1. A method comprising:
forming an NMOS transistor on a substrate, wherein the substrate further comprises a PMOS transistor disposed thereon, wherein the NMOS transistor comprises first channel, a first gate structure disposed on the first channel, and first sidewall spacers adjacent the first gate structure;
forming a first trench in the first gate structure;
forming a first high-k gate dielectric in the first trench;
forming an n-type work function material on the first high-k gate dielectric disposed in the first trench; and
forming a first metal gate electrode over the n-type work function material.
2. The method of claim 1, further comprising wherein a stressor is formed over the first gate structure, wherein the stressor comprises a tensile layer over the first gate structure.
3. The method of claim 1, wherein forming the first trench comprises removing portion of the first gate structure by removing a first gate electrode and a first gate dielectric, and wherein removing a portion of the first gate structure increases a tensile strain on the first channel.
4. The method of claim 1, further comprising: wherein the first metal gate electrode provides an additional tensile strain in the first channel.
5. The method of claim 4, wherein the first channel is stressed via the first high-k gate dielectric.
6. The method of claim 4, wherein the first channel is stressed via the first sidewall spacers.
7. The method of claim 4, wherein the first metal gate electrode includes at least one of tungsten or titanium carbide.
8. The method of claim 4, further comprising:
wherein the PMOS transistor comprises a second gate structure disposed on a second channel, a second stressor disposed on the second gate structure, and second sidewall spacers adjacent the second gate structure;
forming a second trench in the second gate structure;
forming a second high-k gate dielectric in the second trench; and
forming a second metal gate electrode over the second high-k gate dielectric.
9. The method of claim 8, wherein the second metal gate electrode comprises a material having a coefficient of thermal expansion that is greater than the coefficient of thermal expansion of the second channel, and wherein the second metal gate electrode provides an additional compressive strain in the second channel.
10. The method of claim 3, further comprising:
forming a silicon dioxide gate dielectric in the first trench; and
forming a polysilicon gate electrode over the silicon dioxide gate dielectric.
11. A method comprising:
forming a substrate;
forming a PMOS transistor on the substrate, wherein the PMOS transistor comprises a first gate structure disposed on a first channel and first stressor, wherein the first stressor comprises an epitaxial source and drain film, and first sidewall spacers disposed adjacent the first gate structure;
forming an NMOS transistor on the substrate, wherein the NMOS transistor comprises a second gate structure disposed on a second channel, a second stressor disposed on the second gate and second sidewall spacers adjacent the second gate structure;
forming a first trench in the first gate structure of the PMOS transistor;
forming a second trench in the second gate structure of the NMOS transitor;
forming a high-k gate dielectric in the first trench and the second trench;
forming an n-type work function material on the high-k gate dielectric disposed in the first trench and the second trench; and
forming a second metal gate in the second trench.
12. The method of claim 11, wherein forming the first trench comprises removing a portion of the first gate structure by removing a gate electrode and a gate dielectric, wherein the stressor increases the compressive strain on the first channel.
13. The method of claim 12, further comprising:
forming a first metal gate electrode over the n-type work function material in the first trench, wherein the first metal gate electrode provides an additional compressive strain in the first channel.
14. The method of claim 11, further comprising forming a fill material on the n-type work function material that is disposed in the first trench and in the second trench.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for treating methicillin resistant Staphylococcus aureus (MRSA) bacterial infection in a mammal, said method comprising administering an effective amount of a compound of Formula (I) to said mammal:
a pharmaceutically acceptable acid or base addition salt thereof, or a stereochemically isomeric form thereof wherein:
R1 is hydrogen, halo, haloalkyl, cyano, hydroxy, Ar, Het, alkyl, alkyloxy, alkylthio, alkyloxyalkyl, alkylthioalkyl, Ar-alkyl or di(Ar)alkyl;
p is an integer equal to 1, 2 or 3;
s is an integer equal to zero, 1, 2, 3 or 4;
R2 is hydrogen; halo; alkyl; hydroxy; mercapto; alkyloxy optionally substituted with amino or mono or di(alkyl)amino or a radical of formula
