1. A measuring method comprising:
a step of producing a sample by thinning an object including a crystal portion;
a step of irradiating an electron beam to the sample and narrowing, to an arbitrary amount, an electron beam which is included in a transmitted electron beam transmitted through the sample and which is diffracted by the crystal portion, to thereby obtain electron beam imaging from the transmitted electron beam; and
a step of comparing, in the electron beam imaging, the width of grating stripes obtained from the crystal portion with the width of an arbitrary portion.
2. The measuring method described in claim 1,
wherein, in the step of producing the sample,
the object including the crystal portion is thinned by irradiation of an FIB.
3. The measuring method described in claim 1,
characterized in that, in the step of obtaining the electron beam imaging,
the step is performed by using a device which detects the electron beam, and
that a diaphragm provided between the sample and the device which detects the electron beam is made continuously variable,
to thereby narrow, to the arbitrary amount, the electron beam diffracted by the crystal portion.
4. The measuring method described in claim 1,
characterized in that, in the step of comparing, in the electron beam imaging, the width of grating stripes obtained from the crystal portion with the width of an arbitrary portion,
the ratio between the width of the grating stripes and the width of the arbitrary portion in the electron beam imaging is further obtained, and
that the actual width of the arbitrary portion is obtained from a grating constant corresponding to the actual grating stripes and from the ratio.
5. A measuring apparatus comprising:
an FIB irradiation device for irradiating an FIB to a measured object from one angle;
an electron beam irradiation device for irradiating an electron beam to the measured object from another angle;
an electron beam detecting device for detecting the electron beam transmitted through the measured object; and
an electron beam diaphragm provided between the electron beam detecting device and the measured object and capable of adjusting an opening through which the electron beam passes.
6. The measuring apparatus described in claim 5,
characterized in that the one angle is in the vertical direction, and
that the another angle is in the horizontal direction.
7. The measuring apparatus described in claim 5,
characterized in that the one angle is in the horizontal direction, and
that the another angle is in the vertical direction.
8. The measuring apparatus described in claim 5,
characterized in that the diaphragm is formed by superimposing two plates each including a first opening at a central portion thereof such that the first opening included in one of the plates and the first opening included in the other one of the plates face each other, and
that the size of a second opening obtained by superimposing the first opening of the one of the plates and the first opening of the other one of the plates is adjusted by sliding the one of the plates with respect to the other one of the plates.
9. The measuring apparatus described in claim 5,
characterized in that the diaphragm is formed by disposing eight rectangular plates each including a first opening at a central portion thereof such that one rectangular plate of the eight rectangular plates is disposed at an angle of 0 degree and the other rectangular plates are sequentially superimposed each with an angle of 45 degrees, with the first openings partially overlapped with one another, and
that the eight rectangular plates are slid by an equal amount along the respective disposition angles thereof with respect to a second opening formed by a common portion of the first openings of the eight rectangular plates, to thereby adjust the size of the second opening.
10. A semiconductor device formed on a semiconductor substrate comprising:
a circuit element for forming a semiconductor circuit,
a measurement element used in a measurement, and
a cutting region for separating the semiconductor device from the semiconductor substrate,
wherein the circuit element and the measurement element are the same in the cross-sectional structure,
wherein the measurement element is provided in the cutting region at a position where the measurement element is cut when the semiconductor device is separating from the semiconductor substrate,
wherein a cut surface of the measurement element is used in the measurement.
11. The semiconductor device described in claim 10,
characterized in that the circuit element and the measurement element are a MOS transistor.
12. A semiconductor device formed on a semiconductor substrate comprising:
a circuit element for forming a semiconductor circuit,
a measurement element used in a measurement, and
a cutting region for separating the semiconductor device,
wherein the circuit element and the measurement element are the same in a part of the cross-sectional structure,
wherein the measurement element is provided in the cutting region at a position where the measurement element is cut when the semiconductor device is separated from the semiconductor substrate,
wherein a cut surface of the measurement element is used in the measurement.
13. The semiconductor device described in claim 12,
characterized in that the circuit element is a MOS transistor, and the measurement element is a gate electrode portion of the MOS transistor.
14. A semiconductor device formed on a semiconductor substrate comprising:
an insulation element for electrically separating circuit elements which form semiconductor circuits,
a measurement element used in a measurement, and
a cutting region for separating the semiconductor device from semiconductor substrate,
wherein characterized in that the measurement element is the same as the insulation element in the cross-sectional structure,
wherein the measurement element is provided in the cutting region at a position where the measurement element is cut when the semiconductor device is separated from the semiconductor substrate,
wherein a cut surface of the measurement element is used in the measurement.
15. The semiconductor device described in claim 14,
characterized in that the insulation element and the measurement element are an element for electrically insulating MOS transistors.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for a first device in a first local area network (LAN) to communicate with a second device in a second LAN over a public network that couples the first and the second LANs, the method comprising:
discovering a first Universal Plug and Play (UPnP) enabled router in the first LAN with a public network address;
configuring a mapping table of the first UPnP enabled router to associate at least a first port number to the first device;
establishing a secondary communication connection to the second device over a a secondary communication channel to perform at least one of following:
to send the first public network address and at least the first port number; and
to receive a second public network address and at least a second port number associated to the second device; and
establishing a network connection to the second device over the public computer network using the second public network address and at least the second port number to exchange data packets with the second devices.
2. The method of claim 1, wherein the first device is a control point in the first UPnP LAN.
3. The method of claim 2, wherein said discovering a first UPnP enabled router comprises one of:
learning of the first UPnP enabled router because the first UPnP enabled router responded to discovery messages from the first device searching for the first UPnP enabled router; and
learning of the first UPnP enabled router because the first UPnP enabled router sent notify messages advertising itself.
4. The method of claim 3, wherein the second public network address is that of a second UPnP enabled router in the second LAN.
5. The method of claim 1, wherein the first LAN is a wired LAN and the secondary communication channel is a public switched telephone network (PSTN).
6. The method of claim 1, wherein the first LAN is a wireless LAN and the secondary communication channel is a mobile phone network.
7. The method of claim 1, wherein the secondary communication channel is selected from the group consisting of a public switched telephone network, a mobile telephone network, a conventional VoIP communication network, a digital video channel, a satellite communication channel, and a regional wireless data channel.