What is claimed is:
1. A valve drive unit for driving a valve having a valve body comprising:
an input shaft;
an external gear eccentrically and wobbly rotatable around the input shaft;
an internal gear engaged with the external gear; and
a carrier being able to absorb a wobbling ingredient of the external gear, wherein one of the internal gear and the carrier is able to fixed and the other is able to coupled to the valve body, as to eccentric wobbling rotational resistance of the external gear, two types of the valve drive units are prepared, one type of which has a first resistance against reverse torque from the valve body to the external gear, and the other type of which has a second resistance being smaller than the first resistance, and one type of the valve drive units is selected.
2. The valve drive unit according to claim 1, wherein
the valve drive unit has a sliding section between the external gear and another component, the type which has the first resistance has no sliding acceleration member, and the type which has the second resistance has a sliding acceleration member.
3. The valve drive unit according to claim 1, wherein
the valve drive unit has a sliding section between the external gear and another component, a sliding acceleration member is disposed in the sliding section, and a sliding resistance of the sliding acceleration member of the type which has the first resistance is bigger than that of the sliding acceleration member of the type which has the second resistance.
4. The valve drive unit according to claim 1, wherein
the valve drive unit has a sliding section between the external gear and another component, a sliding acceleration member is disposed in the sliding section, and a coefficient of friction of the sliding acceleration member of the type which has the first resistance is bigger than that of the sliding acceleration member of the type which has the second resistance.
5. The valve drive units according to claim 2, wherein the valve drive unit has an eccentric element to wobbly rotate the external gear, and the sliding section between the external gear and another component is the sliding section between the external gear and the eccentric element.
6. The valve drive units according to claim 2, wherein the carrier includes an inner pin fitted into an inner pinhole formed in the external gear with play for the sake of absorbing the wobbling ingredient of the external gear, and the sliding section between the external gear and another component is the sliding section between the inner pinhole formed in the external gear and the inner pin.
7. The valve drive units according to claim 2, wherein the valve drive unit has an eccentric element to wobbly rotate the external gear, the carrier includes an inner pin fitted into an inner pinhole formed in the external gear with play for the sake of absorbing the wobbling ingredient of the external gear, and the sliding section between the external gear and another component is the sliding section between the external gear and the eccentric element and is also the sliding section between the inner pinhole formed in the external gear and the inner pin.
8. A series of valve drive units for driving a valve body via reduction gears,
each reduction gear comprising an eccentric wobbling inscribed gear type of planetary gear mechanism, as at least one of reduction mechanisms of the reduction gear, having an input shaft, an external gear eccentrically and wobbly rotatable around the input shaft, an internal gear engaged with the external gear, and a carrier being able to absorb a wobbling ingredient of the external gear, one of the internal gear and the carrier being able to fixed and the other being able to coupled to the valve body, wherein
at least two types of the valve drive units are provided, one type of which places prime importance on function of preventing reverse rotation, and the other of which places prime importance on efficiency of rotation, by means of making difference in eccentric wobbling rotational resistance of the external gear.
9. The series of valve drive units according to claim 2, wherein components except for a component to make the difference in the eccentric wobbling rotational resistance of the external gear, are shared among the series of electric valve drive units.
10. A method for manufacturing a valve drive unit for driving a valve having a valve body comprising the steps of:
preparing a reduction mechanism having an input shaft, an external gear eccentrically and wobbly rotatable around the input shaft, an internal gear engaged with the external gear, a carrier being able to absorb a wobbling ingredient of the external gear;
enabling one of the internal gear and the carrier to be fixed and enabling the other one to be coupled to the valve body;
preparing two types of resistances as to eccentric wobbling rotational resistance of the external gear, one type of which has a first resistance against reverse torque from the valve body to the external gear, and the other type of which has a second resistance being smaller than the first resistance; and
selecting and adopting one type of the resistances.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An integrated circuit structure, comprising:
a substrate;
a high-k gate dielectric over the substrate;
a sacrificial carbon gate over the dielectric;
an etch barrier over the sacrificial carbon gate; and
carbon sidewall spacers over the etch barrier adjacent the sacrificial carbon gate.
