1. A thin film solar cell module of a see-through type having a plurality of cells connected in series on an opaque substrate and a plurality of holes formed in the opaque substrate among the cells, the thin film solar cell module comprising:
the opaque substrate having the holes;
a first electrode disposed on the opaque substrate and composed of a first comb electrode and a two-dimensional array composed of a plurality of block-like first electrodes;
a second electrode disposed above the first electrode and composed of a second comb electrode and a two-dimensional array composed of a plurality of block-like second electrodes, and a portion of the block-like first electrodes, a portion of the opaque substrate, and the holes being exposed between the second comb electrode and the block-like second electrodes,
wherein the second comb electrode and the first comb electrode are disposed symmetrically, and the block-like first electrodes and the block-like second electrodes are disposed by parallel displacement; and
a photoelectric conversion layer disposed between the first electrode and the second electrode,
wherein a top surface and sidewalls of the first electrode around the plurality of holes are covered by the photoelectric conversion layer and not in direct contact with the second electrode, and a top surface and sidewalls of the photoelectric conversion layer around the plurality of holes are covered by the second electrode, and the second electrode and the photoelectric conversion layer do not extend over sidewalls of the plurality of holes in the opaque substrate.
2. The thin film solar cell module of the see-through type of claim 1, wherein the first electrode is a transparent conductive oxide layer or a metal layer.
3. The thin film solar cell module of the see-through type of claim 2, wherein a material of the transparent conductive oxide layer comprises ZnO, SnO2, indium tin oxide (ITO), or In2O3; and a material of the metal layer comprises Al, Ag, Cu, Mo, or an alloy thereof.
4. The thin film solar cell module of the see-through type of claim 1, wherein the photoelectric conversion layer is a single-layered structure or a multi-layered structure.
5. The thin film solar cell module of the see-through type of claim 1, wherein a material of the photoelectric conversion layer comprises amorphous silicon and amorphous silicon alloy, CdS, CuInGaSe2 (CIGS), CuInSe2 (CIS), CdTe, or an organic material.
6. The thin film solar cell module of the see-through type of claim 1, wherein the second electrode is a transparent conductive oxide layer.
7. The thin film solar cell module of see-through type of claim 6, wherein a material of the transparent conductive oxide layer comprises ZnO, SnO2, indium tin oxide (ITO), or In2O3.
8. The thin film solar cell module of the see-through type of claim 6, wherein a plurality of comb-teeth portions of the second comb electrode and the block-like second electrodes arranged in a direction are respectively connected by a plurality of connecting portions.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A semiconductor structure comprising
a substrate;
a source region formed in the substrate;
a drain region formed in the substrate, the drain region having a first drain portion with a first doping concentration and a second drain portion with a second doping concentration, which is lower than the first doping concentration;
a drain contact in contact with the first drain portion;
a channel region between the source region and the second drain portion, the channel region bordering on the source region and on the second drain portion;
a gate above the channel region; and
a conductive field plate laterally spaced apart from the junction between the channel region and the second drain portion and disposed across the junction between the first drain portion and the second drain portion to reduce a gradient of the electric field at the junction, the field plate being disposed at a distance from the gate and the drain contact.
2. The semiconductor structure according to claim 1, wherein an isolating layer is disposed on the substrate, whereon the field plate is disposed.
3. The semiconductor structure of claim 1, wherein the field plate is disposed on the substrate.
4. The semiconductor structure of claim 1, wherein a voltage can be applied to the field plate.
5. The semiconductor structure of claim 4, wherein the voltage applicable to the field plate is in the range of 20 V to 80 V.
6. The semiconductor structure of claim 5, wherein a breakdown voltage of the drain region is set depending on a voltage applied to the field plate.
7. The semiconductor structure of claim 4, wherein the voltage applicable to the field plate is controlled depending on the drain voltage.
8. The semiconductor structure of claim 1, wherein the first drain portion has an intermediate region with a third doping concentration, which is higher than the second doping concentration and lower than the first doping concentration, the intermediate region being disposed adjacent to the second drain portion.
9. The semiconductor structure of claim 8, wherein the first doping concentration lies in the range of 1\xd71020 atomscm3, the second doping concentration lies in a range of 1\xd71020 atomscm3, and the third doping concentration in the range of 1\xd71017 atomscm3 and 2\xd71020 atomscm3.
10. The semiconductor structure of claim 8, wherein the field plate extends across the intermediate portion.
11. The semiconductor structure of claim 1, wherein the field plate is made of polysilicon.
12. The semiconductor structure of claim 1, wherein the filed plate has a thickness of 0.3 \u03bcm and 1.5 \u03bcm.
13. A semiconductor structure comprising
a substrate;
a source region formed in the substrate;
a drain region formed in the substrate, the drain region having a first drain portion with a first doping concentration and a second drain portion with a second doping concentration, which is lower than the first doping concentration;
a drain contact coupled to the first drain portion;
a channel region between the source region and the second drain portion, the channel region bordering on the source region and on the second drain portion and forming a first junction with the second drain portion;
a gate above the channel region; and
a conductive field plate laterally spaced apart from the first junction between the channel region and the second drain portion and disposed across a second junction between the first drain portion and the second drain portion to reduce a gradient of the electric field at the second junction, the field plate being disposed at a distance from the gate and the drain contact.
14. The semiconductor structure of claim 13, wherein a voltage can be applied to the field plate.
15. The semiconductor structure of claim 14, wherein a breakdown voltage of the drain region is set depending on a voltage applied to the field plate.
16. The semiconductor structure of claim 14, wherein the voltage applicable to the field plate is controlled depending on a voltage applied to the drain.
17. A semiconductor structure comprising
a substrate;
a source region formed in the substrate;
a drain region formed in the substrate, the drain region having a first drain portion with a first doping concentration and an intermediate region with a third doping concentration, which is lower than the first doping concentration, and a second drain portion with a second doping concentration, which is lower than the first doping concentration, and wherein the intermediate region of the first drain portion is disposed adjacent to the second drain portion and the third doping concentration is higher than the second doping concentration;
a drain contact coupled to the first drain portion;
a channel region between the source region and the second drain portion, the channel region bordering on the source region and on the second drain portion and forming a first junction with the second drain portion;
a gate above the channel region; and
a conductive field plate laterally spaced apart from the first junction between the channel region and the second drain portion and disposed across a second junction between the first drain portion and the second drain portion to reduce a gradient of the electric field at the second junction, the field plate being disposed at a distance from the gate and the drain contact.
18. The semiconductor structure of claim 17, wherein the first doping concentration is on the order of 1\xd71020 atomscm3, the second doping concentration is on the order of 1\xd71020 atomscm3, and the third doping concentration is in the range of about 1\xd71017 atomscm3 to about 2\xd71020 atomscm3.
19. The semiconductor structure of claim 17, wherein the field plate extends across the intermediate portion.