1. A method for the identification of a candidate modulatory compound that is capable of increasing the expression or activity of a mammalian akt nucleic acid sequence, involving:
(a) providing a C. elegans nematode or isolated C. elegans cell expressing said mammalian akt nucleic acid sequence, wherein said mammalian akt nucleic acid sequence encodes a polypeptide comprising a sequence having at least 95% identity to the sequence of SEQ ID NO: 87, 89, 91, 93, 95, or 97, and that functions in insulin signaling and
(b) contacting said cell or said nematode with a candidate compound, an increase in akt expression or activity following contact with said candidate compound identifying a modulatory compound.
2. The method of claim 1, wherein step (a) comprises providing a C. elegans cell.
3. The method of claim 1, wherein step (a) comprises providing a C. elegans nematode.
4. The method of claim 1, wherein said akt nucleic acid sequence encodes a polypeptide comprising a sequence identical to the sequence of SEQ ID NO: 87, 89, 91, 93, 95, or 97, and that functions in insulin signaling.
5. The method of claim 1, wherein said akt nucleic acid sequence is a human akt nucleic acid sequence.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A process for fabricating a state change element in a 3-D semiconductor memory device comprising the steps of:
(a) forming a semiconductor layer, wherein the semiconductor layer comprises polycrystalline semiconductor material;
(b) oxidizing at least a portion of the semiconductor layer in a plasma to form an oxide antifuse layer overlying the semiconductor layer; and
(c) creating a plurality of memory cells by repeating steps a and b, wherein the 3-D semiconductor memory device comprises a plurality of layers of memory cells stacked vertically above one another.
2. The process of claim 1, wherein the step of oxidizing at least a portion of the semiconductor layer comprises oxidizing at a temperature of no more than about 400\xb0 C.
3. The process of claim 1, wherein the step of oxidizing at least a portion of the semiconductor layer comprises a self-limiting oxidation process having an oxidation rate, and wherein the oxidation rate gradually decreases during the oxidation process.
4. The process of claim 1, wherein the step of forming a semiconductor layer comprises forming a layer of polycrystalline silicon doped with a conductivity determining dopant.
5. The process of claim 1, wherein the step of forming a semiconductor layer comprises forming a layer of amorphous silicon.
6. The process of claim 1, wherein the step of forming a semiconductor layer comprises forming a layer of recrystallized silicon.
7. A process for fabricating a 3-D semiconductor memory device comprising the steps of:
forming a first stack comprising a state change element; and
forming a second stack comprising a state change element overlying the first stack,
wherein forming each of the first stack and the second stack comprises
forming a semiconductor layer, wherein the semiconductor layer comprises polycrystalline semiconductor material; and
oxidizing at least a portion of the semiconductor layer in a plasma to form an oxide antifuse layer overlying the semiconductor layer;
wherein the 3-D semiconductor memory device comprises a plurality of layers of memory cells stacked vertically above one another.
8. The process of claim 7 further comprising forming orthogonally disposed conductor leads above and below each of the first and second stacks.