1. A method of forming a bonded body comprised of a first base member, a second base member, and a first bonding film and a second bonding film provided between the first base member and the second base member, wherein the first bonding film and the second bonding film are constituted mainly of copper, wherein the method comprising:
forming the first bonding film on the first base member by using a chemical vapor-film formation method;
forming the second bonding film on the second base member by using a chemical vapor-film formation method;
bringing the first bonding film formed on the first base member into contact with the second bonding film formed on the second base member so that the first bonding film faces the second bonding film; and
applying a compressive force to the first base member and the second base member so that the first bonding film and the second bonding film are bonded together to thereby obtain the bonded body.
2. The method as claimed in claim 1, wherein in the forming processes of the first bonding film and the second bonding film, each of the first bonding film and the second bonding film is formed so that its surface roughness Ra (according to JIS B 0601) is in the range of 1 to 30 nm.
3. The method as claimed in claim 1, wherein in the applying process of the compressive force, the compressive force to be applied to the first base member and the second base member is in the range of 1 to 100 MPa.
4. The method as claimed in claim 1, wherein in the applying process of the compressive force, a time of applying the compressive force to the first base member and the second base member is in the range of 5 to 180 minutes.
5. The method as claimed in claim 1, wherein in the applying process of the compressive force, the first bonding film and the second bonding film are heated.
6. The method as claimed in claim 5, wherein a temperature of heating the first bonding film and the second bonding film is in the range of 75 to 200\xb0 C.
7. The method as claimed in claim 1, wherein in the applying process of the compressive force, when the compressive force to be applied to the first base member and the second base member is 50 MPa, a time of applying the compressive force to the first base member and the second base member is defined as \u201cY\u201d minutes, a temperature of heating the first bonding film and the second bonding film is defined as \u201cT\u201d K, and a gas constant is defined as \u201cR\u201d J(mol\xb7K), the following relation is satisfied: 1Y\u22671.35\xd7109 exp \u221282\xd7103RT.
8. The method as claimed in claim 1, wherein the applying process of the compressive force is carried out in an air atmosphere.
9. The bonding method as claimed in claim 1, wherein an amount of the copper contained in each of the first bonding film and the second bonding film is 99 atom % or higher at a atomic ratio.
10. The bonding method as claimed in claim 1, wherein the forming processes of the first bonding film and the second bonding film are carried out by using a metal organic chemical vapor deposition method in which an organic metal material constituted of copper and the organic component is used as a raw material.
11. The method as claimed in claim 10, wherein the organic metal material includes an organic copper complex.
12. The method as claimed in claim 10, wherein a part of the organic component constituting the organic metal material remains in the first bonding film and the second bonding film as an impurity.
13. The method as claimed in claim 1, wherein an average thickness of each of the first bonding film and the second bonding film is in the range of 1 to 1,000 nm.
14. The method as claimed in claim 1, wherein each of the first base member and the second base member has a plate shape.
15. The method as claimed in claim 1, wherein the first base member and the second base member have a region on which the first bonding film and the second bonding film are formed, respectively, and at least the region of each of the first base member and the second base member is constituted of a silicon material, a metal material or a glass material as a main component thereof.
16. The method as claimed in claim 1, wherein the first base member and the second base member have a surface on which the first bonding film and the second bonding film are formed, respectively, and the surface of each of the first base member and the second base member is preliminarily subjected to a surface treatment to improve bonding strength between the first base member and the first bonding film and bonding strength between the second base member and the second bonding film.
17. The method as claimed in claim 16, wherein the surface treatment is a plasma treatment.
18. The method as claimed in claim 1, wherein the bonded body is further comprised of intermediate layers, and the intermediate layers are formed between the first base member and the first bonding film and between the second base member and the second bonding film, respectively.
19. The method as claimed in claim 18, wherein the intermediate layers are constituted of an oxide-based material as a main component thereof.
