I claim:
1. A semiconductor memory having a memory cell array, the memory cell array comprising:
a silicon on insulator substrate having an insulation layer;
a first memory cell having a first storage capacitor and a first selection transistor formed as an n-channel transistor; and
a second memory cell having a second storage capacitor and a second selection transistor formed as a p-channel transistor;
said first memory cell and said second memory cell formed in said silicon on insulator substrate.
2. The semiconductor memory according to claim 1, wherein at least one of said first storage capacitor and said second storage capacitor is formed as a trench capacitor.
3. The semiconductor memory according to claim 1, wherein at least one of said first storage capacitor and said second storage capacitor is formed as a stacked capacitor.
4. The semiconductor memory according to claim 1, comprising:
a trench isolation formed in said substrate;
said trench isolation together with said insulation layer, insulating said first selection transistor from said second selection transistor.
5. The semiconductor memory according to claim 1, wherein said first selection transistor is formed as a vertical transistor.
6. The semiconductor memory according to claim 1, wherein said second selection transistor is formed as a vertical transistor.
7. The semiconductor memory according to claim 5, comprising:
a trench isolation formed in said substrate for insulating said first selection transistor from said second selection transistor; and
a conductive layer configured between said trench isolation and said insulation layer.
8. The semiconductor memory according to claim 1, wherein:
said second selection transistor has a threshold voltage; and
said first selection transistor includes a gate made of a mid-gap material chosen such that said first selection transistor has a threshold voltage that is a negative value of said threshold voltage of said second selection transistor.
9. The semiconductor memory according to claim 8, comprising germanium provided as a dopant material.
10. The semiconductor memory according to claim 1, wherein:
said first selection transistor includes a gate material;
said second selection transistor includes a gate material; and
at least one of said gate material said first selection transistor and said gate material of said second selection transistor includes polysilicon doped with a dopant.
11. The semiconductor memory according to claim 9, wherein said dopant is germanium.
12. The semiconductor memory according to claim 1, wherein said first selection transistor includes a gate material selected from the group consisting of titanium nitride, tungsten, and tantalum.
13. The semiconductor memory according to claim 1, wherein said second selection transistor includes a gate material selected from the group consisting of titanium nitride, tungsten, and tantalum.
14. The semiconductor memory according to claim 1, comprising:
a silicide;
said first selection transistor including a source doping region connected to said first storage capacitor by said silicide.
15. The semiconductor memory according to claim 1, comprising:
a silicide;
said second selection transistor including a source doping region connected to said second storage capacitor by said silicide.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A turbine blade for a gas turbine engine comprising:
an airfoil including leading and trailing edges joined by spaced apart pressure and suction sides to provide an exterior airfoil surface extending from a platform in a radial direction to a tip; and
wherein the external airfoil surface is formed in substantial conformance with multiple cross-sectional profiles of the airfoil described by a set of Cartesian coordinates set forth in Table 1, the Cartesian coordinates provided by an axial coordinate scaled by a local axial chord, a circumferential coordinate scaled by a local axial chord, and a span location, wherein the local axial chord corresponds to a width of the airfoil between the leading and trailing edges at the span location.
2. The turbine blade according to claim 1, wherein the airfoil is a second stage turbine blade.
3. The turbine blade according to claim 1, wherein the span location corresponds to a distance from a rotational axis of the airfoil.
4. The turbine blade according to claim 1, wherein the Cartesian coordinates in Table 1 have a tolerance relative to the specified coordinates of \xb10.050 inches (\xb11.27 mm).
5. A gas turbine engine comprising:
a compressor section;
a combustor fluidly connected to the compressor section;
a turbine section fluidly connected to the combustor, the turbine section comprising:
a high pressure turbine coupled to the high pressure compressor via a shaft;
a low pressure turbine; and
wherein the high pressure turbine includes an array of turbine blades, wherein at least one turbine blade includes an airfoil having leading and trailing edges joined by spaced apart pressure and suction sides to provide an exterior airfoil surface extending from a platform in a radial direction to a tip; and
wherein the external airfoil surface is formed in substantial conformance with multiple cross-sectional profiles of the airfoil described by a set of Cartesian coordinates set forth in Table 1, the Cartesian coordinates provided by an axial coordinate scaled by a local axial chord, a circumferential coordinate scaled by a local axial chord, and a span location, wherein the local axial chord corresponds to a width of the airfoil between the leading and trailing edges at the span location.
6. The gas turbine engine according to claim 5, wherein the array is a second stage array of turbine blades.
7. The gas turbine engine according to claim 6, wherein the high pressure turbine includes an array of fixed stator vanes upstream from the first stage array of turbine blades.
8. The gas turbine engine according to claim 6, wherein the second stage array of turbine blades includes forty-four turbine blades.
9. The gas turbine engine according to claim 5, wherein the span location corresponds to a distance from a rotational axis of the airfoil.
10. The gas turbine engine according to claim 5, wherein the Cartesian coordinates in Table 1 have a tolerance relative to the specified coordinates of \xb10.050 inches (\xb11.27 mm).
11. The gas turbine engine according to claim 5, wherein the high pressure turbine consists of two arrays of turbine blades and two arrays of fixed stator vanes.