1. A wind turbine generator comprising:
a load measurement unit configured to measure a load on each wind turbine blade;
a moment calculating unit configured to calculate a moment around a wind-turbine tower axis by carrying out coordinate transformation of the load on each wind turbine blade measured by the load measurement unit;
a component-command-value setting unit configured to calculate an angle command value around the wind-turbine tower axis by adding a yaw-control command value to a reference command value for canceling out the moment calculated by the moment calculating unit; and
a pitch-angle-command setting unit configured to set a pitch-angle command value for each wind turbine blade on the basis of the angle command value around the wind-turbine tower axis.
2. The wind turbine generator according to claim 1, wherein the yaw-control command value is provided to correspond to the wind direction.
3. The wind turbine generator according to claim 1, wherein the yaw-control command value is set on the basis of a wind direction deviation.
4. A yaw driving method for a wind turbine generator, the method comprising:
a step of measuring a load on each wind turbine blade;
a step of calculating a moment around a wind-turbine tower axis by carrying out coordinate transformation of the load on each wind turbine blade;
a step of calculating an angle command value around the wind-turbine tower axis by adding a tower-axis-control command value to a reference command value for making the moment zero; and
a step of setting a pitch-angle control value for each wind turbine blade on the basis of the angle command value around the wind-turbine tower axis.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A phase control thyristor comprising:
a main gate structure on a cathode side of the thyristor;
a plurality of local emitter shorts dots arranged in a shorts pattern on the cathode side of the thyristor, wherein:
the main gate structure includes longitudinal main gate beams extending from a center region of a surface of the cathode side towards a circumferential region;
neighboring main gate beams are arranged with a distance with respect to an associated intermediate middle line;
the shorts pattern is more homogeneous in a region closer to a corresponding one of the main gate beams than in a region closer to the associated middle line; and
the density of the emitter shorts dots is smaller in the region closer to the corresponding one of the main gate beams and larger in the region closer to the associated middle line.
2. The phase control thyristor according to claim 1, wherein the emitter short dots have a diameter between 30 to 500 \u03bcm.
3. The phase control thyristor according to claim 1, wherein the emitter short dots have a surface area of 2.5% up to 8% of the total area in the region closer to a main gate beam.
4. The phase control thyristor according to claim 1, wherein the emitter short dots have a surface area of 8% up to 20% of the total area in the region closer to an associated middle line.
5. The phase control thyristor according to claim 1, wherein a number of dots is between 12 to 10000cm2 in the region closer to a main gate beam.
6. The phase control thyristor according to claim 1, wherein a number of dots is between 40 to 30000cm2 in the region closer to the associated middle line.
7. The phase control thyristor according to claim 1, wherein the shorts dots in the region closer to a main gate beam have substantially the same spacings.
8. The phase control thyristor according to claim 1, wherein the shorts dots in the region closer to a main gate beam have substantially the same sizes.
9. The phase control thyristor according to claim 1, wherein the shorts dots in the region closer to a main gate beam have at least one of larger spacings and smaller sizes than the shorts dots in the region closer to the associated middle line.
10. The phase control thyristor according to claim 1, wherein neighboring main gate beams are arranged symmetrically with respect to the associated intermediate middle line.
11. The phase control thyristor according to claim 1, wherein the main gate beams are tapered with a beam width reducing from the center region towards the circumferential region.
12. The phase control thyristor according to claim 11, wherein the local width of the main gate beams is adapted to a local current density during regular thyristor operation.
13. The phase control thyristor according to claim 11, wherein the beam width continuously reduces from the center region towards the circumferential region.
14. The phase control thyristor according to claim 1, comprising:
a pilot thyristor on the cathode side, the pilot thyristor including a pilot gate structure comprising longitudinal pilot gate beams extending into a region of the main gate beams.
15. The phase control thyristor according to claim 2, wherein the emitter short dots have a diameter between 50 and 400 \u03bcm.
16. The phase control thyristor according to claim 2, wherein the emitter short dots have a diameter between 100 and 400 \u03bcm.
17. The phase control thyristor according to claim 4, wherein the emitter short dots have a surface area of 10% up to 20% of the total area in the region closer to the associated middle line.
18. The phase control thyristor according to claim 5, wherein the number of dots is between 100 to 3500cm2 in the region closer to the main gate beam.
19. The phase control thyristor according to claim 6, wherein the number of dots is at least 200cm2 to 30000cm2 in the region closer to the associated middle line.
20. The phase control thyristor according to claim 2, wherein the emitter short dots have a surface area of 2.5% up to 8% of the total area in the region closer to a main gate beam.
21. The phase control thyristor according to claim 2, wherein the emitter short dots have a surface area of 8% up to 20% of the total area in the region closer to an associated middle line.
22. The phase control thyristor according to claim 3, wherein a number of dots is between 12 to 10000cm2 in the region closer to a main gate beam.
23. The phase control thyristor according to claim 4, wherein a number of dots is between 40 to 30000cm2 in the region closer to the associated middle line.