1. An RF power amplifier comprising:
a first power amplifier that amplifies a first RF transmission input signal of GSM850 and GSM900; and
a second power amplifier that amplifies a second RF transmission input signal of DCS1800, PCS1900, and WCDMA1900, wherein
the first power amplifier is constituted by a first multi-stage amplifier including at least a first input side amplifier and a first output side amplifier,
the second power amplifier is constituted by a second multi-stage amplifier including at least a second input side amplifier and a second output side amplifier,
when the second power amplifier amplifies the second RF transmission input signal of WCDMA1900, a gain of the second input side amplifier of the second multi-stage amplifier is set to a low gain in response to a mode signal of a predetermined signal, and
when the second power amplifier amplifies the second RF transmission input signal of DCS1800 or PCS1900, the gain of the second input side amplifier of the second multi-stage amplifier is set to a gain higher than the low gain in response to a change of the mode signal to a signal different from the predetermined signal.
2. An RF power amplifier according to claim 1, wherein
a first bias circuit including a first voltage follower is connected to the first multi-stage amplifier of the first power amplifier and a second bias circuit including a second voltage follower is connected to the second multi-stage amplifier of the second power amplifier,
for ramp-up and ramp-down in a TDMA system in GSM transmission in GSM850 or GSM900 by the first power amplifier, the first bias circuit controls a level of a bias voltage supplied to an input electrode of an amplification element of the first multi-stage amplifier of the first power amplifier by using the first voltage follower in response to a level of a gain control signal,
in transmission in WCDMA1900 by the second power amplifier, the second voltage follower of the second bias circuit is controlled to be in an inactive state in response to the mode signal of the predetermined signal and the second bias circuit controls, in response to a level of the gain control signal, a level of a bias voltage supplied to an input electrode of an amplification element of the second multi-stage amplifier of the second power amplifier, and
for ramp-up and ramp-down in the TDMA system in the GSM transmission of DCS1800 or PCS1900 by the second power amplifier, the second voltage follower of the second bias circuit is controlled to be in an inactive state in response to the mode signal of the different signal and the second bias circuit controls, in response to a level of the gain control signal, a level of a bias voltage supplied to the input electrode of the amplification element of the second multi-stage amplifier of the second power amplifier by using the second voltage follower controlled to be in the inactive state.
3. An RF power amplifier according to claim 1, wherein
the first power amplifier further includes a first input side bias circuit and a first input side voltage follower for the first input side amplifier of the first multi-stage amplifier,
the first input side bias circuit generates a first input side bias voltage that changes in response to a level of a gain control signal for ramp-up and ramp-down in the TDMA system in the GSM communication,
the first input side bias voltage generated by the first input side bias circuit is supplied to the input electrode of the first input side amplification element of the first input side amplifier of the first multi-stage amplifier of the first power amplifier via the first input side voltage follower,
the second power amplifier further includes a second input side bias circuit and a second input side voltage follower for the second input side amplifier of the second multi-stage amplifier,
the second input side bias circuit generates a second input side bias voltage that changes in response to a level of the gain control signal for ramp-up and ramp-down in the TDMA system in the GSM communication,
the second input side bias voltage generated by the second input side bias circuit is supplied to the input electrode of the second input side amplification element of the second input side amplifier of the second multi-stage amplifier of the second power amplifier via the second input side voltage follower, and
when the second power amplifier amplifies the second RF transmission input signal of WCDMA1900, the second input side voltage follower of the second power amplifier is controlled to be in an inactive state in response to the mode signal of the predetermined signal and the second input side bias voltage generated by the second input side bias circuit is supplied to the input electrode of the second input side amplification element bypassing the second input side voltage follower controlled to be in the inactive state.
