1. A dielectric material configured to be used in a capacitor, the dielectric material in the form of polymer film comprising a blend of polyvinylidene fluoride (PVDF) and at least one polar material selected from the group consisting of: polyethylene terephthalate (PET); polycarbonate (PC); polyethylene naphthalate (PEN); polyphenylene sulfide (PPS); polytetrafluoroethylene (PTFE); polystyrene (PST); polysulphone (PS); polyethermide (PEM); and polyimide (PI).
2. The dielectric material according to claim 1 wherein the polymer film is formed from a melt-cast blend.
3. The dielectric material according to claim 1 wherein the polymer film is biaxially oriented.
4. The dielectric material according to claim 1 wherein the polymer film is a blend of at least one selected from the group consisting of: homopolymers; copolymers; and homopolymers and copolymers.
5. The dielectric material according to claim 1 wherein the polymers of the blend have at least one selected from the group consisting of: melt-flow characteristics within about 100 Degrees C.; and viscosities within about 10,000 Pascal-Seconds.
6. The dielectric material according to claim 1 wherein the polymers of the blend have at least one selected from the group consisting of: melt-flow characteristics within about 75 Degrees C.; and viscosities within about 1000 Pascal-Seconds.
7. The dielectric material according to claim 1 further comprising a component to substantially prevent the dielectric material from sticking to film transporting rolls during film formation.
8. The dielectric material according to claim 7 wherein said component is at least one selected from the group consisting of: silica; and calcium carbonate.
9. The dielectric material according to claim 1 wherein the polymers of the blend are mixed in solid form, and extruded into melt-cast sheets.
10. The dielectric material according to claim 1 wherein the polymer film has a thickness in a range from about 0.5 to about 25 micro-meters.
11. The dielectric material according to claim 1 wherein the polymer film has a concentration of PVDF from about 0.01 (1%) to about 0.99 (99%).
12. The dielectric material according to claim 1 wherein the polymer film has a concentration of PVDF from between about 0.01 (1%) to about 0.30 (30%).
13. A method comprising extruding into melt-cast sheets a blend of polyvinylidene fluoride (PVDF) and a second polymer being at least one selected from the group consisting of: polyethylene terephthalate (PET); polycarbonate (PC); polyethylene naphthalate (PEN); polyphenylene sulfide (PPS); polytetrafluoroethylene (PTFE); polystyrene (PST); polysulphone (PS); polyethermide (PEM); and polyimide (PI).
14. The method according to claim 13 further comprising blending the PVDF and the second polymer in solid form.
15. The method according to claim 14 wherein blending further comprises feeding the PVDF and the second polymer by way of a twin-screw extruder.
16. The method according to claim 13 further comprising, prior to the extruding, drying the PVDF and the second polymer at a temperature less than the melting point of either the PVDF or the second polymer.
17. The method according to claim 13 further comprising quenching the melt-cast sheet.
18. The method according to claim 17 wherein quenching further comprises quenching using at least one selected from the group consisting of: a rapid air-cool jet impinging on the melt-cast sheet; and a liquid-cooled chill-wheel.
19. The method according to claim 13 further comprising:
electrostatically pinning the melt-cast sheet to a liquid-cooled chill-wheel; and
quenching the melt-cast sheet over a liquid-cooled chill-wheel.
20. The method according to claim 13 further comprising biaxially orienting the melt-cast sheet into an oriented film having a thickness from about 0.5 to about 25 micro-meters.
21. The method according to claim 20 wherein biaxially orienting further comprises:
performing a machine direction orientation (MDO); and
performing a transverse-direction orientation (TDO).
22. The method according to claim 21 wherein performing the MDO further comprises stretching melt-cast sheet from about 1.5 to about 15 times an original length.
23. The method according to claim 21 wherein performing the TDO further comprises stretching the melt-cast sheet from about 1.5 to about 15 times an original width.
24. The method according to claim 21 further comprising annealing the oriented film during performance of the TDO.
25. The method according to claim 13 wherein extruding further comprises extruding a blend of PVDF and the second polymer where the PVDF has a concentration about 0.01 (1%) to about 0.99 (99%).
26. The method according to claim 13 wherein extruding further comprises extruding a blend of PVDF and the second polymer where the PVDF has a concentration about 0.01 (1%) to about 0.30 (30%).