2. The structure of claim 1, further comprising:
source and drain regions within the substrate formed using the carbon sidewall spacers to define the regions.
3. The structure of claim 1, wherein the etch barrier includes silicon nitride.
4. The structure of claim 1, wherein the high-k gate dielectric includes a dielectric formed using an atomic layer deposition process.
5. The structure of claim 1, wherein the high-k gate dielectric includes a dielectric formed using an evaporated deposition process.
6. The structure of claim 1, wherein the high-k gate dielectric includes a dielectric formed using a metal oxidizing process.
7. The structure of claim 1, wherein the high-k gate dielectric includes a nanolaminate.
8. An integrated circuit structure, comprising:
a substrate;
a gate dielectric over the substrate;
a sacrificial carbon gate over the dielectric; and
carbon sidewall spacers adjacent the sacrificial carbon gate.
9. The structure of claim 8, wherein the gate dielectric includes a high-k dielectric.
10. The structure of claim 8, wherein the carbon sidewall spacers include amorphous carbon.
11. The structure of claim 8, further comprising source and drain regions within the substrate, wherein the source and drain regions are formed using the sidewall spacers to define the regions.
12. (canceled)
13. (canceled)
14. An integrated circuit structure, comprising:
a substrate;
a high-k gate dielectric over the substrate, the high-k gate dielectric having a dielectric constant above the dielectric constant of silicon dioxide;
a sacrificial carbon gate over the dielectric;
an etch barrier over the sacrificial carbon;
carbon sidewall spacers over the etch barrier adjacent the sacrificial carbon gate; and
source and drain regions within the substrate, wherein the source and drain regions are formed using the carbon sidewall spacers to define the regions.
15. The structure of claim 14, wherein the high-k gate dielectric includes aluminum oxide.
16. The structure of claim 14, wherein the high-k gate dielectric includes titanium oxide.
17. The structure of claim 14, wherein the high-k gate dielectric includes yttrium oxide.
18. The structure of claim 14, wherein the high-k gate dielectric includes zirconium oxide.
19. The structure of claim 14, wherein the high-k gate dielectric includes hafnium oxide.
20. The structure of claim 14, wherein the high-k gate dielectric includes zirconium silicon oxide.
21. The structure of claim 14, wherein the high-k gate dielectric includes lanthanide aluminum oxide.
22. The structure of claim 14, wherein the high-k gate dielectric includes magnesium aluminum oxide.
23. The structure of claim 14, wherein the high-k gate dielectric includes hafnium aluminum oxide.
24. The structure of claim 14, wherein the high-k gate dielectric includes zirconium aluminum oxide.
25. The structure of claim 14, wherein the high-k gate dielectric includes chromium titanium oxide.
26. The structure of claim 14, wherein the high-k gate dielectric includes gadolinium oxide.
27. The structure of claim 14, wherein the high-k gate dielectric includes zirconium oxynitride.
28. The structure of claim 14, wherein the high-k gate dielectric includes Y\u2014Si\u2014O.
29. The structure of claim 14, wherein the high-k gate dielectric includes praseodymium based lanthanum oxide.
30. The structure of claim 14, wherein the high-k gate dielectric includes lanthanide-doped titanium oxide.
31. The structure of claim 14, wherein the high-k gate dielectric includes hafnium silicon oxynitride.
32. The structure of claim 14, wherein the high-k gate dielectric includes Zr\u2014Sn\u2014Ti\u2014O.
33. The structure of claim 14, wherein the high-k gate dielectric includes metal oxynitride.
34. The structure of claim 14, wherein the high-k gate dielectric includes an oxide including zirconium and titanium.
35. The structure of claim 14, wherein the high-k gate dielectric includes zirconium-doped tantalum oxide.
36. The structure of claim 14, wherein the high-k gate dielectric includes hafnium oxide\u2014silicon nitride.
37. The structure of claim 14, wherein the high-k gate dielectric includes lanthanide oxide.
38. The structure of claim 14, wherein the high-k gate dielectric includes titanium aluminum oxide.
39. The structure of claim 14, wherein the high-k gate dielectric includes lanthanide hafnium oxide.
40. The structure of claim 14, wherein the high-k gate dielectric includes hafnium tantalum oxide.