1. A method of forming a semiconductor structure comprising:
covering a plurality of transistor gates with a first capping layer;
covering a plurality of sourcedrain contact areas with a second capping layer;
forming a first mask over the semiconductor structure, wherein the first mask exposes a plurality of gate contact locations;
removing the first capping layer from the plurality of gate contact locations;
forming a second mask over the semiconductor structure, wherein the second mask exposes a plurality of sourcedrain contact locations;
removing the second capping layer from the plurality of sourcedrain contact locations; and
depositing a metallization layer over the exposed sourcedrain contact locations and exposed gate contact locations.
2. The method of claim 1, wherein covering a plurality of transistor gates with a first capping layer comprises depositing silicon nitride.
3. The method of claim 2, wherein covering a plurality of sourcedrain contact areas with a second capping layer comprises depositing silicon oxide.
4. The method of claim 1, wherein depositing a metallization layer comprises depositing tungsten.
5. The method of claim 1, wherein depositing a metallization layer comprises depositing copper.
6. The method of claim 1, further comprising forming a gate-SD stitch structure connecting one of the plurality of transistor gates to an adjacent sourcedrain contact area.
7. The method of claim 1, further comprising connecting a first transistor gate of the plurality of transistor gates to a second transistor gate of the plurality of transistor gates.
8. The method of claim 1, further comprising connecting a first sourcedrain contact area of the plurality of sourcedrain contact areas to a second sourcedrain contact area of the plurality of sourcedrain contact areas.
9. A method of forming a semiconductor structure comprising:
covering a plurality of transistor gates with a first capping layer;
covering a plurality of sourcedrain contact areas with a second capping layer;
forming a first mask over the semiconductor structure, wherein the first mask exposes a plurality of gate contact locations;
removing the first capping layer from the plurality of gate contact locations;
forming a second mask over the semiconductor structure, wherein the second mask exposes a plurality of sourcedrain contact locations;
removing the second capping layer from the plurality of sourcedrain contact locations; and
depositing a metallization line over the exposed sourcedrain contact locations and exposed gate contact locations, wherein the first capping layer comprises silicon oxide and the second capping layer comprises silicon nitride.
10. The method of claim 9, wherein depositing a metallization line comprises depositing tungsten.
11. The method of claim 9, further comprising forming a gate-SD stitch structure connecting one of the plurality of transistor gates to an adjacent sourcedrain contact area.
12. The method of claim 9, further comprising connecting a first transistor gate of the plurality of transistor gates to a second transistor gate of the plurality of transistor gates.
13. The method of claim 9, further comprising connecting a first sourcedrain contact area of the plurality of sourcedrain contact areas to a second sourcedrain contact area of the plurality of sourcedrain contact areas.
14. The method of claim 9, further comprising connecting a first sourcedrain contact layer region comprising NMOS transistors to a second sourcedrain contact layer region comprising PMOS transistors using a passthrough interconnection.
15. A semiconductor structure comprising: a plurality of transistor gates; a plurality of transistor sourcedrain contact areas; a first capping layer disposed on a subset of the plurality of transistor gates; a second capping layer disposed on a subset of the plurality of transistor sourcedrain contact areas; and a metallization layer disposed on the first capping layer and second capping layer and a dielectric region comprised of silicon oxycarbide, and a plurality of spacers comprised of a material selected from the group consisting of silicon oxycarbide and silicon oxycarbonitride.
16. The semiconductor structure of claim 15, wherein the metallization layer is in electrical contact with at least one transistor gate of the plurality of transistor gates.
17. The semiconductor structure of claim 15, wherein the metallization layer is in electrical contact with at least one sourcedrain contact area of the plurality of transistor sourcedrain contact areas.
18. The semiconductor structure of claim 15, wherein the dielectric region bounds the metallization layer.
19. The semiconductor structure of claim 18, wherein the plurality of spacers are adjacent to each transistor gate of the plurality of transistor gates.
20. The semiconductor structure of claim 19, wherein the first capping layer is comprised of silicon nitride, and the second capping layer is comprised of silicon oxide.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A slider impedance mechanism for preventing ejection of a disk cartridge during operation of a disk drive, the mechanism comprising:
an impedance bend-up;
a rotation spring; and
an actuator follower bend-up;
wherein, when the disk drive is viewed from a top plan view and the front of the disk drive is situated on the bottom of the view:
the mechanism rotates about a pivot point such that the rotation spring imparts a clockwise bias to the mechanism;
the actuator follower bend-up interacts with and follows an actuator as it rotates readwrite heads on and off the disk; and
the impedance bend-up interacts with a sliding lever to prevent untimely ejection of the disk cartridge.
2. The impedance mechanism of claim 1, wherein the actuator is a rotary actuator and the mechanism is situated underneath a pinion, with which the sliding lever works to receive and eject the disk cartridge.
3. The impedance mechanism of claim 1, wherein:
when the actuator is in a parked position of not reading from or writing to the disk, the mechanism is in its counter-clockwise-most position; and
when the actuator is in an operating position of reading from or writing to the disk, the mechanism is in its clockwise-most position.
4. The impedance mechanism of claim 3, wherein:
when the actuator is in its parked position, the disk cartridge may be ejected from the disk drive; and
when the actuator is in its operating position, the disk cartridge may not be ejected from the disk drive.
5. The mechanism of claim 4, wherein the sliding lever has a post that extends down into a race situated in the pinion and wherein:
when the actuator is in its parked position, the impedance bend-up is clear of the race and the post is free to move through the race to permit the sliding lever to eject the disk cartridge; and
when the actuator is in its operating position, the impedance bend-up is blocking the race so that the post is not free to move through the race and the sliding lever is thereby not permitted to eject the disk cartridge from the disk drive.
6. A disk drive for recording digital information on or reading digital information from a flexible magnetic disk, which is disposed within a disk cartridge, said disk drive preventing ejection of the cartridge from the disk drive during a reading or writing operation of the disk drive, said disk drive comprising:
readwrite heads for recording digital information on or reading digital information from the disk;
an actuator for positioning readwrite heads over surfaces of the disk;
a sliding lever for receiving and ejecting the disk cartridge from the disk drive; and
a slider impedance lever comprising:
an impedance projection;
a rotation spring; and
an actuator follower projection;
wherein, when the disk drive is viewed from a top plan view and the front of the disk drive is situated on the bottom of the view:
said impedance lever rotates about a pivot point such that said rotation spring imparts a clockwise bias to said impedance lever;
said actuator follower projection interacts with and follows said actuator as it rotates said readwrite heads on and off the disk; and
said impedance projection interacts with said sliding lever to prevent untimely ejection of the disk cartridge.
7. The impedance lever of claim 6, wherein said drive includes a pinion and wherein said actuator is a rotary actuator and said impedance lever is underneath said pinion, with which said sliding lever works to receive and eject the disk cartridge.
8. The impedance lever of claim 6, wherein:
when said actuator is in a parked position of not reading from or writing to the disk, said impedance lever is in its counter-clockwise-most position; and
when the actuator is in an operating position of reading from or writing to the disk, said impedance lever is in its clockwise-most position.
9. The impedance lever of claim 6, wherein:
when said actuator is in its parked position, the disk cartridge may be ejected from the disk drive; and
when said actuator is in its operating position, said disk cartridge may not be ejected from the disk drive.