4. An RF power amplifier according to claim 3, wherein
the first power amplifier further includes a first output side bias circuit and a first output side voltage follower for the first output side amplifier of the first multi-stage amplifier,
the first output side bias circuit generates a first output side bias voltage that changes in response to a level of the gain control signal for ramp-up and ramp-down in the TDMA system in the GSM communication,
the first output side bias voltage generated by the first output side bias circuit is supplied to the input electrode of the first output side amplification element of the first output side amplifier of the first multi-stage amplifier of the first power amplifier via the first output side voltage follower,
the second power amplifier further includes a second output side bias circuit and a second output side voltage follower for the second output side amplifier of the second multi-stage amplifier,
the second output side bias circuit generates a second output side bias voltage that changes in response to a level of the gain control signal for ramp-up and ramp-down in the TDMA system in the GSM communication,
the second output side bias voltage generated by the second output side bias circuit is supplied to the input electrode of the second output side amplification element of the second output side amplifier of the second multi-stage amplifier of the second power amplifier via the second output side voltage follower, and
when the second power amplifier amplifies the second RF transmission input signal of WCDMA1900, the second output side voltage follower of the second power amplifier is controlled to be in an inactive state in response to the mode signal of the predetermined signal and the second output side bias voltage generated by the second output side bias circuit is supplied to the input electrode of the second output side amplification element bypassing the second output side voltage follower controlled to be in the inactive state.
5. An RF power amplifier according to claim 1, wherein
a frequency of the second RF transmission input signal is set to be about twice as high as a frequency of the first RF transmission input signal, and
the first power amplifier includes a harmonic trap circuit that bypasses the two-fold harmonic of the first RF transmission input signal to a ground potential point.
6. An RF power amplifier according to claim 1, wherein
the second input side amplifier of the second multi-stage amplifier of the second power amplifier is constituted by a negative feedback amplifier, and
a negative feedback amount of the second input side amplifier constituted by the negative feedback amplifier at the time when the mode signal is the predetermined signal is set to be larger than a negative feedback amount of the second input side amplifier constituted by the negative feedback amplifier at the time when the mode signal is the different signal.
7. An RF power amplifier according to claim 6, wherein
the second input side amplifier of the second multi-stage amplifier of the second power amplifier includes a negative feedback variable resistor connected between the output electrode and the input electrode of the second input side amplification element,
when the mode signal is the predetermined signal, a resistance of the negative feedback variable resistor is controlled to be a low resistance, and
when the mode signal is the different signal, the resistance of the negative feedback variable resistor is controlled to be a high resistance higher than the low resistance.
8. An RF power amplifier according to claim 1, wherein
the second input side amplifier of the second multi-stage amplifier of eh second power amplifier further includes a control amplification element connected between the output electrode of the second input side amplification element and a load element,
a gain control voltage is applied to the input electrode of the control amplification element,
when the second power amplifier amplifies the second RF transmission input signal of the DCS1800 or PCS1900, the gain control voltage is set to a high level, and
when the second power amplifier amplifies the second RF transmission input signal of WCDMA1900, the gain control voltage is set to a low level lower than the high level.
9. An RF power amplifier according to claim 1, wherein the first input side amplification element, the second input side amplification element, the first output side amplification element, and the second output side amplification element of the first power amplifier and the second power amplifier are field effect transistors.
10. An RF power amplifier according to claim 9, wherein the field effect transistors are lateral double diffused MOSs (LDMOSs).
11. An RF power amplifier according to claim 1, wherein the first input side amplification element, the second input side amplification element, the first output side amplification element, and the second output side amplification element of the first power amplifier and the second power amplifier are bipolar transistors.
12. An RF power amplifier according to claim 11, wherein the bipolar transistors are heterojunction bipolar transistors.
13. An RF power amplifier according to claim 1, wherein the first power amplifier, the second power amplifier, and a power detector that detects transmission power levels of the first power amplifier and the second power amplifier are mounted on a package of an RF power module.
