1. A method of forming a material comprising tungsten and nitrogen, comprising:
providing a substrate;
depositing a layer comprising tungsten and nitrogen over the substrate; and
in a separate step from the depositing, exposing the layer comprising tungsten and nitrogen to a nitrogen-containing plasma.
2. The method of claim 1 wherein the substrate comprises a dielectric material having a K greater than or equal to 10.
3. The method of claim 2 wherein the dielectric material comprises at least one of Ta2O5 and BST.
4. The method of claim 1 wherein the substrate comprises silicon.
5. The method of claim 1 wherein the substrate comprises silicon dioxide.
6. The method of claim 1 wherein the substrate comprises polysilicon.
7. The method of claim 1 wherein the substrate comprises a metal.
8. The method of claim 1 wherein the substrate comprises copper.
9. The method of claim 1 wherein the depositing comprises plasma-enhanced CVD utilizing WF6 and a nitrogen precursor.
10. The method of claim 9 wherein the nitrogen precursor comprises N2.
11. The method of claim 1 wherein the depositing comprises plasma-enhanced CVD utilizing WF6 and a nitrogen precursor, and wherein the exposing comprises ceasing the flow of WF6.
12. The method of claim 1 wherein the nitrogen-containing plasma is formed from a nitrogen-containing compound that does not comprise oxygen.
13. The method of claim 1 wherein the nitrogen-containing plasma is formed from at least one of N2 and NH3.
14. The method of claim 1 wherein the tungsten and nitrogen are in the form of WNx, wherein x is from 0.05 to 0.5.
15. The method of claim 1 wherein the layer comprising tungsten and nitrogen is a first layer, and further comprising forming a second layer comprising tungsten and nitrogen over said first layer.
16. A method of forming a mass comprising tungsten nitride, comprising:
providing a substrate;
depositing a first layer comprising tungsten nitride over the substrate;
ceasing the depositing of the first layer and exposing the first layer to a first nitrogen-containing plasma;
after exposing the first layer to the first nitrogen-containing plasma, depositing a second layer comprising tungsten nitride;
ceasing the depositing of the second layer; and
exposing the second layer to a second nitrogen-containing plasma.
17. The method of claim 16 wherein the first layer comprises a first thickness of from about 30 to about 2000, and wherein the second layer comprises a second thickness of from about 30 to about 2000.
18. The method of claim 16 wherein the first layer comprises a first thickness of from about 50 to about 500, and wherein the second layer comprises a second thickness of from about 50 to about 500.
19. The method of claim 16 wherein the depositing the first layer comprises the same conditions as the depositing the second layer.
20. The method of claim 16 wherein the exposing the first layer comprises the same conditions as the exposing the second layer.
21. The method of claim 16 wherein the substrate comprises a dielectric material having a K greater than or equal to 10.
22. The method of claim 21 wherein the dielectric material comprises at least one of Ta2O5 and BST.
23. The method of claim 21 wherein the substrate comprises silicon.
24. The method of claim 21 wherein the substrate comprises silicon dioxide.
25. The method of claim 21 wherein the substrate comprises polysilicon.
26. The method of claim 21 wherein the substrate comprises a metal.
27. The method of claim 21 wherein the substrate comprises copper.
28. The method of claim 21 wherein the first and second depositings comprise plasma-enhanced CVD utilizing WF6 and a nitrogen precursor.
29. The method of claim 28 wherein the nitrogen precursor comprises N2.
30. The method of claim 16 wherein the first and second depositings comprise plasma-enhanced CVD utilizing WF6 and a nitrogen precursor, and wherein the first and second exposings comprise ceasing the flow of WF6.
31. The method of claim 16 wherein the first and second nitrogen-containing plasmas are formed from a nitrogen-containing compound that does not comprise oxygen.
32. The method of claim 16 wherein the first and second nitrogen-containing plasmas are formed from at least one of N2 and NH3.
