1. A suction device for holding and conveying a sheet shaped member, comprising:
a suction roller which holds and conveys a laminated sheet comprising a coating layer formed on a sheet, the laminated sheet held on an outer peripheral surface of the suction roller by a suction roller section force; and
a vacuum chamber having a concave suction part, the concave suction part holding the laminated sheet by suction while in contact with the laminated sheet,
wherein the vacuum chamber is disposed such that the concave suction part is positioned at an upstream position in a conveying route from the suction roller in order to form an S-shaped conveying passage with the outer peripheral surface of the suction roller.
2. The suction device according to claim 1, wherein the concave suction part has a plurality of rotary bodies for supporting the laminated sheet.
3. The suction device according to claim 1, wherein the vacuum chamber provides a vacuum chamber suction force to the laminated sheet which is sufficient to overcome tension in the laminated sheet upstream of the suction device.
4. The suction device according to claim 2, wherein the vacuum chamber provides a suction force for the laminated sheet sufficient to overcome the tension in the laminated sheet upstream of the suction device.
5. A conveying method for a laminated sheet comprising a coating layer formed on a sheet, comprising the steps of:
holding the laminated sheet by suction and conveying the laminated sheet while maintaining contact with the laminated sheet, and maintaining the laminated sheet in a concave shape,
and thereafter,
holding the laminated sheet by suction and conveying the laminated sheet while maintaining contact with the laminated sheet and maintaining the laminated sheet in a convex shape.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A structure comprising:
a first plate within a trench and isolated from a wafer body by a first insulator layer formed in the trench; and
a second plate within the trench and isolated from the wafer body and the first plate by a second insulator layer formed in the trench.
2. The structure of claim 1, wherein the first plate and the second plate are independent from each other.
3. The structure of claim 1, wherein the first plate and the second plate are one of polysilicon, metal and metal silicide.
4. The structure of claim 1, wherein the first plate and the second plate are connected to contacts.
5. The structure of claim 1, further comprising an isolation structure between the second plate and the second insulator.
6. The structure of claim 1, wherein the trench is formed through a shallow trench isolation (STI) structure and extends into an underlying substrate.
7. The structure of claim 1, wherein the first plate pinches off a portion of the trench such that the second plate is not within the pinched off portion.
8. The structure of claim 1, wherein the first plate and the second plate are recessed within the trench and surrounded, at least partially, by an STI structure.
9. The structure of claim 1, further comprising at least two STI structures, wherein the trench is formed in one of the STI structures.
10. The structure of claim 9, wherein the STI structures protrudes above a surface of a substrate and the trench extends into the substrate.
11. The structure of claim 1, wherein the trench is scalable to increase or decrease a surface area of the first plate and the second plate thereby increasing or decreasing, respectively, a capacitance target of the structure.
12. A structure comprising:
a shallow trench isolation (STI) structure in a wafer body;
a hole through the STI and extending into the wafer body; forming a first plate within the hole isolated from the wafer body; and
a second plate within the hole which is independent of the first plate, the second plate being isolated from the first plate.
13. The structure of claim 12, further comprising an insulating material between the first plate from the wafer body.
14. The structure of claim 12, further comprising contacts on exposed regions of the first plate and the second plate.
15. The structure of claim 12, wherein the first plate and the second plate comprise a poly material, metal or metal silicide.
16. The structure of claim 12, wherein the first plate includes a poly material in the hole which pinches off a portion of the hole such that the of the second plate is only in another portion of the hole.
17. A design structure embodied in a machine readable medium for designing, manufacturing, or testing an integrated circuit, the design structure comprising:
a first plate within a trench and isolated from a wafer body by a first insulator layer formed in the trench; and
a second plate within the trench and isolated from the wafer body and the first plate by a second insulator layer formed in the trench.
18. The design structure of claim 17, wherein the design structure comprises a netlist.
19. The design structure of claim 17, wherein the design structure resides on storage medium as a data format used for the exchange of layout data of integrated circuits.