14. An RF power amplifier comprising:
a first power amplifier that amplifies a first RF transmission input signal of a TDMA system having a first frequency band of about 0.8 GHz to 1.0 GHz; and
a second power amplifier that amplifies a second RF transmission input signal of the TDMA system having a second frequency band of about 1.7 GHz to 2.0 GHz and a third RF transmission input signal of a WCDMA system having a third frequency band of about 1.7 GHz to 2.0 GHz, wherein
the first power amplifier is constituted by a first multi-stage amplifier including at least a first input side amplifier and a first output side amplifier,
the second power amplifier is constituted by a second multi-stage amplifier including at least a second input side amplifier and a second output side amplifier,
when the second power amplifier amplifies the third RF transmission input signal of the WCDMA system, a gain of the second input side amplifier of the second multi-stage amplifier is set to a low gain in response to a mode signal of a predetermined signal, and
when the second power amplifier amplifies the second RF transmission input signal of the TDMA system, since the mode signal is changed to a signal different from the predetermined signal, the gain of the second input side amplifier of the second multi-stage amplifier is set to a high gain higher than the low gain.
15. An RF power amplifier according to claim 14, wherein
a first bias circuit including a first voltage follower is connected to the first multi-stage amplifier of the first power amplifier and a second bias circuit including a second voltage follower is connected to the second multi-stage amplifier of the second power amplifier,
for ramp-up and ramp-down in a TDMA system in transmission according to amplification of the first RF transmission input signal by the first power amplifier, the first bias circuit controls a level of a bias voltage supplied to an input electrode of an amplification element of the first multi-stage amplifier of the first power amplifier by using the first voltage follower in response to a level of a gain control signal,
in transmission according to amplification of the third RF transmission input signal of the WCDMA system by the second power amplifier, the second voltage follower of the second bias circuit is controlled to be in an inactive state in response to the mode signal of the predetermined signal and the second bias circuit controls, in response to a level of the gain control signal, a level of a bias voltage supplied to an input electrode of an amplification element of the second multi-stage amplifier of the second power amplifier, and
for ramp-up and ramp-down in transmission according to amplification of the second RF transmission input signal of the TDMA system by the second power amplifier, the second voltage follower of the second bias circuit is controlled to be in an inactive state in response to the mode signal of the different signal and the second bias circuit controls, in response to a level of the gain control signal, a level of a bias voltage supplied to the input electrode of the amplification element of the second multi-stage amplifier of the second power amplifier by using the second voltage follower controlled to be in the inactive state.
16. An RF power amplifier according to claim 14, wherein
the first power amplifier further includes a first input side bias circuit and a first input side voltage follower for the first input side amplifier of the first multi-stage amplifier,
the first input side bias circuit generates a first input side bias voltage that changes in response to a level of a gain control signal for ramp-up and ramp-down in the TDMA system in the GSM communication,
the first input side bias voltage generated by the first input side bias circuit is supplied to the input electrode of the first input side amplification element of the first input side amplifier of the first multi-stage amplifier of the first power amplifier via the first input side voltage follower,
the second power amplifier further includes a second input side bias circuit and a second input side voltage follower for the second input side amplifier of the second multi-stage amplifier,
the second input side bias circuit generates a second input side bias voltage that changes in response to a level of the gain control signal for ramp-up and ramp-down in the TDMA system in the GSM communication,
the second input side bias voltage generated by the second input side bias circuit is supplied to the input electrode of the second input side amplification element of the second input side amplifier of the second multi-stage amplifier of the second power amplifier via the second input side voltage follower, and
when the second power amplifier amplifies the third RF transmission input signal of the WCDMA system, the second input side voltage follower of the second power amplifier is controlled to be in an inactive state in response to the mode signal of the predetermined signal and the second input side bias voltage generated by the second input side bias circuit is supplied to the input electrode of the second input side amplification element bypassing the second input side voltage follower controlled to be in the inactive state.