33. A method of forming a capacitor, comprising:
forming a first electrical node;
forming a dielectric layer over the first electrical node;
forming a second electrical node separated from the first electrical node by the dielectric layer; and
at least one of the first and second electrical nodes comprising tungsten and nitrogen, the forming said at least one of the nodes comprising;
depositing a layer comprising tungsten and nitrogen; and
in a separate step from the depositing, exposing the layer comprising tungsten and nitrogen to a nitrogen-containing plasma.
34. The method of claim 33 wherein the depositing comprises plasma-enhanced CVD utilizing WF6 and a nitrogen precursor, and wherein the exposing comprises ceasing the flow of WF6.
35. The method of claim 33 wherein the nitrogen-containing plasma is formed from a nitrogen-containing compound that does not comprise oxygen.
36. The method of claim 33 wherein the nitrogen-containing plasma is formed from at least one of N2 and NH3.
37. A method of forming a capacitor, comprising:
forming a first electrical node;
forming a dielectric layer over the first electrical node;
forming a second electrical node separated from the first electrical node by the dielectric layer; and
providing a material comprising tungsten and nitrogen between the dielectric layer and at least one of the electrical nodes, the providing comprising;
depositing a layer comprising tungsten and nitrogen; and
in a separate step from the depositing, exposing the layer comprising tungsten and nitrogen to a nitrogen-containing plasma.
38. The method of claim 37 wherein the material comprising tungsten and nitrogen is formed between the dielectric layer and only one of the electrical nodes.
39. The method of claim 37 wherein the material comprising tungsten and nitrogen is formed between the dielectric layer and both of the electrical nodes.
40. The method of claim 37 wherein the dielectric layer comprises a dielectric material having a K greater than or equal to 10.
41. The method of claim 40 wherein the dielectric material comprises at least one of Ta2O5 and BST.
42. The method of claim 37 wherein the depositing comprises plasma-enhanced CVD utilizing WF6 and a nitrogen precursor.
43. The method of claim 42 wherein the nitrogen precursor comprises N2.
44. The method of claim 37 wherein the depositing comprises plasma-enhanced CVD utilizing WF6 and a nitrogen precursor, and wherein the exposing comprises ceasing the flow of WF6.
45. The method of claim 37 wherein the nitrogen-containing plasma is formed from a nitrogen-containing compound that does not comprise oxygen.
46. The method of claim 37 wherein the nitrogen-containing plasma is formed from at least one of N2 and NH3.
47. The method of claim 37 wherein the tungsten and nitrogen are in the form of WNx, wherein x is from 0.05 to 0.5.
48. The method of claim 37 wherein the layer comprising tungsten and nitrogen is a first layer, and further comprising forming a second layer comprising tungsten and nitrogen over said first layer.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A computer-implemented method comprising:
receiving, by a computer, an input for placing a first receiver in a pairing mode, wherein the first receiver is configured to pair with a first peripheral device when the first receiver and first peripheral device are both in a pairing mode of operation, and wherein the first receiver is communicatively coupled to the computer;
placing the first receiver in a pairing mode;
receiving an input from the first peripheral device indicating that the first peripheral device is in the pairing mode;
pairing the first receiver with the first peripheral device;
detecting, by the computer, a second receiver communicatively coupled to the computer, the second receiver being paired with a second peripheral device;
in response to receiving instructions to pair the second peripheral device with the first receiver:
placing the first receiver in the pairing mode;
receiving an input from the second peripheral device indicating that the second peripheral device is in the pairing mode; and
pairing the first receiver with the second peripheral device; and
in response to receiving instructions to not pair the second peripheral device with the first receiver:
maintaining the pairing of the first peripheral device to the first receiver; and
maintaining the pairing of the second peripheral device to the second receiver.
2. The computer-implemented method of claim 1 wherein the first and second receiver is coupled to the computer via a universal serial bus (USB) device.
3. The computer-implemented method of claim 1 wherein each receiver is configured to pair with up to six peripheral devices.
