1. A method of forming a porous film on a semiconductor substrate, comprising the steps of:
supplying a silicon compound containing at least one Si\u2014O bond in its molecule in a gaseous phase into a reaction chamber;
forming a siloxane oligomer through plasma reaction of the silicon compound; and
supplying an organic amine in a gaseous phase into the reaction chamber and reacting the organic amine with the siloxane oligomer, thereby forming a porous film on the semiconductor substrate.
2. The method according to claim 1, wherein the silicon compound has three or more Si\u2014O bonds.
3. The method according to claim 1, wherein the silicon compound is a cyclic siloxane compound expressed by Si(RR\u2032)\u2014O\u03b1 wherein R and R\u2032 are hydrocarbon groups, and \u03b1 is an integer of 3 to 5.
4. The method according to claim 1, wherein the silicon compound is expressed by SiR5(OR6)(OR7)(OR8) wherein R5 is a hydrocarbon group of C1-6, and R6, R7 and R8 are independently CnH2n+1 wherein n is an integer of 1 to 3.
5. The method according to claim 1, wherein the silicon compound is expressed by Si(OR9)(OR10)(OR11)(OR12) wherein R9, R10, R11 and R12 are independently CnH2n+1 wherein n is an integer of 1 to 5.
6. The method according to claim 1, wherein the silicon compound is tetraethoxysilane or tetramethoxysilane.
7. The method according to claim 1, wherein the step of forming the siloxane oligomer further comprises supplying into the reaction chamber H2O or a compound having an OH bond in a gaseous phase as an additive gas.
8. The method according to claim 1, wherein the organic amine is expressed by the general formula R13R14R15R16N+.OH\u2212, where R13, R14, R15 and R16 are CnH2n+1, n is an integer of 1 or greater.
9. The method according to claim 1, further comprising heating the semiconductor substrate after the film is formed thereon.
10. The method according to claim 1, wherein the reaction chamber is divided into upper and lower sections, and the silicon compound is supplied into the upper section whereas the organic amine is supplied into the lower section.
11. The method according to claim 10, wherein the silicon compound is supplied into the upper section through an upper shower plate to which RF power is applied, whereas the organic amine is supplied into the lower section through an intermediate shower plate.
12. The method according to claim 1, wherein the porous film has a dielectric constant of 2.7 or less.
13. The method according to claim 1, further comprising:
supplying an organic monomer in a gaseous phase into the reaction chamber and forming fine organic particles through plasma reaction of the organic monomer, thereby forming the porous film including the fine organic particles; and
removing the fine organic particles from the porous film formed on the substrate.
14. The method according to claim 13, wherein the removing of the fine organic particles is performed by heating.
15. The method according to claim 13, wherein the reaction chamber is divided into upper and lower sections, and the organic monomer is supplied into the upper section whereas the silicon compound and the organic amine are supplied into the lower section.
16. The method according to claim 15, wherein the organic monomer is supplied into the upper section through an upper shower plate to which RF power is applied, whereas the silicon compound and the organic amine are supplied into the lower section through an intermediate shower plate while RF power is applied to a susceptor on which the substrate is placed.
17. The method according to claim 13, wherein the porous film has a dielectric constant of 2.5 or less.
18. A method of forming a porous film on a semiconductor substrate, comprising the steps of:
vaporizing an organic monomer and supplying the vapor into the reaction chamber;
forming fine organic particles through plasma reaction of the organic monomer;
vaporizing a silicon compound having at least one Si\u2014O bond and supplying the vapor into the reaction chamber;
forming a siloxane oligomer through plasma reaction of the vaporized silicon compound in the reaction chamber;
supplying an organic amine into the reaction chamber and reacting the organic amine with the siloxane oligomer, thereby forming a thin film including the fine organic particles on the substrate; and
removing the fine organic particles from the thin film to form a porous film on the semiconductor substrate.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A process for producing titanium dioxide pigment, which comprises a step of coating a hydrolysis product of an alkylsilane compound represented by the following formula (1):
(where R is an alkyl group having 5 or less carbon atoms, R\u2032 is a hydrolyzable group, and n is an integer of 1 to 3, m is an integer of 0 to 2, and n+m\u22663) by dry processing on surfaces of particles of titanium dioxide pigment
whererin the particles of the titanium dioxide pigment is obtained by pulverization of titanium dioxide pigment in a fluid energy pulverizer; and
wherein the fluid energy pulverizer uses a gas as a pulverizing medium and the hydrolysis product of the alkysilane compound represented by the formula (1) is added to the pulverizer during the pulverization of the titanium dioxide pigment.
2. A process for producing titanium dioxide pigment according to claim 1, wherein R\u2032 is a methoxy group or an ethoxy group.
3. A process for producing titanium dioxide pigment according to claim 1, wherein the fluid energy pulverizer uses steam as a pulverizing medium, and the alkylsilane compound represented by the formula (1) is added to the pulverizer during the pulverization of the titanium dioxide pigment.
4. A process for producing titanium dioxide pigment according to claim 1, wherein the dry processing is carried out at 120\xb0 to 300\xb0 C.
5. A process for producing titanium dioxide pigment according to claim 1, wherein the hydrolysis product of the alkylsilane compound is subjected to dry processing in an amount ranging from 0.01 to 3.0 wt. % in terms of the alkylsilane compound on the basis of the titanium dioxide pigment.
6. A process for producing titanium dioxide pigment according to claim 1, wherein the titanium dioxide pigment is coated with an inorganic compound in advance.
7. A process for producing titanium dioxide pigment according to claim 6, wherein the inorganic compound is hydrated oxide of aluminum.
8. A process for producing titanium dioxide pigment according to claim 7, wherein the hydrated oxide of aluminum is coated in an amount ranging from 0.01 to 1.0 wt. % in terms of Al2O3 on the basis of the titanium dioxide pigment.
9. A process for producing titanium dioxide pigment, according to claim 1, wherein the titanium dioxide pigment has a dispersibility of not more than 20 kgcm2.
10. A process for producing a resin composition, which comprises mixing the titanium dioxide pigment obtained by the process according to claim 1, with a molten plastic resin with a kneader.
11. A process for producing titanium dioxide pigment according to claim 3, wherein the dry processing is carried out at 120\xb0 to 300\xb0 C.