1. A spectroscopic gas sensor for detecting at least one gas component in ambient air, comprising:
at least one radiation detection device configured to detect a radiation spectrum that is characteristic for the at least one gas component;
a package for receiving the at least one radiation detection device, the package having at least one package wall end section; and
at least one optical component having at least one connecting section that is connectable to the at least one package wall end section by hot caulking the at least one package wall end section,
wherein the at least one optical component includes a reflector and a screen, wherein both the reflector and the screen are connectable to the at least one package wall end section using a joint hot caulking process with the aid of a form punch.
2. The gas sensor as recited in claim 1, wherein the package is configured as a premolded package using an injection-molding process.
3. The gas sensor as recited in claim 1, wherein the reflector is used for at least one of deflecting and concentrating, the radiation.
4. The gas sensor as recited in claim 3, wherein the reflector is made of a plastic coated with a reflective material.
5. The gas sensor as recited in claim 3, wherein the reflector has at least one reflecting surface.
6. The gas sensor as recited in claim 5, wherein a shape of the reflecting surface is one of parabolic or elliptical.
7. The gas sensor as recited in claim 1, wherein the screen is an optical screen.
8. The gas sensor as recited in claim 7, wherein the optical screen is made of steel.
9. The gas sensor as recited in claim 1, wherein the gas sensor is mounted on an assigned p.c. board using a pick-and-place assembly method.
10. The gas sensor as recited in claim 1, wherein the gas sensor is designed as one of a two-channel carbon dioxide gas sensor or nitrogen oxide gas sensor.
11. A spectroscopic gas sensor for detecting at least one gas component in ambient air, comprising:
at least one radiation detection device configured to detect a radiation spectrum that is characteristic for the at least one gas component;
a package for receiving the at least one radiation detection device, the package having at least one package wall end section; and
at least one optical component having at least one connecting section that is connectable to the at least one package wall end section by hot caulking the at least one package wall end section,
wherein the at least one optical component includes a reflector and a screen, each of the reflector and the screen having a connecting section, wherein the connecting sections of the screen and the reflector are each provided in a form-fitting manner on a circumferential contact section of the package.
12. A spectroscopic gas sensor for detecting at least one gas component in ambient air, comprising:
at least one radiation detection device configured to detect a radiation spectrum that is characteristic for the at least one gas component;
a package for receiving the at least one radiation detection device, the package having at least one package wall end section; and
at least one optical component having at least one connecting section that is connectable to the at least one package wall end section by hot caulking the at least one package wall end section,
wherein the at least one package wall end section of the package surrounds the connecting section of the at least one optical component and has a deformation section that projects over the connecting section,
wherein the deformation section is deformable in the direction of the connecting section by a form punch during the hot caulking process to clamp the connecting section of the at least one optical component.
13. A spectroscopic gas sensor for detecting at least one gas component in ambient air, comprising:
at least one radiation detection device configured to detect a radiation spectrum that is characteristic for the at least one gas component;
a package for receiving the at least one radiation detection device, the package having at least one package wall end section; and
at least one optical component having at least one connecting section that is connectable to the at least one package wall end section by hot caulking the at least one package wall end section,
wherein the at least one package wall end section of the package surrounds the connecting section of the at least one optical component and has a deformation section that projects over the connecting section,
wherein a predetermined force for bending the deformation section is applicable to the form punch during the hot caulking process without damaging the at least one optical component.
14. A method for manufacturing a spectroscopic gas sensor, the gas sensor for detecting at least one gas component in ambient air, the method comprising:
forming a package for receiving at least one detection device for detecting a radiation spectrum that is characteristic for the at least one gas component, the package having at least one deformation section;
inserting at least one optical component having at least one connecting section into the package so that the at least one deformation section of the package projects over the at least one connecting section; and
deforming the at least one deformation section of the package in a direction of the at least one connecting section of the at least one optical component for clamping the at least one optical component in place in the package using a hot caulking process.
15. The method as recited in claim 14, wherein the package is manufactured as a premolded package, using an injection-molding method.
16. The method as recited in claim 14, wherein a form punch having a deformation contact surface is used for the hot caulking process.
17. The method as recited in claim 14, wherein the gas sensor is mounted on an assigned p.c. board, using a pick-and-place assembly method.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A semiconductor device, comprising:
a word line and a bit line on a substrate, the word line intersecting the bit line;
an insulating layer on the substrate, the insulating layer including voids therein; and
a passivation layer on the insulating layer, the passivation layer including hydrogen atoms therein,
the voids defining diffusion pathways through which the hydrogen atoms in the passivation layer diffuse in a direction toward the substrate.
2. The semiconductor device as claimed in claim 1, wherein the word line includes a metal gate, the metal gate including a metal material or including a conductive metal nitride material.
3. The semiconductor device as claimed in claim 2, wherein the metal gate is buried in the substrate.
4. The semiconductor device as claimed in claim 2, wherein the substrate includes a trench therein and the metal gate is buried within the trench.
5. The semiconductor device as claimed in claim 2, wherein the metal gate includes at least one of a titanium nitride layer, a stacked titanium nitride layer and tungsten layer, a tungsten nitride layer, a tantalum nitride layer, and a tungsten layer.
6. The semiconductor device as claimed in claim 1, further comprising a first interlayer dielectric layer, a second interlayer dielectric layer, and a metal interconnection, wherein:
the first interlayer dielectric layer covers the word line and the bit line,
the second interlayer dielectric layer is on the first interlayer dielectric layer,
the metal interconnection is between the first interlayer dielectric layer and the second interlayer dielectric layer, and
at least one of the first interlayer dielectric layer and the second interlayer dielectric layer corresponds to the insulating layer having the voids therein.
7. The semiconductor device as claimed in claim 6, wherein:
the first and second interlayer dielectric layers correspond to the insulating layer having the voids therein, and
a size of the voids in the first interlayer dielectric layer is equal to a size of the voids in the second interlayer dielectric layer.
8. The semiconductor device as claimed in claim 6, wherein:
the first and second interlayer dielectric layers correspond to the insulating layer having the voids therein, and
a size of the voids in the first interlayer dielectric layer is different from a size of the voids in the second interlayer dielectric layer.
9. The semiconductor device as claimed in claim 1, wherein the passivation layer includes a silicon oxide layer containing the hydrogen atoms or includes a silicon nitride layer containing the hydrogen atoms.
10.-20. (canceled)