27. A film capacitor comprising:
a dielectric film comprising a blend of polyvinylidene fluoride (PVDF) and a second polymer selected from the group consisting of: polyethylene terephthalate (PET); polycarbonate (PC); polyethylene naphthalate (PEN); polyphenylene sulfide (PPS); polytetrafluoroethylene (PTFE); polystyrene (PST); polysulphone (PS); polyethermide (PEM); and polyimide (PI);
a first metal film abutting the dielectric film on a first side of the dielectric film;
a second metal film abutting the dielectric film on a second side of the dielectric film;
a first termination electrically coupled to the first metal film; and
a second termination electrically coupled to the second metal film.
28. The film capacitor according to claim 27 wherein the first metal film is deposited directly on the first side of the dielectric film.
29. The film capacitor according to claim 28 wherein the first metal film is deposited via a thermal deposition process.
30. The film capacitor according to claim 28 wherein depositing further comprises depositing a metal having an electrical resistance from about 0.1 ohms per square to about 1000 ohms per square.
31. The film capacitor according to claim 27 wherein the dielectric film has a concentration of PVDF from about 0.01 (1%) to about 0.99 (99%).
32. The film capacitor according to claim 27 wherein the dielectric film has a concentration of PVDF from between about 0.01 (1%) to about 0.30 (30%).
33. The film capacitor according to claim 27 wherein capacitor has at least one selected from the group consisting of: a wound configuration; and a stacked configuration.
34. The film capacitor according to claim 27 wherein the capacitor is impregnated with a dielectric fluid and hermetically sealed.
35. A method of manufacturing dielectric film comprising:
selecting at least two polymers according to a desired property of the dielectric film, the desired property being at least one selected from the group consisting of: dielectric constant; dielectric strength; insulation resistance; and operating temperature;
extruding a blend of the two polymers to create a melt-cast sheet; and
stretching the melt-cast sheet into an oriented film having a thickness from about 0.5 to about 25 micro-meters.
36. The method according to claim 35 further comprising blending the at least two polymers in solid form.
37. The method according to claim 35 further comprising coating the film with a polymeric material configured to at least one selected from the group consisting of: seal defects of the film; and harden a surface of the film.
38. The method according to claim 35 depositing a metal layer on a first side of the film.
39. The method according to claim 38 wherein depositing further comprises depositing a metal having an electrical resistance from about 0.1 ohms per square to about 1000 ohms per square.
40. The method according to claim 35 wherein selecting further comprises selecting polyvinylidene fluoride (PVDF) and at least one polymer selected from the group consisting of: polyethylene terephthalate (PET); polycarbonate (PC); polyethylene naphthalate (PEN); polyphenylene sulfide (PPS); polytetrafluoroethylene (PTFE); polystyrene (PST); polysulphone (PS); polyethermide (PEM); and polyimide (PI).
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A connector comprising:
a monolithic hollow cylindrical dielectric body comprising at least one first conductive path and a second conductive path associated with each first conductive path, each of the at least one first conductive path and second conductive path being formed in the cylindrical dielectric body, wherein each first conductive path is formed a first radial distance from an inner radial surface of the cylindrical dielectric body and each second conductive path is formed a second radial distance from the inner radial surface, the first radial distance being greater than the second radial distance, wherein the first conductive path is configured to transfer a signal from a first Printed Circuit Board (PCB) to a second PCB and the second conductive path associated with the first conductive path provides a return path for the signal;
a first ferrite layer disposed on the inner radial surface of the body; and
a second ferrite layer disposed on an outer radial surface of the body, wherein the first ferrite layer and second ferrite layer are configured to suppress electromagnetic radiation from the connector.
2. The connector of claim 1, wherein the dielectric body is made from Flame Resistant 4 (FR4) material.
3. The connector of claim 1, wherein the width and the length of the first conductive path and second conductive path are configured to set the impedance of the connector at or near the impedance of the first PCB and the second PCB.
4. The connector of claim 1, wherein the dielectric body is made from a dielectric material selected to maintain controlled impedance throughout the length of the connector.
5. The connector of claim 1, wherein the connector is configured to releasably attach to a standoff mechanically connecting the first PCB and the second PCB and provide an electrical connection between the first PCB and the second PCB.
