspension of indium tin oxide particles in a second solvent;
applying the first suspension of carbon nanotubes to a substrate to form a carbon nanotube network; and
applying the second suspension of indium tin oxide particles to the substrate
repeating said applying the first suspension and said applying the second suspension to form a population of indium tin oxide particles distributed throughout the carbon nanotube network,
wherein the carbon nanotubes in the first suspension and the indium tin oxide particles in the second suspension are oppositely charged; and
wherein the hybrid film has a surface resistance that is less than 106 Ohmsquare and the optical transparency of the hybrid film is greater than about 70%.
17. The method of claim 16, wherein the second suspension is applied after deposition of the first suspension.
18. The method of claim 16, further comprising applying a suspension of colloidal transparent conductive inorganic nanoparticles on the upper surface of the hybrid film, said colloidal transparent conductive nanoparticles having a particle size less than the indium tin oxide particles.
19. A method of preparing a hybrid film, the method comprising:
providing a first suspension of carbon nanotubes in a first solvent;
providing a second suspension of indium tin oxide particles in a second solvent;
providing a third suspension or solution of a binder material capable of attracting the carbon nanotubes and indium tin oxide particles;
applying the first suspension of carbon nanotubes to a substrate to form a carbon nanotube network; and
applying the second suspension of indium tin oxide particles;
applying the third suspension or solution of a binder material between said applying the first suspension of carbon nanotubes and said applying the second suspension of indium tin oxide particles;
repeating said applying the first suspension, said applying the second suspension, and said applying the third suspension to form a population of indium tin oxide particles distributed throughout the carbon nanotube network; and
rinsing away the binder material;
wherein the carbon nanotubes in the first suspension and the indium tin oxide particles in the second suspension carry the same electrical charge and the binder material in the third suspension or solution carry opposite electrical charge from the electrical charges of the carbon nanotubes in the first suspension and the indium tin oxide particles in the second suspension; and
wherein the hybrid film has a surface resistance that is less than 106 Ohmsquare and the optical transparency of the hybrid film is greater than about 70%.
20. The method of claim 19, further comprising applying a suspension of colloidal transparent conductive inorganic nanoparticles on the upper surface of the hybrid film, said colloidal transparent conductive nanoparticles having a particle size less than the indium tin oxide particles.
21. An optically transparent, electrically conductive hybrid film consisting essentially of:
a carbon nanotube (CNT) network, and
a population of indium tin oxide particles distributed throughout the carbon nanotube network to provide a conductive transparent nanoscale hybrid film,
wherein the hybrid film has a surface resistance that is less than 106 Ohmsquare and the optical transparency of the hybrid film is greater than about 70%,
wherein the hybrid film is prepared by the process comprising
providing a first suspension of carbon nanotubes in a first solvent;
providing a second suspension of indium tin oxide particles in a second solvent;
providing a third suspension or solution of a binder material capable of attracting the carbon nanotubes and the indium tin oxide particles;
applying the first suspension of carbon nanotubes to a substrate to form a carbon nanotube network; and
applying the second suspension of indium tin oxide particles,
applying the third suspension or solution of a binder material between said applying the first suspension of carbon nanotubes and said applying the second suspension of indium tin oxide particles;
repeating said applying the first suspension, said applying the second suspension, and said applying the third suspension to form a population of indium tin oxide particles distributed throughout the carbon nanotube network; and
rinsing away the binder material,
wherein the carbon nanotubes in the first suspension and -indium tin oxide particles in the second suspension carry the same electrical charge and the binder material in the third suspension or solution carry opposite electric charge from the electric charges of the carbon nanotubes in the first suspension and the indium tin oxide particles in the second suspension.
22. A hybrid film of claim 21, wherein the hybrid film further comprises a coating of the colloidal transparent conductive inorganic nanoparticles disposed on the upper surface of the hybrid film.
23. The hybrid film of claim 21, wherein the indium tin oxide particles are in the size range of about 2 nm-100 nm.
24. The hybrid film of claim 21, wherein the carbon nanotubes are single walled carbon nanotubes.
25. An optically transparent, electrically conductive hybrid film consisting essentially of:
a carbon nanotube (CNT) network, and
a population of indium tin oxide particles distributed throughout the carbon nanotube network to provide a conductive transparent nanoscale hybrid film,
wherein the optical transparency of the hybrid film is between about 75-95% and the surface resistance of the hybrid film is about 10-2000 ohmssquare;
wherein the hybrid film is prepared by the process comprising
providing a first suspension of carbon nanotubes in a first solvent;
providing a second suspension of indium tin oxide particles in a second solvent;
applying the first suspension of carbon nanotubes to a substrate to form a carbon nanotube network;
applying the second suspension of indium tin oxide particles; and
repeating said applying first suspension and said applying the second suspension to form a population of indium tin oxide particles distributed throughout the carbon nanotube network,
wherein the carbon nanotubes in the first suspension and indium tin oxide particles in the second suspension carry opposite electrical charge.
26. The hybrid film of claim 25, wherein the indium tin oxide particles have an aspect ratio of about 1 to about 5.
27. The hybrid film of claim 25, wherein the indium tin oxide particles are spherical, oblong, prismatic, ellipsoidal, rods, and irregularly shaped.