1. A kite slider comprising:
a base frame and a flying device engaging with the base frame,
the base frame having a hollow casing, a winding rod inserted through the hollow casing, and a connection rod connected to the winding rod and extending outward from the hollow casing,
an end ring disposed on the connection rod,
a retainer device connected to the hollow casing and a distal end of the winding rod,
a distal ring disposed on the winding rod,
the hollow casing having a retaining notch,
the flying device having a main frame, a pair of leaf blades connected to the main frame, a click frame connected to the leaf blades, and a hooking device disposed on the main frame, and
the click frame engaging with the retaining notch of the hollow casing.
2. The kite slider as claimed in claim 1, wherein a movable latch is disposed in the hollow casing to be inserted through the retaining notch.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of measuring relative positions of a first alignment mark and a second alignment mark located on a substrate and oriented in a first direction that is substantially parallel to a surface of the substrate, the first alignment mark includes a periodic structure that is oriented substantially in the first direction having a first portion with a first periodicity and an adjacent second portion with a second periodicity, the second alignment mark including a periodic structure that is oriented substantially in the first direction having a first portion with the second periodicity and an adjacent second portion with the first periodicity, the first and second alignment marks being arranged such that the first portion of the first alignment mark and the first portion of the second alignment mark are substantially located one over the other, and the second portion of the first alignment mark and the second portion of the second alignment mark are substantially located one over the other, the method comprising:
directing an alignment beam to the first and second alignment marks;
measuring a Moir\xe9 pattern generated by interference between respective first portions of the first and second alignment marks, and interference between respective second portions of the first and second alignment marks; and
determining the relative positions of the first and second alignment marks based on the measured Moir\xe9 pattern.
2. The method according to claim 1, wherein the first and second portions of the first alignment mark and the second alignment mark have a length of substantially PE22, where PEb is given by:
1PEb=1PE1\u22121PE2, where PE1 is the first periodicity and PE2 is the second periodicity.
3. The method according to claim 1, wherein the first alignment mark and the second alignment mark are provided in different layers on the substrate.
4. The method according to claim 1, wherein the second alignment mark is a latent alignment mark.
5. The method according to claim 1, wherein the second alignment mark is a developed alignment mark.
6. The method according to claim 1, wherein measuring the Moir\xe9 pattern comprises determining a periodicity of the Moir\xe9 pattern by making a spatial map showing an intensity of the Moir\xe9 pattern.
7. The method according to claim 6, wherein measuring the Moir\xe9 pattern comprises determining the intensity of the Moir\xe9 pattern at least at one position along an intensity curve.
8. The method according to claim 7, wherein the at least one position is adjacent to the second alignment mark and corresponds to a phase transition from the first portion to the second portion of the second alignment mark located within a layer on the substrate.
9. The method according to claim 7, wherein the at least one position is adjacent to the second alignment mark and corresponds to a phase transition with an offset of PEb4.
10. The method according to claim 1, wherein measuring the Moir\xe9 pattern comprises determining a periodicity of the Moir\xe9 pattern by measuring an intensity of at least one diffraction line of a diffraction pattern generated from the first alignment mark and the second alignment mark.
11. The method according to claim 10, wherein said at least one diffraction line corresponds to the periodicity of the Moir\xe9 pattern (PEb).
12. The method according to claim 10, wherein at least one diffraction line corresponds to half the periodicity of the Moir\xe9 pattern (PE22).
13. The method according to claim 1, wherein the first periodicity and the second periodicity are each formed by a block function, comprising alternating first portions and second portions, and each of the first and second portions ends at one end of the block function oriented in the first direction with a length of one or three quarters of the corresponding first periodicity and second periodicity.
14. A substrate having two nr more layers, comprising:
a first alignment mark positioned on a first layer of the substrate having a first periodic structure that is oriented substantially in a first direction, the first periodic structure including a first portion with a first periodicity and an adjacent second portion with a second periodicity;
a second alignment mark positioned on a second layer of the substrate that is adjacent to the first layer, the second alignment mark having a second periodic structure that is oriented substantially in the first direction, the second periodic structure including a first portion with the second periodicity and an adjacent second portion with the first periodicity; and
the first and second alignment marks being arranged such that the first portion of the first alignment mark and the first portion of the second alignment mark are substantially located one over the other, and the second portion of the first alignment mark and the second portion of the second alignment mark are substantially located one over the other, such that respective first portions of the first and second alignment marks provide Moir\xe9 interference patterns, and respective second portions of first and second alignment marks provide Moir\xe9 interference patterns.
15. An alignment apparatus for determining relative positions of a first alignment mark and a second alignment mark that are oriented in a first direction substantially along the surface of a substrate, the alignment apparatus including a substrate holder for holding the substrate, wherein the first alignment mark is positioned on a first layer of the substrate having a first periodic structure that is oriented substantially in the first direction, the first periodic structure including a first portion with a first periodicity and an adjacent second portion with a second periodicity, the second alignment mark positioned on a second layer of the substrate that is adjacent to the first layer, the second alignment mark having a second periodic structure that is oriented substantially in the first direction, the second periodic structure including a first portion with the second periodicity and an adjacent second portion with the first periodicity, the first and second alignment marks being arranged such that the first portion of the first alignment mark and the first portion of the second alignment mark are substantially located one over the other, and the second portion of the first alignment mark and the second portion of the second alignment mark are substantially located one over the other, the apparatus comprises:
a beam generator constructed and arranged to direct an alignment beam to the first and second alignment marks;
a light detector constructed and arranged to detect a Moir\xe9 pattern generated by interference between respective first portions of the first and second alignment marks, and interference between respective second portions of the first and second alignment marks;
a first unit constructed and arranged to determine the periodicity of the Moir\xe9 pattern; and
a second unit constructed and arranged to determine the relative positions of the first and the second alignment marks based on the determined periodicity of the Moir\xe9 pattern.
16. A lithographic projection apparatus comprising:
a radiation system constructed and arranged to provide a projection beam of radiation;
a support structure constructed and arranged to support a patterning means, the patterning means serving to pattern the projection beam according to a desired pattern;
a substrate table constructed and arranged to hold a substrate; and
a projection system constructed and arranged to project the patterned beam onto a target portion of the substrate, the substrate including a first alignment mark positioned on a first layer of the substrate having a first periodic structure that is oriented substantially in a first direction, the first periodic structure including a first portion with a first periodicity and an adjacent second portion with a second periodicity, a second alignment mark positioned on a second layer of the substrate that is adjacent to the first layer, the second alignment mark having a second periodic structure that is oriented substantially in the first direction, the second periodic structure including a first portion with the second periodicity and an adjacent second portion with the first periodicity, and
the first and second alignment marks being arranged such that the first portion of the first alignment mark and the first portion of the second alignment mark are substantially located one over the other, and the second portion of the first alignment mark and the second portion of the second alignment mark are substantially located one over the other, such that respective first portions of the first and second alignment marks provide Moir\xe9 interference patterns, and respective second portions of first and second alignment marks provide Moir\xe9 interference patterns.
17. The lithographic projection apparatus according to claim 16, further comprising an error determination unit that determines a first relative position between the first alignment mark and the second alignment mark to provide an indication of whether an alignment error is present between the first alignment mark and the second alignment mark.