\u2003wherein Z is CH2, CH\u2014R8, O, S, N\u2014R8 and t is an integer equal to 1 or 2 and the dotted line represents an optional bond; alkyloxyalkyloxy; alkylthio; mono or di(alkyl)amino wherein alkyl may optionally be substituted with one or two substituents each independently be selected from alkyloxy or Ar or Het or morpholinyl or 2-oxopyrrolidinyl; Ar; Het or a radical of formula
\u2003wherein Z is CH2, CH\u2014R8, O, S, N\u2014R8; t is an integer equal to 1 or 2; and the dotted line represents an optional bond;
R3 is alkyl, Ar, Ar-alkyl, Het or Het-alkyl;
q is an integer equal to zero, 1, 2, 3 or 4;
R4 and R5 each independently are hydrogen, alkyl or benzyl; or
R4 and R5 together and including the N to which they are attached may form a radical selected from the group of pyrrolidinyl, 2-pyrrolinyl, 3-pyrrolinyl, pyrrolyl, imidazolidinyl, pyrazolidinyl, 2-imidazolinyl, 2-pyrazolinyl, imidazolyl, pyrazolyl, triazolyl, piperidinyl, pyridinyl, piperazinyl, pyridazinyl, pyrimidinyl, pyrazinyl, triazinyl, morpholinyl and thiomorpholinyl, each of said rings optionally being substituted with alkyl, halo, haloalkyl, hydroxy, alkyloxy, amino, mono- or dialkylamino, alkylthio, alkyloxyalkyl, alkylthioalkyl and pyrimidinyl;
R6 is hydrogen, halo, haloalkyl, hydroxy, Ar, alkyl, alkyloxy, alkylthio, alkyloxyalkyl, alkylthioalkyl, Ar-alkyl or di(Ar)alkyl; or
two vicinal R6 radicals may be taken together to form together with the phenyl ring to which they are attached a naphthyl;
r is an integer equal to 1, 2, 3, 4 or 5; and
R7 is hydrogen, alkyl, Ar or Het;
R8 is hydrogen, alkyl, hydroxyl, aminocarbonyl, mono- or di(alkyl)aminocarbonyl, Ar, Het, alkyl substituted with one or two Het, alkyl substituted with one or two Ar, Het-C(\u2550O)\u2014 or Ar\u2014C(\u2550O)\u2014;
alkyl is a straight or branched saturated hydrocarbon radical having from 1 to 6 carbon atoms; or is a cyclic saturated hydrocarbon radical having from 3 to 6 carbon atoms; or is a cyclic saturated hydrocarbon radical having from 3 to 6 carbon atoms attached to a straight or branched saturated hydrocarbon radical having from 1 to 6 carbon atoms; wherein each carbon atom can be optionally substituted with hydroxy, alkyloxy or oxo;
Ar is a homocycle selected from the group of phenyl, naphthyl, acenaphthyl, tetrahydronaphthyl, each optionally substituted with 1, 2 or 3 substituents, each substituent independently selected from the group of hydroxy, halo, cyano, nitro, amino, mono- or dialkylamino, alkyl, haloalkyl, alkyloxy, haloalkyloxy, carboxyl, alkyloxycarbonyl, alkylcarbonyl, aminocarbonyl, morpholinyl and mono- or dialkylaminocarbonyl;
Het is a monocyclic heterocycle selected from the group of N-phenoxypiperidinyl, piperidinyl, pyrrolyl, pyrazolyl, imidazolyl, furanyl, thienyl, oxazolyl, isoxazolyl, thiazolyl, isothiazolyl, triazolyl, pyridinyl, pyrimidinyl, pyrazinyl and pyridazinyl; or a bicyclic heterocycle selected from the group of quinolinyl, isoquinolinyl, 1,2,3,4-tetrahydroisoquinolinyl, quinoxalinyl, indolyl, indazolyl, benzimidazolyl, benzoxazolyl, benzisoxazolyl, benzothiazolyl, benzisothiazolyl, benzofuranyl, benzothienyl, 2,3-dihydrobenzo1,4dioxinyl or benzo1,3dioxolyl; each monocyclic and bicyclic heterocycle may optionally be substituted on a carbon atom with 1, 2 or 3 substituents, each substituent independently selected from the group of halo, hydroxy, alkyl or alkyloxy;
halo is a substituent selected from the group of fluoro, chloro, bromo and iodo and
haloalkyl is a straight or branched saturated hydrocarbon radical having from 1 to 6 carbon atoms or a cyclic saturated hydrocarbon radical having from 3 to 6 carbon atoms or a cyclic saturated hydrocarbon radical having from 3 to 6 carbon atoms attached to a straight or branched saturated hydrocarbon radical having from 1 to 6 carbon atoms; wherein one or more carbon atoms are substituted with one or more halo atoms;
provided that radical
\u2003is bonded to one of positions 2, 6 or 7 of the quinoline moiety.
2. The method according to claim 1 wherein R1 is hydrogen or halo.
3. The method according to claim 1 wherein p is equal to 1.
4. The method according to claim 1 wherein R2 is hydrogen or halo.
5. The method according to claim 1 wherein R3 is optionally substituted naphthyl or optionally substituted phenyl.
6. The method according to claim 1 wherein q is equal to 1 or 3.
7. The method according to claim 1 wherein R4 and R5 each independently are C1-6alkyl.
8. The method according to claim 1 wherein R6 is hydrogen.
9. The method according to claim 1 wherein R7 is hydrogen or alkyl.
10. The method according to claim 1 wherein s is an integer equal to 0 or 1.
11. The method according to claim 1 wherein the bacterial infection is an infection with a gram-positive bacterium.