1. A system-in-package (SiP) comprising:
a substrate obtained by cutting a wafer for each unit system;
one or more first electronic devices mounted on the substrate by a heat radiation plate;
a plurality of interlayer dielectrics sequentially formed on the substrate; and
one or more second electronic devices buried between or in the interlayer dielectrics on the substrate.
2. The SiP according to claim 1, wherein a heat sink is attached beneath the substrate.
3. The SiP according to claim 2, wherein heat pipes for connecting the heat radiation plate on the substrate and the heat sink to each other are formed to pass through the substrate.
4. The SiP according to claim 1, wherein the first electronic device comprises a device operated in high speed and generating high heat, such as CPU, MCU, AP or BBP.
5. The SiP according to claim 1, further comprising a passive device buried between or in the interlayer dielectrics.
6. The SiP according to claim 5, wherein the passive device comprises an integrated passive device or a thin film type passive device.
7. The SiP according to claim 1, further comprising a redistribution conductive layer electrically connected to at least one of the first and second electronic devices.
8. The SiP according to claim 1, further comprising solder bumps electrically connected to the first and second electronic devices on the substrate.
9. The SiP according to claim 8, wherein a vertical conductive layer passing through the interlayer dielectrics is formed to electrically connect the first or second electronic device and the solder bump to each other.
10. The SiP according to claim 8, wherein a lower metal layer having one or more layers is formed beneath the solder bump.
11. The SiP according to claim 1, wherein the first electronic device is connected to the heat radiation plate by a die attach film.
12. The SiP according to claim 1, wherein the first or second electronic device is mounted to have a top surface facing up or down.
13. The SiP according to claim 1, wherein the substrate is made of a Si, Al2O3, glass or metal material.
14. An SiP comprising:
a substrate obtained by cutting a wafer for each unit system;
one or more first electronic devices mounted on the substrate by a heat radiation plate;
a plurality of interlayer dielectrics sequentially formed on the substrate;
one or more second electronic devices buried between or in the interlayer dielectrics on the substrate; and
a thermal conduction path connecting the second electronic device to the heat radiation plate.
15. The SiP according to claim 14, wherein the thermal conduction path is configured to connect the second electronic device to the heat radiation plate by filling a thermal conductive material in a hole vertically passing through the interlayer dielectrics.
16. A method of fabricating an SiP, comprising:
forming a heat pipe by making a hole in a thickness direction of a wafer level substrate therein and filling a thermal conductive material in the hole;
positioning a heat radiation plate on a top surface of the substrate;
mounting a first electronic device on the heat radiation plate;
forming a plurality of interlayer dielectrics on the substrate;
burying a second electronic device between or in the interlayer dielectrics;
exposing the heat pipe by grinding a bottom surface of the substrate;
forming a solder bump on the substrate; and
attaching a heat sink to the bottom surface of the substrate.
17. The method according to claim 16, further comprising burying a passive device between or in the interlayer dielectrics.
18. The method according to claim 16, further comprising forming a vertical conductive layer passing through the interlayer dielectrics to be electrically connected to the first or second electronic device.
19. The method according to claim 16, further comprising forming a redistribution conductive layer electrically connected to the first or second electronic device.
20. The method according to claim 16, further comprising cutting the substrate for each unit system.
21. The method according to claim 16, further comprising making a plurality of holes in the substrate and filling a conductive material in the holes.
22. The method according to claim 21, further comprising forming a thermal conductive path connecting a portion of the second electronic device to the heat radiation plate.
23. A method of fabricating an SiP, comprising:
positioning a heat radiation plate on a wafer level substrate;
mounting a first electronic device on the heat radiation plate;
forming a plurality of interlayer dielectrics on the substrate;
burying a second electronic device between or in the interlayer dielectrics;
forming a solder bump on the substrate;
removing the substrate; and
attaching a heat sink to the bottom surface of the heat radiation plate.
24. The method according to claim 23, wherein the substrate has a complex structure in which a flexible film is formed on a hard substrate.
25. The method according to claim 24, wherein the flexible film is a thin film having a release property or a release agent coated in liquid phase.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for processing a substrate in single substrate tool, the method comprising:
providing the substrate in the single substrate tool;
applying a first processing fluid at a first temperature greater than 100\xb0 C. to a lower surface of the substrate to heat the substrate to approximately the first temperature; and
applying a second processing fluid at a second temperature greater than 100\xb0 C. to an upper surface of the substrate.
2. The method of claim 1, wherein applying the first processing fluid is performed before applying the second processing fluid.
3. The method of claim 1, wherein applying the first processing fluid overlaps in time with applying the second processing fluid.
4. The method of claim 1, wherein applying the second processing fluid etches a film on the upper surface of the substrate.
5. The method of claim 1, wherein applying the second processing fluid etches a nitride film on the upper surface of the substrate.
6. The method of claim 1, wherein applying the second processing fluid etches a silicon nitride film on the upper surface of the substrate.
7. The method of claim 1, wherein the first processing fluid includes phosphoric acid, sulfuric acid, or a mixture thereof.
8. The method of claim 1, wherein the second processing fluid includes phosphoric acid, sulfuric acid, or a mixture thereof.
9. The method of claim 1, wherein the first and second processing fluids include the same chemical selected from the group consisting of phosphoric acid, sulfuric acid, and a mixture phosphoric acid and sulfuric acid.
10. The method of claim 1, wherein the first and second processing fluids include phosphoric acid.
11. The method of claim 1, wherein the first and second temperatures are greater than 130\xb0 C.
12. The method of claim 1, wherein the first and second temperatures are greater than 160\xb0 C.
13. The method of claim 1, wherein the first temperature is greater than the second temperature.
14. The method of claim 1, wherein the first processing fluid includes sulfuric acid and the second processing fluid includes phosphoric acid, and wherein the first temperature is greater than the second temperature.
15. A method for processing a substrate in single substrate tool, the method comprising:
providing the substrate in the single substrate tool;
applying a first processing fluid containing phosphoric acid at a first temperature greater than 100\xb0 C. to a lower surface of the substrate to heat the substrate to approximately the first temperature; and
applying a second processing fluid containing phosphoric acid at a second temperature greater than 100\xb0 C. to an upper surface of the substrate, wherein applying the second processing fluid etches a silicon nitride film on the upper surface of the substrate.
16. The method of claim 15, wherein applying the first processing fluid is performed before applying the second processing fluid.
17. The method of claim 15, wherein applying the first processing fluid overlaps in time with applying the second processing fluid.
18. The method of claim 15, wherein the first and second temperatures are greater than 130\xb0 C.
19. The method of claim 15, wherein the first and second temperatures are greater than 160\xb0 C.
20. A method for processing a substrate in single substrate tool, the method comprising:
providing the substrate in the single substrate tool;
applying a first processing fluid containing sulfuric acid at a first temperature greater than 100\xb0 C. to a lower surface of the substrate to heat the substrate to approximately the first temperature; and
applying a second processing fluid containing phosphoric acid at a second temperature greater than 100\xb0 C. to an upper surface of the substrate, wherein the first temperature is greater than the first temperature.