6. A method for electrically connecting PCBs, comprising:
placing a connector between a first PCB and a second PCB, the connector comprising:
a monolithic hollow cylindrical dielectric body comprising at least one first conductive path and a second conductive path associated with each first conductive path, each of the first conductive path and the second conductive path being formed in the dielectric body, the first conductive path being formed a first radial distance from an inner radial surface of the dielectric body and the second conductive path being formed a second radial distance from the inner radial surface of the dielectric body, the first radial distance being greater than the second radial distance;
a first ferrite layer disposed on the inner radial surface of the body; and
a second ferrite layer disposed on an outer radial surface of the body,
wherein the first ferrite layer and second ferrite layer are configured to suppress electromagnetic radiation from the connector; and
transferring a signal through the first conductive path from the first PCB to the second PCB, wherein the second conductive path associated with the first conductive path provides a return path for the signal.
7. The method of claim 6, wherein the dielectric body is made from Flame Resistant 4 (FR4) material.
8. The method of claim 6, wherein the width and the length of the first conductive path and second conductive path are configured to set the impedance of the connector at or near the impedance of the first PCB and the second PCB.
9. The method of claim 6, wherein the dielectric body is made from a dielectric material selected to maintain controlled impedance throughout the length of the connector.
10. A system, comprising:
a first PCB;
a second PCB; and
at least one connector for electrically connecting the first PCB and the second PCB, wherein the connector comprises:
a monolithic hollow cylindrical body made from a dielectric material, the body comprising at least one first conductive path and a second conductive path associated with each first conductive path, each of the at least one first conductive path and second conductive path being formed in the cylindrical dielectric body, wherein each first conductive path is formed a first radial distance from an inner radial surface of the cylindrical dielectric body and each second conductive path is formed a second radial distance from the inner radial surface, the first radial distance being greater than the second radial distance, wherein the first conductive path is configured to transfer a signal from the first PCB to the second PCB and the second conductive path associated with the first conductive path provides a return path for the signal;
a first ferrite layer disposed on the inner radial surface of the body; and
a second ferrite layer disposed on an outer radial surface of the body,
wherein the first ferrite layer and second ferrite layer are configured to suppress electromagnetic radiation from the connector.
11. The system of claim 10, further comprising a standoff that mechanically couples the first PCB with the second PCB, wherein the connector is configured to couple with the standoff to connect the first PCB to the second PCB.
12. The system of claim 10, wherein the connector is configured to mechanically couple the first PCB with the second PCB.
13. The system of claim 10, wherein the dielectric material is made from Flame Resistant 4 (FR4) material.
14. The system of claim 10, wherein the width and the length of the first conductive path and second conductive path are configured to set the impedance of the connector at or near the impedance of the first PCB and the second PCB.
15. The system of claim 10, wherein the dielectric material is configured to maintain controlled impedance throughout the length of the connector.
16. The system of claim 10, wherein the first PCB and the second PCB are mechanically coupled with each other by a plurality of standoffs.
17. The system of claim 16, wherein the connector is configured to releasably attach to a standoff and provide an electrical connection between the first PCB and the second PCB.
18. The system of claim 17, further comprising a standoff cap for restraining the first PCB on a standoff, wherein the standoff cap, when coupled with a standoff, is configured transfer one or more signals from one or more cables coupled with the standoff cap to the second PCB through the connector associated with the standoff.
19. A connector, comprising:
a monolithic hollow cylindrical dielectric body comprising at least one first conductive path and a second conductive path associated with each first conductive path, each of the at least one first conductive path and second conductive path being formed in the cylindrical dielectric body, wherein each first conductive path is formed a first radial distance from an inner radial surface of the cylindrical dielectric body and each second conductive path is formed a second radial distance from the inner radial surface, the first radial distance being greater than the second radial distance, wherein the first conductive path is configured to transfer a signal from a first Printed Circuit Board (PCB) to a second PCB and the second conductive path associated with the first conductive path provides a return path for the signal;
a first surface for coupling the connector with the first PCB, wherein coupling comprises electrically connecting at least one of the first conductive elements and the associated second conductive elements to the first PCB; and
a second surface for coupling the connector with the second PCB, wherein coupling comprises electrically connecting the at least one of the first conductive elements and the second conductive elements to the second PCB;
a first ferrite layer disposed on the inner radial surface of the body; and
a second ferrite layer disposed on an outer radial surface of the body, wherein the first ferrite layer and second ferrite layer are configured to suppress electromagnetic radiation from the connector,
wherein the hollow cylindrical dielectric body is configured to receive a standoff that mechanically couples the first PCB with the second PCB.