17. An RF power amplifier according to claim 16, wherein
the first power amplifier further includes a first output side bias circuit and a first output side voltage fol\xa5lower for the first output side amplifier of the first multi-stage amplifier,
the first output side bias circuit generates a first output side bias voltage that changes in response to a level of the gain control signal for ramp-up and ramp-down in the TDMA system in the GSM communication,
the first output side bias voltage generated by the first output side bias circuit is supplied to the input electrode of the first output side amplification element of the first output side amplifier of the first multi-stage amplifier of the first power amplifier via the first output side voltage follower,
the second power amplifier further includes a second output side bias circuit and a second output side voltage follower for the second output side amplifier of the second multi-stage amplifier,
the second output side bias circuit generates a second output side bias voltage that changes in response to a level of the gain control signal for ramp-up and ramp-down in the TDMA system in the GSM communication,
the second output side bias voltage generated by the second output side bias circuit is supplied to the input electrode of the second output side amplification element of the second output side amplifier of the second multi-stage amplifier of the second power amplifier via the second output side voltage follower, and
when the second power amplifier amplifies the third RF transmission input signal of the WCDMA system, the second output side voltage follower of the second power amplifier is controlled to be in an inactive state in response to the mode signal of the predetermined signal and the second output side bias voltage generated by the second output side bias circuit is supplied to the input electrode of the second output side amplification element bypassing the second output side voltage follower controlled to be in the inactive state.
18. An RF power amplifier according to claim 14, wherein
a frequency of the second RF transmission input signal and the third RF transmission input signal is set to be about twice as high as a frequency of the first RF transmission input signal, and
the first power amplifier includes a harmonic trap circuit that bypasses the two-fold harmonic of the first RF transmission input signal to a ground potential point.
19. An RF power amplifier according to claim 14, wherein
the second input side amplifier of the second multi-stage amplifier of the second power amplifier is constituted by a negative feedback amplifier, and
a negative feedback amount of the second input side amplifier constituted by the negative feedback amplifier at the time when the mode signal is the predetermined signal is set to be larger than a negative feedback amount of the second input side amplifier constituted by the negative feedback amplifier at the time when the mode signal is the different signal.
20. An RF power amplifier according to claim 19, wherein
the second input side amplifier of the second multi-stage amplifier of the second power amplifier includes a negative feedback variable resistor connected between the output electrode and the input electrode of the second input side amplification element,
when the mode signal is the predetermined signal, a resistance of the negative feedback variable resistor is controlled to be a low resistance, and
when the mode signal is the different signal, the resistance of the negative feedback variable resistor is controlled to be a high resistance higher than the low resistance.
21. An RF power amplifier according to claim 14, wherein
the second input side amplifier of the second multi-stage amplifier of the second power amplifier further includes a control amplification element connected between the output electrode of the second input side amplification element and a load element,
a gain control voltage is applied to the input electrode of the control amplification element,
when the second power amplifier amplifies the second RF transmission input signal of the TDMA system, the gain control voltage is set to a high level, and
when the second power amplifier amplifies the third RF transmission input signal of the WCDMA system, the gain control voltage is set to a low level lower than the high level.
22. An RF power amplifier according to claim 14, wherein the first input side amplification element, the second input side amplification element, the first output side amplification element, and the second output side amplification element of the first power amplifier and the second power amplifier are field effect transistors.
23. An RF power amplifier according to claim 22, wherein the field effect transistors are lateral double diffused MOSs (LDMOSs).
24. An RF power amplifier according to claim 14, wherein the first input side amplification element, the second input side amplification element, the first output side amplification element, and the second output side amplification element of the first power amplifier and the second power amplifier are bipolar transistors.
25. An RF power amplifier according to claim 24, wherein the bipolar transistors are heterojunction bipolar transistors.
26. An RF power amplifier according to claim 14, wherein the first power amplifier, the second power amplifier, and a power detector that detects transmission power levels of the first power amplifier and the second power amplifier are mounted on a package of an RF power module.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for transporting data between a module on a virtual machine host and a management application running on a virtualization management platform, the method comprising:
registering a namespace on the virtualization management platform by the management application and on the virtual machine host by the module, wherein the registering identifies the virtualization software and the management application as endpoints of a communication channel;
sending, by the management application or the module, the data via the communication channel, wherein the data traverses at least the virtualization management platform and one or more intermediate layers of the virtualization software, wherein the data is opaque to the virtualization management platform and the one or more intermediate layers, and wherein the data is not processed by the virtualization management platform and the one or more intermediate layers.
