1. Polybenzazole fibers or filaments having a tensile strength retention of 85% or higher after exposed to an atmosphere of a temperature of 80\xb0 C. and a relative humidity of 80% for 700 hours.
2. Polybenzazole fibers or filaments according to claim 1, characterized in that the fibers or filaments have a strength retention of 50% or higher when exposed to light from a xenon lamp for 100 hours.
3. Polybenzazole fibers or filaments according to claim 1, characterized in that the fibers or filaments contain in themselves an organic pigment having heat resistance as high as a thermal decomposition temperature of 200\xb0 C. or higher, and soluble in a mineral acid.
4. Polybenzazole fibers or filaments according to claim 1, characterized in that the organic pigment contained in the fibers or filaments has group(s) of \u2014N\u2550 andor NH\u2014 in the molecule.
5. Polybenzazole fibers or filaments according to claim 1, characterized in that the organic pigment contained in the fibers or filaments is any of perinones andor perylenes.
6. Polybenzazole fibers or filaments according to claim 1, characterized in that the organic pigment contained in the fibers or filaments is any of phthalocyanines.
7. Polybenzazole fibers or filaments according to claim 1, characterized in that the organic pigment contained in the fibers or filaments is any of quinacridones.
8. Polybenzazole fibers or filaments according to claim 1, characterized in that the organic pigment contained in the fibers or filaments is any of dioxazines.
9. Polybenzazole staple fibers having a tensile strength retention of 85% or higher after exposed to an atmosphere of a temperature of 80\xb0 C. and a relative humidity of 80% for 700 hours.
10. A spun yarn comprising polybenzazole fibers or filaments as at least one component, the spun yarn having a tensile strength retention of 70% or higher after exposed to an atmosphere of a temperature of 80\xb0 C. and a relative humidity of 80% for 700 hours.
11. A cord for reinforcing rubber, comprising twisted yarns of polybenzazole fibers or filaments, the cord having a tensile strength retention of 70% or higher after exposed to an atmosphere of a temperature of 80\xb0 C. and a relative humidity of 80% for 700 hours.
12. A polybenzazole fiber sheet for reinforcing cementconcrete, having a tensile strength retention of 75% or higher after exposed to an atmosphere of a temperature of 80\xb0 C. and a relative humidity of 80% for 700 hours.
13. A polybenzazole fiber rod for reinforcing cementconcrete, having a tensile strength retention of 75% or higher after exposed to an atmosphere of a temperature of 80\xb0 C. and a relative humidity of 80% for 700 hours.
14. A composite material comprising polybenzazole fibers or filaments as at least one component, the composite material having a tensile strength retention of 75% or higher after exposed to an atmosphere of a temperature of 80\xb0 C. and a relative humidity of 80% for 700 hours.
15. A sail cloth excellent in durability, comprising polybenzazole fibers or filaments, the sail cloth having a tensile strength retention of 80% or higher in the fiber axial direction, after exposed to an atmosphere of a temperature of 80\xb0 C. and a relative humidity of 80% for 700 hours.
16. A high strength fiber rope comprising polybenzazole fibers or filaments, the fiber rope having a tensile strength retention of 85% or higher after exposed to an atmosphere of a temperature of 80\xb0 C. and a relative humidity of 80% for 700 hours.
17. A knife proof vest comprising polybenzazole fibers or filaments at least one component, the knife proof vest having a tensile strength retention of 75% or higher after exposed to an atmosphere of a temperature of 80\xb0 C. and a relative humidity of 80% for 700 hours.
18. A bullet proof vest comprising polybenzazole fibers or filaments at least one component, the bullet proof vest having a tensile strength retention of 75% or higher after exposed to an atmosphere of a temperature of 80\xb0 C. and a relative humidity of 80% for 700 hours.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of forming a semiconductor device, the method comprising:
providing a complimentary metal oxide semiconductor (CMOS) device including:
a silicon substrate layer;
a silicon dioxide layer thereover; and
an n-type field effect transistor (NFET) gate having a first recessed sourcedrain trench and a p-type field effect transistor (PFET) gate having a second recessed sourcedrain trench, the NFET gate and the PFET gate located over the silicon dioxide layer;
depositing a nitride stress liner in the first recessed sourcedrain trench and the second recessed sourcedrain trench;
depositing an oxide layer over the nitride stress liner;
placing the CMOS device on a handling wafer, wherein the oxide layer is closest to the handling wafer;
removing the silicon substrate layer;
etching the silicon dioxide layer to form an opening abutting a portion of a sourcedrain region, the sourcedrain region abutting one of the first recessed sourcedrain trench or the second recessed sourcedrain trench; and
forming a contact in the opening.
2. The method according to claim 1, wherein the forming of the contact includes depositing a silicide in the opening.
3. The method of claim 2, wherein the forming of the contact further includes depositing a contact metal over the silicide.
4. The method according to claim 1, wherein the etching of the silicon dioxide layer is performed by reactive ion etching.
5. The method of claim 1, further comprising planarizing the oxide layer.
6. The method of claim 1, wherein the CMOS device further includes a first spacer abutting the NFET gate and a second spacer abutting the PFET gate, and further comprising:
removing the first spacer to form the first sourcedrain trench and removing the second spacer to form the second sourcedrain trench.
7. The method of claim 1, further comprising: depositing a metal liner over the nitride stress liner before the depositing of the oxide layer.