1. A system for responding to requests using stream processing, the system comprising:
a computer readable storage medium having computer readable program code embodied therewith; and
a processor coupled to the computer readable storage medium, wherein responsive to executing the computer readable program code, the processor is configured to perform executable operations comprising:
responsive to a client request, assigning a processing thread for handling the client request;
establishing a return connection within the processing thread;
sending a server request derived from the client request to a stream server configured to interact with a plurality of stream processing nodes, wherein the server request comprises a thread identifier specifying the processing thread;
maintaining the processing thread for handling the client request in an idle state pending a write response message from the stream server;
responsive to receiving the write response message comprising a stream processing result and the thread identifier from the stream server, returning the processing thread specified by the thread identifier to an active state; and
sending a client response comprising the stream processing result to the client over the return connection.
2. The system of claim 1, wherein the processor is further configured to perform an executable operation comprising:
including at least a portion of the client request within the server request.
3. The system of claim 2, wherein the processor is further configured to perform an executable operation comprising:
selecting the processing thread to be returned to an active state from a plurality of idle processing threads according to the thread identifier.
4. A computer program product, comprising:
a computer readable storage medium having stored therein computer readable program code for responding to requests using stream processing,
the computer readable program code, which when executed by a computer hardware system, causes the computer hardware system to perform:
assigning, responsive to a client request, a processing thread for handling the client request;
establishing a return connection within the processing thread;
sending a server request derived from the client request to a stream server configured to interact with a plurality of stream processing nodes, wherein the server request includes a thread identifier specifying the processing thread;
maintaining the processing thread for handling the client request in an idle state pending a write response message from the stream server;
returning, responsive to receiving the write response message including a stream processing result and the thread identifier from the stream server, the processing thread specified by the thread identifier to an active state; and
sending, to the client over the return connection, a client response including the stream processing result.
5. The system of claim 4, wherein the computer readable program code further causes the computer hardware system to perform:
including at least a portion of the client request within the server request.
6. The system of claim 5, wherein the computer readable program code further causes the computer hardware system to perform:
selecting the processing thread to be returned to an active state from a plurality of idle processing threads according to the thread identifier.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for forming gate dielectric layers on a substrate, comprising:
forming a silicon oxide layer on a substrate;
plasma treating the silicon oxide layer;
depositing a silicon nitride layer on the silicon oxide layer by an ALD process; and
thermal annealing the substrate.
2. The method of claim 1, wherein the step of plasma treating the silicon oxide layer further comprises:
flowing an inert gas into a plasma treatment chamber; and
forming a plasma by the inert gas.
3. The method of claim 2, wherein the step of flowing the inert gas further comprises:
flowing the inert gas between about 50 sccm and about 750 sccm into the plasma treatment chamber.
4. The method of claim 2, wherein the step of forming a plasma further comprises:
applying a RF power between about 500 Watts and about 3000 Watts.
5. The method of claim 2, wherein the inert gas is selected from a group consisting of Ar, He, Ne, Xe, and the combination thereof.
6. The method of claim 2, wherein the inert gas is a nitrogen containing gas.
7. The method of claim 6, wherein the treated silicon oxide layer treated by the nitrogen containing gas has a nitrogen concentration between about 0.2 E15 atomscm2 to about 1 E15 atomscm2.
8. The method of claim 1, further comprising:
precleaning the substrate prior to forming the silicon oxide layer.
9. The method of claim 1, wherein the step of forming the silicon oxide layer, further comprises:
forming the silicon oxide layer with a thickness less than 15 \u212b.
10. The method of claim 1, wherein depositing the silicon nitride layer further comprises:
depositing the silicon nitride with a thickness less than 15 \u212b.
11. The method of claim 1, wherein the step of depositing the silicon nitride layer further comprises:
alternatively flowing a silicon containing gas and a nitrogen containing gas into an ALD chamber.
12. The method of claim 11, wherein the step of flowing further comprises:
flowing the silicon containing gas into the ALD chamber between about 5 sccm and about 500 sccm; and
flowing the nitrogen containing gas into the ALD chamber between about 1000 sccm and about 5000 sccm.
13. The method of claim 11, wherein the nitrogen containing gas is at least one of NH3, N2, N2H4 or N2O.
14. The method of claim 11, wherein the silicon containing gas is at least one of SiH4, Si2H6, dichlorosilane (DCS), tetrachlorosilane (TCS) or hexachlorodisilane (HCD).
15. The method of claim 1, wherein the silicon oxide layer and the silicon nitride layer form a gate dielectric layer.
16. The method of claim 1, wherein the step of plasma treating the silicon oxide layer further comprises:
creating nucleation sites on the treated silicon oxide layer.
17. A method for forming gate dielectric layers on a substrate, comprising:
precleaning a substrate;
forming a silicon oxide layer on the substrate;
plasma treating the silicon oxide layer;
depositing a silicon nitride layer on the silicon oxide layer by an ALD process; and
thermal annealing the substrate, wherein the formed silicon oxide layer and the silicon nitride layer form a gate dielectric layer.
18. The method of claim 17, wherein the plasma treating the silicon oxide layer further comprises:
creating nucleation sites on the treated silicon oxide layer.
19. The method of claim 17, wherein the formed silicon oxide layer and the silicon nitride layer has a total thickness less than 30 \u212b.
20. A method for forming a gate structure, comprising:
precleaning a substrate;
forming a silicon oxide layer on the substrate;
plasma treating the silicon oxide layer;
depositing a silicon nitride layer on the silicon oxide layer by an ALD process;
thermal annealing the substrate, wherein the formed silicon oxide layer and the silicon nitride layer has a total thickness less than 30 \u212b and forms a gate dielectric;
forming a gate electrode on the gate dielectric; and
forming source and drain regions in the substrate proximate the gate electrode.