What is claimed is:
1. A semiconductor device comprising an n-channel MOS transistor and a p-channel MOS transistor each having a salicide structure, and a high-melting point metal silicide film missing part detection element detecting a missing part formed in a high-melting point metal silicide film provided on a gate electrode of said MOS transistors, wherein said high-melting point metal silicide filmmissing part detection element comprising a polysilicon film pattern with alternate connection between an n-type region having a prescribed impurity concentration and a p-type region having a prescribed impurity concentration, and a high-melting point metal silicide film formed on said polysilicon film pattern.
2. A semiconductor device according to claim 1, said impurity concentration of said p-type region is higher than that of said n-type region.
3. A semiconductor device according to claim 2, both ends of said polysilicon film pattern are made of said p-type region.
4. A semiconductor device according to claim 1, said impurity concentration of said n-type region is higher than that of said p-type region.
5. A semiconductor device according to claim 4, both ends of said polysilicon film pattern are made of said n-type region.
6. A semiconductor device according to claim 1, a sourcedrain region of said MOS transistor is formed by a LDD region and a sourcedrain diffusion layer having an impurity concentration higher than that of said LDD region, an impurity concentration of n-type region of said high-melting point metal silicide film missing part detection element is equal to that of said sourcedrain diffusion layer of said n-channel MOS transistor, and an impurity concentration of p-type region of said high-melting point metal silicide film missing part detection element is equal to that of said sourcedrain diffusion layer of said p-channel MOS transistor.
7. A semiconductor device according to claim 1, a sourcedrain region of said MOS transistor is formed by a LDD region and a sourcedrain diffusion layer having an impurity concentration higher than that of said LDD region, an impurity concentration of n-type region of said high-melting point metal silicide film missing part detection element is equal to that of said LDD region of said n-channel MOS transistor.
8. A semiconductor device according to claim 1, a sourcedrain region of said MOS transistor is formed by a LDD region and a sourcedrain diffusion layer having an impurity concentration higher than that of said LDD region, an impurity concentration of p-type region of said high-melting point metal silicide film missing part detection element is equal to that of said LDD region of said p-channel MOS transistor.
9. A semiconductor device according to claim 1, minimum line width of said polysilicon film pattern of said high-melting point metal silicide film missing part detection element is equal to a gate length of a gate electrode of said MOS transistor.
10. A semiconductor device according to claim 1, said high-melting point metal is either one of titanium or cobalt.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A process for modifying a substrate having one or more functional groups selected from hydroxyl groups and primary and secondary amino groups, the process comprising contacting at least one substrate, which is selected from the group consisting of a biomolecule, a polymer and a surface, with a compound of formula I or II under conditions such that the functional groups react, with opening of the 1,3-dioxolane ring or 1,3-diazaheptane ring and formation of a covalent bond, with the compound of formula I or II
in which
X is CO\u2014NH\u2014R1 and;
R is C1-C12-alkylene; and
k is an integer from 1 to 10,000, inclusive; and
R1 is ammonio-C1-C30-alkyl.
2. The process of claim 1, wherein the substrate is a polymer.
3. The process of claim 1, wherein k is 1.
4. The process of claim 1, wherein the compound of the formula I or II is contacted with a first substrate under conditions such that a covalent bond forms between a first end of the compound of the formula I or II and the first substrate, then the reaction product is contacted with a second substrate under conditions such that a covalent bond forms between a second end of the compound of the formula I or II and the second substrate.
5. The process of claim 4, wherein at least one of the first or second substrate is selected from the group consisting of biomolecules, polymers and surfaces.
6. The process of claim 5, wherein at least one polymer is selected from the group consisting of polyalkyleneamines, polyvinylamine, polyallylamine, polyethylenimine, chitosan, polyamideepichlorohydrin resins, polyaminostyrene, peptides and proteins.
7. A modified polymer obtained by the process of claim 2.
8. A finish, dispersant, emulsifier, adhesion promoter, adhesive or contact adhesive for modifying surfaces or for immobilizing active substances comprising the polymer of claim 7.
9. A process for modifying a substrate having one or more functional groups selected from hydroxyl groups and primary and secondary amino groups, the process comprising contacting at least one substrate with a compound of fonnula I under conditions such that the functional groups react, with opening of the 1,3-dioxolane ring and formation of a covalent bond, with the compound of formula I
wherein the compound of formula I is selected from the group consisting of
4-phenyloxyearbonyloxymethyl-2-oxo-1,3-dioxolane,
4-(4-phenyloxycarbonyloxy) butyl-2-oxo-1,3-dioxolane, and
4-(vinylsulfonylethoxy)butyl-2-oxo-1,3-dioxolane.
10. A modified polymer obtained by the process of claim 9.
11. A finish, dispersant, emulsifier, adhesion promoter, adhesive or contact adhesive for modifying surfaces or for immobilizing active substances comprising the polymer of claim 10.