1. A spinal stabilization device, comprising: a first pair of arms and a second pair of arms, each pair of arms having a superior portion adapted to mate to a superior vertebra, an inferior portion adapted to mate to an inferior vertebra, and a central portion extending between the superior and inferior portions; a central spacer adapted to be positioned between posterior elements of adjacent vertebrae, and having a cross-connector extending therethrough and adapted to engage the central portion of the first and second pair of arms.
2. The spinal stabilization device of claim 1, wherein the cross-connector is slidably adjustable relative to the first and second pair of arms.
3. The spinal stabilization device of claim 1, wherein the cross-connector includes hook-shaped members formed on opposed ends thereof and adapted to engage the central portion of the first and second pair of arms.
4. The spinal stabilization device of claim 1, wherein the central spacer is formed from a polymeric material and is adapted to limit extension of adjacent vertebrae.
5. The spinal stabilization device of claim 1, wherein the first and second pair of arms each have a unitary configuration and are formed from an elastomeric material.
6. A spinal stabilization device, comprising: a central spacer having first and second opposed lateral sides, the central spacer being adapted to be positioned between posterior elements of adjacent superior and inferior vertebrae and adapted to limit extension of the adjacent superior and inferior vertebrae; and a first pair of arms extending from the first lateral side of the central spacer, the first pair of arms being adapted to couple to adjacent superior and inferior vertebrae, and a second pair of arms extending from the second lateral side of the central spacer, the second pair of arms being adapted to couple to adjacent superior and inferior vertebrae; wherein the central spacer is slidably adjustable relative to the first and second pair of arms.
7. The spinal stabilization device of claim 6, wherein at least a portion of at least one of the first and second pair of arms is pliable for providing resistance to movement of adjacent superior and inferior vertebrae coupled thereto.
8. The spinal stabilization device of claim 6, wherein the first and second pair of arms each have a unitary construction and are formed from an elastomeric material.
9. The spinal stabilization device of claim 8, wherein the central spacer includes a cross-connector extending therethrough and adapted to mate to the first and second pair of arms to allow slidable adjustment of the central spacer relative to the first and second pair of arms.
10. A method for stabilizing adjacent vertebrae, comprising: coupling a first pair of arms extending from a central spacer to a first lateral side of adjacent superior and inferior vertebrae; coupling a second pair of arms extending from the central spacer to a second lateral side of adjacent superior and inferior vertebrae; sliding the central spacer relative to the first and second arms to position the central spacer as desired; and locking the central spacer in a fixed position relative to the first and second pair of arms.
11. The method of claim 10, wherein the central spacer includes a cross-connector extending therethrough and having opposed ends adapted to engage the first and second pair of arms.
12. The method of claim 10, wherein the central spacer is compressible and is positioned between posterior elements of the adjacent superior and inferior vertebrae to limit extension of the vertebrae.
13. The method of claim 10, wherein the first and second pair of arms each having a unitary configuration and are formed from an elastomeric material.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of forming junctions in a silicon-germanium layer, comprising:
implanting a dopant into the silicon-germanium layer;
implanting fluorine into the silicon-germanium layer; and
wherein a depth of the fluorine peak concentration is greater than or equal to a depth of the dopant peak concentration.
2. The method recited in claim 1, wherein the dopant is arsenic.
3. The method recited in claim 1, wherein implanting the dopant and fluorine includes forming a drain extension region or shallow source and drain regions.
4. The method recited in claim 3, wherein an implant dose of the fluorine ranges from 1\xd71015 cm\u22122 to 1\xd71016cm\u22122 for a dopant implant dose of 8\xd71014 cm\u22122 to 1\xd71016 cm\u22122.
5. The method recited in claim 1, wherein implanting the dopant and fluorine includes forming a halo or pocket region.
6. The method recited in claim 5, wherein an implant dose of the fluorine ranges from 5\xd71013 cm\u22122 to 5\xd71014 cm\u22122 for a dopant implant dose of 1\xd71013 cm\u22122 to 1\xd71014 cm\u22122.
7. The method recited in claim 1, wherein the dopant and fluorine are implanted adjacent a transistor gate.
8. The method recited in claim 1, wherein the silicon-germanium layer is located over a semiconductor substrate and the silicon-germanium layer has a germanium concentration that ranges from about 0 atomic percent at an interface between the semiconductor substrate and the silicon-germanium layer to about 20atomic percent at an upper surface of the silicon-germanium layer.
9. The method recited in claim 1 further including conducting an anneal following the implantation of the dopant and the fluorine.
10. A method of manufacturing an integrated circuit, comprising, comprising:
forming transistor gates over a semiconductor substrate;
implanting a dopant into a silicon-germanium layer located over the semiconductor substrate and adjacent the transistor gates;
implanting fluorine into the silicon-germanium layer adjacent the transistor gates;
forming source and drains adjacent the transistor gates;
depositing dielectric layers over the transistor gates;
forming interconnects in the dielectric layers to electrically interconnect the transistors and form an operative integrated circuit; and
wherein a depth of the fluorine peak concentration is greater than or equal to a depth of the dopant peak concentration.
11. The method recited in claim 10, wherein the dopant is arsenic.
12. The method recited in claim 10, wherein implanting the dopant and fluorine includes forming a drain extension region or shallow source and drain regions.
13. The method recited in claim 12, wherein an implant dose of the fluorine ranges from 1\xd71015 cm\u22122 to 1\xd71016 cm\u22122 for a dopant implant dose of 8\xd71014 cm\u22122 to 1\xd71016 cm\u22122.
14. The method recited in claim 10, wherein implanting the dopant and fluorine includes forming a halo or pocket region.
15. The method recited in claim 14, wherein an implant dose of the fluorine ranges from 5\xd71013 cm\u22122 to 5\xd71014 cm\u22122 for a dopant implant dose of 1\xd71013 cm\u22122 to 1\xd71014 cm\u22122.
16. The method recited in claim 10, wherein the dopant and fluorine are implanted adjacent a transistor gate.
17. The method recited in claim 10, wherein the silicon-germanium layer is located over a semiconductor substrate and the silicon-germanium layer has a germanium concentration that ranges from about 0 atomic percent at an interface between the semiconductor substrate and the silicon-germanium substrate to about 20atomic percent at an upper surface of the silicon-germanium substrate.
18. The method recited in claim 10 further including conducting an anneal following the implantation of the dopant and the fluorine.