20. A bonded body formed by the method defined in claim 1.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A system for signal processing, the system comprising:
one or more circuits comprising an integrated amplifier, said one or more circuits being configurable such that:
in a first configuration, said one or more circuits are operable to process a differential input signal; and
in a second configuration, said one or more circuits are operable to process a single-ended input signal.
2. The system according to claim 1, wherein said one or more circuits output a differential signal when processing said differential input signal and when processing said single-ended input signal.
3. The system according to claim 1, wherein a voltage applied to a bias point of said one or more circuits comprises a first voltage for said first configuration and comprises a second voltage for said second configuration.
4. The system according to claim 1, wherein an inductance between an input of said integrated amplifier and a reference point comprises a first inductance for said first configuration and comprises a second inductance for said second configuration.
5. The system according to claim 4, wherein said inductance comprises the inductance of a bond wire which communicatively couples said integrated amplifier to an integrated circuit package.
6. The system according to claim 4, wherein said inductance is fabricated on a common substrate with said integrated amplifier.
7. The system according to claim 1, wherein a first bias voltage and a second bias voltage are available to said one or more circuits, and said first bias voltage is different than said second bias voltage.
8. The system according to claim 7, wherein, for said first configuration, a first input terminal of said integrated amplifier is communicatively coupled to a reference voltage via an inductance and a bias point of said integrated amplifier is communicatively coupled to said first bias voltage.
9. The system according to claim 7, wherein, for said second configuration, a first input terminal and a second input terminal of said integrated amplifier are communicatively coupled to said differential input signal and a bias point of said integrated amplifier is communicatively coupled to said second bias voltage.
10. The system according to claim 1, wherein said circuits comprise a center-tapped differential inductor that is coupled to an output terminal of said integrated amplifier.
11. A system for signal processing, the system comprising:
one or more circuits comprising an integrated amplifier, said one or more circuits being configurable to handle a single-ended or differential input signal, wherein:
for handling said single-ended input signal, a first input terminal of said integrated amplifier is communicatively coupled to a reference voltage via an inductance and a bias point of said integrated amplifier is communicatively coupled to a first bias voltage.
12. The system according to claim 11, wherein said one or more circuits output a differential signal when handling said differential input signal and when handling said single-ended input signal.
13. The system according to claim 11, wherein, for handling said differential input signal, said first input terminal of said integrated amplifier is communicatively coupled to said differential input signal and a bias point is communicatively coupled to a second bias voltage.
14. The system according to claim 13, wherein said reference voltage is zero volts DC, said first bias voltage is zero volts DC, and said second bias voltage is a non-zero voltage.
15. A system for signal processing, the system comprising:
one or more circuits comprising an integrated amplifier, said one or more circuits being configurable to process a differential or single-ended input signal, wherein:
for processing said differential input signal, a first input terminal and a second input terminal of said integrated amplifier are communicatively coupled to said differential input signal and a bias point is communicatively coupled to a first bias voltage.
16. The system according to claim 15, wherein said one or more circuits output a balanced signal when handling said differential input signal and when handling said single-ended input signal.
17. The system according to claim 15, wherein, for handling said single-ended input signal, a first input terminal of said integrated amplifier is communicatively coupled to ground via an inductance and a bias point of said integrated amplifier is communicatively coupled to a second bias voltage.
18. The system according to claim 17, wherein said reference voltage is zero volts DC, said first bias voltage is zero volts DC, and said second bias voltage is a non-zero DC voltage.
19. A system for signal processing, the system comprising:
one or more circuits comprising an integrated amplifier, said one or more circuits being configurable to handle differential or single-ended input signals, wherein whether said one or more circuits are operable to handle differential input signals or single-ended input signals is based on an inductance of a bond wire coupling said integrated amplifier to an integrated circuit package.
20. The system according to claim 19, wherein:
said bond wire is of a first length in instances that said one or more circuits are to handle differential input signals; and
said bond wire is a second length in instances that said one or more circuits are to handle single-ended input signals.