1461127205-c9202ee3-5b60-4d35-b1be-1cc0c033ae23

1. A method of fabricating a thin film transistor array substrate comprising:
forming gate patterns including a gate line and a gate electrode on a substrate;
forming a gate insulating layer on the substrate and the gate patterns;
forming sourcedrain patterns including a data line, a source electrode, a drain electrode and a storage electrode on the gate insulating;
depositing a passivation film on the gate insulating layer and the sourcedrain patterns;
forming a photo-resist pattern on the passivation film, and patterning the passivation film and the gate insulating layer using the photo-resist pattern as a mask to form a passivation film pattern and a gate insulating pattern so that a portion of the substrate is exposed;
depositing a transparent electrode material on the substrate and the photo-resist pattern; and
removing the photo-resist pattern and the transparent electrode material deposited on the photo-resist pattern to form a transparent pattern including a pixel electrode so that the transparent pattern is non-overlapped with the passivation film pattern,
wherein the removing the photo-resist pattern and the transparent electrode material including:
dipping the substrate having the photo-resist pattern and the transparent electrode material in a first stripper to remove the photo-resist pattern and the transparent electrode material;
removing a residual photo-resist pattern and a residual transparent electrode material left on the substrate by jetting air to the substrate by using an air knife after dipping the substrate in the first stripper; and
removing particles of the residual photo-resist pattern and the residual transparent electrode material left on the substrate by jetting a second stripper to the substrate by using a jet nozzle after removing the residual photo-resist pattern and the residual transparent electrode material.
2. The method according to claim 1, wherein the jetting a second stripper includes jetting the second stripper at the temperature of at least approximately 70\xb0 C.
3. The method according to claim 1, wherein the jetting a second stripper includes jetting the second stripper under a pressure of at least approximately 1 kgcm2.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A sheet treating apparatus for treating a sheet having an image formed thereon, comprising:
transporting means for transporting the sheet upward;
sheet post-treating portion for executing post-treatment such as stitching or punching of the sheet while holding the sheet in a substantially vertical state; and
a sheet delivery portion arranged above the sheet post-treating portion.
2-9. (canceled)