2. The method of claim 1, wherein a key which includes the namespace identifies the data.
3. The method of claim 1, wherein the module enhances or extends functionality of at least one of a distributed virtual switch and the virtual machine host.
4. The method of claim 3, wherein the namespace indicates an association with at least one of a distributed virtual switch, a port group of a distributed virtual switch, a port of a distributed virtual switch, and the host.
5. The method of claim 4, wherein configuration property settings of the distributed virtual switch are inherited by one or more port groups of the distributed virtual switch.
6. The method of claim 5, wherein configuration property settings of at least one port group are inherited by one or more ports of the port group.
7. The method of claim 6, wherein the data is one of configuration data sent by the management application and per-port runtime data sent by the module.
8. The method of claim 1, further comprising:
converting the data to a binary format before sending the data via the communication channel.
9. The method of claim 1, further comprising:
storing the data and the communication channel in a database associated with one of the virtualization management platform and the one or more intermediate layers; and
sending, by the virtualization management platform, the data to one of the module, a new module, or a restarted module via the communication channel.
10. The method of claim 1, wherein the registering includes invoking an API of the virtualization software by the module and invoking an API of the virtualization management platform by the management application.
11. A computer-readable storage medium containing a program which, when executed by processors on a management server and a plurality of host servers, performs operations for pushing changes to a configuration of a distributed virtual switch from a management server to a plurality of host servers, the operations comprising:
registering a namespace on the virtualization management platform by the management application and on the virtualization software by the module, wherein the registering identifies the virtualization software and the management application as endpoints of a communication channel;
sending, by the management application or the module, the data via the communication channel, wherein the data traverses at least the virtualization management platform and one or more intermediate layers of the virtualization software, wherein the data is opaque to the virtualization management platform and the one or more intermediate layers, and wherein the data is not processed by the virtualization management platform and the one or more intermediate layers.
12. The computer-readable storage medium of claim 11, wherein a key which includes the namespace identifies the data.
13. The computer-readable storage medium of claim 11, wherein the module enhances or extends functionality of at least one of a distributed virtual switch and the host.
14. The computer-readable storage medium of claim 13, wherein the namespace indicates an association with at least one of a distributed virtual switch, a port group of a distributed virtual switch, a port of a distributed virtual switch, and the host.
15. The computer-readable storage medium of claim 14, wherein configuration property settings of the distributed virtual switch are inherited by one or more port groups of the distributed virtual switch, and wherein configuration property settings of at least one port group are inherited by one or more ports of the port group.
16. The computer-readable storage medium of claim 15, wherein the data is one of configuration data sent by the management application and per-port runtime data sent by the module.
17. The computer-readable storage medium of claim 11, the operations further comprising:
converting the data to a binary format before the data is sent via the communication channel.
18. The computer-readable storage medium of claim 11, the operations further comprising:
storing the data and the communication channel in a database associated with one of the virtualization management platform and the one or more intermediate layers; and
sending, by the virtualization management platform, the data to one of the module, a new module, or a restarted module via the communication channel.
19. The computer-readable storage medium of claim 11, wherein the registering includes invoking an API of the virtualization software by the module and invoking an API of the virtualization management platform by the management application.
20. A system, comprising:
a processor; and
a memory, wherein the memory includes a management program which runs on a virtualization management platform, the management program being configured to perform operations comprising:
registering a namespace on the virtualization management platform to identify the management application as a first endpoint of a communication channel, wherein a second endpoint of the communication channel is a module on a virtual machine host;
sending the data via the communication channel, wherein the data traverses at least the virtualization management platform and one or more intermediate layers of the virtual machine host, wherein the data is opaque to the virtualization management platform and the one or more intermediate layers, and wherein the data is not processed by the virtualization management platform and the one or more intermediate layers.