4. The computer-implemented method of claim 1 wherein pairing includes establishing a bidirectional wireless communication link between a receiver and a peripheral device.
5. The computer-implemented method of claim 1 wherein the wireless communication link is a radio frequency (RF) link, Bluetooth link, or infrared (IR) link.
6. The computer-implemented method of claim 1 wherein receiving an indication that the first or second peripheral device is in the pairing mode includes an indication that the first or second peripheral device has been powered off and powered back on.
7. The computer-implemented method of claim 1 wherein the peripheral devices are human interface devices (HIDs) selected from the group consisting of a keyboard, mouse, keyboard mouse, or keypad.
8. A computer-implemented system, comprising:
one or more processors:
one or more non-transitory computer-readable storage mediums containing instructions configured to cause the one or more processors to perform operations including:
receiving an input for placing a first receiver in a pairing mode, wherein the first receiver is configured to pair with a first peripheral device when the first receiver and first peripheral device are both in a pairing mode of operation, and wherein the first receiver is communicatively coupled to the one or more processors;
placing the first receiver in a pairing mode;
receiving an input from the first peripheral device indicating that the first peripheral device is in the pairing mode;
pairing the first receiver with the first peripheral device;
detecting a second receiver communicatively coupled to the one or more processors, the second receiver being paired with a second peripheral device;
in response to receiving instructions to pair the second peripheral device with the first receiver:
placing the first receiver in the pairing mode;
receiving an input from the second peripheral device indicating that the second peripheral device is in the pairing mode; and
pairing the first receiver with the second peripheral device; and
in response to receiving instructions to not pair the second peripheral device with the first receiver:
maintaining the pairing of the first peripheral device to the first receiver; and
maintaining the pairing of the second peripheral device to the second receiver.
9. The system of claim 8 wherein the first and second receiver is coupled to the computer via a universal serial bus (USB) device.
10. The system of claim 8 wherein each receiver is configured to pair with up to six peripheral devices.
11. The system of claim 8 wherein pairing includes establishing a bidirectional wireless communication link between a receiver and a peripheral device.
12. The system of claim 8 wherein the wireless communication link is a radio frequency (RF) link, Bluetooth link, or infra-red (IR) link.
13. The system of claim 8 wherein receiving an indication that the first or second peripheral device is in the pairing mode includes an indication that the first or second peripheral device has been powered off and powered back on.
14. The system of claim 8 wherein the peripheral devices are human interface devices (HIDs) selected from the group consisting of a keyboard, mouse, keyboard mouse, or keypad.
15. A method comprising:
receiving, by a computer, an input for placing a first receiver in a pairing mode, wherein the first receiver is configured to pair with a first peripheral device when the first receiver and first peripheral device are both in a pairing mode of operation, and wherein the first receiver is communicatively coupled to the computer;
placing the first receiver in a pairing mode;
receiving an input from the first peripheral device indicating that the first peripheral device is in the pairing mode;
pairing the first receiver with the first peripheral device;
detecting, by the computer, a second receiver communicatively coupled to the computer, the second receiver being paired with a second peripheral device;
in response to receiving instructions to pair the second peripheral device with the first receiver:
placing the first receiver in the pairing mode;
receiving an input from the second peripheral device indicating that the second peripheral device is in the pairing mode; and
pairing the first receiver with the second peripheral device.
16. The method of claim 15 further comprising:
in response to receiving instructions to not pair the second peripheral device with the first receiver:
maintaining the pairing of the first peripheral device to the first receiver; and
maintaining the pairing of the second peripheral device to the second receiver.
17. The method of claim 15 wherein the first and second receiver is coupled to the computer via a universal serial bus (USB) device.
18. The method of claim 15 wherein each receiver is configured to pair with up to six peripheral devices.
19. The method of claim 15 wherein pairing includes establishing a bidirectional wireless communication link between a receiver and a peripheral device.
20. The method of claim 15 wherein the wireless communication link is a radio frequency (RF) link, Bluetooth link, or infra-red (IR) link.